2SD1376
Abstract: Darlington NPN Silicon Diode npn 100v 1.5a 2SB1012
Text: Inchange Semiconductor Product Specification 2SD1376 Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·DARLINGTON ·Complement to type 2SB1012 APPLICATIONS ·For low frequency power amplifier applications PINNING see Fig.2 PIN DESCRIPTION
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2SD1376
O-126
2SB1012
2SD1376
Darlington NPN Silicon Diode
npn 100v 1.5a
2SB1012
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Hitachi DSA001650
Abstract: No abstract text available
Text: 2SB1012 K Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD1376(K) Outline TO-126 MOD 2 3 1. Emitter 2. Collector 3. Base 1 2 3 ID 5 kΩ (Typ) 1 kΩ (Typ) 1 2SB1012(K) Absolute Maximum Ratings (Ta = 25°C) Item
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2SB1012
2SD1376
O-126
D-85622
Hitachi DSA001650
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Hitachi DSA00279
Abstract: No abstract text available
Text: 2SD1376 K Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1012(K) Outline 2SD1376(K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage
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2SD1376
2SB1012
Hitachi DSA00279
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2SB1012
Abstract: 2SD1376 2sB101
Text: 2SB1012 K Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD1376(K) Outline TO-126 MOD 2 3 1 1. Emitter 2. Collector 3. Base 2 3 ID 5 kΩ (Typ) 1 kΩ (Typ) 1 2SB1012(K) Absolute Maximum Ratings (Ta = 25°C) Item
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2SB1012
2SD1376
O-126
2sB101
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2SB1012
Abstract: 2SD1376 Hitachi DSA00396
Text: 2SD1376 K Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1012(K) Outline TO-126 MOD 2 3 1 1. Emitter 2. Collector 3. Base 2 3 ID 6 kΩ (Typ) 0.5 kΩ (Typ) 1 2SD1376(K) Absolute Maximum Ratings (Ta = 25°C) Item
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2SD1376
2SB1012
O-126
Hitachi DSA00396
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2SB1012
Abstract: 2SD1376 DSA003645
Text: 2SD1376 K Silicon NPN Epitaxial ADE-208-910 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SB1012(K) Outline TO-126 MOD 2 3 1 1. Emitter 2. Collector 3. Base 2 3 ID 6 kΩ (Typ) 0.5 kΩ (Typ) 1 2SD1376(K) Absolute Maximum Ratings (Ta = 25°C)
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2SD1376
ADE-208-910
2SB1012
O-126
DSA003645
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2SB1012
Abstract: 2SD1376 DSA003644
Text: 2SB1012 K Silicon PNP Epitaxial ADE-208-864 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SD1376(K) Outline TO-126 MOD 2 3 1 1. Emitter 2. Collector 3. Base 2 3 ID 5 kΩ (Typ) 1 kΩ (Typ) 1 2SB1012(K) Absolute Maximum Ratings (Ta = 25°C)
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2SB1012
ADE-208-864
2SD1376
O-126
DSA003644
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Hitachi DSA00164
Abstract: No abstract text available
Text: 2SD1376 K Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1012(K) Outline TO-126 MOD 2 3 1 1. Emitter 2. Collector 3. Base 2 3 ID 6 kΩ (Typ) 0.5 kΩ (Typ) 1 2SD1376(K) Absolute Maximum Ratings (Ta = 25°C) Item
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2SD1376
2SB1012
O-126
D-85622
Hitachi DSA00164
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2SD1376
Abstract: 2SB1012
Text: SavantIC Semiconductor Product Specification 2SD1376 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·DARLINGTON ·Complement to type 2SB1012 · APPLICATIONS ·For low frequency power amplifier applications PINNING see Fig.2 PIN DESCRIPTION
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2SD1376
O-126
2SB1012
2SD1376
2SB1012
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Hitachi DSA002788
Abstract: No abstract text available
Text: 2SB1012 K Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD1376(K) Outline TO-126 MOD 2 3 1 1. Emitter 2. Collector 3. Base 2 3 ID 5 kΩ (Typ) 1 kΩ (Typ) 1 2SB1012(K) Absolute Maximum Ratings (Ta = 25°C) Item
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2SB1012
2SD1376
O-126
D-85622
Hitachi DSA002788
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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2SD1388
Abstract: 2SD1387 2SD1370 2SD1369 2SD1307 2SD1331 2SD1360 2SD1346 2SD1333 2SD1371
Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 45W 2SD1301 1500 5 2A 130 3-12 10 1A (Tc=25ºC) 2SD1302 25
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2SD1301
2SD1302
2SD1303
2SD1304
2SD1305
2SD1306
2SD1307
2SD1308
2SD1309
2SD1310
2SD1388
2SD1387
2SD1370
2SD1369
2SD1307
2SD1331
2SD1360
2SD1346
2SD1333
2SD1371
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7054F
Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver
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2sc4537
2sc454.
2sc4591
2sc4592
2sc4593
2sc460.
2sc4628
2sc4629
2sc4643
2sc4680
7054F
BC564A
HA13563
AC123A
HITACHI microcontroller H8 534 manual
IC 74LS47
AC538
BC245A
2SK3235
HA13557
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transistor 2SB618
Abstract: 3A/fllnm 80
Text: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS
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2SA733
2SJ74
2SK170
2SJ76
2SK213
2SJ77
2SK214
2SJ103
2SK246
2SJ109
transistor 2SB618
3A/fllnm 80
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2SB1012
Abstract: 2SD1376
Text: HITACHI 2SD1376 g SILIC O N NPN EPIT A X IA L LO W F R E Q U E N C Y P O W E R A M P L IF IE R C O M P LE M E N T A R Y PA IR WITH 2SB1012(ft 1. lim Itier 2. Collector 3. Hase (Dimensions in mm) 2.3 ±03 ( JE D E C TO-126MOD.) M A B S O L U T E M AXIMUM R A T IN G S (Ta=25°C)
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2SD1376
2SB1012
O-126MOD.
2SDI248Â
2SD1376Â
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Untitled
Abstract: No abstract text available
Text: 2SD1376 K Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SB1012(K) Outline TO -126 MOD 2SD1376(K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage ^CBO 120 V Collector to em itter voltage
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2SD1376
2SB1012
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Untitled
Abstract: No abstract text available
Text: 2SD1376 K Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SB1012(K) Outline TO -126 MOD 2SD1376ÇK) Absolute Maximum Ratings (Ta = 25 °C) Item S ym bol R a tin g U n it Collector to base voltage ^GBG 120 V
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2SD1376
2SB1012
2SD1376Ã
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Untitled
Abstract: No abstract text available
Text: 2SB1012 K Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SD1376(K) Outline TO -126 MOD Ì 1. Emitter 2. Collector 3. Base 2SB1012(K) Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating Unit Collector to base voltage
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2SB1012
2SD1376
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Untitled
Abstract: No abstract text available
Text: 2SD1376 K Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SB1012(K) Outline 2SD1376(K) Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating Unit Collector to base voltage ^G B O 120 V Collector to em itter voltage
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2SD1376
2SB1012
D-85622
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Untitled
Abstract: No abstract text available
Text: HITACHI 2SB1012 K SILICON PNP EPITAXIAL LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1376 !j ; ; - -. 1 2 1. Emitter 2, OoJIecier 1 Base DimeiHioni in mm (JEOEC TO-126 MOO.) I ABSOLUTE MAXIMUM RATINGS (Ta=25“C) Item Symbol
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2SB1012
2SD1376®
O-126
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2SB1012
Abstract: No abstract text available
Text: 2SB1012 K Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SD1376(K) Outline TO-126 MOD Ì 2 O 3 1. Emitter 2. Collector 3. Base O—vw 5 k£2 (Typ) -VW 1 k£2 (Typ) Q i' ¿ 1 2SB1012(K) Absolute Maximum Ratings (Ta = 25 °C)
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2SB1012
2SD1376
O-126
D-85622
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2SD977
Abstract: 2SD600K 2sc2233 2sc2373 2SD849 2SD1953 2SD763 ROHM 1004 nec 2sd560 2SD1162
Text: 228 - s « « tt Manuf. Type No. 2SD 973 -s-virv fc' T 2SD 973A K T 2SD 974 B ÎL tt y 2SD 972 2SD H ï¥ SANYO JÜ ^ TOSHIBA Vy>TV 2SD 971 CD - 975> 2SD 976 g fr 2SD 976A B ÎL 2SD 977 E. & 2SD 978 H H & 2S0 979 2SD1190 a m NEC B ÎL H ITACH I 2SD1162 2SD 11 1 4 K
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2SD971
2SD972
2SD973
2SD973A
2SD974
2SD560
2SD1162
2SD76800
2SD1190
2SD863
2SD977
2SD600K
2sc2233
2sc2373
2SD849
2SD1953
2SD763
ROHM 1004
nec 2sd560
2SD1162
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2sk1058 equivalent
Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,
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O220F
SP-10
SP-12
SP-12TA
1560D
2sk1058 equivalent
MBM300BS6
Hitachi MOSFET
2SK1270
transistor 2sk 12
2sk1645
2SK975 equivalent
equivalent transistor 2sk
2SK1058 MOSFET APPLICATION NOTES
2SC297
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2SD424 TOSHIBA
Abstract: 2sd472 2SC1818 MG50G2CL3 2SD873 2sd4242 2SD424 2SD335 2SD650 2SD718
Text: - 216 - s « T y p e No. a « Manuf. m h S AN YO JE *ï TOSHIBA 2SD 492 ^ h □ — ^ 2SD 493 ^ ï h a - 7 2 SD 718 2SD 494 ^ í h □ 2SD718 2SD 490 ^ h 2SD 499 ^ i h □ — "5 2SD1148 J Í h□ — ^ T ± 2S D 1 1 4 8 X 2 s $ S: s: M 2£ 0 ÏZ y -—
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2SD492
2SD493
2SD494
2SD490
2SD499
2SD500
2SD519
2SD522
2SD523
2SD424
2SD424 TOSHIBA
2sd472
2SC1818
MG50G2CL3
2SD873
2sd4242
2SD335
2SD650
2SD718
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