2SK10 Search Results

2SK10 Result Highlights (4)

Part	Manufacturer	Description
2SK1056-E	Renesas Electronics Corporation	N Channel MOSFET
2SK1058-E	Renesas Electronics Corporation	N Channel MOSFET, TO-3P, /Tube
2SK1057-E	Renesas Electronics Corporation	N Channel MOSFET
2SK1095-E	Renesas Electronics Corporation	Nch Single Power Mosfet 60V 25A Mohm To-220Fm

2SK10 Price and Stock

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Renesas Electronics Corporation 2SK1058-E MOSFET N-CH 160V 7A TO3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK1058-E	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Silica	2SK1058-E			28 Weeks	3,600	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	2SK1058-E		20			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics LLC 2SK1093-E N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK1093-E	Bulk			179	1 - 10 - 100 - 1000 $1.68 10000 $1.68	Buy Now
Rochester Electronics LLC 2SK1060-AZ N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK1060-AZ	Bulk			270	1 - 10 - 100 - 1000 $1.11 10000 $1.11	Buy Now
Renesas Electronics Corporation 2SK1070PIETL-E JFET N-CH 22V 50MA 3MPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK1070PIETL-E	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Verical	2SK1070PIETL-E		24,000		292	1 - 10 - 100 - 1000 $1.1688 10000 $1.1688	Buy Now
Rochester Electronics	2SK1070PIETL-E		24,000		1	1 $1.1 10 $1.1 100 $1.03 1000 $0.935 10000 $0.935	Buy Now
Renesas Electronics Corporation 2SK1070PIETR-E JFET N-CH 22V 50MA 3MPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK1070PIETR-E	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Verical	2SK1070PIETR-E		12,000		292	1 - 10 - 100 - 1000 $1.1688 10000 $1.1688	Buy Now
Rochester Electronics	2SK1070PIETR-E		12,000		1	1 $1.1 10 $1.1 100 $1.03 1000 $0.935 10000 $0.935	Buy Now

Find more 2SK10 price and stock on Findchips.com

2SK10 Datasheets (500)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK1000	NEC	Semiconductor Selection Guide 1995	Original	PDF
2SK1000	NEC	Small Signal FET(Junction type) AM tuner, HF amplification	Original	PDF
2SK1000	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF
2SK1000	Unknown	FET Data Book	Scan	PDF
2SK1000	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK1001	Unknown	FET Data Book	Scan	PDF
2SK1001	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK1002	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK1002	Unknown	FET Data Book	Scan	PDF
2SK1006	Collmer Semiconductor	MOSFET Transistors	Scan	PDF
2SK1006	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Scan	PDF
2SK1006	Unknown		Scan	PDF
2SK1006	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK1006	Unknown	FET Data Book	Scan	PDF

2SK1006-01M	Fuji Electric	N-CHANNEL SILICON POWER MOS-FET	Scan	PDF
2SK1006-01MR	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Scan	PDF
2SK1006M	Collmer Semiconductor	MOSFET Selection Guide	Scan	PDF
2SK1007	Collmer Semiconductor	MOSFET Transistors	Scan	PDF
2SK1007	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK1007	Unknown	FET Data Book	Scan	PDF

...

2SK10 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2sj239 Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL Text: MOSFET Product Matrix VdssM * 100 1 20 60 Id A 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]	OCR Scan	2SK1112 2SK1719 2SJ239 2SK2030 2SK1079 TE12L) 2SK1078 2SJ238 2sj239 TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL	PDF
2SK1011 Abstract: 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1101-01M 2SK1221-01 2SK1222-01 2SK1917-01M 2sk1211 Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M	OCR Scan	2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1011 2SK1013-01 2SK1222-01 2sk1211	PDF
2SK1083-M Abstract: 000201 A2126 Text: 2SK1083-M S IP M O S F U JI P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S O utline D raw ings •Features High current ♦02 4 5*0 2 Low on-resistance No secondary breakdow n Low driving p o w er 'H ig h fo rw ard T ransconductance	OCR Scan	2SK1083-M SC-67 80jjs A2-126 000201 A2126	PDF
s2e transistor Abstract: S2E MARKING cp 035 sanyo vds5 2SK242 2SK1065 Text: SANYO S E M I C O N D U C T O R 2SK1065 TTTTOTb ÜOOhTb? 2 SSE D CORP T - 3 1 ‘2 5 # N-Channel'Junction Silicon FET 2057 High-Frequency General-Purpose Amp Applications 2746 Features • Very small-sized package permitting 2SK1065-applied sets to be made smaller and slimmer	OCR Scan	2SK1065 2SK1065-applied s2e transistor S2E MARKING cp 035 sanyo vds5 2SK242 2SK1065	PDF
oms 450 Abstract: 2SK1086-M A2131 P channel MOSFET 10A schematic Text: 2SK1086-M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S Outline Drawings • Features 1High current k 5 *0 2 'Low on-resistance »No secondary breakdown 2 7±0 2 >l_ow driving power 1High forward Transconductance	OCR Scan	2SK1086-M SC-67 A2-132 oms 450 A2131 P channel MOSFET 10A schematic	PDF
5sV80 Abstract: A2138 00GE schematic symbol for n channel fet xldr 1088-M 088-M 2sk1 Text: 2SK1088-M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S Outline Drawings • Features • High current • Low on-resistance • No secondary b reakdow n • Low driving p o w er • High fo rw a rd T ransconductance	OCR Scan	088-M SC-67 A2-138 5sV80 A2138 00GE schematic symbol for n channel fet xldr 1088-M 2sk1	PDF
2SK1036 Abstract: No abstract text available Text: P o w e r F-MOS FET 2SK10 3 6 2S K 1036 Silicon N-channel Power F-M OS FET P ackage Dimensions • F eatures • Low ON resistance RCs on : RDs (on) = 0.211 (typ.) • High switching rate : tf = 80ns (typ.) • No secondary breakdown Unit: mm Di uvJ i o	OCR Scan	2SK1036 O-220 D01713Ã 2SK1036	PDF
2SK1006-01M Abstract: 2sk mosfet Text: 2SK1006-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F A P - I I S E R I E S Outline Drawings • Features • High speed sw itching • Lo w on-resistance • No second ary breakdow n • Lo w driving pow er • High voltage	OCR Scan	2SK1006-01M SC-67 A2-71 2SK1006-01M 2sk mosfet	PDF
2SK1083-M Abstract: No abstract text available Text: 2SK1083-M S IP M O S F U JI P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S O utline D raw ings •Features High current ♦02 4 5*0 2 Low on-resistance No secondary breakdow n Low driving p o w er 'H ig h fo rw ard T ransconductance	OCR Scan	2SK1083-M SC-67 A2-126	PDF
2SK1032 Abstract: 2SK1032A SC-65 Text: Power F-MOS FET 2SK1032, 2SK1032A 2SK1032, 2SK1032A Silicon N-channel Power F-MOS FET Package Dimensions • Features • L ow ON r e s is ta n c e R ds, on : R ds ( o n ) = 1 . 3 f l (ty p .) Unit: mm • High sw itch in g r a te : t ( = 1 2 0 n s (ty p .)	OCR Scan	2SK1032, 2SK1032A 120ns 2SK1032 Tc-25 DG1713G 2SK1032A SC-65	PDF
2SJ167 Abstract: 2SK1061 2sk106 Text: 2SK1061 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1061 High Speed Switching Applications Analog Switch Applications Interface Applications • Unit: mm Excellent switching times: ton = 14 ns typ. • High forward transfer admittance: \|Yfs\| = 100 mS (min)	Original	2SK1061 2SJ167 2SJ167 2SK1061 2sk106	PDF
2SK1093 Abstract: 2SK970 Text: 2SK1093 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,	Original	2SK1093 220FM 2SK1093 2SK970	PDF
2SK1069 Abstract: 2SK771 2SK77 Text: Ordering number:EN2749 N-Channel Junction Silicon FET 2SK1069 Low-Frequency General-Purpose Amplifier Applications Package Dimensions unit:mm 2058 [2SK1069] 0.425 • Low-frequency general-purpose amplifiers. · Ideal for use in variable resistors, analog switches,	Original	EN2749 2SK1069 2SK1069] 2SK1069applied 2SK1069 2SK771 2SK77	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SK1061 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 061 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 4.2M AX NTERFACE APPLICATIONS Excellent Switching Times ton = 14ns Typ. High Forward Transfer Admittance \|Yfs\| = lOOmS (Min.)	OCR Scan	2SK1061 2SJ167	PDF

Untitled Abstract: No abstract text available Text: 2SK1094 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive	OCR Scan	2SK1094 2SK971.	PDF
Untitled Abstract: No abstract text available Text: 2SK1098-M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-III S E R I E S • Outline Drawings ■ Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications	OCR Scan	2SK1098-M	PDF
Untitled Abstract: No abstract text available Text: 2SJ160,2SJ161,2SJ162 Silicon P-Channel MOS FET HITACHI November 1996 Application Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Features • Good frequency characteristic • High speed switching • Wide area of safe operation	OCR Scan	2SJ160 2SJ161 2SJ162 2SK1056, 2SK1057 2SK1058 2SJ160, 2SJ161, 2SJ160	PDF
T0220F Abstract: 2sk1512 2SK1217 2SK1511 T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390 Text: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)	OCR Scan	2SK1082 2SK962 2SK1217 T03PF 2SK1512 2SK1511 2SK1008-01 T0220 2SK1010-01 T0220F T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390	PDF
Untitled Abstract: No abstract text available Text: 2SK1061 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1061 High Speed Switching Applications Analog Switch Applications Interface Applications • Unit: mm Excellent switching times: ton = 14 ns typ. • High forward transfer admittance: \|Yfs\| = 100 mS (min)	Original	2SK1061 2SJ167	PDF
wt1e Abstract: 2SK 93 Text: 2SK1013-01 FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET F-II SERIES • Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V USS = ± 3 0 V Guarantee • Avalanche-proof	OCR Scan	2SK1013-01 wt1e 2SK 93	PDF
Untitled Abstract: No abstract text available Text: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK1386-01	OCR Scan	2SK2519-01 2SK2520-01 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01	PDF
Hitachi 2SJ Abstract: 2SK1058 J162 Text: 2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET HITACHI November 1996 Application Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Features • • • • • • • Good frequency characteristic High speed switching Wide area of safe operation	OCR Scan	2SJ160, 2SJ161, 2SJ162 2SK1056, 2SK1057 2SK1058 2SJ160 Hitachi 2SJ 2SK1058 J162	PDF
NI3T Abstract: te tfk TFK 03 Diode TFK U 111 B A211-1 a1ae 2SK1020 equivalent Text: 2SK1020 F U JI PO W ER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-II SERIES • Features lOutline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage •Voss —± 30V Guarantee ■Applications	OCR Scan	2SK1020 NI3T te tfk TFK 03 Diode TFK U 111 B A211-1 a1ae 2SK1020 equivalent	PDF
OAAI Abstract: A2140 Text: 2SK1089 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications • Motor controllers • General purpose power amplifier	OCR Scan	2SK1089 OAAI A2140	PDF

2SK10 Search Results

2SK10 Result Highlights (4)

2SK10 Price and Stock

Renesas Electronics Corporation 2SK1058-E

Rochester Electronics LLC 2SK1093-E

Rochester Electronics LLC 2SK1060-AZ

Renesas Electronics Corporation 2SK1070PIETL-E

Renesas Electronics Corporation 2SK1070PIETR-E

2SK10 Datasheets (500)

2SK10 Datasheets Context Search

2sj239

2SK1011

2SK1083-M

s2e transistor

oms 450

5sV80

2SK1036

2SK1006-01M

2SK1083-M

2SK1032

2SJ167

2SK1093

2SK1069

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T0220F

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wt1e

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Hitachi 2SJ

NI3T

OAAI