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    2SD1767 Search Results

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    2SD1767 Price and Stock

    ROHM Semiconductor 2SD1767T100R

    TRANS NPN 80V 0.7A MPT3
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    DigiKey 2SD1767T100R Cut Tape 2,148 1
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    2SD1767T100R Reel 2,000 1,000
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    Bristol Electronics 2SD1767T100R 2,000 12
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    Quest Components 2SD1767T100R 128,887
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    2SD1767T100R 1,600
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    Avnet Silica 2SD1767T100R 11 Weeks 1,000
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    ROHM Semiconductor 2SD1767T100Q

    TRANS NPN 80V 0.7A MPT3
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    DigiKey 2SD1767T100Q Cut Tape 1,000 1
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    2SD1767T100Q Digi-Reel 1,000 1
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    2SD1767T100Q Cut Tape 147 1
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    Mouser Electronics 2SD1767T100Q 86
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    ComSIT USA 2SD1767T100Q 10,000
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    ROHM Semiconductor 2SD1767

    SMALL SIGNAL BIPOLAR TRANSISTOR
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    Quest Components 2SD1767 792
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    Others 2SD1767T100R

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    ComSIT USA 2SD1767T100R 66,078
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    2SD1767 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1767 Kexin Medium Power Transistor Original PDF
    2SD1767 ROHM Medium power transistor Original PDF
    2SD1767 TY Semiconductor Medium Power Transistor - SOT-89 Original PDF
    2SD1767 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1767 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1767 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1767 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1767 ROHM Transistor Selection Guide Scan PDF
    2SD1767 ROHM SOT-23, SOT-89 and D-Pak Transistors Scan PDF
    2SD1767 Toshiba MEDIUM POWER TRANSISTOR(-80V -0.7A) Scan PDF
    2SD1767T100P ROHM Medium Power Transistor (80 V, 0.7 A) Original PDF
    2SD1767T100Q ROHM Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 80V 0.7A SOT-89 Original PDF
    2SD1767T100Q ROHM Medium Power Transistor (80 V, 0.7 A) Original PDF
    2SD1767T100R ROHM Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 80V 0.7A SOT-89 Original PDF
    2SD1767T100R ROHM Medium Power Transistor (80 V, 0.7 A) Original PDF

    2SD1767 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    marking BDR

    Abstract: 2SB1189 2SD1767 Transistor 2SD1767 MARKING 82
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1189 TRANSISTOR PNP FEATURES z High breakdown voltage z Complements to 2SD1767 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO


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    OT-89 2SB1189 2SD1767 -100mA -500mA -50mA -50mA 100MHz marking BDR 2SB1189 2SD1767 Transistor 2SD1767 MARKING 82 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1767 TRANSISTOR NPN 1. BASE FEATURES z High Breakdown Voltage and Current z Excellent DC Current Gain Linearity z Complement the 2SB1189 2. COLLECTOR


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    OT-89-3L OT-89-3L 2SD1767 2SB1189 100mA 500mA 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1189 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURES z High breakdown voltage z Complements to 2SD1767 2. COLLECTOR 1 2 3 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    OT-89-3L 2SB1189 OT-89-3L 2SD1767 -100mA -500mA -50mA -50mA 100MHz PDF

    2Sb1238

    Abstract: 2SB1189 2SD1767 2SD1859 T100 ic T100 bd marking code transistor ROHM
    Text: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5


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    2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 SC-62 2Sb1238 2SD1859 T100 ic T100 bd marking code transistor ROHM PDF

    BR 2032

    Abstract: transistor 702 2SD1767 702 RE
    Text: SPICE PARAMETER 2SD1767 by ROHM TR Div. * 2SD1767 NPN BJT model * Date: 2006/11/17 .MODEL 2SD1767 NPN + IS=150.00E-15 + BF=256.16 + VAF=15.861 + IKF=1.3147 + ISE=150.00E-15 + NE=1.3227 + BR=9.2084 + VAR=100 + IKR=.2032 + ISC=16.456E-12 + NC=1.3790 + NK=.77836


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    2SD1767 Q2SD1767 00E-15 456E-12 000E-3 062E-3 16E-12 114E-12 BR 2032 transistor 702 2SD1767 702 RE PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F 96-618-B13 (96-750-D13) 278


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    2SB1189 2SB1238 2SB899F 2SD1767 2SD1859 2SD1200F 96-618-B13) 96-750-D13) PDF

    transistor 2sb1238

    Abstract: 2sb1238
    Text: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5


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    2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 2SB1238 SC-62 transistor 2sb1238 PDF

    2SD1859

    Abstract: 2SB1189 2SB1238 2SD1767 T100 sc621
    Text: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO


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    2SD1767 2SD1859 2SB1189 2SB1238. 2SD1767 SC-62 2SD1859 2SB1238 T100 sc621 PDF

    2SD1859

    Abstract: No abstract text available
    Text: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO


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    2SD1767 2SD1859 2SB1189 2SB1238. 2SD1767 2SD1859 SC-62 PDF

    2SD1859

    Abstract: 2SD1767 2SB1189 2SB1238 T100
    Text: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO


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    2SD1767 2SD1859 2SB1189 2SB1238. 2SD1767 2SD1859 2SB1238 T100 PDF

    2SB1238

    Abstract: No abstract text available
    Text: Medium power transistor 80V, 0.7A 2SB1189 / 2SB1238 Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. Dimensions (Unit : mm) 2SB1189 4.0 1.5 0.4 1.0 Collector power dissipation


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    2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 2SB1238 SC-62 R1010A PDF

    2SB1189

    Abstract: 2SB1238 2SD1767 2SD1859 T100
    Text: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5


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    2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 SC-62 2SB1238 2SD1859 T100 PDF

    7A SMD

    Abstract: 2SD1767
    Text: Transistors SMD Type Medium Power Transistor 2SD1767 Features High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage


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    2SD1767 40X40X0 500mA -50mA, 100MHz 7A SMD 2SD1767 PDF

    2sd1767

    Abstract: 2SD1859
    Text: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO


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    2SD1767 2SD1859 2SB1189 2SB1238. 2SD1767 2SD1859 SC-62 PDF

    marking 07 sot89

    Abstract: No abstract text available
    Text: 2SB1189 SOT-89 Transistor PNP 1. BASE SOT-89 2. COLLECTOR 1 2 3. EMITTER 3 4.6 4.4 1.8 1.4 1.6 1.4 B 2.6 4.25 2.4 3.75 Features — — 0.8 MIN High breakdown voltage Complements to 2SD1767 0.44 0.37 Parameter B 0.53 0.48 0.40 2x) 0.35 1.5 3.0 Dimensions in inches and (millimeters)


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    2SB1189 OT-89 OT-89 2SD1767 -100mA -500mA -50mA 100MHz marking 07 sot89 PDF

    2SB1238

    Abstract: 2SB1189 2SD1767 2SD1859 T100
    Text: Medium power transistor 80V, 0.7A 2SB1189 / 2SB1238 Dimensions (Unit : mm) Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5 0.4 1.0 VCBO −80 Collector-emitter voltage


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    2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 2SB1238 2SD1859 T100 PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    ic 11105 h

    Abstract: No abstract text available
    Text: h 7 > V ^ ^/Transistors 2SD1767 2SD1767 T £ $ * V T \ r f \ s —yf& NPN Epitaxial Planar NPN Silicon Transistor fl£U5fc 2jiil§ffl/Low Freq. Power Amp. • feft 1) • W f^ jilS l/D im e n sio n s Unit : mm) P C = 2 W T * 5 (40X 40X0.7mm * 7 $ . y


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    2SD1767 40X40X0 SC-62 2SB1189. ic 11105 h PDF

    2SD1767

    Abstract: No abstract text available
    Text: 2SD1767 N ~7> V 7. £ /Transistors O O Q 4 I t f ^ d r v 7 7 ; u y u - ^ N # w f P N Epitaxial Planar NPN Silicon Transistor f i ^ j 5 S ^ l i ,H ffl/L o w Freq. Power Amp. • « * 1) = l U ? * j a £ , PC= 2 W T 'S - 5 40 X 4 0 X 0.7mm Hz 5 5 y ? S H 3 ifN i) o


    OCR Scan
    2SD1767 SC-62 2SD1767 PDF

    2SD1659

    Abstract: 2SB689F 2sb123b
    Text: 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F Transistors I Medium Power Transistor —80V, —0.7A 2 S B 1 189 / 2 S B 1 238 / 2 S B 8 8 9 F •F e a tu re s • A b s o lu t e m axim um ratings (T a = 2 5 'C ) 1 ) High breakdown voltage and high current. (—80V, - 0.7A)


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    2SB1189 2SB1238 2SB899F 2SD1767 2SD1859 2SD1200F --80V, 2SB123B 2SB689F -126FP 2SD1659 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD1767 / T ransistors c n i 7 6 7 y '; ^ > h 7 > y ^ 4 , ^ ;tHll,i ffl/M e d iu m Power Amp. Epitaxial Planar NPN Silicon Transistor npn Pc = 2 W T & -S 40X 4 0 X 0 .7 m m -b 7 5 2 isiMEE, 7 • T tiiG S /D im e n s io n s (U n it: mm) so- yi v; V Ui ~r


    OCR Scan
    2SD1767 2SB1189 2SB1189. PDF

    SS138

    Abstract: 2SB1189 2SB1238 2SB889F 2SB899F 2SD1767 2SD1859 2SB899
    Text: 2SB1189 12SB1238 / 2SB899F 2SD1767 / 2SD1859 12SD1200F T ra n sisto rs I M e d iu m P o w e r T r a n s is t o r — 80V, — 0.7A 2 S B 1 189 / 2S B 1238 / 2S B 889F • A b s o l u t e m a x im u m r a t in g * ( T a — 2 5 ^ ) • F * a tu r* * 1 > H i g h b r e a k d o w n v o t in g o . B V e c o


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    2SB1189 2SB1238 2SB899F 2SD1767 2SD1859 12SD1200F 2SB889F PSB1189 SS138 2SB889F 2SB899 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F Transistors Medium Power Transistor —80V, —0.7A I 2SB1189 / 2SB1238 / 2SB889F •Features •A b s o lu te maximum ratings ( T a ^ î S t ) 1 ) High breakdown voltage and high current. {—60V, —0.7A)


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    2SB1189 2SB1238 2SB899F 2SD1767 2SD1859 2SD1200F 2SB889F 2SD1767/2SD1859/2SD1200F. PDF

    2SD977

    Abstract: 2SD600K 2sc2233 2sc2373 2SD849 2SD1953 2SD763 ROHM 1004 nec 2sd560 2SD1162
    Text: 228 - s « « tt Manuf. Type No. 2SD 973 -s-virv fc' T 2SD 973A K T 2SD 974 B ÎL tt y 2SD 972 2SD H ï¥ SANYO JÜ ^ TOSHIBA Vy>TV 2SD 971 CD - 975> 2SD 976 g fr 2SD 976A B ÎL 2SD 977 E. & 2SD 978 H H & 2S0 979 2SD1190 a m NEC B ÎL H ITACH I 2SD1162 2SD 11 1 4 K


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    2SD971 2SD972 2SD973 2SD973A 2SD974 2SD560 2SD1162 2SD76800 2SD1190 2SD863 2SD977 2SD600K 2sc2233 2sc2373 2SD849 2SD1953 2SD763 ROHM 1004 nec 2sd560 2SD1162 PDF