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    2SJ13 Search Results

    2SJ13 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SJ138-Z-E1-AZ Renesas Electronics Corporation Mosfets Suitable For Switching (Motor Drive, Etc.) And Load Switch Applications Visit Renesas Electronics Corporation
    2SJ133-Z-AZ Renesas Electronics Corporation P-Channel Power Mosfet For Switching Visit Renesas Electronics Corporation
    2SJ130STL-E Renesas Electronics Corporation Silicon P Channel MOSFET Visit Renesas Electronics Corporation
    2SJ138-AZ Renesas Electronics Corporation Mosfets Suitable For Switching (Motor Drive, Etc.) And Load Switch Applications Visit Renesas Electronics Corporation
    2SJ133-Z-E2-AZ Renesas Electronics Corporation P-Channel Power Mosfet For Switching Visit Renesas Electronics Corporation
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    2SJ13 Price and Stock

    Panasonic Electronic Components ERG-2SJ132A

    RES 1.3K OHM 5% 2W AXIAL
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    DigiKey ERG-2SJ132A Reel 15,000 3,000
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    TTI ERG-2SJ132A Ammo Pack 3,000
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    Panasonic Electronic Components ERG-2SJ130A

    RES 13 OHM 5% 2W AXIAL
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    DigiKey ERG-2SJ130A Reel 3,000 3,000
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    Bristol Electronics ERG-2SJ130A 2,800 23
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    Panasonic Electronic Components ERG-2SJ130

    RES 13 OHM 5% 2W AXIAL
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    DigiKey ERG-2SJ130 Bulk 1,340 1
    • 1 $0.3
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    • 100 $0.0985
    • 1000 $0.06073
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    Panasonic Electronic Components ERG-2SJ131

    RES 130 OHM 5% 2W AXIAL
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    DigiKey ERG-2SJ131 Bulk 1,000 1
    • 1 $0.3
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    • 100 $0.0985
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    Bristol Electronics ERG-2SJ131 1,091
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    Panasonic Electronic Components ERG-2SJ133V

    RES 13K OHM 5% 2W AXIAL
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    DigiKey ERG-2SJ133V Cut Tape 899 1
    • 1 $0.31
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    • 100 $0.1013
    • 1000 $0.07184
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    ERG-2SJ133V Ammo Pack
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    Find more 2SJ13 price and stock on Findchips.com

    2SJ13 Datasheets (81)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ13 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SJ13 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SJ13 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SJ13 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ13 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SJ13 Unknown FET Data Book Scan PDF
    2SJ130 Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF
    2SJ130 Renesas Technology Silicon P-Channel MOS FET High speed power switching Original PDF
    2SJ130 Renesas Technology Silicon P Channel MOS FET Original PDF
    2SJ130 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SJ130 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ1302 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SJ130(L) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SJ130L Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF
    2SJ130(L) Renesas Technology Silicon P Channel MOS FET Original PDF
    2SJ130L Renesas Technology Silicon P-Channel MOS FET High speed power switching Original PDF
    2SJ130L Renesas Technology Silicon P Channel MOS FET Original PDF
    2SJ130L Renesas Technology Silicon P-Channel MOS FET Original PDF
    2SJ130L Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SJ130L-E Renesas Technology Silicon P Channel MOS FET Original PDF

    2SJ13 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SJ130

    Abstract: Hitachi DSA00347
    Text: 2SJ130 L , 2SJ130(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators


    Original     		PDF 2SJ130 Hitachi DSA00347

    Hitachi DSA002756

    Abstract: Hitachi 2SJ
    Text: 2SJ130 L , 2SJ130(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators


    Original     		PDF 2SJ130 Hitachi DSA002756 Hitachi 2SJ

    2sJ133 MOSFET

    Abstract: 2SJ133 2SJ133-Z 133Z
    Text: データ・シート MOS形電界効果パワー・トランジスタ MOS Field Effect Power Transistors 2SJ133,133-Z Pチャネル・パワー MOSFET スイッチング用 特 徴 外形図（単位：mm） ★ 6.5 ±0.2 ○2SJ133-ZはハイブリッドIC実装に最適なリード加工品です。


    Original     		PDF 2SJ133 133-Z 2SJ133-ZIC PW300 Cycle10 O-251MP-3 O-252MP-3Z D16193JJ3V0DS003 TC-6282A 2sJ133 MOSFET 2SJ133-Z 133Z

    Untitled

    Abstract: No abstract text available
    Text: 2SJ134 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)6.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)24 @Pulse Width (s) (Condition)100u Absolute Max. Power Diss. (W)40# Minimum Operating Temp (øC)


    Original     		PDF 2SJ134

    Untitled

    Abstract: No abstract text available
    Text: 2SJ132 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)20 I(D) Max. (A)2.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20 Minimum Operating Temp (øC)


    Original     		PDF 2SJ132

    Untitled

    Abstract: No abstract text available
    Text: 2SJ133 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)2.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20 Minimum Operating Temp (øC)


    Original     		PDF 2SJ133

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SJ132,132-Z P-CHANNEL POWER MOSFET FOR SWITCHING <R> FEATURES PACKAGE DRAWING UNIT: mm 5.0 ±0.2 Unit VGS = 0 V −30 V VGSS VDS = 0 V m20 V Drain current (DC) ID(DC) TC = 25°C m2.0 A Drain current (pulse) ID(pulse)


    Original     		PDF 2SJ132 132-Z 2SJ132-Z

    D1619

    Abstract: 2SJ133 2SJ133-Z C11531E
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ133, 2SJ133-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Gate drive available at logic level (VGS = –4 V) • High current control available in small dimension due to low RDS(on) (≅ 0.45 Ω)


    Original     		PDF 2SJ133, 2SJ133-Z 2SJ133-Z C11531E) D1619 2SJ133 C11531E

    ULTRASONIC parking system

    Abstract: Hitachi 2SJ Hitachi DSA001651
    Text: 2SJ130 L , 2SJ130(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators


    Original     		PDF 2SJ130 D-85622 ULTRASONIC parking system Hitachi 2SJ Hitachi DSA001651

    drain body breakdown voltage

    Abstract: 2SJ130S
    Text: Transistors IC SMD Type Silicon P-Channel MOS FET 2SJ130S TO-252 Features Low on-resistance High speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 ultrasonic power oscillators 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15


    Original     		PDF 2SJ130S O-252 drain body breakdown voltage 2SJ130S

    Untitled

    Abstract: No abstract text available
    Text: 2SJ138 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)48 @Pulse Width (s) (Condition)100u Absolute Max. Power Diss. (W)60 Minimum Operating Temp (øC)


    Original     		PDF 2SJ138

    Untitled

    Abstract: No abstract text available
    Text: 2SJ135 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)5.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)20 @Pulse Width (s) (Condition)25 Absolute Max. Power Diss. (W)30 Minimum Operating Temp (øC)


    Original     		PDF 2SJ135

    2sJ132 MOSFET

    Abstract: 2SJ132 2SJ132-Z 132-Z
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SJ132,132-Z P-CHANNEL POWER MOSFET FOR SWITCHING PACKAGE DRAWING UNIT: mm FEATURES 6.5 ±0.2 • 2SJ132-Z is a lead process product and is ideal for mounting a hybrid IC. 5.0 ±0.2 −30 V VGSS VDS = 0 V m20


    Original     		PDF 2SJ132 132-Z O-251 2sJ132 MOSFET 2SJ132-Z 132-Z

    2sj28

    Abstract: 2SJ72 2sj26 2SJ83 2SJ99 2SJ96 2SJ18 2SJ82 2SJ90 2SJ73
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) Pd/Pch Tj/Tch min UP07 2N5465 2SJ10 2SJ11 2SJ12 2SJ13 2SJ15 2SJ16 2SJ17 2SJ18 2SJ19 2SJ20 2SJ21 2SJ22 2SJ26 2SJ27 2SJ28 2SJ29 2SJ32 2SJ33 2SJ39 2SJ40


    Original     		PDF 2N5465 2SJ10 2SJ11 2SJ12 2SJ13 2SJ15 2SJ16 2SJ17 2SJ18 2SJ19 2sj28 2SJ72 2sj26 2SJ83 2SJ99 2SJ96 2SJ18 2SJ82 2SJ90 2SJ73

    nec 772

    Abstract: 2SJ138 NEC J 302 NEC 7900 fet 9411 7824 5A C9411 m 9619 3A03U
    Text: M O S Field E ffe ct P o w e r T ra n sisto r 2SJ138 MOS rj 2SJ138 i , v y FET T . f o t i i - v f X > r r ^ 5VïÉtëi&IC < i ftw m ( i | i f i : mm z v t o en •+ > m û # . < , ■■/ ^ > n # i 4 1 ^ a t ^ h fz ih , -t - a ? , 41 MAX. en 10.0 O


    OCR Scan     		PDF 2SJ138 2SJ138 nec 772 NEC J 302 NEC 7900 fet 9411 7824 5A C9411 m 9619 3A03U

    ht 25 transistor

    Abstract: 2SJ139
    Text: ~J m o s y=7 > > * 9 M O S F ield E ffe c t P o w e r T r a n s is to r J 2SJ139 P MOS FE T nm m 2SJI39U. P -f n ffiljK i Ô* MOS FET ~C. 5 Y « * 4 1C « « ! * ry & iiv n t, y u Z 4 K, ->>-r<rU9 P « * * n m S 1 l{ i : mm -f / f > r ^ ' < f X T t . *-*.


    OCR Scan     		PDF 2SJ139 2SJI3911. ht 25 transistor 2SJ139

    Untitled

    Abstract: No abstract text available
    Text: 2SJ130 L , 2SJ130(S) Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators


    OCR Scan     		PDF 2SJ130 2SJ130Ã

    FUH -29A001B

    Abstract: 2SJ134
    Text: MOS M O S Field E ffe c t P o w e r T ransistor 2SJ134 J P M O S FET n m m 2SJI34 It. P * <- f f > * <. x i mm MOS FE T T . 5 r-f * ». l^ 5 = r T Fi,!" Wffe A « K.’t >«tit-c-r. m a T.J K » * . . , i 0 . 6 U V .; t - I O V. ID = - 3 . 5 A R „.,.,S 0 .9 fl «Ve* ^


    OCR Scan     		PDF 2SJ134 2SJI34 FUH -29A001B 2SJ134

    2SJ135

    Abstract: JEP-772 UPC1100
    Text: M O S Field E ffe c t P o w e r T ra n s is to r 2SJ135 MOS 2SJ135 i i , P f ^ ^ oT l l \ t } i 2 £ h v * > k M . MOS F E T T , l ' Î f ë r < . k *7 - •> > x -r ■■/ * > ? r y f- > r i # f ± 5 V '» ^ IC / < -f X ¥-i*V : m m ) T -f „ t, i # a


    OCR Scan     		PDF 2SJ135 2SJ135 JEP-772 UPC1100

    2SJ139

    Abstract: 2SJ139,J139
    Text: NEC P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SJ139 The 2SJ139 is P-Channel MOS Field E ffect Power Transistor PAC KAG E D IM EN SIO N S designed fo r solenoid, m o to r and lamp driver. FEATURES • 4 V Gate Drive — Logic level —


    OCR Scan     		PDF 2SJ139 2SJ139 1987M 2SJ139,J139

    k 3919

    Abstract: 2SJ137
    Text: N E C ELECTRONICS INC ' Tfi DE j b 4 S 7 S B S O D n D S l □ | ~ T ^ P RELIMINARY SFEClFiCAT.C MOS FIELD EFFECT TRAXSISTC: 2SJ137 FAST SWITCHING P-CHANNEL SILICON POWER MOS FET PACKAGE DIMENSIONS Features U nit : m m Suitable for switching power supplies,


    OCR Scan     		PDF 2SJ137 T-39-19 h427S2S S71CS k 3919 2SJ137

    2sj155

    Abstract: GDS-820 2SJ162 2SJ140 2S1164 2SJ159 2SJ144 2SJ147 2SJ138 2SJ139
    Text: - 20 - f =e m ¡s *± € m S & ft £ * K V * * (V) Pp/PCH * (A) (W) te m 5(1 (Ta=25‘ C) Igss (max) (A) 9f è JV ie , X I* V * Vg s (V) (min) (A) (max) (A) Vd s (V) (min) (V) (max) (V) Vd s (V ) Id (A) (min) (S) ! 3 > Vds (V ) ÍD (A) 2SJ138 NEC SW


    OCR Scan     		PDF 2SJ138 2SJ139 2SJ140 2SJ141 IOO11 2SJI42 K1056 2SJ160 2SK1057 2SJ161 2sj155 GDS-820 2SJ162 2S1164 2SJ159 2SJ144 2SJ147

    2SJ136

    Abstract: No abstract text available
    Text: r M O S F ie ld E f f e c t P o w e r T r a n s is to r 2SJ136 FE T l i f f l 2SJ1361Ì. P + - * MOS F E T ? . 5 V « f t f t 1C f i m ì i i z t « * « » « & £ • - u t ', c u t x < 7t > * * '• < * T - r . tU . x f t- f. « I MAX • / w / < K. ^ y - r / iW P P u liü ^ i- .


    OCR Scan     		PDF 2SJ136 2SJ136; 2SJ136

    Untitled

    Abstract: No abstract text available
    Text: 2SJ130 L , 2SJ130(S) Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators


    OCR Scan     		PDF 2SJ130 2SJ130CS) 2SJ13Q