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    Panasonic Electronic Components 2SD12580PL

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    Quest Components 2SD12580PL 677
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    2SD1258 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD1258 Panasonic NPN Transistor Original PDF
    2SD1258 Panasonic Silicon NPN triple diffusion planar type Original PDF
    2SD1258 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1258 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1258 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1258P Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SD1258P Panasonic Silicon NPN Triple Diffusion Planar Type Power Transistor Original PDF
    2SD1258Q Panasonic Silicon NPN Triple Diffusion Planar Type Power Transistor Original PDF

    2SD1258 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1258 Silicon NPN triple diffusion planar type Unit: mm Rating Unit Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) VCBO 200 V VCEO 150 V Emitter-base voltage (Collector open)


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    PDF 2002/95/EC) 2SD1258

    2SD1258

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1258 Silicon NPN triple diffusion planar type Unit: mm 6.0±0.2 1.0±0.1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)


    Original
    PDF 2002/95/EC) 2SD1258 2SD1258

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1258 Silicon NPN triple diffusion planar type Unit: mm Rating Unit Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) VCBO 200 V VCEO 150 V Emitter-base voltage (Collector open)


    Original
    PDF 2002/95/EC) 2SD1258

    2SD1258

    Abstract: No abstract text available
    Text: Power Transistors 2SD1258 Silicon NPN triple diffusion planar type ● ● 1.5±0.1 1.0±0.1 1.1max. 2.0 1.5max. High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to


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    PDF 2SD1258 2SD1258

    2SD1258

    Abstract: No abstract text available
    Text: Power Transistors 2SD1258 Silicon NPN triple diffusion planar type ● ● 1.5±0.1 1.0±0.1 1.1max. 2.0 1.5max. High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to


    Original
    PDF 2SD1258 2SD1258

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1258 Silicon NPN triple diffusion planar type Unit: mm Rating Unit Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) VCBO 200 V VCEO 150 V Emitter-base voltage (Collector open)


    Original
    PDF 2002/95/EC) 2SD1258

    2SD1258

    Abstract: No abstract text available
    Text: Power Transistors 2SD1258 Silicon NPN triple diffusion planar type Unit: mm Rating Unit Collector-base voltage Emitter open Collector-emitter voltage (Base open) VCBO 200 V VCEO 150 V Emitter-base voltage (Collector open) VEBO 6 V Collector current IC 1


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    PDF 2SD1258 2SD1258

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    TIP290

    Abstract: 2N4001 diode MJ029C 2SC1624Y TIP-290 2N2202 BDY66 2SC16250 2N2204 TO-202AC
    Text: POWER SILICON NPN Item Number Part Number I e 5 10 15 20 >= 30 BC618l 2N2405 2N2405S 2N2405S oTl1634 2N2611 SSP58C MJ029C b!F~f~4 35 40 BD400 2N2201 2N2202 2N2203 2N2204 2N2988 2N2992 2N2472 ~~~:~~ 45 50 2N2995 STll0 STll05 SVT100-5 DTl1654 2N5681 2N4001


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    PDF O-220var OT-186 O-220 O-220AB TIP290 2N4001 diode MJ029C 2SC1624Y TIP-290 2N2202 BDY66 2SC16250 2N2204 TO-202AC

    diode 2U 66

    Abstract: STI3007 diode 2U 55 2u 85 diode STI-3007 diode 2U SSP60B STH506 2N3741 MOTOROLA 2sc2317
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO Of) (A) hFE fT ICBO Max PD ON) Min (Hz) (A) Max r Max (s) (CE)Mt 'oper Max (Ohms) Max (°C) 600m 600m 175 175 140 140 J J J J 140 175 140 140 175 J J J J J Package Style Devices 20 Watts or More, (Cont'd)


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    PDF 2N3741 2N3741A BDT30B SSP58B SSP60B TIP30B 2N4920 2N4923 2SB954A diode 2U 66 STI3007 diode 2U 55 2u 85 diode STI-3007 diode 2U STH506 2N3741 MOTOROLA 2sc2317

    2SD1204

    Abstract: 2SD1202 2SD1278 2SD1227 2SD1300 2SD1225 2SD1297 equivalent 2sd1285 2SD1240 2SD1201
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 100W 2SD1201 500 7 10A 150 100 3 10A (Tc=25ºC) 100W 2SD1202


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    PDF 2SD1201 2SD1202 2SD1203 2SD1204 2SD1205 20002SD1205A 2SD1206 2SB894 2SD1207 2SD1208 2SD1204 2SD1202 2SD1278 2SD1227 2SD1300 2SD1225 2SD1297 equivalent 2sd1285 2SD1240 2SD1201

    2SD1258

    Abstract: No abstract text available
    Text: Power Transistors 2SD1258 2SD1258 Silicon NPN Triple-Diffused Planar Type Package Dimensions High DC Current Gain hFe , Power Amplifier • Features • High DC current gain (Iife) • Good linearity of DC current gain (hra) • “N Type” package configuration with a cooling fin for direct soldering


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    PDF 2SD1258 100-c 2SD1258

    2SD1258

    Abstract: No abstract text available
    Text: Power Transistors 2SD1258 2SD1258 Silicon NPN Triple-Diffused Planar Type High DC Current Gain I v e , • Package Dimensions Power Amplifier ■ Features • High DC c u rre n t gain (Iif e ) • Good linearity of DC c u rre n t gain (hra) • “N T y p e” package configuration with a cooling fin for direct soldering


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    PDF 2SD1258 2SD1258

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    B1548

    Abstract: 2SB1299A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors Application Functions VcEO lc (V) (A) lc !b (V) (A) (mA) T0-220(a) (D56) NPN TO-220F (D59) PNP ; NPN 1 < l 1 125 2SB954/A 60/80 2 < 2 2 200 2SB1052 < 1 2 400 < 1 2 200


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    PDF T0-220 O-220F 2SB954/A 2SB1052 2SD1480 2SD1265/A O-220E T0220D 2SB1169/A 2SB1170 B1548 2SB1299A

    B938A

    Abstract: B939A 2SK1967 2SD1316
    Text: N Type Package h Transistors Outline U n it I mm 6.7max 3.7max 6 5max ,1.1 ma» mm. m N5Ü' 'f "j 'T - v U s « S <D7V> h £454' ä IZ m & m à 7 1 0 - 220« ^ « ^ li lJj j J 7 7 f 7 ^ ' ^ - v T ' î o • f t fi5i.8.4 S r I ; -Ö- 08±0, RO.S/^i ! I R 0.5


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    PDF O-220 2SK1967- 2SK782- 2SK1308/A- 2SK1846- B938A B939A 2SK1967 2SD1316

    2sd2520

    Abstract: 2SD2501 2SD2502 2sD2503 2SD1327 2SD1755
    Text: Transistors Selection Guide by Applications and Functions •Silicon Power Transistors (continued) Applica­ tion Func­ tions V ceo (V) lc (A) Package (No.) VcE(sat) typ. (V) lc Ib TO-220(a) (D52) T0-220F(D55) T0-220E(D59) T0-220D(D58) N Type (D42) PNP


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    PDF O-220 T0-220F T0-220E T0-220D 2SD1719 2SD1775/A 2SD1755 2SB1195 2SD1634 2SD1336/A 2sd2520 2SD2501 2SD2502 2sD2503 2SD1327 2SD1755

    2sD1555

    Abstract: 2SD4391 2SM583 2SD1483 2SD1554 2SD1994A D1866 2SD1164 2SD1347 2SD2404
    Text: - 252 - m tt £ T y p e No. € M a nuf. Z * SANYO He ^ TOSHIBA 2SD 1850 tfi T 2SD 1851 H. j=É 2SD 1852 = & 2SD 1 853 ^ H # 2S D 1854 H £ 2S D 1855 O — A 2SC3746 oori • ]occ <¡0 □— A □— A □— A 2SDÌ826 2SD400 2SC3666 2 S D 1857 i m NEC B


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    PDF 2SD1850 2SD1851 2SD1852 2SD1886 2SC2532 2SD1478 2SD892 2SD1698 2SD1697 2SD893 2sD1555 2SD4391 2SM583 2SD1483 2SD1554 2SD1994A D1866 2SD1164 2SD1347 2SD2404

    2SD2502

    Abstract: 2sd2520 2sD2503 2SD2375 2SD1755 zener 3,5 2SD1474 2SD1719 2SD2158 T0-220F
    Text: Transistors Selection Guide by Applications and Functions • Silicon Pow er T ransistors (continued) Applica­ V ceo tion Func­ (V) tions Pa ckage (No.) VcE(sat) lc (A) typ. (V) lc Ib T0-220(a) (D56) (A) (mA) NPN T 0 -2 2 0 F (D 5 9 ) T 0 -2 2 0 E (D 6 3 )


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    PDF T0-220 T0-220F T0-220E T0220D 2SD1474 2SD1719 2SD1755 2SD1776/A 2SD1775/A 2SD2158 2SD2502 2sd2520 2sD2503 2SD2375 2SD1755 zener 3,5 2SD1474 2SD1719 2SD2158

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    PDF

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


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    PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202

    Untitled

    Abstract: No abstract text available
    Text: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors (continued) Applica­ V ceo tion Func­ (V) tions High hre lc (A) Pa ckage (No.) VcE(sat) typ. (V) lc Ib (A) (mA) T0-220(a) (D56) NPN T 0 -2 2 0 F (D 5 9 ) T 0 -2 2 0 E (D 6 3 )


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    PDF T0-220 2SD1474 2SD1776/A 2SD2158 2SD1775/A 2SD1719 2SD1336/A 2SB1108 2SB1193 2SD1608

    D1274A

    Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
    Text: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691


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    PDF 2SC4627 2SC5021 -2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 2SD2345 D1274A B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398