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    2SD1259A Search Results

    2SD1259A Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1259A Panasonic Silicon NPN triple diffusion planar type Original PDF
    2SD1259A Panasonic NPN Transistor Original PDF
    2SD1259A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1259A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1259A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1259AQ Panasonic Silicon NPN Triple Diffusion Planar Type Power Transistor Original PDF

    2SD1259A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Collector-base voltage Emitter open Symbol 2SD1259 VCBO 2SD1259A Rating Unit 80 V 14.4±0.5 3.0+0.4 –0.2 4.4±0.5


    Original     		2SD1259, 2SD1259A 2SD1259 2SD1259A PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Collector-base voltage (Emitter open) Symbol 2SD1259


    Original     		2002/95/EC) 2SD1259, 2SD1259A 2SD1259 2SD1259A PDF

    2SD1259

    Abstract: 2SD1259A
    Text: Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Collector-base voltage Emitter open Symbol 2SD1259 VCBO 2SD1259A Rating Unit 80 V 14.4±0.5 3.0+0.4 –0.2 4.4±0.5


    Original     		2SD1259, 2SD1259A 2SD1259 2SD1259 2SD1259A PDF

    2SD1259

    Abstract: 2SD1259A
    Text: Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type 1.5±0.1 10.0±0.3 1.0±0.1 1.5max. 1.1max. 2.0 ● High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to


    Original     		2SD1259, 2SD1259A 2SD1259 10MHz 2SD1259 2SD1259A PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Collector-base voltage (Emitter open) Symbol 2SD1259


    Original     		2002/95/EC) 2SD1259, 2SD1259A 2SD1259 2SD1259A PDF

    2SD1259

    Abstract: 2SD1259A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit: mm 6.0±0.2 1.0±0.1 2SD1259 Collector-base voltage


    Original     		2002/95/EC) 2SD1259, 2SD1259A 2SD1259 2SD1259 2SD1259A PDF

    2SD1259

    Abstract: 2SD1259A
    Text: Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type 1.5±0.1 10.0±0.3 1.0±0.1 1.5max. 1.1max. 2.0 ● High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to


    Original     		2SD1259, 2SD1259A 2SD1259 2SD1259 2SD1259A PDF

    2SD1039

    Abstract: to-53 BUW64A
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Of) PD Max ON) hre Min fT (Hz) 'CBO t0N r Max Max (A) (8) Max (Ohms) (CE)Mt Toper Max (°C) Package Style 140 175 140 140 140 140 140 140 140 140 J J J J J J J J J J TO-220


    Original     		2SC1984 2N4233 2SB761A 2SB929A 2SB941A 2SD1252A 2SD1266A 2SD856A BDT31B 2SD1039 to-53 BUW64A PDF

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SD1259;2SD1259A TO-252 +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1


    Original     		2SD1259 2SD1259A O-252 2SD1259 PDF

    2SD1259A

    Abstract: 2SD1259
    Text: Transistors SMD Type Silicon NPN Triple Diffusion Planar Type 2SD1259;2SD1259A TO-252 +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1


    Original     		2SD1259 2SD1259A O-252 2SD1259 2SD1259A PDF

    2SD1204

    Abstract: 2SD1202 2SD1278 2SD1227 2SD1300 2SD1225 2SD1297 equivalent 2sd1285 2SD1240 2SD1201
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 100W 2SD1201 500 7 10A 150 100 3 10A (Tc=25ºC) 100W 2SD1202


    Original     		2SD1201 2SD1202 2SD1203 2SD1204 2SD1205 20002SD1205A 2SD1206 2SB894 2SD1207 2SD1208 2SD1204 2SD1202 2SD1278 2SD1227 2SD1300 2SD1225 2SD1297 equivalent 2sd1285 2SD1240 2SD1201 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1259, 2SD1259A 2SD1259, 2SD1259A Silicon NPN Triple-Diffused Planar Type • Package Dimensions High DC Current Gain hFE , Power Amplifier ■ Features • High DC c u rre n t gain (hFE) • Good linearity of DC cu rre n t gain (I i f e )


    OCR Scan     		2SD1259, 2SD1259A 2SD1259 001bb47 PDF

    2SD1259

    Abstract: 2SD1259A
    Text: Power T ransistors 2SD1259, 2SD1259A 2SD1259, 2SD1259A Silicon NPN Triple-Diffused Planar Type Package Dim ensions High D C Current Gain hFE , Power Amplifier • Features • H igh DC c u r re n t gain (I i f e ) • G ood lin e a rity o f D C c u r re n t gain (hFE)


    OCR Scan     		2SD1259, 2SD1259A 2SD1259 2SD1259A PDF

    D1274A

    Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
    Text: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691


    OCR Scan     		2SC4627 2SC5021 -2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 2SD2345 D1274A B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398 PDF