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    2SJ18 Search Results

    2SJ18 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SJ185-T1B-A Renesas Electronics Corporation Power MOSFETs for Automotive, MM, / Visit Renesas Electronics Corporation
    2SJ181STR-E Renesas Electronics Corporation Pch Single Power Mosfet -600V -0.5A 25000Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
    2SJ185-T2B-A Renesas Electronics Corporation Power MOSFETs for Automotive, MM, / Visit Renesas Electronics Corporation
    2SJ181L-E Renesas Electronics Corporation Pch Single Power Mosfet -600V -0.5A 25000Mohm DPAK(L)-(1)/To-251 Visit Renesas Electronics Corporation
    2SJ182STL-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -3A 400Mohm DPAK(S) Visit Renesas Electronics Corporation
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    2SJ18 Price and Stock

    TE Connectivity ROX2SJ180R

    RES 180 OHM 5% 2W AXIAL
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    TE Connectivity ROX2SJ18K

    RES 18K OHM 5% 2W AXIAL
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    TE Connectivity ROX2SJ18R

    RES 18 OHM 5% 2W AXIAL
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    DigiKey ROX2SJ18R Cut Tape 12,125 1
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    TE Connectivity ROX2SJ180K

    RES 180K OHM 5% 2W AXIAL
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    DigiKey ROX2SJ180K Cut Tape 5,018 1
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    Panasonic Electronic Components ERG-2SJ181

    RES 180 OHM 5% 2W AXIAL
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    DigiKey ERG-2SJ181 Bulk 2 1
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    2SJ18 Datasheets (124)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ18 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ18 Unknown FET Data Book Scan PDF
    2SJ18 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SJ18 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SJ18 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SJ180 NEC Semiconductor Selection Guide 1995 Original PDF
    2SJ180 NEC Semiconductor Selection Guide Original PDF
    2SJ180 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ180 Unknown FET Data Book Scan PDF
    2SJ180 NEC P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING Scan PDF
    2SJ180 NEC P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING Scan PDF
    2SJ181 Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF
    2SJ181 Renesas Technology Silicon P-Channel MOS FET High speed power switching Original PDF
    2SJ181 Renesas Technology Silicon P Channel MOS FET Original PDF
    2SJ181 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SJ181 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ181 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ181(L) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SJ181(L) Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF
    2SJ181L Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF
    ...

    2SJ18 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN3509A P-Channel Silicon MOSFET 2SJ187 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ187] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5


    Original     		PDF EN3509A 2SJ187 2SJ187] 25max

    Hitachi 2SJ

    Abstract: Hitachi DSA001651
    Text: 2SJ181 L , 2SJ181(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter


    Original     		PDF 2SJ181 Hitachi 2SJ Hitachi DSA001651

    2SJ187

    Abstract: 3509-1 35094 2062a 35092
    Text: Ordering number:EN3509A P-Channel Silicon MOSFET 2SJ187 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ187] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5


    Original     		PDF EN3509A 2SJ187 2SJ187] 25max 2SJ187 3509-1 35094 2062a 35092

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SJ181 L , 2SJ181(S) R07DS0395EJ0300 (Previous: REJ03G0848-0200) Rev.3.00 May 16, 2011 Silicon P Channel MOS FET Description High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current


    Original     		PDF 2SJ181 R07DS0395EJ0300 REJ03G0848-0200) PRSS0004ZD-A PRSS0004ZD-C

    equivalent smd mosfet

    Abstract: 2SJ181S
    Text: MOSFET SMD Type P-Channel MOS FET For High-Speed Switching 2SJ181S TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 No secondary breakdown Suitable for switching regulator and DC-DC converter 2.3 +0.1 0.60-0.1


    Original     		PDF 2SJ181S O-252 equivalent smd mosfet 2SJ181S

    Hitachi 2SJ

    Abstract: Hitachi DSA002756
    Text: 2SJ186 Silicon P-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline 2SJ186 Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2SJ186 Hitachi 2SJ Hitachi DSA002756

    Hitachi 2SJ

    Abstract: Hitachi DSA002779
    Text: 2SJ181 L , 2SJ181(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline


    Original     		PDF 2SJ181 Hitachi 2SJ Hitachi DSA002779

    2SJ181

    Abstract: Hitachi DSA00347
    Text: 2SJ181 L , 2SJ181(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline


    Original     		PDF 2SJ181 Hitachi DSA00347

    2SJ188

    Abstract: No abstract text available
    Text: Ordering number:EN3761A P-Channel Silicon MOSFET 2SJ188 Ultrahigh-Speed Switching Applications Features • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. Package Dimensions unit:mm 2083B [2SJ188] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5


    Original     		PDF EN3761A 2SJ188 2083B 2SJ188] 2092B 2SJ188

    2SJ181

    Abstract: Hitachi 2SJ Hitachi DSA00316
    Text: 2SJ181 L , 2SJ181(S) Silicon P-Channel MOS FET ADE-208-1183 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter


    Original     		PDF 2SJ181 ADE-208-1183 Hitachi 2SJ Hitachi DSA00316

    2SJ186

    Abstract: Hitachi 2SJ DSA003638
    Text: 2SJ186 Silicon P-Channel MOS FET ADE-208-1184 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		PDF 2SJ186 ADE-208-1184 2SJ186 Hitachi 2SJ DSA003638

    2SJ469

    Abstract: No abstract text available
    Text: 1 VDSS = 20V 30V, P-channel Electrical characteristics atTa =25 C Absolute maximum ratings at Ta =25°C Type No. Package Voss m 2SJ284 W CP •o W 0.3 2SJ187 2SJ287 VG8S ±15 2SJ416 m «5 VGS o mtntomax W 0.25+ 1.0 0.5 PCP Po* 1.0 to 2.0 3.5 120 1.0 to 2.5


    OCR Scan     		PDF 2SJ284 2SJ187 2SJ287 2SJ416 2SJ188 O-220 O-220ML 2SJ189 2SJ417 2SJ418 2SJ469

    Untitled

    Abstract: No abstract text available
    Text: 2SJ186 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline


    OCR Scan     		PDF 2SJ186

    2SJ187

    Abstract: No abstract text available
    Text: 2SJ187 LD L o w D r iv e S e r ie s 2062 V dss = 30V P Channel Power M OSFET F eatu res •Low ON resistance ■Very high-speed switching ■Low-voltage drive A bsolute M axim um R atin g s a tT a = 25°C Drain to Source Voltage V d ss Gate to Source Voltage


    OCR Scan     		PDF 2SJ187 --10V, -500m 500mA, 10/ks, N1292MH X-6951 2SJ187

    Untitled

    Abstract: No abstract text available
    Text: 2SJ181 L , 2SJ181(S) Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter


    OCR Scan     		PDF 2SJ181 2SJ181Ã

    fet e300

    Abstract: 2SJ185 2SK1399 T100 T200 p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING marking
    Text: MOS FIELD EFFECT TRANSISTOR 2SJ185 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING OUTLINE DIMENSIONS Unit mm 2.8 ± 0.2 1.5 3 l € 0.65i§:05 FEATURES - 3 The 2SJ185 is a P-channel vertical type MOS FET w hich can be driven by 2.5 V power supply. As the MOS F ET is driven by low voltage and does not require con­


    OCR Scan     		PDF 2SJ185 2SJ185 fet e300 2SK1399 T100 T200 p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING marking

    2sj182

    Abstract: No abstract text available
    Text: LIE D 44=^205 Güie'ÎS? 157 IHIT4 2SJ182 L,2SJ182 s HITACHI/(OPTOELECTRONICS SIUCON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING □ • FEATURES • • • • • Low On-Resistance High Speed Switching Low Drive Current 4 V Gate Drive Device - Can be driven from 5 V source


    OCR Scan     		PDF 2SJ182 2SJ182

    2SJ184

    Abstract: 2SK1398 ScansUX882
    Text: MOS M O S Field Effect T ra n sisto r 2 S J 1 8 4 MOS FET 2SJ184ÜP FETfi»' , ^ -{ÎL 7 f > / •r ' < 4 X t L T ^ i i f ' t o ^ M O S F E T (i 4 .0 ± 0 .2 • mm [ 2 .5 V (V i& W kT M ihT è Ztzish, ^ -y K 7 * > • X r 1 / 7 ^ 6 0 ' t i t £ T f t tfi * f t K 'ft


    OCR Scan     		PDF 2SJ184 2SJ184 o2SK1398 2SK1398 ScansUX882

    Untitled

    Abstract: No abstract text available
    Text: 2SJ181 L , 2SJ181(S) Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter


    OCR Scan     		PDF 2SJ181 2SJ18KL) 2SJ18KS) Ele99

    S10ms

    Abstract: 2SJ184 2SK1398 T100 T200 TC-7645A
    Text: MOS FIELD EFFECT TRANSISTOR 2SJ184 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ184, P-channel vertical type MOS FET, is a switching device OUTLINE DIMENSIONS U n it: mm 2.0 ± 0.2 4.0±0.2 o -H o 4 -0 .5 0 FEATURES Ft IO ö 0.45 w hich can be driven by 2.5 V power supply.


    OCR Scan     		PDF 2SJ184 2SJ184, S10ms 2SJ184 2SK1398 T100 T200 TC-7645A

    2SJ180

    Abstract: No abstract text available
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SJ180 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ180, P-channel vertical type MOS FET, is a switching device


    OCR Scan     		PDF 2SJ180 2SJ180, 2SJ180

    Untitled

    Abstract: No abstract text available
    Text: 2SJ189 • ♦ 2083A 2092A LD L o w D riv e S e rie s V DSs= 3 0 V P Channel Power M OSFET 3762A F e a tu re s •Low ON resistance • Very high-speed switching • Low-voltage drive A b so lu te M axim um R a tin g s at Ta = 25°C Drain to Source Voltage


    OCR Scan     		PDF 2SJ189 --10V, 42893TH/N1292MH

    2SJ180

    Abstract: No abstract text available
    Text: MOS FIELD EFFECT TRANSISTOR 2SJ180 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ180, P-channel vertical type MOS FET, is a switching device w hich can be driven d ire ctly by the o u tp u t o f ICs having a 5 V power OUTLINE DIMENSIONS U n it: mm source.


    OCR Scan     		PDF 2SJ180 2SJ180, 2SJ180

    2SJ188

    Abstract: 2092A
    Text: 2SJ188 2083A LD L o w D rive Series V Dss = 3 0 V 2092A P Channel Power MOSFET 3761A F e a tu re s - Low ON resistance • Very high-speed switching • Low-voltage drive A bsolute M axim um R atin g s at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage


    OCR Scan     		PDF 2SJ188 376IA 10/is, 100/iA, 13A21 2SJ188 2092A