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    2N2405 Search Results

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    2N2405 Price and Stock

    Microchip Technology Inc 2N2405

    TRANSISTOR POWER BJT
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    Mouser Electronics 2N2405 40
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    Microchip Technology Inc 2N2405 22 Weeks
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    Onlinecomponents.com 2N2405
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    NAC 2N2405 17
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    Master Electronics 2N2405
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    Central Semiconductor Corp 2N2405-PBFREE

    TRANS NPN 90V 1A TO39
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    DigiKey 2N2405-PBFREE Bulk 1
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    Central Semiconductor Corp 2N2405

    Transistor GP BJT NPN 90V 1A 3-Pin TO-39 Box - Boxed Product (Development Kits) (Alt: 2N2405)
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    Central Semiconductor Corp 2N2405 PBFREE

    Transistor GP BJT NPN 90V 1A 3-Pin TO-39 Box - Boxed Product (Development Kits) (Alt: 2N2405 PBFREE)
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    Avnet Americas 2N2405 PBFREE Box 37 Weeks, 4 Days 1,000
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    Mouser Electronics 2N2405 PBFREE 981
    • 1 $2.7
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    Central Semiconductor Corp 2N2405 TIN/LEAD

    Transistor GP BJT NPN 90V 1A 3-Pin TO-39 Box - Boxed Product (Development Kits) (Alt: 2N2405 TIN/LEAD)
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    Avnet Americas 2N2405 TIN/LEAD Box 1,000
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    2N2405 Datasheets (49)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N2405 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO39 / Vceo=90 / Ic=1 / Hfe=60-200 / fT(Hz)=- / Pwr(W)=1 Original PDF
    2N2405 Semelab MEDIUM POWER SILICON NPN PLANAR TRANSISTOR Original PDF
    2N2405 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N2405 Central Semiconductor NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Scan PDF
    2N2405 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N2405 Fairchild Semiconductor NPN low power audio frequency transistor. - Pol=NPN / Pkg=TO39 / Vceo=90 / Ic=1 / Hfe=60-200 / fT(Hz)=- / Pwr(W)=1 Scan PDF
    2N2405 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N2405 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
    2N2405 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    2N2405 General Electric Medium power silicon N-P-N planar transistor. - Pol=NPN / Pkg=TO39 / Vceo=90 / Ic=1 / Hfe=60-200 / fT(Hz)=- / Pwr(W)=1 Scan PDF
    2N2405 General Transistor Small Signal Transistor Selection Guide Scan PDF
    2N2405 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N2405 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N2405 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N2405 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N2405 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N2405 Unknown GE Transistor Specifications Scan PDF
    2N2405 Unknown Transistor Replacements Scan PDF
    2N2405 Unknown Transistor Replacements Scan PDF
    2N2405 Unknown Transistor Replacements Scan PDF

    2N2405 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N2405

    Abstract: No abstract text available
    Text: 2N2405 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. • For Operation at Junction Temperature up to 200°C 0.89 max.


    Original
    2N2405 20MHz 2N2405 PDF

    2N2405

    Abstract: transistor 1150
    Text: 2N2405 Medium Power Silicon N-P-N Planar Transistor. 11.50 Transisto. 1 of 1 Home Part Number: 2N2405 Online Store 2N2405 Diodes M edium Po w er Silic o n N- P- N Planar Trans is to r. Transistors Enter code INTER3 at


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    2N2405 com/2n2405 2N2405 transistor 1150 PDF

    2N2405

    Abstract: No abstract text available
    Text: 2N2405 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. • For Operation at Junction Temperature up to 200°C 0.89 max.


    Original
    2N2405 O-205AD) 2N2405 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2405 w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2405 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER TO-39 CASE


    Original
    2N2405 2N2405 150mA, 150mA 20MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: ., fine. 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N2405 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm (inches) FEATURES • For Operation at Junction Temperature up


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    2N2405 300jis 20MHz PDF

    TIP290

    Abstract: 2N4001 diode MJ029C 2SC1624Y TIP-290 2N2202 BDY66 2SC16250 2N2204 TO-202AC
    Text: POWER SILICON NPN Item Number Part Number I e 5 10 15 20 >= 30 BC618l 2N2405 2N2405S 2N2405S oTl1634 2N2611 SSP58C MJ029C b!F~f~4 35 40 BD400 2N2201 2N2202 2N2203 2N2204 2N2988 2N2992 2N2472 ~~~:~~ 45 50 2N2995 STll0 STll05 SVT100-5 DTl1654 2N5681 2N4001


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    O-220var OT-186 O-220 O-220AB TIP290 2N4001 diode MJ029C 2SC1624Y TIP-290 2N2202 BDY66 2SC16250 2N2204 TO-202AC PDF

    2N2405

    Abstract: IN 5358
    Text: 2N2405 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. • For Operation at Junction Temperature up to 200°C 0.89


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    2N2405 O-205AD) 2N2405 IN 5358 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2405 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)120 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)90 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)150m


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    2N2405 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2405S Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)120 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original
    2N2405S PDF

    2N2458

    Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386


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    2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2N479 2N479A 2N2458 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253 PDF

    2n2405

    Abstract: 2N1893
    Text: 4302271 üün7ô3 4 HHAS P o w e r Tran sistors File N u m b e r 34 Medium-Power Silicon N-P-N Planar Transistors 2N1893, 2N2405 I ' 3 3 - 0 5 TERMINAL DESIGNATIONS For S m a ll-S ig n a l A p p lic a tio n s In In d u strial and C o m m e rc ia l E q u ip m e n t


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    2N1893, 2N2405 2N1893 2N2405* 2N2405. 10VOLTS 2n2405 PDF

    Untitled

    Abstract: No abstract text available
    Text: m 2N2405 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N2405 is Designed for General Purpose Amplifier, and Switching Applications. MAXIMUM RATINGS 1.0 A lc 90 V V ce P d is s 1.0 W @ TA = 25 °C P d is s 5.0 W @ Tc = 25 °C T j -65 °C to +200 °C T stg -65 °C to +200 °C


    OCR Scan
    2N2405 2N2405 PDF

    2N2405

    Abstract: C2035
    Text: ÀSII 2N2405 SILICON NPN TRANSISTOR DESCRIPTION: The 2N2405 is Designed for General Purpose Amplifier, and Switching Applications. PACKAGE STYLE TO- 39 MAXIMUM RATINGS Ie 1.O A Vc e 9O V pd is s 1.O W @ Ta " 25 0C pd is s 5.O W @ Te " 25 0C Tj -65 0C to +2OO 0C


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    2N2405 2N2405 C2035 PDF

    2N2405

    Abstract: 2N1893 transistor KD 503 RCA-2N2405 kd 503 transistor TA2235A RCA-ZN1893 TA2235
    Text: G E SOLID STATE 3875081 □ 1 G E S O LI D S TAT E DE I 3Ö7SDÖ1 GD17CHE 5 | ~ 01E 17092 D -T -2 J-Z 3 _mgn-speea rower Transistors File N u m b e r 3 4 Medium-Power Silicon N-P-N Planar Transistors 2N1893, 2N2405 TERMINAL DESIGNATIONS For S m a ll-S ig n a l A p plic a tio n s


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    RCA-ZN1893 2N2405* RCA-2N2405 2N1893 2N2405 2N240S. transistor KD 503 kd 503 transistor TA2235A TA2235 PDF

    2n3053A complementary

    Abstract: 40362 2N4036 BUX40A 40319 2n4314 2N1893 2N2102 2N2270 2N3053
    Text: THOflSON/ D IS T R IB U T O R SÔE D • =102^073 000572b OflO ■ TCSK Bipolar Power Transistors High-Speed Switching h p E at V c e “ 10V V c E » a t 'V C u rren t - mA T yp e No. v CEO<su9> V vc er (* u ) Pt w V 7W max 2N2102 FA M ILY (n-p-n) 2N697


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    a00S72b 2N2102 2N4036 120MHz 2N697 2N1613 2N3053 2N2270 T0205AD/ 2N3053A 2n3053A complementary 40362 BUX40A 40319 2n4314 2N1893 PDF

    Untitled

    Abstract: No abstract text available
    Text: niCRO ELECTRONICS LTD SIE » • bDT17ôô ODGlOflT =153 ■ HEHK Medium Power Amplifiers and Switches TYPE NO. POLARITY T-27-01 CASE H MAXIM UM RATINGS Pd ImW 'c A) V CEO (V) FE V CE(SAT) ’c min max Im A) VCE (V) max 'c (V) (A) fT min Cob COMPLE­ max


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    bDT17Ã T-27-01 2N4036 2N2017 2N2049 2N2102 2N2102A 2N2192 2N2192A 2N2192B PDF

    TO-39 1000 V

    Abstract: No abstract text available
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


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    BC108 ZT180 ZT187 2N706A 2N706 BCY57 BSY95A TO-39 1000 V PDF

    bc140

    Abstract: 2n1711 complement 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88
    Text: NPN GENERAL PURPOSE TA B LE1 NPN SILICON PLANAR G EN ER A L P U R P O S E T R A N S IST O R S The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,


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    BCY79 2N929 2N930 2N2219A 2N2905A 2N2222A 2N2907A ZT181 ZT182 BCY58 bc140 2n1711 complement 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 PDF

    bc140

    Abstract: 2N2405 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


    OCR Scan
    BC160 BFY50 2N1613 2N1711 ZT211 BCY65E BCY77 2N2270 ZT210 bc140 2N2405 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 PDF

    2N310B

    Abstract: 2N2270
    Text: General Transistor Corporation SMALL SIGNAL TRANSISTORS NPN General Purpose Ptol mW VCEO VCER* M 2N718A 2N720A 2N915 2N916 500 500 500 500 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N1613 2N1711 Typt No. VCE(SAT) hFEO c Ir (MHz) UNMAX (•AI (V) MAX 50*


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    2N718A 2N720A 2N915 2N916 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N310B 2N2270 PDF

    2N3568

    Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
    Text: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545


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    2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N3568 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224 PDF

    40409

    Abstract: 40361 40317 40314 40323 2n2102 2n697a 40311 40407 40814
    Text: 2N2102 FA M ILY [n-p-n] silicon f r = 120 MHz min; Py = 5 W max V R E (s a t)- V V p p (ia t)- V DESCRIPTION V C E O (sus) 2N TYPES V V V Tem p. -°c Curren t- m A V C E R<»U*) V C E V (sus) 0.01 0.1 10 50 150 - - - 'c 'C B •c 'b mA mA 1.5 150 15 1.3


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    2N2102 2N697 2N699 2N1613 2N1711 2N1893 2N3053 2N2102 40409 40361 40317 40314 40323 2n697a 40311 40407 40814 PDF

    BC338C

    Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


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    MPSA55 ZTX750 ZTX550 BC327A BC327B BC327C BC328A BC328B BC328C BC338C 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 PDF

    2N2310

    Abstract: 2N2102A 2N2351 2N1990 T046 2N2309 2N2243 2N2193B 2N2193A 2N2311
    Text: Transistors Cont. Discrete Devices Genera Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N1990 2IM2008 VCB Volts VCE Volts NPN 600 100 _ NPN 175 110 VEB Volts 3 8 H f e @ 'C VçE(Sat) @ lc / 'B


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    2N1990 2N2008 2N2102 2N2102A 2N2192 2N2192A 2N2192B 2N2193 150/151A 2N2352 2N2310 2N2351 T046 2N2309 2N2243 2N2193B 2N2193A 2N2311 PDF