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    Toshiba America Electronic Components 2SC4881(CANO,F,M)

    TRANS NPN 50V 5A TO220NIS
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    Toshiba America Electronic Components 2SC4881,LS1SUMIF(M

    TRANS NPN 50V 5A TO220NIS
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    2SC4881 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC4881 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SA1931 Original PDF
    2SC4881 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC4881 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC4881 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC4881 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC4881 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC4881 Toshiba Silicon NPN transistor for high current switching applications Scan PDF
    2SC4881 Toshiba NPN Transistor Scan PDF
    2SC4881 Toshiba TRANSISTOR SILICON NPN EPITAXIAL TYPE Scan PDF
    2SC4881,LS1SUMIF(M Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 5A 50V TO220-3 Original PDF
    2SC4881(CANO,F,M) Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 5A 50V TO220-3 Original PDF
    2SC4881(F) Toshiba 2SC4881 - TRANSISTOR NPN 50V 5A TO-220 Original PDF

    2SC4881 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A1931

    Abstract: transistor a1931 2SA1931 2SC4881
    Text: 2SA1931 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT PROCESS 2SA1931 High-Current Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = −0.4 V (max) • High-speed switching time: tstg = 1.0 s (typ.) • Complementary to 2SC4881


    Original     		PDF 2SA1931 2SC4881 A1931 transistor a1931 2SA1931 2SC4881

    c4881

    Abstract: 2SC4881 2SC4881,C4881,2SC4881-Y
    Text: 2SC4881 東芝トランジスタ シリコンNPNエピタキシャル形 2SC4881 ○ 大電流スイッチング用 単位: mm • コレクタ•エミッタ間飽和電圧が低い。: VCE sat = 0.4 V (最大) • スイッチング時間が速い。 : Tstg = 0.8 s (標準)


    Original     		PDF 2SC4881 2-10R1A 20070701-JA c4881 2SC4881 2SC4881,C4881,2SC4881-Y

    Untitled

    Abstract: No abstract text available
    Text: 2SC4881 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4881 High-Current Switching Applications • Low saturation voltage: VCE sat = 0.4 V (max) • High-speed switching: tstg = 0.8 µs (typ.) Unit: mm Maximum Ratings (Tc = 25°C) Characteristics Symbol


    Original     		PDF 2SC4881

    transistor C4881

    Abstract: c4881
    Text: 2SC4881 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4881 High-Current Switching Applications • Low saturation voltage: VCE sat = 0.4 V (max) • High-speed switching: tstg = 0.8 µs (typ.) Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SC4881 2-10R1A transistor C4881 c4881

    transistor a1931

    Abstract: a1931
    Text: 2SA1931 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT PROCESS 2SA1931 High-Current Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = −0.4 V (max) • High-speed switching time: tstg = 1.0 µs (typ.) • Complementary to 2SC4881


    Original     		PDF 2SA1931 2SC4881 SC-67 2-10R1A transistor a1931 a1931

    transistor a1931

    Abstract: a1931 2SA1931 2SC4881
    Text: 2SA1931 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT PROCESS 2SA1931 High-Current Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = −0.4 V (max) • High-speed switching time: tstg = 1.0 µs (typ.) • Complementary to 2SC4881


    Original     		PDF 2SA1931 2SC4881 transistor a1931 a1931 2SA1931 2SC4881

    transistor C4881

    Abstract: c4881 2SC4881
    Text: 2SC4881 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4881 High-Current Switching Applications • Low saturation voltage: VCE sat = 0.4 V (max) • High-speed switching: tstg = 0.8 µs (typ.) Unit: mm Maximum Ratings (Tc = 25°C) Characteristics Symbol


    Original     		PDF 2SC4881 transistor C4881 c4881 2SC4881

    c4881

    Abstract: transistor C4881 2SC4881
    Text: 2SC4881 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4881 High-Current Switching Applications • Low saturation voltage: VCE sat = 0.4 V (max) • High-speed switching: tstg = 0.8 s (typ.) Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SC4881 c4881 transistor C4881 2SC4881

    2SC4881

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC4881 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector


    Original     		PDF 2SC4881 O-220F O-220F) 2SC4881

    2SC4881

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4881 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 50V(Min) ·High Switching Speed ·Low Collector Saturation Voltage: VCE(sat)= 0.4V(Max)@ (IC= 2.5A, IB= 125mA)


    Original     		PDF 2SC4881 125mA) 125mA 125mA, 2SC4881

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


    Original     		PDF BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC4881 U nit in mm HIGH C U R R EN T SW IT C H IN G A PPLIC A TIO N S. 10 + 0.3 • • 2 1 ±0 .2 ¿ 3 2 + 0 ,? Low Saturation Voltage : VCE sat = 0.4V (MAX.) (IC = 2.5A, IB = 125mA) High Speed Sw itching Time : tgt,g = 0.8/iS (Typ.)


    OCR Scan     		PDF 2SC4881 125mA) 125mA 20/vs 125mA,

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4881 T O S H IB A TR A N SISTO R SILICO N NPN E P ITA X IA L TYPE 2SC4881 Unit in mm H IG H CU R R EN T S W IT C H IN G A P P L IC A T IO N S . • • 10 t 0.3 Low Saturation Voltage : VCE sat = 0.4V (MAX.) High Speed Switching Time : tstg = 0.8^8 (Typ.)


    OCR Scan     		PDF 2SC4881 961001EAA2'

    C 2577

    Abstract: 2SC4881 C 2577 transistor
    Text: TO SH IBA 2SC4881 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4881 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • • Low Saturation Voltage : VCE sat = °-4V (MAX.) High Speed Switching Time : tstg = 0.8 jus (Typ.) r 10 ±0.3 o MAXIMUM RATINGS (Te = 25°C)


    OCR Scan     		PDF 2SC4881 C 2577 2SC4881 C 2577 transistor

    2SC4881

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4881 2 S C4 8 8 1 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. • Low Saturation Voltage : VCE sat = 0.4V (MAX.) High Speed Switching Time : tstg = 0.8/¿s (Typ.) • r o SYMBOL CHARACTERISTIC


    OCR Scan     		PDF 2SC4881 961001EAA2' 2SC4881

    2sc4881

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4881 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4881 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 10 +0.3 Low Saturation Voltage : VCE s a t = 0.4V (MAX.) TTicrVi S it-ipp H S w itiO iin cr T im p •* D— c> -"üug = , $ 3.2 ± 0.2


    OCR Scan     		PDF 2SC4881 961001EAA2' 2sc4881

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


    OCR Scan     		PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    2sC5200, 2SA1943, 2sc5198

    Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
    Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428


    OCR Scan     		PDF 2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266