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    2SD101 Price and Stock

    Amphenol Aerospace JT06RP-24-2SD(101)

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    Amphenol Aerospace JT07RE-22-2SD(101)

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    Amphenol Aerospace JT00RE-24-2SD(101)

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    Amphenol Aerospace JT00RE-20-2SD(101)

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    Amphenol Aerospace JT07RP-24-2SD(101)

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    2SD101 Datasheets (84)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD101 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD101 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD101 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD101 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD101 Unknown Vintage Transistor Datasheets Scan PDF
    2SD101 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SD101 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD101 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD101 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1010 Panasonic Silicon NPN epitaxial planer type Original PDF
    2SD1010 Panasonic NPN Transistor Original PDF
    2SD1010 Panasonic Silicon NPN epitaxial planer type Original PDF
    2SD1010 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1010 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1010 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD1010 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1010 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD1010 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1010 Unknown Cross Reference Datasheet Scan PDF
    2SD1010 Unknown Shortform Transistor PDF Datasheet Short Form PDF

    2SD101 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB187

    Abstract: 2SB178 2sd118 2SD188 2SD128 2SD111 2SB178A 2SD123 2SD104 2SD105
    Text: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc Tj (V) (V) (mA) (mW) (ºC) 2SD101 80 6 600 250 75 2SD102 110 10 3A 25W(Tc=25ºC) 150 2SD103 80 10 3A 25W(Tc=25ºC) 150 2SD104 20 6 400 150 75 2SD105 20 6 400 150 75 2SD106 2SD107 80 10 5A 50W(Tc=25ºC) 150


    Original     		PDF 2SD101 2SD102 2SD103 2SD104 2SD105 2SD106 2SD107 2SD108 2SD109 2SD110 2SB187 2SB178 2sd118 2SD188 2SD128 2SD111 2SB178A 2SD123 2SD104 2SD105

    2SD1010

    Abstract: 2sd101
    Text: Transistors 2SD1010 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 • Features 0.7±0.2 M Di ain sc te on na tin nc ue e/ d • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE sat


    Original     		PDF 2SD1010 2SD1010 2sd101

    2SD1010

    Abstract: No abstract text available
    Text: Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0±0.2 ● ● ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat . High emitter to base voltage VEBO. Low noise voltage NV.


    Original     		PDF 2SD1010 2SD1010

    2SC536E

    Abstract: 2SC536E,F sanyo 2SC536e R1820 2SB808 2SA60 2SD1012 ITR08383 ITR08384 ITR08385
    Text: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter


    Original     		PDF ENN676D 2SB808/2SD1012 2SB808/2SD1012] 2SB808 2SC536E 2SC536E,F sanyo 2SC536e R1820 2SB808 2SA60 2SD1012 ITR08383 ITR08384 ITR08385

    2SD1012

    Abstract: 2SA608 transistor 2sa608 2SB808
    Text: Ordering number:676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033 [2SB808/2SD1012] B : Base C : Collector E : Emitter : 2SB808 Specifications SANYO : SPA Absolute Maximum Ratings at Ta = 25˚C


    Original     		PDF 2SB808/2SD1012 2SB808/2SD1012] 2SB808 2SD1012 2SA608 transistor 2sa608 2SB808

    2SD1010

    Abstract: No abstract text available
    Text: Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0±0.2 ● • Absolute Maximum Ratings 0.7±0.1 Ta=25˚C 0.45+0.15 Ð0.1 2.5+0.6 Ð0.2 Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage


    Original     		PDF 2SD1010 2SD1010

    Untitled

    Abstract: No abstract text available
    Text: 2SD1012 Ordering number : EN0676F SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SD1012 Low-Voltage Large-Current Amplifier Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage


    Original     		PDF 2SD1012 EN0676F

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SD1010 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur


    Original     		PDF 2SD1010

    Untitled

    Abstract: No abstract text available
    Text: 2SD1012 Ordering number : EN0676F SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SD1012 Low-Voltage Large-Current Amplifier Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage


    Original     		PDF EN0676F 2SD1012 2SD1012G-SPA 2SD1012G-SPA-AC 2SD1012F-SPA 2SD1012F-SPA-AC SC-72

    2sd1011

    Abstract: No abstract text available
    Text: Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0±0.2 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat . High emitter to base voltage VEBO. • Absolute Maximum Ratings


    Original     		PDF 2SD1011 2sd1011

    2SC536E

    Abstract: 2SA608e 2SC536E,F sanyo 2SC536e 2sd1100 2SB808 2SD1012 ITR08383 ITR08384 ITR08385
    Text: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter


    Original     		PDF ENN676D 2SB808/2SD1012 2SB808/2SD1012] 2SB808 2SC536E 2SA608e 2SC536E,F sanyo 2SC536e 2sd1100 2SB808 2SD1012 ITR08383 ITR08384 ITR08385

    2SD1010

    Abstract: No abstract text available
    Text: Transistors 2SD1010 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 4.0±0.2 M Di ain sc te on na tin nc ue e/ d 5.0±0.2 5.1±0.2 • Features 0.7±0.2 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low


    Original     		PDF 2SD1010 2SD1010

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN0676F 2SD1012 Bipolar Transistor 15V, 0.7A, Low VCE sat , NPN Single SPA http://onsemi.com Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage


    Original     		PDF EN0676F 2SD1012

    2SD808

    Abstract: 2sb transistor 2sb808 2SC536e 2SA608e
    Text: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter


    Original     		PDF ENN676D 2SB808/2SD1012 2SB808/2SD1012] 2SB808 2SD808 2sb transistor 2sb808 2SC536e 2SA608e

    2SD1010

    Abstract: No abstract text available
    Text: Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0±0.2 ● ● ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat . High emitter to base voltage VEBO. Low noise voltage NV.


    Original     		PDF 2SD1010 2SD1010

    2SD1010

    Abstract: k405
    Text: Transistors 2SD1010 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 5.0±0.2 4.0±0.2 • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE sat • High emitter-base voltage (Collector open) VEBO


    Original     		PDF 2SD1010 2SD1010 k405

    2sd1011

    Abstract: No abstract text available
    Text: Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification M Di ain sc te on na tin nc ue e/ d Unit: mm ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat . High emitter to base voltage VEBO.


    Original     		PDF 2SD1011 2sd1011

    2SB608

    Abstract: 2SC536 DS442X 2SD1012F 2SA608 2SC536E transistor 2sa608 sanyo 2SC536e 2SD1012 2SA60
    Text: j Ordering number: EN 676D 2SB808/2SD1012 PNP/ NPN Epitaxial Planar Silicon Transistors N0.676D Low-Voltage Large-Current _ Amp Applications I2SB808 Absolute Maximum Ratings at Ta=25 C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


    OCR Scan     		PDF 2SB808/2SD1012 I2SB808 2SB608 2SC536 DS442X 2SD1012F 2SA608 2SC536E transistor 2sa608 sanyo 2SC536e 2SD1012 2SA60

    2SD1015

    Abstract: 2SD101 veco
    Text: SONY 2SD1015 Silicon NPN LEC Symmetry Transistor • ï —? [I]$5ÆiJfPx Ti-U 7 f • V c e o / V ECO, V ECO ^ 50 V • V C E s a t ' V E C (sat) < 0 . 5 V a t ¡C = J ^ ® hpE» hp er 150 ^ 1500 Absolute Maximum Ratings Ta = 25°C Symbol 2SD1015 Collector-to-Base Voltage


    OCR Scan     		PDF 2SD1015 2SD1015 2SD101 veco

    Untitled

    Abstract: No abstract text available
    Text: | Ordering number: EN 6 7 6 P SA%YO i l _ 2SB808/2SD1012 PNP/ NPN Epitaxial Planar Silicon Transistors No.676D Low-Voltage Large-Current _Amp Applications : 2SB808 Ta=25 °C C o lle c to r to Base V o ltag e vCBO C o lle c to r to E m itte r V o ltag e


    OCR Scan     		PDF 2SB808/2SD1012 2SB808 2SD1012) 400Hz

    2SD1017

    Abstract: 2SD101
    Text: 2S D 1017 2SD1017 N P N = m * £ « t ^ '> y □ "s ' h ~7 NPN Silicon Triple Diffused Transistor ss ? — ? n ; w * m « i ih a * Color TV l w Re9"""or 0u,c“, *1- [2I/PACKAGE DIMENSIONS o [Mjütü X" Jb ò o Vceo —250 V Unit : mm o j  & g ^ s t â i i f t ^ e s æ - c s í . , - r -yX > r ^ m .


    OCR Scan     		PDF 2SD1017 PnTr-25 Test/PWS350 2SD1017 2SD101

    MG30G1BL3

    Abstract: MG50G1BL3 669a h 669A MG50G1BL3 toshiba 2SD427 2SCI815 2SD650 2SD649 2SD646A
    Text: - m « Type No. tt « Manuf. = B ;¥ SANYO TOSHIBA K s 2SD 646 — • Ä $ MG50G1BL3 2SD 646A M $ MG30G1BL3 2SD 647 K 2: 2SD647A 2SD 648 Ä 3* 2SD648A 2SD 649 * 2 2SD 650 - s a 2SD 654 3 * 2SD545 2SD 655 . B ÎL 2SD1012 2SD 656 Ä S 2SD 657 * $ 2SD 661 fâ


    OCR Scan     		PDF 2SD645 2SD646 2SD646A 2SD647 2SD648 2SD649 2SD650 2SD654 2SD655 2SD656 MG30G1BL3 MG50G1BL3 669a h 669A MG50G1BL3 toshiba 2SD427 2SCI815

    2SD1018

    Abstract: 2sd101
    Text: SEC NPN SILICON POWER TRANSISTOR ELECTRON DEVICE 2SD1018 DESCR IPTIO N The 2SD1018 is NPN silicon trip le diffused transistor designed fo r use power supplies o f 90° and 110° colour PACKAGE D IM EN SIO N S in m illim e te rs inches and black and w h ite T V receivers.


    OCR Scan     		PDF 2SD1018 2SD1018 2sd101

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1