Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SD1256 Search Results

    2SD1256 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD1256 Kexin Silicon NPN Epitaxial Planar Type Original PDF
    2SD1256 Panasonic NPN Transistor Original PDF
    2SD1256 Panasonic Silicon NPN epitaxial planar type Original PDF
    2SD1256 TY Semiconductor Silicon NPN Epitaxial Planar Type - TO-252 Original PDF
    2SD1256 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1256 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1256 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1256 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1256 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1256 Panasonic Silicon NPN Epitaxial Planar Type Power Transistor Scan PDF
    2SD1256 Panasonic Silicon Medium Power Transistors Scan PDF
    2SD1256Q Panasonic Silicon NPN Epitaxial Planar Type Power Transistor Original PDF

    2SD1256 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB0933

    Abstract: 2SB933 2SD1256
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0933 (2SB933) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1256 Unit : mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 1.5+0 –0.4 10.0±0.3 1.5±0.1 2 4.4±0.5


    Original     		PDF 2002/95/EC) 2SB0933 2SB933) 2SD1256 2SB0933 2SB933 2SD1256

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SD1256 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Features Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65 -0.1 Large collector current IC.


    Original     		PDF 2SD1256 O-252

    2SD1256

    Abstract: No abstract text available
    Text: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD1256 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Features Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65 -0.1 Large collector current IC.


    Original     		PDF 2SD1256 O-252 2SD1256

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0933 (2SB933) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1256 Unit : mm 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol


    Original     		PDF 2002/95/EC) 2SB0933 2SB933) 2SD1256

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1256 Silicon NPN epitaxial planar type Unit: mm 6.0±0.2 1.0±0.1 Parameter 3.0+0.4 –0.2 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . • Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2SD1256 2SB0933

    2SB0933

    Abstract: 2SB933 2SD1256
    Text: Power Transistors 2SD1256 Silicon NPN epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 130 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 7 V Peak collector current ICP 10 A Collector current IC 5 A Ta=25°C


    Original     		PDF 2SD1256 2SB0933 2SB933 2SD1256

    2SD1256

    Abstract: 2SB0933
    Text: Power Transistors 2SD1256 Silicon NPN epitaxial planar type Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 1.5+0 –0.4 10.0±0.3 1.5±0.1 2 4.4±0.5 • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF 2SD1256 2SB0933 2SD1256 2SB0933

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0933 (2SB933) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1256 Unit : mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 4.4±0.5 10.0±0.3 1.5±0.1 1.5+0 –0.4


    Original     		PDF 2002/95/EC) 2SB0933 2SB933) 2SD1256

    2SB933

    Abstract: 2SD1256
    Text: Power Transistors 2SD1256 Silicon NPN epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 130 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 7 V Peak collector current ICP 10 A Collector current IC 5 A Ta=25°C


    Original     		PDF 2SD1256 2SB933 2SD1256

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1256 Silicon NPN epitaxial planar type Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 4.4±0.5 1.5+0 –0.4 2.0±0.5 0 to 0.4 0.8±0.1 R = 0.5 R = 0.5 2.54±0.3 1.0±0.1 1.4±0.1 0.4±0.1 5.08±0.5 8.5 (6.0) 1.3 3 2 • Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2SD1256 2SB0933

    2SD1256

    Abstract: 2SB0933
    Text: Power Transistors 2SD1256 Silicon NPN epitaxial planar type Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open Collector-emitter voltage (Base open) VCBO 130


    Original     		PDF 2SD1256 2SD1256 2SB0933

    2SD1256

    Abstract: 2SB0933 2SB933
    Text: Power Transistors 2SB0933 2SB933 Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1256 Unit : mm 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130


    Original     		PDF 2SB0933 2SB933) 2SD1256 2SD1256 2SB0933 2SB933

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0933 (2SB933) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1256 Unit : mm 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol


    Original     		PDF 2002/95/EC) 2SB0933 2SB933) 2SD1256

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2SB933

    Abstract: 2SD1256
    Text: Power Transistors 2SB933 Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 –130 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –7 V Peak collector current ICP –10 A Collector current IC


    Original     		PDF 2SB933 120mA 2SB933 2SD1256

    2SB909

    Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125


    Original     		PDF 2SB901 2SB902 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909 2SB910 2SB909 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902

    2SB933

    Abstract: 2SD1256
    Text: Power T ransistors 2SB933 2SB933 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1256 U n it I mm 3.7m ax. • Features . • G o o d lin ea r ity o f D C c u r r e n t g a in l.lm ax * 6.5m ax. • L o w c o lle c t o r - e m itte r sa tu r a tio n v o lta g e VcE<sau


    OCR Scan     		PDF 2SB933 2SD1256 2SB939/A) T32fl5E 2SB933 2SD1256

    Untitled

    Abstract: No abstract text available
    Text: P ow er Tra n sisto rs 2SD125Ó 2SD1256 Silicon NPN Epitaxial Planar Type P a ck age Dim ensions P o w e r Switching Co m p le m e n ta ry Pair with 2SB933 U n it ! i 8 .7 m a x • Fe atures 6.5 max • Low c o lle c to r-e m itte r satu ratio n v o lta g e V ll (Sat


    OCR Scan     		PDF 2SD125Ã 2SD1256 2SB933 001bb4D 2sdt256

    Untitled

    Abstract: No abstract text available
    Text: Power T ransistors 2SB933 2SB933 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1256 Unit ' mm • Features 3.7max 8.7 max. l—- l.lm ax. 6.5max. • Low collector-emitter saturation voltage VcEisao . • Good linearity of DC current gain (Iife)


    OCR Scan     		PDF 2SB933 2SD1256 D01blb3

    2SD1539

    Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
    Text: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5


    OCR Scan     		PDF O-126 O-202 T0-220 O-220F 2SA1605 2SC2258 2SC3063 2SC2923 2SC4714 2SC3942 2SD1539 d53 pnp transistor 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258

    PA8080

    Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
    Text: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)


    OCR Scan     		PDF 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1259A 2SB937 2SD1260 PA8080 2SD1246 2SD1247 2SD1250A 2SD1251

    2SB0774

    Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)


    OCR Scan     		PDF O-126 2SC2258 2SC3063 2SC5340 O-202 T0-220 O-220F 2SC2923 2SC4714 2SC3942 2SB0774 2SA2004 2SB160 2SB642

    2SC4714

    Abstract: 2SA1817 2SD1539 2SA1605 2SC2258 2SC2923 2SC3063 2SC3942 2SC3945 2SC4717
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D 5 2 *, D53) U Type (D41) MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F


    OCR Scan     		PDF O-126 D52SK, O-202 T0-220 O-220F 2SA1605 2SC2258 2SC3063 2SC2923 2SC4714 2SA1817 2SD1539 2SA1605 2SC2258 2SC3063 2SC3942 2SC3945 2SC4717

    2SC4159

    Abstract: 2SC3358 2SC2914 2sc2724 2sc3153 2sc3158 2sc3277 2SC2839 2SD641 2SC 3298
    Text: - m € Type No. 2SC 3295.*, 2SC 3296 2SC 329L* 2SC 3298 . • 2SC 3298A 2SC 3298B 2SC 3299 2SC 3300 ^ 2SC 3301 ✓ 2SC 3302 y 2SC 3303 , 2SC 3304 2SC 3305 ^ 2SC 3306 ✓ 2SC 3307 . 2SC 3308 2SC 3309 ✓ 2SC 3310 ^ 2SC 3311 . 2SC 3312 2SC 3313 2SC 3314 ^


    OCR Scan     		PDF 2SC3689 2SD801 2SD1459 2SD1587 2SD1264 2SDI763A 2SD1348 2SC1173 2SD1444 2SD1762 2SC4159 2SC3358 2SC2914 2sc2724 2sc3153 2sc3158 2sc3277 2SC2839 2SD641 2SC 3298