Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SK1724 Search Results

    2SK1724 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1724 Sanyo Semiconductor N-Channel Silicon MOSFET Original PDF
    2SK1724 Unknown FET Data Book Scan PDF
    2SK1724 Sanyo Semiconductor PCP Type Transistors, XP5 / XP6 Type Transistors Scan PDF
    2SK1724 Sanyo Semiconductor Ultra High Speed Switching MOSFETS Scan PDF

    2SK1724 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK1724

    Abstract: IT 7831
    Text: Ordering number:EN3819 N-Channel Silicon MOSFET 2SK1724 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SK1724] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max


    Original
    PDF EN3819 2SK1724 2SK1724] 25max 2SK1724 IT 7831

    EN3819

    Abstract: 2062a 2SK1724
    Text: Ordering number:EN3819 N-Channel Silicon MOSFET 2SK1724 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SK1724] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max


    Original
    PDF EN3819 2SK1724 2SK1724] 25max EN3819 2062a 2SK1724

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original
    PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    Untitled

    Abstract: No abstract text available
    Text: 2SK1724 LD L o w D rive S eries 2062 V 0 ss —3 0 V N Channel Power M OSFET E.3BI9 F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atin g s at Ta = 25°C Drain to Source Voltage V d ss Gate to Source Voltage


    OCR Scan
    PDF 2SK1724 10//S, 250mm2X 31893TH A8-7831

    2SK1724

    Abstract: No abstract text available
    Text: Ordering number: EN3819 _ 2SK1724 No.3819 N-Channel MOS Silicon FET Very High-Speed Switching Applications F eatures • Low ON resistance. - Very high-speed switching. • Low-voltage drive. A bsolute Maximum Ratings atT a = 25°C Drain to Source Voltage


    OCR Scan
    PDF EN3819 2SK1724 10//s, 250mm2

    2SK1885

    Abstract: 2SK2437 2SK2438
    Text: 0 ID Series Lineup VDSS = 30V, N-channel Absolute maximum ratings atT a= 25°C Typelto. Package Voss V 2SK1847 (V) CP 2SK1467 2SK1724 VGSS ±15 •o (A) m 0.5 0.25* 2.0 1.0 PCP 2SK2437 i2 0 2SK1468 P d* VGS(off) min to max (V) 1.0 to 2.0 3.5 2.0 4.0 Electrical characteristics atTa = 25°C


    OCR Scan
    PDF 2SK1847 2SK1467 2SK1724 2SK2437 2SK1468 2SK1469 2SK2046 2SK2438 2SK2439 2SK2555 2SK1885

    2SK1723

    Abstract: 2SK1708 2SK1702 2SK1700 2SK1705 2SK1720 2SK1701 2SK1718 2SK1719 2SK1699
    Text: - 118 - « tt « ffl jS mm ft 'Æ f M ? V 1 K v m * * Vg s * I * * V 1* (A) « [x P d / P c h * ♦ ÍW) less (max) (A) Vg s (V) (Ta=25eC ) ft 35 Id s (min) (max) V d s (A) (A) (V) tit (V) ff) (max) V d s (V) (V) S w (inin) (S) Id (A) Id (A) Vd s (V) 2SK1698


    OCR Scan
    PDF 2SKX698 2SK1699 1699S 2SK1700 ZSK1701 2SK1702 2SK1703 1703S 50nstyp 2SK1724 2SK1723 2SK1708 2SK1705 2SK1720 2SK1701 2SK1718 2SK1719

    2SK2747

    Abstract: 2SK2748 2SJ403 2SK536 2SK1467 2SJ254 2SJ255 2SJ256 2SJ263 2SJ264
    Text: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta » 251C RDS(on)@ID ' VGS W Voss (V) ID (A) PD (W) Teh 0« V 6^*> RDS(on) max(Q) to |Yf»| VDS • M> (A) Vgs (V) VDS 00 to (A) 2SJ282


    OCR Scan
    PDF Ta-25t) 2SJ282 T0220 2SJ348 2SJ478V 2SJ254 T0220ML 2SJ255 2SK2747 2SK2748 2SJ403 2SK536 2SK1467 2SJ256 2SJ263 2SJ264

    J289

    Abstract: 3SK266 2SK1728 3sk251 DS-17 SANYO
    Text: SAftYO Small-signal MOSFETs Feat, u r e s ♦ Very low noise figure * Large IYf s I * Low gate leak current Sma11-sized package permitting FET-used sets to be made smaller Case Out 1inesiunit:mm SANYO:CP4 x Lr Amp, Low Noise, Analog Switch Impedance Conversion Applications


    OCR Scan
    PDF Sma11-sized 2SK1839< 2SK536 2SK1840UJ) 3SK248CNJ) 2SK669 2SK1841 2SK583 Characteristics/Ta-25X; 12/55m J289 3SK266 2SK1728 3sk251 DS-17 SANYO

    TO-32-070

    Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
    Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)


    OCR Scan
    PDF T0220ML TO-32-070 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124

    2SK22

    Abstract: SGF23
    Text: 2SK.2SJ Ty p e Lists for* Type No . 1nd ioat 1on on Di odes and Hal 1 E 1ements. type, 3SK,SVC,pin d i o d e S . B . D . G a A s SBD, FET SW D i o d e No. 2SK242 2SK283 2 SK 303 2SK436 2SK443 2 SK 53 6 2SK543 2SK545 2SK771 2 SK 84 8 2SK93 1 2SK932 2SK968 2SK10 65


    OCR Scan
    PDF 2SK242 2SK283 2SK436 2SK443 2SK543 2SK545 2SK771 2SK93 2SK932 2SK968 2SK22 SGF23

    2SK2437

    Abstract: CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking
    Text: Medium Output Power M0SFETs 2 LD S r~ i e s (L owD rive)VDS S :1 2V — 200V(F.C.P:F 1 a t SAfÈYO Channe 1 P i-o c e s s) SANYO has realized low-threshold voltage by optimum design of impurity concentration of Si or Si surface by adopting the F.C. P. process


    OCR Scan
    PDF MT980624TR 2SK2437 CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking

    Untitled

    Abstract: No abstract text available
    Text: Power MOSFETs Electrical characteristic» T. » 31 °Q AtooMe mKknum ratings . Owto» _ - Pwtogi Appflcaflons m _ ' _ Voss » _ Voss w t# w 2SJ284* CP Very high-speed switch 30 ±15 0.3 2SJ285* CP Very high-speed switch 60 ±15 0.25 2SJ286* CP Very high-speed switch


    OCR Scan
    PDF 2SJ284* 2SJ286* 2SK1847 2SJ285* 2SJ233 2SK1731 2SK1732 2SK1734 2SK1735 DD14SSD

    J289

    Abstract: K2171 2sj281 2SK1847 2SK1470 KD K1470 2sk669 K1311
    Text: Small-signal Features MOS FETs ♦ Very low noise_ figure * Large _ |Yfs| # Low gate leak current * Small-sized packageipermitting — ' i ♦ FET-used sets to be made, smaller Case Oct 1in.es /uni I.:a SANYO :C:'4 sjc LF Amp, Low Noise, Analog Switch Impedance Conversion Applications


    OCR Scan
    PDF 3SK265 3SK266 3SK248 12/55m 2/80m 45/-/50m 130m/65m 21/90m MT931224TR J289 K2171 2sj281 2SK1847 2SK1470 KD K1470 2sk669 K1311

    2SK2153

    Abstract: 2SJ332S
    Text: • Device Lineup ♦ 2.5V-Drive Power MOSFETs Absolute maximum ratings Ta = 25DC Type No, Package 2SJ381 PCP 2SJ382 TP-FA 2SJ383 2SJ419 2SK2317 2SK2318 FW201 ±10 2 ±12 r r rD (W) lytsi typ Ciss typ (S) (pF) 3.5 400/700 280/400 2.4 170 240/380 155/220 ^


    OCR Scan
    PDF 2SJ381 2SJ382 2SJ383 2SJ419 2SJ42Q 2SK2316 2SK2317 2SK2318 2SK2440 2SK2441 2SK2153 2SJ332S