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    2SJ16 Search Results

    2SJ16 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    2SJ162-E Renesas Electronics Corporation Silicin P Channel Mosfet Visit Renesas Electronics Corporation
    2SJ166-T1B-A Renesas Electronics Corporation Power MOSFETs for Automotive, MM, / Visit Renesas Electronics Corporation
    2SJ166-T2B-A Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SJ160-E Renesas Electronics Corporation Silicin P Channel Mosfet Visit Renesas Electronics Corporation
    2SJ165-T-A Renesas Electronics Corporation P-Channel Mosfet For Switching Visit Renesas Electronics Corporation
    2SJ161-E Renesas Electronics Corporation Silicin P Channel Mosfet Visit Renesas Electronics Corporation
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    2SJ16 Price and Stock

    Rochester Electronics LLC 2SJ166(1)-T1B-A

    P-CHANNEL, MOSFET
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    DigiKey 2SJ166(1)-T1B-A Bulk 62,196 601
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    Toshiba America Electronic Components 2SJ168TE85LF

    MOSFET P-CH 60V 200MA SC59
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    DigiKey 2SJ168TE85LF Reel 12,000 3,000
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    2SJ168TE85LF Cut Tape 635 1
    • 1 $0.84
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    2SJ168TE85LF Digi-Reel 1
    • 1 $0.84
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    ComSIT USA 2SJ168TE85LF 3,000
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    Panasonic Electronic Components ERG-2SJ163

    RES 16K OHM 5% 2W AXIAL
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    DigiKey ERG-2SJ163 Bulk 588 6,000
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    Master Electronics ERG-2SJ163 4,470
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    Renesas Electronics Corporation 2SJ162-E

    MOSFET P-CH 160V 7A TO3P
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    DigiKey 2SJ162-E Tube
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    Rochester Electronics 2SJ162-E 2 1
    • 1 $29.14
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    Panasonic Electronic Components ERG-2SJ162

    RES 1.6K OHM 5% 2W AXIAL
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    Find more 2SJ16 price and stock on Findchips.com

    2SJ16 Datasheets (93)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SJ16 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SJ16 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ16 Unknown FET Data Book Scan PDF
    2SJ16 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SJ16 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SJ160 Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF
    2SJ160 Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF
    2SJ160 Renesas Technology Silicon P Channel MOS FET Original PDF
    2SJ160 Renesas Technology Silicon P-Channel MOS FET Original PDF
    2SJ160 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SJ160 Hitachi Semiconductor Silicon P-Channel MOS FET Scan PDF
    2SJ160 Unknown Scan PDF
    2SJ160 Unknown FET Data Book Scan PDF
    2SJ160 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SJ160 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ160-E Renesas Technology Silicon P Channel MOS FET Original PDF
    2SJ161 Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF
    2SJ161 Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF
    2SJ161 Renesas Technology Silicon P Channel MOS FET Original PDF
    2SJ161 Renesas Technology Silicon P-Channel MOS FET Original PDF

    2SJ16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK1104

    Abstract: 2SJ0164 2SJ164
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0164 (2SJ164) Silicon P-channel junction FET For switching circuits Complementary to 2SK1104 • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b


    Original     		PDF 2002/95/EC) 2SJ0164 2SJ164) 2SK1104 2SK1104 2SJ0164 2SJ164

    Untitled

    Abstract: No abstract text available
    Text: 2SK1103 Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction Unit : mm For switching Complementary with 2SJ163 +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 +0.1 3 V Drain current ID ±20 mA Gate current IG 10 mA Allowable power dissipation


    Original     		PDF 2SK1103 2SJ163

    2SK1058

    Abstract: Hitachi 2SJ Hitachi DSA002780 HITACHI 2sk1058
    Text: 2SK1056, 2SK1057, 2SK1058 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features • • • • • • • Good frequency characteristic High speed switching Wide area of safe operation


    Original     		PDF 2SK1056, 2SK1057, 2SK1058 2SJ160, 2SJ161 2SJ162 2SK1056 2SK1058 Hitachi 2SJ Hitachi DSA002780 HITACHI 2sk1058

    2SJ168

    Abstract: 2SK1062 Toshiba 2SJ
    Text: 2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)


    Original     		PDF 2SJ168 2SK1062 2SJ168 2SK1062 Toshiba 2SJ

    specification of 2SK1058

    Abstract: 2sk1058 2SJ162 2sk1058 equivalent transistor 2sj162 2SK1058 SAT-12 2SJ160 2SJ161 2SJ162 2SK1056
    Text: 2SK1056, 2SK1057, 2SK1058 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features • • • • • • • Good frequency characteristic High speed switching Wide area of safe operation


    Original     		PDF 2SK1056, 2SK1057, 2SK1058 2SJ160, 2SJ161 2SJ162 2SK1056 specification of 2SK1058 2sk1058 2SJ162 2sk1058 equivalent transistor 2sj162 2SK1058 SAT-12 2SJ160 2SJ162 2SK1056

    2SK1104

    Abstract: 2SJ164 SC-72
    Text: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 unit: mm 3.0±0.2 4.0±0.2 • Features 15.6±0.5 ● Low ON-resistance ● Low-noise characteristics Ratings Unit Gate to Drain voltage VGDS


    Original     		PDF 2SK1104 2SJ164 SC-72 2SK1104 2SJ164 SC-72

    Toshiba 2SJ

    Abstract: No abstract text available
    Text: 2SJ167 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ167 High Speed Switching Applications Analog Switch Applications Interface Applications • Unit: mm Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)


    Original     		PDF 2SJ167 2SK1061 2SJ167esented Toshiba 2SJ

    2SK1104

    Abstract: 2SJ164
    Text: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 unit: mm 2.0±0.2 (0.8) 3.0±0.2 4.0±0.2 ● Low ON-resistance ● Low-noise characteristics 7.6 • Features 15.6±0.5 ■ Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1104 2SJ164 2SK1104 2SJ164

    Untitled

    Abstract: No abstract text available
    Text: 2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)


    Original     		PDF 2SJ168 2SK1062

    2sj162

    Abstract: hitachi audio power amplifier HITACHI 2SJ162 2SK1058 2SJ160 Hitachi 2SJ Hitachi DSA002756 2SK1057 hitachi all fet audio application
    Text: 2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Features • • • • • • • Good frequency characteristic High speed switching Wide area of safe operation


    Original     		PDF 2SJ160, 2SJ161, 2SJ162 2SK1056, 2SK1057 2SK1058 2SJ160 2sj162 hitachi audio power amplifier HITACHI 2SJ162 2SK1058 Hitachi 2SJ Hitachi DSA002756 hitachi all fet audio application

    Untitled

    Abstract: No abstract text available
    Text: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 unit: mm 2.0±0.2 (0.8) 3.0±0.2 M Di ain sc te on na tin nc ue e/ d 4.0±0.2 ● Low ON-resistance ● Low-noise characteristics 7.6 • Features


    Original     		PDF 2SK1104 2SJ164

    2SJ0163

    Abstract: 2SJ163 2SK1103
    Text: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 Unit VGDS 65 V Drain current ID −20 mA Gate current IG −10 mA Allowable power dissipation


    Original     		PDF 2SJ0163 2SJ163) 2SK1103 2SJ0163 2SJ163 2SK1103

    2SK1104

    Abstract: 2SJ164 2sj16
    Text: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 M Di ain sc te on na tin nc ue e/ d unit: mm 2.0±0.2 ● Low ON-resistance ● Low-noise characteristics 15.6±0.5 • Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1104 2SJ164 2SK1104 2SJ164 2sj16

    Untitled

    Abstract: No abstract text available
    Text: 2SJ167 TO SH IBA TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPPED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2 S J 1 67 ANALOG SWITCH APPLICATIONS INTERFACE APPLICATIONS Excellent Switching Time t0n - 14 ns Typ. High Forward Transfer Admittance |Yfs| = lOOmS (Min.)


    OCR Scan     		PDF 2SJ167 2SK1061 000707EAA1

    K1132

    Abstract: 2SJ166 2SJ186 2SK1132 T100
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 m - MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE 2SJ166 P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING


    OCR Scan     		PDF 2SJ166 2SJ166, K1132 2SJ166 2SJ186 2SK1132 T100

    Hitachi 2SJ

    Abstract: 2SK1058 J162
    Text: 2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET HITACHI November 1996 Application Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Features • • • • • • • Good frequency characteristic High speed switching Wide area of safe operation


    OCR Scan     		PDF 2SJ160, 2SJ161, 2SJ162 2SK1056, 2SK1057 2SK1058 2SJ160 Hitachi 2SJ 2SK1058 J162

    2SK1132

    Abstract: TRANSISTOR DG S-10 ifr 641 2SJ165 TC-7517B
    Text: MO M O S Field Effect Transistor MOS F E T 2SJ165 {i P • mm F E T T & 9, Ü X >f -y f - > ^ " r 'X ^ f X h L T H i t T - t c # tc , ± 0 :2 J V T R ^ ^ - f 'V F7 > y X ^ => 6‘ • x - i17 f £ - H i â ' C i '0 4-*•■■ < £> & o m 0.42 z s o & A ti4


    OCR Scan     		PDF 2SJ165 2SK1132 TRANSISTOR DG S-10 ifr 641 2SJ165 TC-7517B

    2SJ162

    Abstract: 2SJ160 KC510 2SK1058 2SJ161 2SK1056 2SK1057 T160 25J160 25J16
    Text: HITACHI 2SJ160,2SJ161,2SJ162 SILICON P-CHANNEL MOS FET LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SK1056, 2SK1057 and 2SK1058 • FEATURES • • • • • • • 1. Gate Good Frequency Characteristic High Speed Switching Wide Area of Safe Operation


    OCR Scan     		PDF 2SJ160 2SJ161 2SJ162 2SK1056, 2SK1057 2SK1058 Ta-25 Tc-25 25J160 2SJ162 KC510 2SK1058 2SK1056 T160 25J16

    2SK1058

    Abstract: 2SJ162 2sk1058 2SJ162 2SK1056 2SJ160 2SJ161 2SK1057 Hitachi Scans-001
    Text: 2SK1056, 2SK1057, 2SK1058 Silicon N-Channel MOS FET HITACHI November 1996 Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features • Good frequency characteristic • High speed switching • Wide area of safe operation


    OCR Scan     		PDF 2SK1056, 2SK1057, 2SK1058 2SJ160, 2SJ161 2SJ162 2SK1056 2SK1058 2SJ162 2sk1058 2SJ162 2SK1056 2SJ160 2SK1057 Hitachi Scans-001

    2SJ167

    Abstract: 2SK1061 2SK106
    Text: 2SJ167 TO SH IBA TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPPED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2 S J 1 67 ANALOG SWITCH APPLICATIONS INTERFACE APPLICATIONS Excellent Switching Time t0n - 14 ns Typ. High Forward Transfer Admittance |Yfs| = lOOmS (Min.)


    OCR Scan     		PDF 2SJ167 2SK1061 000707EAA1 2SJ167 2SK1061 2SK106

    Toshiba 2SJ

    Abstract: 2SK106
    Text: 2SJ167 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPPED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2 S J 16 7 Unit in mm ANALOG SWITCH APPLICATIONS 4.2 IVIAX. INTERFACE APPLICATIONS Excellent Switching Time : ton = 14ns Typ. High Forward Transfer Admittance ; |Yfs| = lQOmS (Min,)


    OCR Scan     		PDF 2SJ167 2SK1061 55MAX. Toshiba 2SJ 2SK106

    2SJ170

    Abstract: No abstract text available
    Text: 2SJ169,2SJ 170-blE » • MM'IbSDS O G i a 1^ ÛÛ7 « H I T M H IT ACH I/ OP TOELECTRO NIC S SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES • • Low On-Resistance High Speed Switching • Low Drive Current • • No Secondary Breakdown


    OCR Scan     		PDF 2SJ169, 2SJ170 T0-220A 2SJ170

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ167 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2 S J 1 67 HIGH SPPED SWITCHING APPLICATIONS Unit in mm ANALOG SWITCH APPLICATIONS 4.2MAX. INTERFACE APPLICATIONS Excellent Switching Time : ton = 14 ns Typ. 0.55MAX. High Forward Transfer Admittance : |Yfs| = 100 mS (Min.)


    OCR Scan     		PDF 2SJ167 55MAX. 2SK1061

    k 1058

    Abstract: K1058 2sk1058 K1057 Hitachi 2SJ
    Text: 2SK1056,2SK1057, 2SK1058 Silicon N-Channel MOS FET HITACHI Application Low frequency pow er am plifier C om plem entary pair w ith 2SJ160, 2SJ161 and 2SJ162 Features • G ood frequency characteristic • H igh speed sw itching • W ide area o f safe operation


    OCR Scan     		PDF 2SK1056 2SK1057, 2SK1058 2SJ160, 2SJ161 2SJ162 2SK1057 k 1058 K1058 2sk1058 K1057 Hitachi 2SJ