2SD867 POWER TRANSISTOR Search Results

2SD867 POWER TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

2SD867 POWER TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Motorola case 77 Abstract: 2N3055 BU108 2sc15 bdw93c applications BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 25 Vdc (Min) @ IC = 10 mAdc	Original	MJE200* MJE210* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C Motorola case 77 2N3055 BU108 2sc15 bdw93c applications BU326 BU100	PDF
automotive ignition tip162 Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —	Original	BU323AP BU323AP TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C automotive ignition tip162 bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000	PDF
2SC124 Abstract: 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS	Original	2N5191, 2N5192 2N5194 2N5195* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 2SC124 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100	PDF
c 3421 transistor Abstract: BU108 transistor equivalent of BU406 equivalent transistor 2n3055 bu126 motorola 2SD165 bc 574 transistor D 1163 A BU208A 2N4906 MOTOROLA Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Horizontal Deflection Transistor . . . designed for use in televisions. • • • • Collector–Emitter Voltages VCES 1500 Volts Fast Switching — 400 ns Typical Fall Time Low Thermal Resistance 1_C/W Increased Reliability	Original	BU208A TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 c 3421 transistor BU108 transistor equivalent of BU406 equivalent transistor 2n3055 bu126 motorola 2SD165 bc 574 transistor D 1163 A BU208A 2N4906 MOTOROLA	PDF
MJ15003 300 watts amplifier Abstract: ST T4 3580 MJD340 ST mje34 2sd478 D45H8 EQUIVALENT BUX98A SE9302 MJE2482 2SC1419 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN High Voltage Power Transistors MJD340* PNP MJD350* Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. *Motorola Preferred Device DPAK For Surface Mount Applications	Original	MJE340 MJE350 MJD340* MJD350* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A MJ15003 300 watts amplifier ST T4 3580 MJD340 ST mje34 2sd478 D45H8 EQUIVALENT BUX98A SE9302 MJE2482 2SC1419	PDF
D72F5T2 NPN Abstract: silicon npn 2SD716 transistor BD4202 bd139 3v BU108 2N5978 NPN pin configuration NPN transistor tip41c 724 motorola NPN Transistor with heat pad MJE15029 audio output TRANSISTOR PNP 2SB686 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJE15028* MJE15030* PNP MJE15029* MJE15031* Complementary Silicon Plastic Power Transistors . . . designed for use as high–frequency drivers in audio amplifiers. • DC Current Gain Specified to 4.0 Amperes hFE = 40 Min @ IC = 3.0 Adc	Original	MJE15028, MJE15029 MJE15030, MJE15031 220AB MJE15028* MJE15030* MJE15029* MJE15031* TIP73B D72F5T2 NPN silicon npn 2SD716 transistor BD4202 bd139 3v BU108 2N5978 NPN pin configuration NPN transistor tip41c 724 motorola NPN Transistor with heat pad audio output TRANSISTOR PNP 2SB686	PDF
pin configuration NPN transistor tip41c Abstract: TIP41C EQUIVALENT TRANSISTOR tip41c pin configuration pin configuration NPN transistor tip42c TIP42C EQUIVALENT BU108 All similar transistor 2sa715 2SA699 TIP41A semiconductors TIP42A equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP41A TIP41B* TIP41C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. PNP • Collector–Emitter Saturation Voltage — VCE sat = 1.5 Vdc (Max) @ IC = 6.0 Adc	Original	TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C TIP41A TIP41B* TIP41C* pin configuration NPN transistor tip41c TIP41C EQUIVALENT TRANSISTOR tip41c pin configuration pin configuration NPN transistor tip42c TIP42C EQUIVALENT BU108 All similar transistor 2sa715 2SA699 TIP41A semiconductors TIP42A equivalent	PDF
IR3001 Abstract: pin configuration NPN transistor BD679 724 motorola NPN Transistor with heat pad similar ic BA 3812 PMD16K40 TRANSISTOR BC 545 2Sd331 npn transistor BU108 BD130 TO126 pin configuration NPN transistor tip41c Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJF15030 PNP MJF15031 Complementary Power Transistors For Isolated Package Applications Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink	Original	MJF15030 MJF15031 MJE15030 MJE15031 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 IR3001 pin configuration NPN transistor BD679 724 motorola NPN Transistor with heat pad similar ic BA 3812 PMD16K40 TRANSISTOR BC 545 2Sd331 npn transistor BU108 BD130 TO126 pin configuration NPN transistor tip41c	PDF
MJ-12003 Abstract: TIP32C 329 BU108 BD679 2N6285 equivalent bd139 equivalent 2SA49 PRF 374 MOTOROLA ST BDX53C BD602 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP31A TIP31B* TIP31C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. PNP • Collector–Emitter Saturation Voltage — VCE sat = 1.2 Vdc (Max) @ IC = 3.0 Adc	Original	TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C TIP31A TIP31B* TIP31C* MJ-12003 TIP32C 329 BU108 BD679 2N6285 equivalent bd139 equivalent 2SA49 PRF 374 MOTOROLA ST BDX53C BD602	PDF
transistor 3569 Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —	Original	Bandwi32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 transistor 3569 t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033	PDF
2SA1046 Abstract: BU108 TRANSISTOR BC 239 c BU326 BU100 mje15033 replacement Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low–speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS	Original	2N6387 2N6388 2N6387, 220AB 2N6388* TIP73B TIP74 TIP74A 2SA1046 BU108 TRANSISTOR BC 239 c BU326 BU100 mje15033 replacement	PDF
BU108 Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A	Original	BUV20 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC194 transistor Bc 574 2SC1419 BU326 BU100	PDF
TIP35C transistor replacement Abstract: TIP35C replacement 2N3055 equivalent BU108 D45H11 equivalent replacement BDX54 2n3772 EQUIVALENT BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP35A TIP35B* TIP35C* PNP TIP36A TIP36B* TIP36C* Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • • • • 25 A Collector Current Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V	Original	TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N6490 TIP35C transistor replacement TIP35C replacement 2N3055 equivalent BU108 D45H11 equivalent replacement BDX54 2n3772 EQUIVALENT BU326 BU100	PDF
BU108 Abstract: ir411 transistor BC 247 2N592 MJE2482 2SD675 2SC1419 BU326 BU100 BUV22 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV22 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 20 at IC = 10 A	Original	BUV22 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 ir411 transistor BC 247 2N592 MJE2482 2SD675 2SC1419 BU326 BU100 BUV22 equivalent	PDF

2sa1046 Abstract: 2SD436 BD133 BD878 2SC1013 2SC1943 BD419 2SC1014 IR425 2sc2168 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDX33B BDX33C* Darlington Complementary Silicon Power Transistors PNP BDX34B BDX34C* . . . designed for general purpose and low speed switching applications. • High DC Current Gain — hFE = 2500 typ. at IC = 4.0	Original	BDX33B, BDX33C, 33C/34B, 220AB BDX33B BDX33C* BDX34B BDX34C* TIP73B 2sa1046 2SD436 BD133 BD878 2SC1013 2SC1943 BD419 2SC1014 IR425 2sc2168	PDF
BU108 Abstract: 2SA1046 2SC7 BD129 mje13003 equivalent BU323A equivalent BU326 BU100 bd237 equivalent TIP32C equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40 – 60 – 80 VOLTS 200 WATTS • High Collector–Emitter Sustaining Voltage —	Original	2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5745 2N5301 2N5302 BU108 2SA1046 2SC7 BD129 mje13003 equivalent BU323A equivalent BU326 BU100 bd237 equivalent TIP32C equivalent	PDF
BD139 Abstract: BU108 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N6055 2N6056* Darlington Complementary Silicon Power Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low frequency switching applications. DARLINGTON 8 AMPERE COMPLEMENTARY	Original	2N6055 2N6056 2N6056* TIP73B TIP74 TIP74A TIP74B TIP75 BD139 BU108 BU326 BU100	PDF
BU108 Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS	Original	2N5877 2N5878 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801	PDF
2SC1419 Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.	Original	MJE350 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2SC1419 TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108	PDF
2N5037 Abstract: 2SC1903 2SC2159 mje15033 replacement bd7782 MJE2050 SDT7605 2SA835 BD279 svt6251 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP Transistor *Motorola Preferred Device 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS . . . designed for use in high power audio amplifiers utilizing complementary or quasi	Original	BD808 BD810* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N5037 2SC1903 2SC2159 mje15033 replacement bd7782 MJE2050 SDT7605 2SA835 BD279 svt6251	PDF
transistor MJ2501 Abstract: BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ413 MJ423 High-Voltage NPN Silicon Transistors 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc	Original	MJ413 MJ423 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C transistor MJ2501 BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100	PDF
Transistor 2SA 2SB 2SC 2SD Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346 Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)	OCR Scan	O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346	PDF
DE-A1D Abstract: 2SD867 power transistor N317 regulator power ic ta7089p TA7089P N317 TRANSISTOR n317 data 2SD867 TA7089 catalog ci toshiba Text: TOSHXBAt TA7089P ELECTRONICCra 7EM7 0 0 1^3 7^ b T '5 5 - U - 2 3 BIPOLAR LIN EAR INTEGRATED CIRCUIT SILICON MONOLITHIC GENERAL PURPOSE VOLTAGE REGULATOR. Unit in mm . Low Output Impedance : ZD =40mil Typ. 14 13 12 li 10 rjn ri-i Hi . High Ripple Rejection : RR=48dB(Typ.)	OCR Scan	7089P D0n371 40mil 200mA TA7089P TA7089P 0C17347 12VDC DE-A1D 2SD867 power transistor N317 regulator power ic ta7089p N317 TRANSISTOR n317 data 2SD867 TA7089 catalog ci toshiba	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA-. E L E C T R O N I C 02 TA7089P DE \| ^ 7 2 4 7 D O I W T t. T'58'U - 2 3 BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC GENERAL PURPOSE VOLTAGE REGULATOR. Unit in imn . Low Output Impedance : ZD =40mil Typ. 14 1 3 12 . High Ripple Rejection : RR=48dB(Typ.)	OCR Scan	TA7089P 40mil 200mA TA7089P 504mW. T-5S-11	PDF

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2SD867 POWER TRANSISTOR Search Results

2SD867 POWER TRANSISTOR Result Highlights (5)

2SD867 POWER TRANSISTOR Datasheets Context Search

Motorola case 77

automotive ignition tip162

2SC124

c 3421 transistor

MJ15003 300 watts amplifier

D72F5T2 NPN

pin configuration NPN transistor tip41c

IR3001

MJ-12003

transistor 3569

2SA1046

BU108

TIP35C transistor replacement

BU108

2sa1046

BU108

BD139

BU108

2SC1419

2N5037

transistor MJ2501

Transistor 2SA 2SB 2SC 2SD

DE-A1D

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