2SK2442 Search Results

2SK2442 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SK2442		Sanyo Semiconductor	N-Channel Silicon MOS FET Very High-Speed Switching Applications		Original	PDF
2SK2442		Toshiba	Power MOSFETs Cross Reference Guide		Original	PDF
2SK2442		Sanyo Semiconductor	Ultra High Speed Switching Transistors		Scan	PDF

2SK2442 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SK2442 Abstract: No abstract text available Text: 2SK2442 N- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications •Low ON-state resistance. •high-speed switching. •4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage	Original	2SK2442 1000mm2 951214TM2fXHD 2SK2442	PDF
2sk3436 Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744 Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis	Original	TND023F FX504 CPH5504 MCH5805 FX505 HPA72R TND024F FX506 MCH3301 TND024MP 2sk3436 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744	PDF
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620	PDF
2sk3436 Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970 Text: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品保守品・廃止品に関するお知らせいつも半導体製品をご使用いただきまして誠にありがとうございます。このたび、下記三洋半導体製品を保守品または廃止品と致します。	Original	40610HKPC TC-00002289 CPH5815 MCH5815 MCH6629 MCH6649 CPH6610 CPH6614 SCH1411 SCH1436 2sk3436 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970	PDF
2SJ437 Abstract: 2SK244 Text: il ucakon Examples lUsing a Schotfky Barner diode AC a d a p te r Using a power MOSFET) ; •>- - ■►! — ■-* A C a d a p te r o u tp u t o - o u tp u t Battery Battery ■ Device Lineup ♦ Schottky Barrier Diodes Package SB20W03P PCP SB40W03T TP-FA	OCR Scan	SB20W03P SB40W03T SBA100-04ZP SBA160-Q4ZP SBA50-04Y SBA10Q-04Y SBA160-04Y characteristicsSJ466 2SJ437 2SJ257 2SK244	PDF
2SK1885 Abstract: 2SK2437 2SK2438 Text: 0 ID Series Lineup VDSS = 30V, N-channel Absolute maximum ratings atT a= 25°C Typelto. Package Voss V 2SK1847 (V) CP 2SK1467 2SK1724 VGSS ±15 •o (A) m 0.5 0.25* 2.0 1.0 PCP 2SK2437 i2 0 2SK1468 P d* VGS(off) min to max (V) 1.0 to 2.0 3.5 2.0 4.0 Electrical characteristics atTa = 25°C	OCR Scan	2SK1847 2SK1467 2SK1724 2SK2437 2SK1468 2SK1469 2SK2046 2SK2438 2SK2439 2SK2555 2SK1885	PDF
FW201 Abstract: 2SJ469 Text: il- i •'iti i -•» ■ Overview ^R H p r Currently, portable information equipment such as notebook computers, video cam eras and portable telephones are rapidly o e c e r ig more compact and lightweight. In particular, iarge-capacity, high-performance battery-pack supplies nave become essential. S A N Y O -;as	OCR Scan	2SK2557 FW103 FW201 FW202 FW203 40/58T 115/165T 1000mm2 2SJ419 2SJ468 2SJ469	PDF
2SK2437 Abstract: CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking Text: Medium Output Power M0SFETs 2 LD S r~ i e s (L owD rive)VDS S :1 2V — 200V(F.C.P:F 1 a t SAfÈYO Channe 1 P i-o c e s s) SANYO has realized low-threshold voltage by optimum design of impurity concentration of Si or Si surface by adopting the F.C. P. process	OCR Scan	MT980624TR 2SK2437 CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking	PDF
2SK1731 Abstract: 2SK2637 2SK1871 2SK2626 2sk2636 2SK2438 2SK2153 2sk2406 2SK1474 2SK1920 Text: Continued from previous page Absolute maximum ratings Applications M VGSS Id V (A) (W) VDSS Electrical characteristics (Ta • 25 C ) RDSCmO @ ID PD Teh (1C) VGSS (off) (V) ID ■V6S ves (V) & \|Yfs\| 0 VDS ' ID slif Type Mo. Package type (A) 2SK1474 TP Ultrahigh-speed switching	OCR Scan	2SK1474 2SK1475 2SK1920 2SK2046 2SK2153 2SK2619V 2SK2626V 2SK2634V 2SK2164 2SK2321 2SK1731 2SK2637 2SK1871 2SK2626 2sk2636 2SK2438 2sk2406	PDF
2SK2153 Abstract: 2SJ332S Text: • Device Lineup ♦ 2.5V-Drive Power MOSFETs Absolute maximum ratings Ta = 25DC Type No, Package 2SJ381 PCP 2SJ382 TP-FA 2SJ383 2SJ419 2SK2317 2SK2318 FW201 ±10 2 ±12 r r rD (W) lytsi typ Ciss typ (S) (pF) 3.5 400/700 280/400 2.4 170 240/380 155/220 ^	OCR Scan	2SJ381 2SJ382 2SJ383 2SJ419 2SJ42Q 2SK2316 2SK2317 2SK2318 2SK2440 2SK2441 2SK2153 2SJ332S	PDF