2SB933 Search Results

2SB933

Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB933 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-emitter saturation voltage VCE sat . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127

2SB0933

Abstract: 2SB933 2SD1256
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0933 (2SB933) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1256 Unit : mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 1.5+0 –0.4 10.0±0.3 1.5±0.1 2 4.4±0.5

2SB933

Abstract: 2SD1256
Contextual Info: Power Transistors 2SB933 Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 –130 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –7 V Peak collector current ICP –10 A Collector current IC

2SB933

Abstract: 2SD1256
Contextual Info: Power T ransistors 2SB933 2SB933 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1256 U n it I mm 3.7m ax. • Features . • G o o d lin ea r ity o f D C c u r r e n t g a in l.lm ax * 6.5m ax. • L o w c o lle c t o r - e m itte r sa tu r a tio n v o lta g e VcE<sau

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0933 (2SB933) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1256 Unit : mm 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0933 (2SB933) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1256 Unit : mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 4.4±0.5 10.0±0.3 1.5±0.1 1.5+0 –0.4

Contextual Info: P ow er Tra n sisto rs 2SD125Ó 2SD1256 Silicon NPN Epitaxial Planar Type P a ck age Dim ensions P o w e r Switching Co m p le m e n ta ry Pair with 2SB933 U n it ! i 8 .7 m a x • Fe atures 6.5 max • Low c o lle c to r-e m itte r satu ratio n v o lta g e V ll (Sat

Contextual Info: Product specification 2SB933 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-emitter saturation voltage VCE sat . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1

2SD1256

Abstract: 2SB0933 2SB933
Contextual Info: Power Transistors 2SB0933 2SB933 Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1256 Unit : mm 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130

2SD7256

Abstract: 2SB933 2SD125 2SD1256 L135 H15N
Contextual Info: P o w e r T ra n s is to rs 2SD125Ó 2S D 1256 Silicon NPN Epitaxial Planar Type Package D im ensions Power Sw itching C om plem entary Pair with 2SB933 U nit ! mm • Features 8.7 r • L o w c o l l e c to r - e m itte r s a tu r a t io n v o lta g e V Lt (Sat

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0933 (2SB933) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1256 Unit : mm 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol

2SB0933

Abstract: 2SB933 2SD1256 2sd1256 transistor
Contextual Info: Power Transistors 2SB0933 2SB933 Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 –130 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –7 V Peak collector current ICP –10 A Collector current

Contextual Info: Power T ransistors 2SB933 2SB933 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1256 Unit ' mm • Features 3.7max 8.7 max. l—- l.lm ax. 6.5max. • Low collector-emitter saturation voltage VcEisao . • Good linearity of DC current gain (Iife)

2SD1539

Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
Contextual Info: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

PA8080

Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
Contextual Info: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)

2SB5950

Abstract: B0540C to-53 2SB595-0 B0242c 2N3186 2N3198
Contextual Info: POWER SILICON PNP Item Number Part Number I C} 5 -10 20 2SB1270 2SB9200 2SA1293 2N5005 2N5153 2N5153S 2N5609 2N5617 See Index NthAmerSemi Semelab SGS-Ates NthAmerSemi NEC Corp JA See Index Matsushita Matsushita Matsushita ~emel~ ToshibaCorp Sanyo Elect Sanyo Elect

D2SBA60

Abstract: 2SD1515 2SC3259 2SC3261 S1WB40 SRT-2W6H 2SC4530 2SC3262 2SC2789 S12KC20
Contextual Info: List of Discontinued Parts The discontinued parts are as follows. The characteristics and performance of replacement parts are almost the same, but they are not identical in all respects. Therefore, we ask you to study the details shown in the list carefully when using the parts.

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

A1534

Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin

2SC4714

Abstract: 2SA1817 2SD1539 2SA1605 2SC2258 2SC2923 2SC3063 2SC3942 2SC3945 2SC4717
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D 5 2 *, D53) U Type (D41) MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F

2SA1302 TOSHIBA

Abstract: 2SA1302 Toshiba 2Sa1302 SB 1156 2sb817 2SB863 2SB1371 mitsubishi 1183 2SB1407 2SB1201
Contextual Info: - 64 - S € Type No. tt « Manuf. H # SANYO M S TOSHIBA S NEC S ÏZ HITACHI 8 ± Ü FUJITSU fé T MATSUSHITA 2SB 1 1 4 « fé T 2SB 1149— ' « 2S6 1151 , B « 2SB1165 2SB 1152 «5 T 2SB817 2SB 1153 fé T 2SB 1155" fâ T 2SB 1156 - fé T 2SB 1157 fé T 2SB776