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    2SA1681 Search Results

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    2SA1681 Price and Stock

    Toshiba America Electronic Components 2SA1681(TE12L,ZC)

    Trans GP BJT PNP 50V 2A 1000mW 4-Pin(3+Tab) PW-Mini T/R
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    Verical 2SA1681(TE12L,ZC) 2,960 521
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    2SA1681(TE12L,ZC) 775 153
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    Quest Components 2SA1681(TE12L,ZC) 2,368
    • 1 $0.96
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    Chip1Stop 2SA1681(TE12L,ZC) Cut Tape 775
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    Toshiba America Electronic Components 2SA1681(TE12L,F)

    Trans GP BJT PNP 50V 2A 4-Pin(3+Tab) PW-Mini T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip1Stop 2SA1681(TE12L,F) 17,550
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    2SA1681 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SA1681 Kexin Power Switching Applications Original PDF
    2SA1681 Toshiba PNP transistor Original PDF
    2SA1681 TY Semiconductor Power Switching Applications - SOT-89 Original PDF
    2SA1681 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1681 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1681 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1681 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1681 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1681 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1681 Toshiba Silicon PNP transistor for power amplifier and power switching applications Scan PDF
    2SA1681 Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE(PCT PROCESS) Scan PDF
    2SA1681TE12L Toshiba 2SA1681 - TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    2SA1681(TE12L,F) Toshiba 2SA1681 - TRANS PNP 50V 2A PW-MINI Original PDF
    2SA1681TE12R Toshiba 2SA1681 - TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF

    2SA1681 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SA1681 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1681 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 300 ns (typ.)


    Original     		PDF 2SA1681 2SC4409 SC-62

    transistor smd marking KA

    Abstract: Marking KA 2SA1681 2SC4409 smd 1A smd marking KA smd marking TF
    Text: Transistors SMD Type Power Switching Applications 2SC4409 Features Low Collector Saturation Voltage: VCE sat = 0.5V(max)(IC = 1A) High Speed Switching Time: tstg = 500ns(typ.) Small Flat Package PC = 1.0 to 2.0W (mounted on a ceramic substrate) Complementary to 2SA1681


    Original     		PDF 2SC4409 500ns 2SA1681 100mA transistor smd marking KA Marking KA 2SA1681 2SC4409 smd 1A smd marking KA smd marking TF

    2SA1681

    Abstract: 2SC4409
    Text: 2SA1681 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1681 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) · High speed switching time: tstg = 300 ns (typ.)


    Original     		PDF 2SA1681 2SC4409 2SA1681 2SC4409

    2SA1681

    Abstract: 2SC4409
    Text: 2SA1681 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1681 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 300 ns (typ.)


    Original     		PDF 2SA1681 2SC4409 2SA1681 2SC4409

    SMD transistor 23

    Abstract: smd transistor marking 1A 2SA1681 la smd marking MARKING LA 1a smd transistor 2SC4409 smd 1A marking LA SMD smd marking 1a
    Text: Transistors SMD Type Power Switching Applications 2SA1681 Features Low Saturation Voltage: VCE sat = -0.5V(max)(IC = -1A) High Speed Switching Time: tstg = 300ns(typ.) Small Flat Package PC = 1.0 to 2.0W (mounted on a ceramic substrate) Complementary to 2SC4409


    Original     		PDF 2SA1681 300ns 2SC4409 -100mA -10mA, SMD transistor 23 smd transistor marking 1A 2SA1681 la smd marking MARKING LA 1a smd transistor 2SC4409 smd 1A marking LA SMD smd marking 1a

    2SA1681

    Abstract: 2SC4409
    Text: 2SA1681 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1681 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 300 ns (typ.)


    Original     		PDF 2SA1681 2SC4409 2SA1681 2SC4409

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SA1681 Features Low Saturation Voltage: VCE sat = -0.5V(max)(IC = -1A) High Speed Switching Time: tstg = 300ns(typ.) Small Flat Package PC = 1.0 to 2.0W (mounted on a ceramic substrate) Complementary to 2SC4409 Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SA1681 300ns 2SC4409 -10mA, -100mA

    2SA1681

    Abstract: 2SC4409
    Text: 2SA1681 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1681 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 300 ns (typ.)


    Original     		PDF 2SA1681 2SC4409 2SA1681 2SC4409

    2SA1681

    Abstract: 2SC4409
    Text: 2SA1681 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1681 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A)


    Original     		PDF 2SA1681 2SC4409 SC-62 20070701-JA 2SA1681 2SC4409

    2SA1681

    Abstract: 2SC4409
    Text: 2SC4409 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4409 Power Amplifier Applications Power switching applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5V (max) (at IC = 1A) • High speed switching time: tstg = 500ns (typ.)


    Original     		PDF 2SC4409 500ns 2SA1681 2SA1681 2SC4409

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2SA1681

    Abstract: 2SC4409
    Text: 2SC4409 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4409 Power Amplifier Applications Power switching applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5V (max) (at IC = 1A) • High speed switching time: tstg = 500ns (typ.)


    Original     		PDF 2SC4409 500ns 2SA1681 2SA1681 2SC4409

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    2SA1681

    Abstract: 2SC4409
    Text: 2SC4409 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4409 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ･エミッタ間飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1 A) •


    Original     		PDF 2SC4409 2SA1681 SC-62 20070701-JA 2SA1681 2SC4409

    2SA168

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1681 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCES 2 S A 1 6 81 Unit in mm PO W ER SWITCHING APPLICATIONS l.GMAX. 4.6MAX. 1.7MAX. Low Saturation Voltage 0M ±0.05 : V ç e ($at)~ —0.5V (Max.) 5 ÍTn = _1 Ai'


    OCR Scan     		PDF 2SA1681 300ns 2SC4409 100mA --10m --30m. --100m --300m 2SA168

    2SA1681

    Abstract: 2SC4409 A1681
    Text: TO SH IBA 2SA1681 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCES 2 S A 1 681 POWER AMPLIFIER APPLICATIONS Unit in mm POWER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. Low Saturation Voltage 0.4 ±0.05 : V q ^ (sat)“ —0.5V (Max.) (IC = —1A)


    OCR Scan     		PDF 2SA1681 300ns 2SC4409 2SA1681 2SC4409 A1681

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE 2SA1681 POWER AMPL I F I E R APPLICATIONS. Unit in mm POWER SWITCHING APPLICATIONS. 1.6 MAX. 0-4 ¿0.05 4.6MAX. 1. 7 MAX. . Low Collector Saturation Voltage 3 b : V c e sat =-0.5V(Max.) (at Ic=-1A) . High Speed Switching Time : tstg=300ns(Typ.)


    OCR Scan     		PDF 2SA1681 300ns 2SC4409 -100mA -100m -300m

    A1681

    Abstract: 2SA1681 2SC4409
    Text: TOSHIBA 2SA1681 2 S A 1 681 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCES Unit in mm POWER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V q ^ (sat)“ —0.5V (Max.) (IC = —1A) High Speed Switching Time: tstg = 300ns(Typ.)


    OCR Scan     		PDF 2SA1681 300ns 2SC4409 A1681 2SA1681 2SC4409

    2SA1681

    Abstract: 2SC4409 A1681
    Text: TO SHIBA 2SA1681 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCES 2 S A 1 681 POWER AMPLIFIER APPLICATIONS Unit in mm POWER SW ITCHING APPLICATIONS 1.6MAX 4.6MAX. — 1.7MAX. Low Saturation Voltage 0.4 + 0.05 : VCE (sat)= —0.5V (Max.) (IC = —1A)


    OCR Scan     		PDF 2SA1681 300ns 2SC4409 --10mA, 100mA 2SA1681 2SC4409 A1681

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan     		PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr

    2SC4415

    Abstract: 2SC4418 2SC4398 2SC4427 2SC4393 2SC4394 2SC4396 2SC4397 2SC4399 2SC4400
    Text: - 200 - W. n Ta=25T . *EP(àTc=25‘C) m % ffl iâ , , VCEO (V) 2SC4393 2SC4394 2SC4396 2SC4397 2SC4398 2SC4399 2SC4400 2SC4401 2SC4402 2SC4403 2SC4404 2SC4405 2SC4406 2SC4407 2SC4408 2SC4409 2SC4410 2SC4411 2SC4412 2SC4413 2SC4414 2SC4415 2SC4416 2SC4417


    OCR Scan     		PDF 2SC4393 2SC4394 2SC4396 2SC4397 2SC4398 2SC4399 2SC4400 900MHz 2SC4416 2SC4417 2SC4415 2SC4418 2SC4398 2SC4427 2SC4393 2SC4394 2SC4396 2SC4399 2SC4400

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4409 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4409 Unit in mm ra POWER SWITCHING APPLICATIONS. 1.6MAX. 1.7MAX. • • • • • Low Collector Saturation Voltage : v CE(sat) = °-5V (Max.) (at Ic = lA)


    OCR Scan     		PDF 2SC4409 500ns 2SA1681 SC-62