Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    ITR08384 Search Results

    ITR08384 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC536E

    Abstract: 2SC536E,F sanyo 2SC536e R1820 2SB808 2SA60 2SD1012 ITR08383 ITR08384 ITR08385
    Text: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter


    Original
    PDF ENN676D 2SB808/2SD1012 2SB808/2SD1012] 2SB808 2SC536E 2SC536E,F sanyo 2SC536e R1820 2SB808 2SA60 2SD1012 ITR08383 ITR08384 ITR08385

    Untitled

    Abstract: No abstract text available
    Text: 2SD1012 Ordering number : EN0676F SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SD1012 Low-Voltage Large-Current Amplifier Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage


    Original
    PDF 2SD1012 EN0676F

    Untitled

    Abstract: No abstract text available
    Text: 2SD1012 Ordering number : EN0676F SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SD1012 Low-Voltage Large-Current Amplifier Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage


    Original
    PDF EN0676F 2SD1012 2SD1012G-SPA 2SD1012G-SPA-AC 2SD1012F-SPA 2SD1012F-SPA-AC SC-72

    2SC536E

    Abstract: 2SA608e 2SC536E,F sanyo 2SC536e 2sd1100 2SB808 2SD1012 ITR08383 ITR08384 ITR08385
    Text: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter


    Original
    PDF ENN676D 2SB808/2SD1012 2SB808/2SD1012] 2SB808 2SC536E 2SA608e 2SC536E,F sanyo 2SC536e 2sd1100 2SB808 2SD1012 ITR08383 ITR08384 ITR08385

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN0676F 2SD1012 Bipolar Transistor 15V, 0.7A, Low VCE sat , NPN Single SPA http://onsemi.com Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage


    Original
    PDF EN0676F 2SD1012

    2SD808

    Abstract: 2sb transistor 2sb808 2SC536e 2SA608e
    Text: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter


    Original
    PDF ENN676D 2SB808/2SD1012 2SB808/2SD1012] 2SB808 2SD808 2sb transistor 2sb808 2SC536e 2SA608e