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    Toshiba America Electronic Components 2SC4409(TE12L,ZC)

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    Quest Components 2SC4409(TE12L,ZC) 1,605
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    Chip1Stop 2SC4409(TE12L,ZC) Cut Tape 920
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    Toshiba America Electronic Components 2SC4409(T12L,F)

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    Quest Components 2SC4409(T12L,F) 138
    • 1 $4.23
    • 10 $4.23
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    2SC4409 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC4409 Kexin Power Switching Applications Original PDF
    2SC4409 Toshiba NPN Transistor Original PDF
    2SC4409 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC4409 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC4409 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC4409 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC4409 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC4409 Toshiba Silicon NPN transistor for power amplifier and power switching applications Scan PDF
    2SC4409TE12L Toshiba 2SC4409 - TRANSISTOR 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    2SC4409(TE12L,F) Toshiba 2SC4409 - TRANS NPN 50V 2A PW-MINI Original PDF
    2SC4409TE12R Toshiba 2SC4409 - TRANSISTOR 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF

    2SC4409 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1681

    Abstract: 2SC4409
    Text: 2SC4409 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4409 Power Amplifier Applications Power switching applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5V (max) (at IC = 1A) • High speed switching time: tstg = 500ns (typ.)


    Original     		PDF 2SC4409 500ns 2SA1681 2SA1681 2SC4409

    2SA1681

    Abstract: 2SC4409
    Text: 2SC4409 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4409 Power Amplifier Applications Power switching applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5V (max) (at IC = 1A) • High speed switching time: tstg = 500ns (typ.)


    Original     		PDF 2SC4409 500ns 2SA1681 2SA1681 2SC4409

    2SA1681

    Abstract: 2SC4409
    Text: 2SC4409 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4409 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ･エミッタ間飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1 A) •


    Original     		PDF 2SC4409 2SA1681 SC-62 20070701-JA 2SA1681 2SC4409

    transistor smd marking KA

    Abstract: Marking KA 2SA1681 2SC4409 smd 1A smd marking KA smd marking TF
    Text: Transistors SMD Type Power Switching Applications 2SC4409 Features Low Collector Saturation Voltage: VCE sat = 0.5V(max)(IC = 1A) High Speed Switching Time: tstg = 500ns(typ.) Small Flat Package PC = 1.0 to 2.0W (mounted on a ceramic substrate) Complementary to 2SA1681


    Original     		PDF 2SC4409 500ns 2SA1681 100mA transistor smd marking KA Marking KA 2SA1681 2SC4409 smd 1A smd marking KA smd marking TF

    SMD transistor 23

    Abstract: smd transistor marking 1A 2SA1681 la smd marking MARKING LA 1a smd transistor 2SC4409 smd 1A marking LA SMD smd marking 1a
    Text: Transistors SMD Type Power Switching Applications 2SA1681 Features Low Saturation Voltage: VCE sat = -0.5V(max)(IC = -1A) High Speed Switching Time: tstg = 300ns(typ.) Small Flat Package PC = 1.0 to 2.0W (mounted on a ceramic substrate) Complementary to 2SC4409


    Original     		PDF 2SA1681 300ns 2SC4409 -100mA -10mA, SMD transistor 23 smd transistor marking 1A 2SA1681 la smd marking MARKING LA 1a smd transistor 2SC4409 smd 1A marking LA SMD smd marking 1a

    2SA1681

    Abstract: 2SC4409
    Text: 2SC4409 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4409 Power Amplifier Applications Power switching applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5V (max) (at IC = 1A) · High speed switching time: tstg = 500ns (typ.)


    Original     		PDF 2SC4409 500ns 2SA1681 2SA1681 2SC4409

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SA1681 Features Low Saturation Voltage: VCE sat = -0.5V(max)(IC = -1A) High Speed Switching Time: tstg = 300ns(typ.) Small Flat Package PC = 1.0 to 2.0W (mounted on a ceramic substrate) Complementary to 2SC4409 Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SA1681 300ns 2SC4409 -10mA, -100mA

    Untitled

    Abstract: No abstract text available
    Text: 2SC4409 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4409 Power Amplifier Applications Power switching applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5V (max) (at IC = 1A) • High speed switching time: tstg = 500ns (typ.)


    Original     		PDF 2SC4409 500ns 2SA1681

    2SA1681

    Abstract: 2SC4409
    Text: 2SC4409 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4409 Power Amplifier Applications Power switching applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5V (max) (at IC = 1A) • High speed switching time: tstg = 500ns (typ.)


    Original     		PDF 2SC4409 500ns 2SA1681 2SA1681 2SC4409

    Untitled

    Abstract: No abstract text available
    Text: 2SC4409 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4409 Power Amplifier Applications Power switching applications • Low collector saturation voltage: VCE (sat) = 0.5V (max) (at IC = 1A) • High speed switching time: tstg = 500ns (typ.)


    Original     		PDF 2SC4409 500ns 2SA1681

    2SA1681

    Abstract: 2SC4409
    Text: 2SC4409 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4409 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ･エミッタ間飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1 A) •


    Original     		PDF 2SC4409 2SA1681 SC-62 2SA1681 2SC4409

    2SA1681

    Abstract: 2SC4409
    Text: 2SC4409 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4409 Power Amplifier Applications Power switching applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5V (max) (at IC = 1A) • High speed switching time: tstg = 500ns (typ.)


    Original     		PDF 2SC4409 500ns 2SA1681 2SA1681 2SC4409

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    2SC4415

    Abstract: 2SC4418 2SC4398 2SC4427 2SC4393 2SC4394 2SC4396 2SC4397 2SC4399 2SC4400
    Text: - 200 - W. n Ta=25T . *EP(àTc=25‘C) m % ffl iâ , , VCEO (V) 2SC4393 2SC4394 2SC4396 2SC4397 2SC4398 2SC4399 2SC4400 2SC4401 2SC4402 2SC4403 2SC4404 2SC4405 2SC4406 2SC4407 2SC4408 2SC4409 2SC4410 2SC4411 2SC4412 2SC4413 2SC4414 2SC4415 2SC4416 2SC4417


    OCR Scan     		PDF 2SC4393 2SC4394 2SC4396 2SC4397 2SC4398 2SC4399 2SC4400 900MHz 2SC4416 2SC4417 2SC4415 2SC4418 2SC4398 2SC4427 2SC4393 2SC4394 2SC4396 2SC4399 2SC4400

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A 2SC4409 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4409 Unit in mm POWER SWITCHING APPLICATIONS. • Low Collector Saturation Voltage : v CE(sat) = °-5V (Max-) (at Iç = lA) • High Speed Switching Time : tgtg = 500ns (Typ.)


    OCR Scan     		PDF 2SC4409 500ns 2SA168Ì

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4409 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4409 Unit in mm ra POWER SWITCHING APPLICATIONS. 1.6MAX. 1.7MAX. • • • • • Low Collector Saturation Voltage : v CE(sat) = °-5V (Max.) (at Ic = lA)


    OCR Scan     		PDF 2SC4409 500ns 2SA1681 SC-62

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC4409 POWER A MPLIFIER APPLICATIONS. Unit in m m POWER SWITCHING APPLICATIONS. 1.6MAX0.4 ±0.05,. 1.7 MAX- . Low Collector Saturation Voltage : VC E sat =0.5V(Max.)(at Ic=lA) . High Speed Switching Time : tstg=500ns(Typ.) . Small Flat Package


    OCR Scan     		PDF 2SC4409 500ns 2SA1681 100mA

    2-5K1A

    Abstract: 2-5K1A toshiba 2SA1681 2SC4409 toshiba Transistor Silicon pct toshiba marking 12w
    Text: TO SHIBA 2SC4409 2SC4409 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS. 1.6 MAX. 4.6 MAX. 1.7MAX. Low Collector Saturation Voltage : VCE (sat)“ °-5V (Max.) (at Ie = lA)


    OCR Scan     		PDF 2SC4409 500ns 2SA1681 SC-62 2-5K1A 2-5K1A toshiba 2SA1681 2SC4409 toshiba Transistor Silicon pct toshiba marking 12w

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SA1681 2 S A 1 681 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCES POWER AMPLIFIER APPLICATIONS Unit in mm POWER SWITCHING APPLICATIONS 1 .6M AX. —J- - 4.6M A X. 1.7M AX. i _E Low Saturation Voltage : V qe (sat)= -0.5V (Max.)


    OCR Scan     		PDF 2SA1681 300ns 2SC4409

    2sd1878

    Abstract: 2sd2339 2SD1876 2SD2333 2SC3887A 2SD1545 2SD2009 2SC3887 T M 2313 2SD1431
    Text: - 264 - m « tt € Type No. Manuf. SANYO ÍL ÍL ±L ÍL 2SD1403 « 2SD1841 2SD 2298 2SD 2299 2SD 2300 2SD 2301 2SD 2302 « ± 2SD 2303 « d t« m±wM 2SD 2304 n = 36 2 TOSHIBA 2SC3887A m NEC B ÍI HITACHI ± Ü FU JITSU fâ T MATSUSHITA 2SD1274D ZSU56Ö


    OCR Scan     		PDF 2SD2298 2SD2299 2SD2300 2SD2301 2SD2302 2SD2303 2SD2304 2SD2305 2SD2306 2SD2307 2sd1878 2sd2339 2SD1876 2SD2333 2SC3887A 2SD1545 2SD2009 2SC3887 T M 2313 2SD1431

    2SC4542

    Abstract: 4509 2SC3303 2sc3153 2sd1314 4522 2SC4068 2SC4536 4517A 2SC2555
    Text: - 192 - SU £ Type No. tt £ Manuf. □— A 2SC 4506 H # SANYO M £ TOSHIBA B a NEC 2SC3789 2SC2551 2SC3209 2SC 4507 ✓ 2SC4106 2SC2553 2SC2518 B HITACHI Ai Ä dr ii FUJITSU fâ T MATSUSHITA 2SC 4508 * 2SC4107 2SC3626 2SC4423 2SC3306 2SC 4510 2SC4424 2SD1313


    OCR Scan     		PDF 2SC3789 2SC2551 2SC3209 2SC1573A 2SC4106 2SC2553 2SC2518 2SC4107 2SC3626 2SC4423 2SC4542 4509 2SC3303 2sc3153 2sd1314 4522 2SC4068 2SC4536 4517A 2SC2555