Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2178 N-Channel Enhancement type OUTLINE DIMENSIONS F2E50VX2 Case : E-pack (Unit : mm) 500V 2A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

2SK2178

Abstract: F2E50VX2
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2178 F2E50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : E-pack (Unit : mm) 500V 2A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

Contextual Info: RATINGS {=1 « EIAJ No. 2SK2177 2SK2178 2SK2179 2SK2180 2SK2181 2SK2182 2SK2183 2SK2184 2SK2185 2SK2186 2SK2187 2SK2188 2SK2189 2SK2190 2SK2191 2SK2192 2SK2193 2SK2194 2SK2195 2SK2196 2SK2197 2SK2198 Absolute Maximum Ratings Tch Vdss Vgss I d Pt DC Tc=25°C

power mosfet 220 v 1a

Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2178 F2E50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case Case : E-pack (Unit : mm) 500V 2A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.

2SK2178

Contextual Info: O U T L IN E D IM E N S IO N S 2SK2178 F2E 50V X 2 500V 2a Lead type is available. I S e e P. 12, 7-1 R A T IN G S Absolute Maximum R atings m Item s (Tc=25°C) . se Symbol S to ra g e T em perature T s tg •f' -V T ch ^i'Jn.iÉT Channel T em perature

V9220

Contextual Info: •• • VX-ÏÏ'>'J-X VX-I SERIES POWCT MOSFET O U T L IN E D IM E N S IO N S Case '• E - pack 2SK2178 F2E50VX2 6.6 t 0-2 2.55: 0.2 0 .5 *0 ’ 500v 2 a E IA J No. V Date code a; / / / ' •; 0.6 ± 0.2 24 0.5 1.1*0 2 ' [U n it •' mm] 4 -rtbn i t .

2SK2178

Abstract: F2E50VX2 2A 500V MOSFET
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2178 F2E50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case Case : E-pack E-pack (Unit : mm) 500V 2A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.

Contextual Info: Power MOSFETs VX-II series N-Channel, Enhancement type /X X V 1 E-pack SMD Surface Mount E-pack (Lead type) V dss . ry i 2SK2177 2SK2178 2SK2179 Id . Pt . Ï.M . . Ï W I . _ . l y . i . . _ 10 15 20 40 ±30 ±30

2SK2178

Contextual Info: V X - I v U - X / t 7 —MOSFET asiT.'t VX-1 SERIES POWER MOSFET • W f f c O U T L IN E D IM E N S IO N S 2SK2178 F 2 E 5 0 V X 2 500v 2a ,j _ Ky j -/ t 0 P l l , 7-1 £ Lead type is available. ■ < ti £ \ \ 0 ' S e e P. 11, 7-1 R A T IN G S A b s o lu te Maxim um R a tin g s

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

MOSFET IRF 630

Contextual Info: vx-b’J=X ll7-MOSFET vx-n SERIES POWER MOSFET n 9+jf$+jkH O U T L I N E D I M E N S I O N S Case : E-pack 1 i : iate 2 4 1 IIraln 3 : Source [Unit : mm] ‘I - 1; -‘J 1 -7 $, &I 11 2 3-, P12, 7-l Q f ‘g ( 7’: $ 1 1 Lead type is available. See P. 12, 7-l

2SK2188

Abstract: F10W90HVX2 2SK2669 2SK2196 F20w 2SK2177 FP7W90HVX2 2SK2182
Contextual Info: ¡Ê fc -S lïi ü « R A T IN G S Teh V d s s V g s s Id DC EIA J No. Type No. «SlWflHÌ T c = 25"C E lectrical C h aracteristics Absolute Maximum Ratings [•c] [V ] [V ] P t R d s ON (max) Tc=25°C V g s = 1 0 V Id Iti C iss (typ) ton toff (typ) (typ)

2SK1672

Abstract: 2SK1533 2sk2280 2SK228
Contextual Info: N & P CHANNEL POWER MOSFETS N AND P CHANNEL ENHANCEMENT MODE • UP TO 900V AT 1.0 AMP WITH 2KV DIELECTRIC STRENGTH • LOW INPUT CAPACITANCE, LOW RDS ON AND FAST SWITCHING TIMES N CHANNEL ENHANCEMENT MODE TC = 25˚C The latest comprehensive data to fully