C4684
Abstract: 2SC4684 IC-106 05A800
Text: 2SC4684 東芝トランジスタ シリコンNPNエピタキシャル形 2SC4684 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高い。 : hFE 1 = 800~3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A)
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2SC4684
20070701-JA
C4684
2SC4684
IC-106
05A800
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C4684
Abstract: 2SC4684
Text: 2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) · Low collector saturation voltage
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2SC4684
C4684
2SC4684
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C4684
Abstract: 2SC4684 datasheets 2SC4684
Text: 2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low collector saturation voltage
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2SC4684
C4684
2SC4684 datasheets
2SC4684
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c4684
Abstract: c468 2SC468 2SC4684 datasheets 2SC4684
Text: Transistors SMD Type Silicon NPN Epitaxial 2SC4684 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Features +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65 -0.1 High power dissipation.
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2SC4684
O-252
C4684
c4684
c468
2SC468
2SC4684 datasheets
2SC4684
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Untitled
Abstract: No abstract text available
Text: 2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low collector saturation voltage
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2SC4684
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c4684
Abstract: 2SC4684
Text: 2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low collector saturation voltage
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2SC4684
c4684
2SC4684
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c4684
Abstract: No abstract text available
Text: 2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low collector saturation voltage
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2SC4684
c4684
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Untitled
Abstract: No abstract text available
Text: 2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low collector saturation voltage
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2SC4684
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c4684
Abstract: 2SC4684 2SC4684 datasheets
Text: 2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low collector saturation voltage
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2SC4684
c4684
2SC4684
2SC4684 datasheets
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C4684
Abstract: 2SC4684
Text: 2SC4684 東芝トランジスタ シリコンNPNエピタキシャル形 2SC4684 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高い。 : hFE 1 = 800~3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A)
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2SC4684
C4684
2SC4684
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C4684
Abstract: 2SC4684 0310a
Text: 2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low collector saturation voltage
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2SC4684
C4684
2SC4684
0310a
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STK411-230E
Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
UPC2581V
PAL005A
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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ESM 740
Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.
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SCE0003A
ESM 740
transistor SMD t04 51
D245A
LM2804
transistor SMD t04
Solar Garden Light Controller 4 pin
2fu smd transistor
transistor t04 smd
pnp Octal Darlington Transistor Arrays DIP
WB126
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smd transistor h2a
Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output
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BCE0016C
E-28831
BCE0016D
smd transistor h2a
SMD TRANSISTOR H2A NPN
transistor smd H2A
2sa1943 amplifier circuit diagram
TPCP8L01
2sC5200, 2SA1943
H2A transistor SMD
2sc5200 power amplifiers diagram
MARKING SMD PNP TRANSISTOR h2a
SMD H2A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4684 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4684 STROBE FLASH APPLICATIONS. U n it in mm MEDIUM POWER AMPLIFIER APPLICATIONS. • H igh D C C urrent G ain ' h F E 1 = 800—3200 (V c e = 2V, I c = 0.5A) : hF E (2) —250 (M in .) (V CE = 2V, I C = 4A)
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OCR Scan
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2SC4684
40niA)
95MAX
961001EAA2'
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IC 741 1 PC
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE 2SC4684 ST0R0B0 FLASH APPLICATIONS. Unit in ran MEDIUM POWER AMPLIFIER APPLICATIONS. 6.8 MAX 5.2 ± 0.2 . High DC Current Gain: hFE=800~3200 VcE=2V, Ic=0.5A hFE=250(Min.)(V c e =2V, Ic =4A) in . Low Collector Saturation Voltage
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2SC4684
IC 741 1 PC
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PDF
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2SC4684
Abstract: No abstract text available
Text: TO SH IBA 2SC4684 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SC4684 MEDIUM POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hFE 1 = 800-3200 (Vc e = 2 V, Iq = 0.5 A) : hFE (2) = 250 (Min.) (VCE = 2 V, Iç; = 4 A)
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2SC4684
2SC4684
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PDF
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2SC4684
Abstract: No abstract text available
Text: TO SH IBA 2SC4684 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4684 Unit in mm STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS A 6.8MAX., • • • 5.2 ± 0.2 High DC Current Gain : hFE (i) = 800-3200 (Vce = 2 V, Ic = 0.5 A) : hFE (2) = 250 (Min.) (Vc e = 2 V, Iç = 4 A)
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2SC4684
2SC4684
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4684 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4684 Unit in mm STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hFE l = 800-3200 (Vqe = 2 V, Iß = 0.5 A) : hFE (2) = 250 (Min.) (Vc e = 2 v > IC = 4 A)
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2SC4684
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PDF
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2SC4684
Abstract: No abstract text available
Text: TOSHIBA 2SC4684 T O S H IB A T R A N S IS T O R SIL IC O N N P N E P IT A X IA L TYPE 2SC4684 U n it in m m S T R O B E FLASH A P P L IC A T IO N S M E D IU M P O W E R A M P L IF IE R A P P L IC A T IO N S • H igh DC Current Gain : hFE i = 8 0 0 -3 2 0 0 (V c e = 2 V , I c = 0.5 A)
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2SC4684
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PDF
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2SC4684
Abstract: No abstract text available
Text: TOSHIBA 2SC4684 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4684 Unit in mm STROBE FLASH APPLICATIONS M EDIUM PO W ER AM PLIFIER APPLICATIONS • High DC Current Gain : hFE 1 = 800-3200 (Vce = 2 V, Ic = 0.5 A) : hFE (2) = 250 (Min.) (VCE = 2 V, Iç; = 4 A)
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2SC4684
2SC4684
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15J102
Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811
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2SA949U50VI
2AC2229
2SA1145U50V)
2SC2705(
2SC2230
2SA817A
2SC1627A
2SA1811
2SC4707
2SA965
15J102
Transistor 2SC4288A
Transistor 2SA 2SB 2SC 2SD
Drive IC 2SC3346
2sa 102 transistor
transistor 2SA 101
50J301
02SC5030
T15J103
Driver IC 2SC3346
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2sC5200, 2SA1943, 2sc5198
Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428
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2SA817A
2SA940
2SA949
2SA965
2SA966
2SA1012
2SA1013
2SA1020
2SA1145
2SA1160
2sC5200, 2SA1943, 2sc5198
GTI5Q101
2sc5039
2SC4532
2SD2088
2SC3303
2sC5200, 2SA1943
2SA1803
2sc4408
GT10G102
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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