2SB1033
Abstract: 2SD1437
Text: 2SB1033 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SD1437 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)
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2SB1033
O-220
2SD1437
2SB1033
2SD1437
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2SB1033
Abstract: 2SD1437
Text: Inchange Semiconductor Product Specification 2SB1033 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD1437 APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to
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2SB1033
O-220
2SD1437
O-220)
2SB1033
2SD1437
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2SB1033
Abstract: 2SD1437
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1033 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@IC= -2A ·Complement to Type 2SD1437
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2SB1033
2SD1437
2SB1033
2SD1437
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2SB1033
Abstract: 2SD1437
Text: 2SD1437 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SB1033 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)
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2SD1437
O-220
2SB1033
2SB1033
2SD1437
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2SB1033
Abstract: 2SD1437
Text: SavantIC Semiconductor Product Specification 2SB1033 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SD1437 APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to
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2SB1033
O-220
2SD1437
O-220)
2SB1033
2SD1437
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2SB1033
Abstract: 2SD1437
Text: JMnic Product Specification 2SB1033 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD1437 APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base
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2SB1033
O-220
2SD1437
O-220)
2SB1033
2SD1437
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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STK411-230E
Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
UPC2581V
PAL005A
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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2SD369A
Abstract: to-53 2SC1025 MJE2491 KT816V matsua
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A PD r 'CBO Max hFE fT on ON) Min (Hz) 35 35 35 35 35 35 35 35 40 40 40 40 40 40 40 40 40 40 40 40 25 40 40 40 40 40 60 60 10 10 10 10 10 20 20 20 20 25 25 2 0M 10M 10M 1 0M 3 0M
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2N4232
2SB761
2SB929
2SB941
2SD1266
2SD856
2SD1761
BDT31A
2SD369A
to-53
2SC1025
MJE2491
KT816V
matsua
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STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components
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100-up)
STk442-130
M56730ASP
PAC011A
PAC010A
UPC2581
PAL005A
stk413-020a
upc2581v
ecg semiconductors master replacement guide
STRS5717
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2SD1460
Abstract: 2SD1477 2SD1473 2sd1467 2SD1422 2sd1425 2SB1029 2SD1466 2SD1058 2SD1407
Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1401 1500 7 3.5A 80W(Tc=25ºC) 150 25 5 500 3* 120W 2SD1402
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2SD1401
2SD1402
2SD1403
2SD1404
2SD1405
2SD1406
2SD1407
2SD1408
2SD1409
2SD1410
2SD1460
2SD1477
2SD1473
2sd1467
2SD1422
2sd1425
2SB1029
2SD1466
2SD1058
2SD1407
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2SD1437
Abstract: 2SB1033 2sB103
Text: K ~7> V 7 $ / I ransistors 2SD1437 2SD1437 H M i S f f c 7 ° U - ^ N P N '> U = ]> h 7>'sZ$ Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • W F 2 T h ill/D im en s io n s U n it: mm ~ 1) V C E ( s a t ) = 0 . 3 V ( T y p . ) “ “ (at Ic / I b = 2 A /0 .2 A )
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2SD1437
2SB1033
2SB1033.
O-220
2SD1437
2SB1033
2sB103
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Untitled
Abstract: No abstract text available
Text: h 7 > y ^ ^ / T ransistors 2SD1437 2SD1437 E .W .& W l- fl'- j- M NPN '> '; = ! > l&MI'/J&WJjtiU f f l/ L o w Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • W K ^ -> £ l/D im e n s io n s (U n it: mm 1) VCe , sat )=0.3V (Typ.) (at Ic / I b =2A /0.2A )
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2SD1437
2SB1033.
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rohm 574
Abstract: 640N
Text: 4DE R O H M CO LTD D 7 0 2 0 ^ 0 D 0 s a 7 s IRHM 3 / T ransistors 2SD1437 7 = 3 3 -/1 2SD1437 H g iÉ i& 7 ° U - :H f ê N P N '> U = 1 > h 7 > V X ^ Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • sSEl/D im en sio n s Unit : mm 1) VCE( Sat)=0.3V(Typ.) f c n 0
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2SD1437
2SB1033.
rohm 574
640N
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Untitled
Abstract: No abstract text available
Text: ROH M CO 4GE D LTD E3 7020^=1=] 000SS24 2 E S RHM 2SB1033 / T ransistors - p s 3-/9 xt°$*yrJi'7°l'-J-BPNP y ' j 3 > h 7 > y ^ ^ fôJÜ&H^Jii'iïffl/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor W f i- t f > i0 / D im e n s io n s {U n it : mm
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000SS24
2SB1033
2SD1437.
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2SD1292
Abstract: 2SA1038 834x
Text: h 7 > V X £ /T r a n s is to r s panM « S E ¿ í f H t í l C O l ' T • M3ÉIÍHSS • papHffiE>S» 2 7 H !£ 7Tsb i t if, ^ t ir o ^ 3 * « 5 x V N '< X í , r v w X liÿ g f iD ic s iï f â f ê M * £ t > o r í s e . f , -fro n M » ttt tlS D f fla i* » t/« iit ti* r o * 4 ic « t- 3 T a is n i
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2SD1761
-220FP)
2SD1762
2SB1186
2SB1185
2SB1181
04X1CT®
2SD1292
2SA1038
834x
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2SD2037
Abstract: 2SC4354 2SD1761 J0801 2SB1335 2SB1353 2SD1832 2sd1856 2SD2034 2SB1293
Text: ROHN CORP □1 D E l ? f l a f l 1 cn -i" f DGDllta . - I '-” W 3 I P i . ; 7 ~ -Z 9 * & / D ij4 * ^ » n f if f ir r • TO-220, TO-220FP Types p - , i l i 111 n l * New Products Type, - Funclibn_ Driver p p ^ ^ É â à iÈ a w h ià i^ te ^ ^ ÿ iB ^ iïa S sà iÉ ijiû ite a ijie e Jje Je Ji
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O-220,
O-22QFP
2SB1293
T0-220
2SB1294
T0-220FP
2SB1334
O-220
2SB1335
2SD2037
2SC4354
2SD1761
J0801
2SB1353
2SD1832
2sd1856
2SD2034
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2sd143
Abstract: 2SD1437 2sb1033 2SD14
Text: h "7 > V ^ 2 S 2SB1033 /T r a n s is to r s B 1 3 3 X h ; ^ d r ' > T J U 7 0U - ^ ^ P N P y ' j a > h 7 > y ^ $ 1ÊJi>Æ ^Ji^lliffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • • ^ f f i ^ j ii a / D i m e n s i o n s U nit : mm
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2SB1033
2SD14
2SD1437.
2sd143
2SD1437
2sb1033
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2SD1431
Abstract: 2SD1415 2SD1432 2-16D3A 2SD1417 2SD1418 2SD1419 2SD1420 2SD1421 2SD1423
Text: - 248 - Ta-25T>, *E[l[äTc=25'C M S ?± 2SD1417 2SD1418 2SD1419 2SD1420 2SD1421 2SD1423 2SD1423A & PSW/D Vq b q VcEQ (V) (V) 60 S Ic C D O Pc Pc* ICBO (A) (ff) (ff) (max) <//A) 60 7 2 VcB (V) S f (min) i U (max) 30 100 60 2000 15 0 0 0 f t ( T a = 2 5 tC )
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2SD1417
2SD1418
2SD1419
2SD1420
2SD1421
2SD1423
2SD1423A
2SD1424
KTSD1442
2SB925
2SD1431
2SD1415
2SD1432
2-16D3A
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2SB1039
Abstract: 2SB1045 2SB1038 2SB1028 2SB1030 2SB1030A 2SB1031K 2SB1032K 2SB1033 2SB1035
Text: - 72 - w. T a = 2 5 sC 1* E P Í Í T c = 2 T O m 2SB1028 2SB1030 2SB1030A 2SB1031K 2SB1032K 2SB1033 2SB1035 2SB1036 2SB1037 2SB1038 2SB1039 2SB1045 2SB1046 2SB1048 2SB1050 2SB Î052 2SB1054 2SB1055 2SB1056 2SB1057 2SB1058 2SB1059 2SB1061 2SB1062 2SB1063
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2SB1028
2SB1030
2SB1030A
2SB1031K
2SB1032K
2SB1033
2SD1499
2SB1063
2SD1505
O-220ABÂ
2SB1039
2SB1045
2SB1038
2SB1035
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2SD1966
Abstract: 2SD1255M 2SB maintenance IMB6 2SC2808
Text: h -7 > y 7, $ /Transistors h z 7 > y Z $ $ H n h —W h 7 > y ^ ^ i p n — f t ü / T r a n s is t o r s Summary • h 7 v 3. $ /Transistors 2SA/2SB/2SC/2SC/2SD Type V ceo (V ) fT(M H z) Cob(pF) hFE Package Page 6.5 82-390 FTR 75 Icm - 1 .5 A 300 200 5.5
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2SA785
2SA790
2SA790M
2SA806
2SA821
2SA825
2SA825S
2SA83Û
2SA830S
2SA854
2SD1966
2SD1255M
2SB maintenance
IMB6
2SC2808
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