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    2SJ19 Search Results

    2SJ19 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SJ196-T-AZ Renesas Electronics Corporation Pch Mosfet For Switching Visit Renesas Electronics Corporation
    2SJ197(0)-T1-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SJ197-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SJ197-T1-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SJ199-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
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    2SJ19 Price and Stock

    Rochester Electronics LLC 2SJ199(0)-T1-AZ

    P-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SJ199(0)-T1-AZ Bulk 14,000 378
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    Rochester Electronics LLC 2SJ196-T-AZ

    P-CHANNEL SMALL SIGNAL MOSFET
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    DigiKey 2SJ196-T-AZ Bulk 5,502 773
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    Rochester Electronics LLC 2SJ195-TL-E

    PCH 4V DRIVE SERIES
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    DigiKey 2SJ195-TL-E Bulk 2,100 365
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    Rochester Electronics LLC 2SJ199-T2-AZ

    P-CHANNEL POWER MOSFET
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    DigiKey 2SJ199-T2-AZ Bulk
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    Renesas Electronics Corporation 2SJ197(0)-T1-AZ

    Power MOSFET, P Channel, 60 V, 1.5 A, 1 Ohm, SC-62, 3 Pins, Surface Mount - Bulk (Alt: 2SJ197(0)-T1-AZ)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2SJ197(0)-T1-AZ Bulk 4 Weeks 628
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    Rochester Electronics 2SJ197(0)-T1-AZ 18,000 1
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    Find more 2SJ19 price and stock on Findchips.com

    2SJ19 Datasheets (87)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ19 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ19 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SJ19 Unknown FET Data Book Scan PDF
    2SJ190 Sanyo Semiconductor Ultrahigh-speed switching Original PDF
    2SJ190 Unknown FET Data Book Scan PDF
    2SJ190 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ190 Sanyo Semiconductor Power Mosfets / Transistors Scan PDF
    2SJ190 Sanyo Semiconductor PCP Type Transistors, XP5 / XP6 Type Transistors Scan PDF
    2SJ191 Sanyo Semiconductor Ultrahigh-speed switching Original PDF
    2SJ191 Unknown FET Data Book Scan PDF
    2SJ191 Unknown P-Channel Power MOSFET Scan PDF
    2SJ191 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ191 Sanyo Semiconductor TP Type / MP Type Transistors Scan PDF
    2SJ191 Sanyo Semiconductor Ultra High Speed Switching MOSFET Scan PDF
    2SJ191FA Unknown P-Channel Power MOSFET Scan PDF
    2sj192 Sanyo Semiconductor P-channel MOS silicon FET, very high-speed switching application Original PDF
    2SJ192 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    2SJ192 Unknown FET Data Book Scan PDF
    2SJ192 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ192 Unknown Catalog Scans - Shortform Datasheet Scan PDF

    2SJ19 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SJ192

    Abstract: EN3765
    Text: Ordering number:EN3765 P-Channel Silicon MOSFET 2SJ192 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ192] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5


    Original     		PDF EN3765 2SJ192 2083B 2SJ192] 2092B 2SJ192 EN3765

    2SJ190

    Abstract: No abstract text available
    Text: Ordering number:EN3763 P-Channel Silicon MOSFET 2SJ190 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ190] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5 3


    Original     		PDF EN3763 2SJ190 2SJ190] 25max 2SJ190

    87541

    Abstract: 2SJ190 2062a ITR00029 ITR00030 ITR00032 ITR00033 ITR01031
    Text: 注文コード No.N 3 7 6 3 2SJ190 No. 3 7 6 3 51899 新 2SJ190 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


    Original     		PDF 2SJ190 250mm2 500mA 500mA, ITR00036 ITR00035 --30V --10V 87541 2SJ190 2062a ITR00029 ITR00030 ITR00032 ITR00033 ITR01031

    2SJ194

    Abstract: ITR00067 ITR00068
    Text: 注文コード No.N 3 7 6 7 A 2SJ194 No. 3 7 6 7 A 51899 半導体ニューズ No.3767 とさしかえてください。 2SJ194 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。


    Original     		PDF 2SJ194 ITR00072 --50V --10V ITR00071 ITR00074 ITR00075 2SJ194 ITR00067 ITR00068

    2SJ191

    Abstract: ITR00039 ITR00040
    Text: 注文コード No.N 3 7 6 4 A 2SJ191 No. 3 7 6 4 A 51899 半導体ニューズ No.3764 とさしかえてください。 2SJ191 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。


    Original     		PDF 2SJ191 ITR00043 --30V --10V IT00046 IT00047 2SJ191 ITR00039 ITR00040

    2SJ195

    Abstract: EN3768 37684
    Text: Ordering number:EN3768A P-Channel Silicon MOSFET 2SJ195 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ195] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5


    Original     		PDF EN3768A 2SJ195 2083B 2SJ195] 2092B 2SJ195 EN3768 37684

    2SJ192

    Abstract: No abstract text available
    Text: Ordering number:EN3765 P-Channel Silicon MOSFET 2SJ192 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ192] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5


    Original     		PDF EN3765 2SJ192 2083B 2SJ192] 2092B 2SJ192

    2SJ191

    Abstract: No abstract text available
    Text: Ordering number:EN3764A P-Channel Silicon MOSFET 2SJ191 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ191] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5


    Original     		PDF EN3764A 2SJ191 2083B 2SJ191] 2092B 2SJ191

    MARKING PB SmD TRANSISTOR SOT-89

    Abstract: marking PB 2SJ197 transistor smd .PB PB SmD TRANSISTOR SOT-89
    Text: MOSFET SMD Type MOS Fied Effect Transistor 2SJ197 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 Features +0.1 2.50-0.1 Directly driven by Ics having a 5V poer supply. Has low on-state resistance 1 MAX.@VGS=-4.0V,ID=-0.5A 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 MAX.@VGS=-10V,ID=-0.5A


    Original     		PDF 2SJ197 OT-89 MARKING PB SmD TRANSISTOR SOT-89 marking PB 2SJ197 transistor smd .PB PB SmD TRANSISTOR SOT-89

    2SJ195

    Abstract: No abstract text available
    Text: 2SJ195 2083a 2092 A LD L o w D rive S eries V DSS = 1 0 0 V P Channel Power M OSFET 1)3768 F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage


    OCR Scan     		PDF 2SJ195 2083a 42693TH 2SJ195

    J196

    Abstract: L0836 40t60 2sj196 DF RV transistor 2SK1482
    Text: Mos M O S Field Effect Transistor 2 P 2SJ196 l i P f t ? ' / « izx v -f- > / * MOS FET Ü t &tznb, , y ^ / 1 9 6 9w m m m i f t t » < , x 4 y f- > 'j J MOS F E T MOS FET Z", 5 V'tiJJtiU C ò S &i # a r v* 5.2 MAX -f H jj S T " ì ~ o Œ i t o 5v i c fr b m m m T é t t o


    OCR Scan     		PDF 2SJ196 2SJ196 2SK1482 IEI-620) J196 L0836 40t60 DF RV transistor

    2SJ191

    Abstract: No abstract text available
    Text: 2SJ191 2083A LD L o w D rive Series V Dss = 6 0 V 2092A P Channel Power MOSFET 3764A Features • Low ON resistance •Very high-speed switching • Low-voltage drive Absolute Maximum Ratings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage


    OCR Scan     		PDF 2SJ191 10/js, 2SJ191

    2SJ197

    Abstract: No abstract text available
    Text: •7s— S • 5 / — h- NEC ^ MOS M O S Field E ffe c t T ran sis to r 2SJ197 MOS F E T 2SJ197 l i , P f t * V W & MOS F E T T", 5 & ± \ \ z i IC CO ^ - {È • mm) y f- > z i i t - t o h ^ MOS F E T Ü 5}- > m iifr 'i& < , x ^ y f > ^"#14 & i à t l X


    OCR Scan     		PDF 2SJ197 2SJ197 O2SK1483

    Untitled

    Abstract: No abstract text available
    Text: DATA SH EET NEC / MOS FIELD EFFECT TRANSISTOR 2 S J 1 9 7 P-CH A N N EL MOS FET FOR SW ITCH IN G T h e 2SJ197, P-channei vertical ty p e M OS FE T, is a sw itching P A C K AG E D IM E N S IO N S U n it : m m device w h ich can be driven d ire c tly b y th e o u tp u t o f ICs having a 5


    OCR Scan     		PDF 2SJ197 2SJ197, K1483 1R30-00 S60-00

    2SJ193

    Abstract: 41293TH 37662
    Text: Ordering number: EN3766 _ 2SJ193 N o.3766 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s •Low ON resistance. • Very high-speed switching. ■Low-voltage drive. A b s o lu te M ax im u m R a tin g s at T a=25°C


    OCR Scan     		PDF EN3766 2SJ193 250mm2 41293TH 37662

    2SJ26

    Abstract: No abstract text available
    Text: VDSS = 60V, P-channel Absolute maximum ratings at Ta = 25°C Type No. Package VDSS W 2SJ285 Voss V CP 2SJ190 •o (A) Po' W 0.25 0.25* ^GS(off) min to max (V) 1.0 PCP ^DS (on) RoS(on) typ/maxat Vß$-4V (ii) typ/maxat VGS = 10V 3.0/4.0 2.2/3.0 0.35 45 1.2/1.6


    OCR Scan     		PDF 2SJ285 2SJ190 2SJ288 2SJ191 2SJ192 2SJ362 2SJ414 O-220 O-220ML 2SJ26

    2SJ190

    Abstract: 2SJ19
    Text: 2SJ190 4fr 2062 L D L o w D riv e S e rie s V o ss” 6 0 V P Channel P o w er M O S F E T •£■3763 F e a tu re s • Low ON resistance ■Very high-speed switching ■Low-voltage drive A bsolute M axim um R atin g s a t Ta = 25°C Drain to Source Voltage


    OCR Scan     		PDF 2SJ190 --60V, --10V, 500mA 500mA, ----20V N1292MH A8-7541 2SJ190 2SJ19

    Untitled

    Abstract: No abstract text available
    Text: 2SJ194 _ 2 0 9 2 A_ ^ LD L o w D riv e S e rie s V d s s = 1 0 0 V P Channel Power M OSFET 13767 F eatures - Low ON resistance. •Very high-speed switching. • Low-voltage drive. isolute M axim um R atings at Ta = 25°C Drain to Source Voltage


    OCR Scan     		PDF 2SJ194 41293TH

    diode sy 710

    Abstract: sy 710 diode 2SJ192
    Text: 2SJ192 2083A 2092A LD L o w D riv e S e rie s V qSs = 6 0 V P Channel Power MOSFET 3765 Features • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M aximum R atings at Ta = 25°C Drain to Source Voltage VDSS Gate to Source Voltage


    OCR Scan     		PDF 2SJ192 diode sy 710 sy 710 diode 2SJ192

    transistor sje 360

    Abstract: wn 537 a transistor TC-7687B wn 537 a fet wn 537 transistor sje 2762 2SJ199 2SK1485 transistor W1B 08
    Text: ^ — S? • 5 / — h N E C ^r MOS M O S Field E ffe c t T ra n s is to r 2SJ199 P M O S FET 2SJ199 i±, P f t T ' lisWkZ- MOS F E T T\ 5 V m S * IC t t i J j t z J : 6 ¡ £ & m m t* r f ó i r z ' f • y - f- y CO K M T O M : mm T 't o * MOS F E T iJ ?r >ffiÎÆ^IS <, X 4 -y f -> ?'=ft1Ì è ffix T


    OCR Scan     		PDF 2SJ199 2SJ199 2SK1485 transistor sje 360 wn 537 a transistor TC-7687B wn 537 a fet wn 537 transistor sje 2762 transistor W1B 08

    2SJ199

    Abstract: 2SK1485
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2 S J 1 9 9 P-CHANIMEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit : mm 1.5 ± 0 . 1 3— The 2SJ199, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5


    OCR Scan     		PDF 2SJ199 2SJ199, 2SK1485 2SJ199

    2SJ270

    Abstract: 2SJ26
    Text: VDSS = 100V, P-channel Absolute maximum ratings atTa = 25°C Type No. Pactage VDSS m 2SJ286 VGSS •o W A CP 0.15 2SJ193 2SJ289 PCP SNIP NMP ±20 100 ±15 2.0 20 4.0 30 (£1) 6.5/9.0 2.4/3.5 Ciss typ typ (S) (pF) 5.0/7.0 0.27 45 1.8/2.4 1.0 160 6.5/9.0 5.0/7.0


    OCR Scan     		PDF 2SJ286 2SJ193 2SJ289 2SJ194 2SJ195 2SJ275 2SJ276 2SJ27716 2SJ270 2SJ26

    2SK1482

    Abstract: 2sj196 SS-220 10v
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD-EFFECT TRANSISTOR 2SJ196 P-CHANNEL MOS FET FOR SWITCHING OUTLINE DIMENSIONS Unit : mm


    OCR Scan     		PDF 2SJ196 2SJ196 2SK1482 SS-220 10v

    EN3767

    Abstract: 2SJ194
    Text: Ordering number:EN37 67 _ 2SJ194 No.3767 P-Channel MOS Silicon FET Very High-Speed Switching Applications Featu res •Low ON resistance. •Very high-speed switching. •Low-voltage drive. i solute Maximum R atings at Ta —25°C Drain to Source Voltage


    OCR Scan     		PDF EN3767 2SJ194 100juA -100V EN3767