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    Toshiba America Electronic Components 2SC4684

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    Quest Components 2SC4684 636
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    Sanyo-Denki Co Ltd 2SC4684

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    Quest Components 2SC4684 160
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    Toshiba America Electronic Components 2SC4684(Q)

    Trans GP BJT NPN 20V 5A 3-Pin(2+Tab) New PW-Mold
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    Chip1Stop 2SC4684(Q) 790
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    2SC4684 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC4684 Kexin Silicon NPN Epitaxial Original PDF
    2SC4684 Toshiba NPN Transistor Original PDF
    2SC4684 Toshiba Silicon NPN Transistor Original PDF
    2SC4684 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC4684 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC4684 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC4684 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC4684 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC4684 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC4684 Toshiba Silicon NPN transistor for strobe flash applications and medium power amplifier applications Scan PDF
    2SC4684 Toshiba TRANSISTOR SILICON NPN EPITAXIAL TYPE Scan PDF

    2SC4684 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C4684

    Abstract: 2SC4684 IC-106 05A800
    Text: 2SC4684 東芝トランジスタ シリコンNPNエピタキシャル形 2SC4684 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高い。 : hFE 1 = 800~3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A)


    Original     		PDF 2SC4684 20070701-JA C4684 2SC4684 IC-106 05A800

    C4684

    Abstract: 2SC4684
    Text: 2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) · Low collector saturation voltage


    Original     		PDF 2SC4684 C4684 2SC4684

    C4684

    Abstract: 2SC4684 datasheets 2SC4684
    Text: 2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low collector saturation voltage


    Original     		PDF 2SC4684 C4684 2SC4684 datasheets 2SC4684

    c4684

    Abstract: c468 2SC468 2SC4684 datasheets 2SC4684
    Text: Transistors SMD Type Silicon NPN Epitaxial 2SC4684 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Features +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65 -0.1 High power dissipation.


    Original     		PDF 2SC4684 O-252 C4684 c4684 c468 2SC468 2SC4684 datasheets 2SC4684

    Untitled

    Abstract: No abstract text available
    Text: 2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low collector saturation voltage


    Original     		PDF 2SC4684

    c4684

    Abstract: 2SC4684
    Text: 2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low collector saturation voltage


    Original     		PDF 2SC4684 c4684 2SC4684

    c4684

    Abstract: No abstract text available
    Text: 2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low collector saturation voltage


    Original     		PDF 2SC4684 c4684

    Untitled

    Abstract: No abstract text available
    Text: 2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low collector saturation voltage


    Original     		PDF 2SC4684

    c4684

    Abstract: 2SC4684 2SC4684 datasheets
    Text: 2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low collector saturation voltage


    Original     		PDF 2SC4684 c4684 2SC4684 2SC4684 datasheets

    C4684

    Abstract: 2SC4684
    Text: 2SC4684 東芝トランジスタ シリコンNPNエピタキシャル形 2SC4684 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高い。 : hFE 1 = 800~3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A)


    Original     		PDF 2SC4684 C4684 2SC4684

    C4684

    Abstract: 2SC4684 0310a
    Text: 2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low collector saturation voltage


    Original     		PDF 2SC4684 C4684 2SC4684 0310a

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4684 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4684 STROBE FLASH APPLICATIONS. U n it in mm MEDIUM POWER AMPLIFIER APPLICATIONS. • H igh D C C urrent G ain ' h F E 1 = 800—3200 (V c e = 2V, I c = 0.5A) : hF E (2) —250 (M in .) (V CE = 2V, I C = 4A)


    OCR Scan     		PDF 2SC4684 40niA) 95MAX 961001EAA2'

    IC 741 1 PC

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC4684 ST0R0B0 FLASH APPLICATIONS. Unit in ran MEDIUM POWER AMPLIFIER APPLICATIONS. 6.8 MAX 5.2 ± 0.2 . High DC Current Gain: hFE=800~3200 VcE=2V, Ic=0.5A hFE=250(Min.)(V c e =2V, Ic =4A) in . Low Collector Saturation Voltage


    OCR Scan     		PDF 2SC4684 IC 741 1 PC

    2SC4684

    Abstract: No abstract text available
    Text: TO SH IBA 2SC4684 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SC4684 MEDIUM POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hFE 1 = 800-3200 (Vc e = 2 V, Iq = 0.5 A) : hFE (2) = 250 (Min.) (VCE = 2 V, Iç; = 4 A)


    OCR Scan     		PDF 2SC4684 2SC4684

    2SC4684

    Abstract: No abstract text available
    Text: TO SH IBA 2SC4684 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4684 Unit in mm STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS A 6.8MAX., • • • 5.2 ± 0.2 High DC Current Gain : hFE (i) = 800-3200 (Vce = 2 V, Ic = 0.5 A) : hFE (2) = 250 (Min.) (Vc e = 2 V, Iç = 4 A)


    OCR Scan     		PDF 2SC4684 2SC4684

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4684 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4684 Unit in mm STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hFE l = 800-3200 (Vqe = 2 V, Iß = 0.5 A) : hFE (2) = 250 (Min.) (Vc e = 2 v > IC = 4 A)


    OCR Scan     		PDF 2SC4684

    2SC4684

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4684 T O S H IB A T R A N S IS T O R SIL IC O N N P N E P IT A X IA L TYPE 2SC4684 U n it in m m S T R O B E FLASH A P P L IC A T IO N S M E D IU M P O W E R A M P L IF IE R A P P L IC A T IO N S • H igh DC Current Gain : hFE i = 8 0 0 -3 2 0 0 (V c e = 2 V , I c = 0.5 A)


    OCR Scan     		PDF 2SC4684

    2SC4684

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4684 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4684 Unit in mm STROBE FLASH APPLICATIONS M EDIUM PO W ER AM PLIFIER APPLICATIONS • High DC Current Gain : hFE 1 = 800-3200 (Vce = 2 V, Ic = 0.5 A) : hFE (2) = 250 (Min.) (VCE = 2 V, Iç; = 4 A)


    OCR Scan     		PDF 2SC4684 2SC4684

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


    OCR Scan     		PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    2sC5200, 2SA1943, 2sc5198

    Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
    Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428


    OCR Scan     		PDF 2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266