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    2SD1259 Search Results

    2SD1259 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD1259 Kexin Silicon NPN Triple Diffusion Planar Type Original PDF
    2SD1259 Panasonic NPN Transistor Original PDF
    2SD1259 Panasonic Silicon NPN triple diffusion planar type Original PDF
    2SD1259 TY Semiconductor Silicon NPN Triple Diffusion Planar Type - TO-252 Original PDF
    2SD1259 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1259 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1259 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1259A Panasonic Silicon NPN triple diffusion planar type Original PDF
    2SD1259A Panasonic NPN Transistor Original PDF
    2SD1259A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1259A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1259A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1259AQ Panasonic Silicon NPN Triple Diffusion Planar Type Power Transistor Original PDF
    2SD1259O Panasonic Silicon NPN Triple Diffusion Planar Type Power Transistor Original PDF
    2SD1259P Panasonic Silicon NPN Triple Diffusion Planar Type Power Transistor Original PDF
    2SD1259Q Panasonic Silicon NPN Triple Diffusion Planar Type Power Transistor Original PDF

    2SD1259 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Collector-base voltage Emitter open Symbol 2SD1259 VCBO 2SD1259A Rating Unit 80 V 14.4±0.5 3.0+0.4 –0.2 4.4±0.5


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    PDF 2SD1259, 2SD1259A 2SD1259 2SD1259A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Collector-base voltage (Emitter open) Symbol 2SD1259


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    PDF 2002/95/EC) 2SD1259, 2SD1259A 2SD1259 2SD1259A

    2SD1259

    Abstract: 2SD1259A
    Text: Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Collector-base voltage Emitter open Symbol 2SD1259 VCBO 2SD1259A Rating Unit 80 V 14.4±0.5 3.0+0.4 –0.2 4.4±0.5


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    PDF 2SD1259, 2SD1259A 2SD1259 2SD1259 2SD1259A

    2SD1259

    Abstract: 2SD1259A
    Text: Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type 1.5±0.1 10.0±0.3 1.0±0.1 1.5max. 1.1max. 2.0 ● High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to


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    PDF 2SD1259, 2SD1259A 2SD1259 10MHz 2SD1259 2SD1259A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Collector-base voltage (Emitter open) Symbol 2SD1259


    Original
    PDF 2002/95/EC) 2SD1259, 2SD1259A 2SD1259 2SD1259A

    2SD1259

    Abstract: 2SD1259A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit: mm 6.0±0.2 1.0±0.1 2SD1259 Collector-base voltage


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    PDF 2002/95/EC) 2SD1259, 2SD1259A 2SD1259 2SD1259 2SD1259A

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SD1259;2SD1259A TO-252 +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1


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    PDF 2SD1259 2SD1259A O-252 2SD1259

    2SD1259

    Abstract: 2SD1259A
    Text: Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type 1.5±0.1 10.0±0.3 1.0±0.1 1.5max. 1.1max. 2.0 ● High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to


    Original
    PDF 2SD1259, 2SD1259A 2SD1259 2SD1259 2SD1259A

    2SD1259A

    Abstract: 2SD1259
    Text: Transistors SMD Type Silicon NPN Triple Diffusion Planar Type 2SD1259;2SD1259A TO-252 +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1


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    PDF 2SD1259 2SD1259A O-252 2SD1259 2SD1259A

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SD1039

    Abstract: to-53 BUW64A
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Of) PD Max ON) hre Min fT (Hz) 'CBO t0N r Max Max (A) (8) Max (Ohms) (CE)Mt Toper Max (°C) Package Style 140 175 140 140 140 140 140 140 140 140 J J J J J J J J J J TO-220


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    PDF 2SC1984 2N4233 2SB761A 2SB929A 2SB941A 2SD1252A 2SD1266A 2SD856A BDT31B 2SD1039 to-53 BUW64A

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    2SD369A

    Abstract: to-53 2SC1025 MJE2491 KT816V matsua
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A PD r 'CBO Max hFE fT on ON) Min (Hz) 35 35 35 35 35 35 35 35 40 40 40 40 40 40 40 40 40 40 40 40 25 40 40 40 40 40 60 60 10 10 10 10 10 20 20 20 20 25 25 2 0M 10M 10M 1 0M 3 0M


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    PDF 2N4232 2SB761 2SB929 2SB941 2SD1266 2SD856 2SD1761 BDT31A 2SD369A to-53 2SC1025 MJE2491 KT816V matsua

    2SD1204

    Abstract: 2SD1202 2SD1278 2SD1227 2SD1300 2SD1225 2SD1297 equivalent 2sd1285 2SD1240 2SD1201
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 100W 2SD1201 500 7 10A 150 100 3 10A (Tc=25ºC) 100W 2SD1202


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    PDF 2SD1201 2SD1202 2SD1203 2SD1204 2SD1205 20002SD1205A 2SD1206 2SB894 2SD1207 2SD1208 2SD1204 2SD1202 2SD1278 2SD1227 2SD1300 2SD1225 2SD1297 equivalent 2sd1285 2SD1240 2SD1201

    2SD1259

    Abstract: 2SD1259A
    Text: Power T ransistors 2SD1259, 2SD1259A 2SD1259, 2SD1259A Silicon NPN Triple-Diffused Planar Type Package Dim ensions High D C Current Gain hFE , Power Amplifier • Features • H igh DC c u r re n t gain (I i f e ) • G ood lin e a rity o f D C c u r re n t gain (hFE)


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    PDF 2SD1259, 2SD1259A 2SD1259 2SD1259A

    PA8080

    Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
    Text: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)


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    PDF 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1259A 2SB937 2SD1260 PA8080 2SD1246 2SD1247 2SD1250A 2SD1251

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    B1548

    Abstract: 2SB1299A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors Application Functions VcEO lc (V) (A) lc !b (V) (A) (mA) T0-220(a) (D56) NPN TO-220F (D59) PNP ; NPN 1 < l 1 125 2SB954/A 60/80 2 < 2 2 200 2SB1052 < 1 2 400 < 1 2 200


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    PDF T0-220 O-220F 2SB954/A 2SB1052 2SD1480 2SD1265/A O-220E T0220D 2SB1169/A 2SB1170 B1548 2SB1299A

    B938A

    Abstract: B939A 2SK1967 2SD1316
    Text: N Type Package h Transistors Outline U n it I mm 6.7max 3.7max 6 5max ,1.1 ma» mm. m N5Ü' 'f "j 'T - v U s « S <D7V> h £454' ä IZ m & m à 7 1 0 - 220« ^ « ^ li lJj j J 7 7 f 7 ^ ' ^ - v T ' î o • f t fi5i.8.4 S r I ; -Ö- 08±0, RO.S/^i ! I R 0.5


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    PDF O-220 2SK1967- 2SK782- 2SK1308/A- 2SK1846- B938A B939A 2SK1967 2SD1316

    2sd2520

    Abstract: 2SD2501 2SD2502 2sD2503 2SD1327 2SD1755
    Text: Transistors Selection Guide by Applications and Functions •Silicon Power Transistors (continued) Applica­ tion Func­ tions V ceo (V) lc (A) Package (No.) VcE(sat) typ. (V) lc Ib TO-220(a) (D52) T0-220F(D55) T0-220E(D59) T0-220D(D58) N Type (D42) PNP


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    PDF O-220 T0-220F T0-220E T0-220D 2SD1719 2SD1775/A 2SD1755 2SB1195 2SD1634 2SD1336/A 2sd2520 2SD2501 2SD2502 2sD2503 2SD1327 2SD1755

    2SD2502

    Abstract: 2sd2520 2sD2503 2SD2375 2SD1755 zener 3,5 2SD1474 2SD1719 2SD2158 T0-220F
    Text: Transistors Selection Guide by Applications and Functions • Silicon Pow er T ransistors (continued) Applica­ V ceo tion Func­ (V) tions Pa ckage (No.) VcE(sat) lc (A) typ. (V) lc Ib T0-220(a) (D56) (A) (mA) NPN T 0 -2 2 0 F (D 5 9 ) T 0 -2 2 0 E (D 6 3 )


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    PDF T0-220 T0-220F T0-220E T0220D 2SD1474 2SD1719 2SD1755 2SD1776/A 2SD1775/A 2SD2158 2SD2502 2sd2520 2sD2503 2SD2375 2SD1755 zener 3,5 2SD1474 2SD1719 2SD2158

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


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    PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202

    Untitled

    Abstract: No abstract text available
    Text: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors (continued) Applica­ V ceo tion Func­ (V) tions High hre lc (A) Pa ckage (No.) VcE(sat) typ. (V) lc Ib (A) (mA) T0-220(a) (D56) NPN T 0 -2 2 0 F (D 5 9 ) T 0 -2 2 0 E (D 6 3 )


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    PDF T0-220 2SD1474 2SD1776/A 2SD2158 2SD1775/A 2SD1719 2SD1336/A 2SB1108 2SB1193 2SD1608

    D1274A

    Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
    Text: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691


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    PDF 2SC4627 2SC5021 -2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 2SD2345 D1274A B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398