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    2SJ26 Search Results

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    2SJ26 Price and Stock

    Rochester Electronics LLC 2SJ263

    POWER MOSFET FOR MOTOR DRIVERS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SJ263 Bulk 6,780 275
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.09
    • 10000 $1.09
    		Buy Now

    Rochester Electronics LLC 2SJ266-DL-E

    PCH 4V DRIVE SERIES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SJ266-DL-E Bulk 365
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.82
    • 10000 $0.82
    		Buy Now

    onsemi 2SJ263

    2SJ263 - Large-Signal Power MOSFET For 60V Motor Drivers '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SJ263 6,780 1
    • 1 $1.1
    • 10 $1.1
    • 100 $1.04
    • 1000 $0.9379
    • 10000 $0.9379
    		Buy Now

    onsemi 2SJ266-DL-E

    2SJ266 - P-Channel 4V DRIVE SERIES '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SJ266-DL-E 6,000 1
    • 1 $0.8304
    • 10 $0.8304
    • 100 $0.7806
    • 1000 $0.7058
    • 10000 $0.7058
    		Buy Now

    SANYO Semiconductor Co Ltd 2SJ263

    2SJ263 - Large-Signal Power MOSFET For 60V Motor Drivers '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SJ263 47 1
    • 1 $1.1
    • 10 $1.1
    • 100 $1.04
    • 1000 $0.9379
    • 10000 $0.9379
    		Buy Now
    Find more 2SJ26 price and stock on Findchips.com

    2SJ26 Datasheets (38)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SJ260 Sanyo Semiconductor Ultra High Speed Switching MOSFET Scan PDF
    2SJ260 Sanyo Semiconductor Large Signal Power MOSFET Scan PDF
    2SJ261 Sanyo Semiconductor Ultra High Speed Switching MOSFET Scan PDF
    2SJ261 Sanyo Semiconductor Scan PDF
    2SJ261 Sanyo Semiconductor Large Signal Power MOSFET Scan PDF
    2SJ262 Sanyo Semiconductor Ultra High Speed Switching MOSFET Scan PDF
    2SJ262 Sanyo Semiconductor Large Signal Power MOSFET Scan PDF
    2SJ263 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    2SJ263 Sanyo Semiconductor TO-220ML, TO-220MF Type Transistors Scan PDF
    2SJ263 Sanyo Semiconductor Ultra High Speed Switching MOSFETS Scan PDF
    2SJ263 Sanyo Semiconductor Large Signal Power MOSFET Scan PDF
    2SJ264 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    2SJ264 Unknown Scan PDF
    2SJ264 Sanyo Semiconductor Ultra High Speed Switching MOSFETS Scan PDF
    2SJ264 Sanyo Semiconductor Large Signal Power MOSFET Scan PDF
    2SJ265 Sanyo Semiconductor P-Channel Silicon MOSFET Ultrahigh-Speed Switching Original PDF
    2SJ265 Unknown Scan PDF
    2SJ265 Sanyo Semiconductor TO-220ML, TO-220MF Type Transistors Scan PDF
    2SJ265 Sanyo Semiconductor Ultra High Speed Switching MOSFETS Scan PDF
    2SJ265 Sanyo Semiconductor Large Signal Power MOSFET Scan PDF

    2SJ26 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EN4746

    Abstract: 2SJ264
    Text: Ordering number:EN4746 P-Channel Silicon MOSFET 2SJ264 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating easy mounting. unit:mm 2063A


    Original     		PDF EN4746 2SJ264 2SJ264] O-220ML EN4746 2SJ264

    2SJ266

    Abstract: ITR00258 ITR00259 ITR00260 ITR00261 ITR00262 IT00265
    Text: 注文コード No.N 4 2 3 6 2SJ266 No. 4 2 3 6 三洋半導体ニューズ 52099 新 2SJ266 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。


    Original     		PDF 2SJ266 IT00264 IT00265 ITR00262 IT00266 IT00267 2SJ266 ITR00258 ITR00259 ITR00260 ITR00261 ITR00262 IT00265

    2SJ263

    Abstract: ITR00228 ITR00229 ITR00230 ITR00231
    Text: 注文コード No.N 4 2 3 4 2SJ263 三洋半導体ニューズ No. 4 2 3 4 52099 新 2SJ263 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。


    Original     		PDF 2SJ263 --30V --10V ITR00234 ITR00235 ITR00236 ITR00237 2SJ263 ITR00228 ITR00229 ITR00230 ITR00231

    EN4234

    Abstract: 2SJ263
    Text: Ordering number:EN4234 P-Channel Silicon MOSFET 2SJ263 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ263]


    Original     		PDF EN4234 2SJ263 2SJ263] O-220ML EN4234 2SJ263

    2SJ265

    Abstract: No abstract text available
    Text: Ordering number:EN4235 P-Channel Silicon MOSFET 2SJ265 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ265]


    Original     		PDF EN4235 2SJ265 2SJ265] O-220ML 2SJ265

    bx 18A

    Abstract: 2SJ268 ITR00278 ITR00279 ITR00280 ITR00281 ITR00282
    Text: 注文コード No.N 4 2 3 7 2SJ268 No. 4 2 3 7 三洋半導体ニューズ 61599 新 2SJ268 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。


    Original     		PDF 2SJ268 IT00284 --30V --10V ITR00282 IT00285 IT00286 IT00287 bx 18A 2SJ268 ITR00278 ITR00279 ITR00280 ITR00281 ITR00282

    2SJ265

    Abstract: ITR00248 ITR00249 ITR00250 ITR00251
    Text: 注文コード No.N 4 2 3 5 2SJ265 No. 4 2 3 5 52099 新 2SJ265 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。 ・マイカレスパッケージで取り付け作業性が良い。


    Original     		PDF 2SJ265 --30V --10V ITR00254 ITR00255 ITR00256 ITR00257 2SJ265 ITR00248 ITR00249 ITR00250 ITR00251

    2SJ268

    Abstract: No abstract text available
    Text: Ordering number:EN4237 P-Channel Silicon MOSFET 2SJ268 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SJ268] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.


    Original     		PDF EN4237 2SJ268 2SJ268] 2SJ268-applied 2SJ268

    2SJ266

    Abstract: No abstract text available
    Text: Ordering number:EN4236 P-Channel Silicon MOSFET 2SJ266 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SJ266] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.


    Original     		PDF EN4236 2SJ266 2SJ266] 2SJ266-applied 2SJ266

    2SJ267

    Abstract: ITR00268 ITR00269 ITR00270 ITR00271 ITR00272
    Text: 注文コード No.N 4 7 4 7 2SJ267 No. 4 7 4 7 三洋半導体ニューズ 61599 新 2SJ267 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。


    Original     		PDF 2SJ267 --10V --30V ITR00274 ITR00275 ITR00276 ITR00277 2SJ267 ITR00268 ITR00269 ITR00270 ITR00271 ITR00272

    2SJ264

    Abstract: ITR00238 ITR00239 ITR00240 ITR00241 2SJ26
    Text: 注文コード No.N 4 7 4 6 2SJ264 No. 4 7 4 6 52099 新 2SJ264 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。 ・マイカレスパッケージで取り付け作業性が良い。


    Original     		PDF 2SJ264 --10V --30V ITR00244 ITR00245 ITR00246 ITR00247 2SJ264 ITR00238 ITR00239 ITR00240 ITR00241 2SJ26

    2sj28

    Abstract: 2SJ72 2sj26 2SJ83 2SJ99 2SJ96 2SJ18 2SJ82 2SJ90 2SJ73
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) Pd/Pch Tj/Tch min UP07 2N5465 2SJ10 2SJ11 2SJ12 2SJ13 2SJ15 2SJ16 2SJ17 2SJ18 2SJ19 2SJ20 2SJ21 2SJ22 2SJ26 2SJ27 2SJ28 2SJ29 2SJ32 2SJ33 2SJ39 2SJ40


    Original     		PDF 2N5465 2SJ10 2SJ11 2SJ12 2SJ13 2SJ15 2SJ16 2SJ17 2SJ18 2SJ19 2sj28 2SJ72 2sj26 2SJ83 2SJ99 2SJ96 2SJ18 2SJ82 2SJ90 2SJ73

    EN4234

    Abstract: 2SJ263
    Text: Ordering number:EN4234 P-Channel Silicon MOSFET 2SJ263 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ263]


    Original     		PDF EN4234 2SJ263 2SJ263] O-220ML EN4234 2SJ263

    EN4235

    Abstract: 2SJ265
    Text: Ordering number:EN4235 P-Channel Silicon MOSFET 2SJ265 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ265]


    Original     		PDF EN4235 2SJ265 2SJ265] O-220ML EN4235 2SJ265

    2SJ263

    Abstract: EN4234
    Text: Ordering num ber:E N 4 2 3 4 _ 2SJ263 P-Channel MOS Silicon FET No.4234 Very High-Speed Switching Applications i Features •Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Micaless package facilitating mounting. Absolute Maximum Ratings atTa = 25°C


    OCR Scan     		PDF EN4234 2SJ263 10/ws, 2SJ263 EN4234

    2SJ267

    Abstract: No abstract text available
    Text: Ordering number: EN4747 _ 2SJ267 N o .4747 P-C hannel M OS S ilicon FET SAXYO i Very High-Speed Switching Applications F e a tu r e s •Low ON resista n ce. - V ery high-sp eed sw itch in g. • L ow -voltage drive. - Surface m ount type d evice m aking the follow ing possible


    OCR Scan     		PDF EN4747 2SJ267 2SJ267-applied 10//s,

    2SJ261

    Abstract: SC46 T0220AB
    Text: - KNo. N *5271 N o . % 5271 SAN YO 90795 2SJ261 P^-V *;H V IO SJfi'> ' □ h V > i > X9 ü£¡6 ttf t v ^ y # . •m t m su. Absolute Maximum Ratings / Ta = 25°C K 1- " { 'y - 'J —XfiïJIÎ Vugs y -h -y -x E Kl" f DC) K V 'i y ^ M (^.Jl/X) VGSS ID


    OCR Scan     		PDF 2SJ261 100mA 2052C T0220AB T370-05 90795YK 2SJ261 SC46

    L177 E

    Abstract: 2SJ264 4746 diode
    Text: — Ordering number: EN 4746 '•»' 2SJ264 No.4746 P-Channel MOS Silicon FET SAWOi Very High-Speed Switching Applications Features ■Low ON resistance. • Very high-speed switching. ■Low-voltage drive. • Micaless package facilitating easy mounting.


    OCR Scan     		PDF EN4746 2SJ264 L177 E 2SJ264 4746 diode

    2SJ268

    Abstract: No abstract text available
    Text: 2SJ268 2093 2090 LD L o w D rive Series VDss = 60V P Channel Power MOSFET 4237 Features • Low ON resistance. - Very high-speed switching. • Low-voltage drive. - Surface mount type device making the following possible. - Reduction in the number of manufacturing processes for 2SJ268-applied equipment.


    OCR Scan     		PDF 2SJ268 2SJ268-applied PWS10//s, 2SJ268

    Untitled

    Abstract: No abstract text available
    Text: 2SJ268 2093 2090 LD L o w D riv e S e rie s V dss = 60V P Channel Power MOSFET £4237 F e a tu re s • Low ON resistance. • V ery high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SJ268-applied equipm ent.


    OCR Scan     		PDF 2SJ268 2SJ268-applied --20V

    Untitled

    Abstract: No abstract text available
    Text: 2SJ265 LD L o w D rive S eries VDSs = 6 0 V 2063 P Channel Power M OSFET i_ £•4235 F e a tu re s ■Low ON resistance. ■Very high-speed switching. • Low-voltage drive. ■M icaless package facilitating m ounting. b s o lu te M ax im u m R a tin g s a t Ta = 25°C


    OCR Scan     		PDF 2SJ265 42893TH AX-8376

    4235

    Abstract: 2SJ265
    Text: O rd e rin g n u m b e r: EN 4 2 3 § -, 2SJ265 No.4235 P-Channel MOS Silicon FET Very High-Speed Switching Applications F eatures - Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Micaless package facilitating mounting. A bsolute M axim um R atings at Ta = 25°C


    OCR Scan     		PDF 2SJ265 4235 2SJ265

    2sj26

    Abstract: No abstract text available
    Text: 2SJ266 2093 2090 L D { L o w D rive S e r ie s V DSs=z 6 0 V P Channel Power M OSFET f 4236 F e a tu re s • Low ON resistance. - Very high-speed switching. - Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SJ266-applied equipm ent.


    OCR Scan     		PDF 2SJ266 2SJ266-applied --20V 2sj26

    Untitled

    Abstract: No abstract text available
    Text: 2SJ263 LD L o w D rive S eries V Dss:= 6 0 V 2063 P Channel Power M OSFET .£•4234 F e a tu re s ■Low ON resistance. ■Very high-speed switching. ■Low-voltage drive. • M icaless package facilitating m ounting. A b so lu te M ax im u m R a tin g s a t Ta = 25°C


    OCR Scan     		PDF 2SJ263 42893TH AX-8376