2SB1061 Search Results

2SB1061 Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SB1061		Renesas Technology	Silicon PNP Triple Diffused		Original	PDF
2SB1061		Hitachi Semiconductor	Silicon PNP Triple Diffused Low Frequency Power Amplifier		Scan	PDF
2SB1061		Unknown	The Transistor Manual (Japanese) 1993		Scan	PDF
2SB1061		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
2SB1061		Unknown	Shortform Data and Cross References (Misc Datasheets)		Short Form	PDF
2SB1061		Unknown	Transistor Shortform Datasheet & Cross References		Scan	PDF

2SB1061 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Hitachi DSA001650 Abstract: No abstract text available Text: 2SB1061 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector Flange 3. Emitter 55 kΩ (Typ) 3 Absolute Maximum Ratings (Ta = 25GC) Item Symbol Ratings Unit Collector to base voltage VCBO –300	Original	2SB1061 O-220AB D-85622 Hitachi DSA001650	PDF
2sk2500 Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	C11178JJCV0IF0012 C11178JJCV0IF MIL-HDBK-217 MILMIL10100 MIL-HDBK-217Fit 2sk2500 UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1	PDF
transistor NEC 2SK2500 Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	MIL-HDBK-217 C11178EJCV0IF transistor NEC 2SK2500 NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24	PDF
2SB1013 Abstract: 2SB1014 2SB1074 2SB1060 2SB1047 2sb1099 2SB1100 2SB1039 2SB1040 2SB1041 Text: Page 1 of 2 Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB1001 -20 -6 -2A 1W 150 200 -2 -100 80* 50 2SD1367	Original	2SB1001 2SD1367 2SB1002 2SD1368 2SB1003 2SB1004 2SB1005 2SB1007 2SB1008 2SB1009 2SB1013 2SB1014 2SB1074 2SB1060 2SB1047 2sb1099 2SB1100 2SB1039 2SB1040 2SB1041	PDF
Untitled Abstract: No abstract text available Text: HITACHI 2SB1061-Silicon PNP Triple Diffused Low Frequency Power Amplifier Absolute M axim um R atings Ta = 25°C Item Symbol Rating Unit Collector to base voltage Vcso -300 V Collector to emitter voltage Vceo -300 V Emitter to base voltage	OCR Scan	2SB1061--------------Silicon O-220 2SB1061 2SB1061	PDF
Untitled Abstract: No abstract text available Text: 2SB1061 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220A B i •■ M[ \|[ W1 1 2 1. Base 2. C ollector Flange 3. Emitter 55 kQ (Typ) Absolute Maximum Ratings (Ta 25°C) = Item Symbol Ratings Unit Collector to base voltage	OCR Scan	2SB1061 -220A 2SB10	PDF
Untitled Abstract: No abstract text available Text: 2SB1061 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220A B l ì • I 1. Base 2. C ollector Flange 3. Emitter 1 2 55 k£2 (Typ) Absolute Maximum Ratings (Ta 25 °C) = Item Symbol Ratings Unit Collector to base voltage	OCR Scan	2SB1061 -220A D-85622	PDF
2SB1061 Abstract: No abstract text available Text: HITACHI 2SB1061-Silicon PNP Triple Diffused Low Frequency Power Amplifier Absolute M axim um Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage VCeo -3 0 0 V Collector to emitter voltage VCE0 -3 0 0 V Emitter to base voltage	OCR Scan	2SB1061- 2SB1061	PDF
2SB1039 Abstract: 2SB1045 2SB1038 2SB1028 2SB1030 2SB1030A 2SB1031K 2SB1032K 2SB1033 2SB1035 Text: - 72 - w. T a = 2 5 sC 1* E P Í Í T c = 2 T O m 2SB1028 2SB1030 2SB1030A 2SB1031K 2SB1032K 2SB1033 2SB1035 2SB1036 2SB1037 2SB1038 2SB1039 2SB1045 2SB1046 2SB1048 2SB1050 2SB Î052 2SB1054 2SB1055 2SB1056 2SB1057 2SB1058 2SB1059 2SB1061 2SB1062 2SB1063	OCR Scan	2SB1028 2SB1030 2SB1030A 2SB1031K 2SB1032K 2SB1033 2SD1499 2SB1063 2SD1505 O-220ABÂ 2SB1039 2SB1045 2SB1038 2SB1035	PDF
KY2 transistor Abstract: transistor ky2 4w-2w hybrid hitachi slic application note transistor bsh 103 zx 55 Text: O K I Semiconductor MSA4709A Subscriber Line interface Circuit GENERAL DESCRIPTION The MSA4709A is designed to provide BSH functions and to meet PABX transmission performance requirements. This device can replace the hybrid transformet circuit. FEATURES • B Battery feed , S (Supervision), and H (Hybrid) functions integrated on chip.	OCR Scan	MSA4709A MSA4709A 30-pin SDJP30-P-4bb 2SB1061 2SD1502 4AE11 KY2 transistor transistor ky2 4w-2w hybrid hitachi slic application note transistor bsh 103 zx 55	PDF
kyl 1020 Abstract: Darlington transister A4709A 1l400 MSA4709ASS MSA4709 darlington tip pnp transister symbol AL24 MSA4709A Text: O K I Semiconductor MSA4709A Subscriber Line Interface Circuit G EN ER A L DESCRIPTIO N The MSA4709A is designed to pro v id e BSH functions a n d to m eet PABX transm ission perform ance requirem ents. T his device can replace the h y b rid tran sfo rm et circuit.	OCR Scan	MSA4709A MSA4709A 30-pin 2SB1061 2SD1502 4AE11 72m2md b72M24G kyl 1020 Darlington transister A4709A 1l400 MSA4709ASS MSA4709 darlington tip pnp transister symbol AL24	PDF
IVD12 Abstract: IVD10 4709 bt bt 4709 hitachi slic application note 48V 2w zener diode SCR SN 100 Text: O K I sem iconductor M SA 4709 / SUBSCRIBER LINE INTERFACE CIRCUIT GENERAL DESCRIPTION The M5A4709 is designed to provide BSH functions and to m eet PA B X transmission perform ance requirements. This device can replace the hybrid transform er circuit. FEATURES	OCR Scan	M5A4709 150KH 2SB1061 2SD1502 PABX-MSA4709 IVD12 IVD10 4709 bt bt 4709 hitachi slic application note 48V 2w zener diode SCR SN 100	PDF