2SB1105
Abstract: 2SD1605
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·High DC Current Gain: hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A) ·Complement to Type 2SD1605
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-120V
2SD1605
-30mA
-120V;
-100V;
2SB1105
2SD1605
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2SB1105
Abstract: 2SD1605
Text: JMnic Product Specification 2SB1105 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC durrent gain ・Complement to type 2SD1605 APPLICATIONS ・Designed for use in low frequency power amplifier applications PINNING
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2SB1105
O-220C
2SD1605
-30mA
-120V,
-100V,
2SB1105
2SD1605
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2SB1105
Abstract: 2SD1605
Text: Inchange Semiconductor Product Specification 2SB1105 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC durrent gain ・Complement to type 2SD1605 APPLICATIONS ・Designed for use in low frequency power amplifier applications
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2SB1105
O-220C
2SD1605
-30mA
-120V,
-100V,
2SB1105
2SD1605
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Hitachi DSA00164
Abstract: No abstract text available
Text: 2SD1605 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB1105 Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector Flange 3. Emitter ID 3.0 kΩ (Typ) 400 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol
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2SD1605
2SB1105
O-220AB
D-85622
Hitachi DSA00164
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2SB1105
Abstract: 2SD1605
Text: SavantIC Semiconductor Product Specification 2SB1105 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC durrent gain ·Complement to type 2SD1605 APPLICATIONS ·Designed for use in low frequency power amplifier applications
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2SB1105
O-220C
2SD1605
-30mA
-120V,
-100V,
2SB1105
2SD1605
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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Hitachi DSA001650
Abstract: No abstract text available
Text: 2SD2111 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 3.0 kΩ Typ 400 Ω (Typ) 3 2SD2111 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage
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2SD2111
O-220FM
D-85622
Hitachi DSA001650
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2SD1039
Abstract: to-53 BUW64A
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Of) PD Max ON) hre Min fT (Hz) 'CBO t0N r Max Max (A) (8) Max (Ohms) (CE)Mt Toper Max (°C) Package Style 140 175 140 140 140 140 140 140 140 140 J J J J J J J J J J TO-220
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2SC1984
2N4233
2SB761A
2SB929A
2SB941A
2SD1252A
2SD1266A
2SD856A
BDT31B
2SD1039
to-53
BUW64A
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STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components
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100-up)
STk442-130
M56730ASP
PAC011A
PAC010A
UPC2581
PAL005A
stk413-020a
upc2581v
ecg semiconductors master replacement guide
STRS5717
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2SB1105
Abstract: 2SD1605
Text: HITACHI 2SD1605-S IL IC O N N P N T R IP L E D IF F U S E D L O W F R E Q U E N C Y P O W E R A M P L IF IE R C O M P L E M E N T A R Y P A IR W IT H 2 S B 1 105 J. B ase 2. Collcttar FJjngc 3 I-mi tier ( D iin f n s w in mm) ( J E D E C TO-2ZOAB) • A B S O L U T E M A X IM U M R A T IN G S <Ta=25°C)
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2SD1605
2SB1105
2SD1605
2SB1105
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15aln
Abstract: No abstract text available
Text: HITACHI 2 S B 1 1 0 5 SILICON PNP TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIEfT COMPLEMENTARY PAIR WITH 2SD1605 i r t ^ I. K am « 7. OilUxro? ç| taftgc 3. fomuer 0<mcr»«<*ns fe r-urt) (JEDEC TO-220AB) • ABSOLUTE MAXIMUM RATINGS (Ta=2SX) Symbol item
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2SB1105
2SD1605
O-220AB)
2SBII05
15aln
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Untitled
Abstract: No abstract text available
Text: 2SD1605 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SB1105 Outline T O -2 2 Q A B 3 Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage ^GBO 120 V Collector to em itter voltage
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2SD1605
2SB1105
D-85622
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Untitled
Abstract: No abstract text available
Text: HITACHI 2SD1605 SILICON NPN TRIPLE DIFFUSED LOW FR EQ UENC Y PO W ER AMPLIFIER CO M PLEM ENTARY PAIR W ITH 2 S 8 1 105 ! 1W 2. < 5Í:!TKR<iW>ns if. m m (JEDEC TO-220AB) I ABS O LU TE M AXIM UM RATING S (T.r*2.V>0 Item Sym bol! M AXIM UM CHANN EL DISSIPATION
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2SD1605
O-220AB)
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Untitled
Abstract: No abstract text available
Text: 2SD1605 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SB1105 Outline TO-220AB 2 I T 1 |[ WI 1 2 _ 3 1 . Base 2. Collector Flange 3. Emitter T k. Y' T t 1 — V A — 1— W — 1- 1 3.0 kQ. 400 Q.
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2SD1605
2SB1105
O-220AB
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2sb1099
Abstract: 2SB1100 2sd1593 2SD1594 2SD1617 LFPA 2SD1591 2SD1595 2SD1583-Z 2SD1584
Text: - 256 - i+ 2SD1583-Z 2SD1584 2SD1584-Z 2SD1585 2SD1586 2SD1587 2SD1588 2SD1589 2SD159Q 2SD1591 2SD1592 2SD1593 2SD1594 2SD1595 i?nicfiT b'jui'j a i 2SD1599 2SD1600 2SD1601 2SD1602 2SD1603 2SD1604 2SD1605 2SD1606 2SD1608 2SD1609 2SD1610 2SD1611 2SD1614 2SD1615
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2SD1583-Z
2SD1584
2SD1584-Z
2SD1585
2SD1586
2SD1587
2SD1588
T0-220ABJFJ
2SD1606
2SB1108
2sb1099
2SB1100
2sd1593
2SD1594
2SD1617
LFPA
2SD1591
2SD1595
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Hitachi SDT 100
Abstract: No abstract text available
Text: 2SD1605 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SB1105 Outline TQ -220AB Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage ^C B O 120 V Collector to emitter voltage
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2SD1605
2SB1105
-220AB
2SD1605_
Hitachi SDT 100
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Untitled
Abstract: No abstract text available
Text: 2SD2111 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220FM 2SD2111 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage ^C B O 120 V Collector to em itter voltage VcEO 120 V Emitter to base voltage
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2SD2111
-220FM
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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2sk1058 equivalent
Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,
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O220F
SP-10
SP-12
SP-12TA
1560D
2sk1058 equivalent
MBM300BS6
Hitachi MOSFET
2SK1270
transistor 2sk 12
2sk1645
2SK975 equivalent
equivalent transistor 2sk
2SK1058 MOSFET APPLICATION NOTES
2SC297
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Untitled
Abstract: No abstract text available
Text: 2SD2111 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline T O -2 2 0 F M 2SD2111 Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit Collector to base voltage ^G B O 120 V Collector to em itter voltage V CEo 120
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2SD2111
D-85622
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor 2sk
Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796
Text: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k
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2SD16
2SD1603
2SD1604
2SD1605
2SD1606
2SD1756
2SD1976
2SB1389
2SB1390
2SB1391
transistor 2sk
transistor sp-10 4ac14
2SK157
transistor 2sk 70
2sj318
transistor 2sk 12
2SK2851
4AC14
TRANSISTOR 2sK 135
K 2796
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2SB1099
Abstract: 2SD1491 2SB1100 2sb111 2SB1072L 2SB1072S 2SB1073 2SB1075 2SB1076M 2SB1077
Text: - 74 - S % Ta=25'C, *0JttTc=25l3 m 2SB1072L 2SB1072S 2SB1073 2SB1075 2SB1Û76M 2SB1077 2SB1078K 2SB1079 2SB1085 2SB1085A 2SB1086 2SB1086A 2SB1087 2SB1089 2SB1090 2SB1091 2SB1093 2SB1094 2SB1095 2SB1096 2SB1097 2SB1098 2SB1099 2SB1100 2SB1101 2SB1102 2SB1103
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2SB1072L
2SB1072S
2SB1073
2SB1075
2SB1076M
2SB1077
2SB1078K
2SB1099
MP-45)
2SB1100
2SB1099
2SD1491
2SB1100
2sb111
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Untitled
Abstract: No abstract text available
Text: 2SD2111 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220FM n 1 2 3 2 1. Base 2. C ollector 3. Emitter 1^ 1^ 3.0 kQ. Typ [1 400 Q. (Typ) ¿ 3 ¡t'D 2SD2111 Absolute Maximum Ratings (Ta = 25 °C) Item Sym bol Rating
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2SD2111
-220FM
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