SB2003
Abstract: SB20-03E EN3002 NO-3002
Text: Ordering number:EN3002 SB20-03E Schottky Barrier Diode 30V, 2A Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1217 [SB20-03E] Features · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=20ns).
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EN3002
SB20-03E
SB20-03E]
O-126ML
SB2003
SB20-03E
EN3002
NO-3002
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2SC4390
Abstract: ITR06668 ITR06669 VEBO-15V
Text: 2SC4390 Ordering number : EN2958B SANYO Semiconductors DATA SHEET 2SC4390 NPN Epitaxial Planar Silicon Transistor High hFE, AF Amplifier Applications Features • • • • • Adoption of MBIT process. High DC current gain hFE=800 to 3200 . Large current capacity (IC=2A).
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2SC4390
EN2958B
VEBO15V)
2SC4390
ITR06668
ITR06669
VEBO-15V
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SB10-09F
Abstract: No abstract text available
Text: Ordering number:EN2829B SB10-09F Schottky Barrier Diode 90V, 1A Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1200A [SB10-09F] Features · Low forward voltage (VF max=0.7V).
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EN2829B
SB10-09F
SB10-09F]
O-126LP
SB10-09F
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SB02-09NP
Abstract: 95V200 AN 1157A
Text: Ordering number :EN1924B SB02-09NP Shottky Barrier Diode 90V, 200mA Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1157A [SB02-09NP] Features · Low forward voltage (VF max=0.7V).
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EN1924B
SB02-09NP
200mA
SB02-09NP]
SC-43
SB02-09NP
95V200
AN 1157A
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2SC4390
Abstract: ITR06668 ITR06669 ITR06670 ITR06671
Text: Ordering number:ENN2958A NPN Epitaxial Planar Silicon Transistor 2SC4390 High-hFE, AF Amplifier Applications Features Package Dimensions unit:mm 2038A [2SC4390] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of MBIT process. · High DC current gain hFE=800 to 3200 .
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ENN2958A
2SC4390
2SC4390]
25max
VEBO15V)
2SC4390
ITR06668
ITR06669
ITR06670
ITR06671
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PDF
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1148A
Abstract: SB02-09CP
Text: Ordering number :EN1922B SB02-09CP Shottky Barrier Diode 90V, 200mA Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1148A [SB02-09CP] Features · Low forward voltage (VF max=0.7V).
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EN1922B
SB02-09CP
200mA
SB02-09CP]
1148A
SB02-09CP
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PDF
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SB05-05NP
Abstract: 05-NP 05NP
Text: Ordering number :EN1919A SB05-05NP Shottky Barrier Diode 50V, 500mA Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1157 [SB05-05NP] Features · Low forward voltage (VF max=0.55V).
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EN1919A
SB05-05NP
500mA
SB05-05NP]
SC-43
SB05-05NP
05-NP
05NP
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PDF
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SB10-09F
Abstract: No abstract text available
Text: Ordering number:EN2829B SB10-09F Schottky Barrier Diode 90V, 1A Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1200A [SB10-09F] Features · Low forward voltage (VF max=0.7V).
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Original
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EN2829B
SB10-09F
SB10-09F]
O-126LP
SB10-09F
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PDF
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VEBO-15V
Abstract: 2SC4390 EN2958A 2038a
Text: Ordering number:EN2958A NPN Epitaxial Planar Silicon Transistor 2SC4390 High-hFE, AF Amplifier Applications Package Dimensions unit:mm 2038A [2SC4390] 4.5 1.6 1.5 0.4 1.0 2.5 • Adoption of MBIT process. · High DC current gain hFE=800 to 3200 . · Large current capacity (IC=2A).
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Original
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EN2958A
2SC4390
2SC4390]
VEBO15V)
25max
VEBO-15V
2SC4390
EN2958A
2038a
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2SC4390
Abstract: No abstract text available
Text: Ordering num ber:EN 2958 _ 2 S C 4 3 9 0 No.2958 NPN Epitaxial Planar Silicon Transistor H ig h - h p E , AF Amp Applications F e a tu re s . Adoption of MBIT process • H igh DC current gain hpE = 800 to 3200 • Large current capacity (Ic = 2A)
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OCR Scan
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2SC4390
--15V)
250mm2
2SC4390
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PDF
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN3002 SB20-03E Schottky B arrier Diode 30V, 2A Rectifier A p p lic a tio n s • High frequency rectification switching regulators, converters, choppers F e a tu re s • Low forward voltage (Vp max = 0.55V) • F ast reverse recovery time (trr max = 20ns)
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OCR Scan
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EN3002
SB20-03E
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PDF
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IC tl 494
Abstract: No abstract text available
Text: Ordering number : EN 2958 2SC4390 No.2958 SA \Y O NPN Epitaxial Planar Silicon Transistor High-hpE, AF Amp Applications F e a tu re s Adoption of MBIT process H igh DC current gain hpE = 800 to 3200 Large current capacity (Ic = 2A) Low collector to emitter saturation voltage (VcE(sat>= 0.3V)
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OCR Scan
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2SC4390
250mm2
2079MO
2SC4390
IC tl 494
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PDF
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2005A
Abstract: VEBO-15V 2SC4389 PA 2027A TRANSISTOR IFW IC3100
Text: SANYO SEMICONDUCTOR [-W-'-s " -«?*'/? 6,/îj1 L:'~~~ CORP | 32E 7 cH 7 0 7 fcj O O C H l l l • 2006A —« -• • - D 2 E3 T -2 ? -2 3 N P N Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amp Applications 2957 Features
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OCR Scan
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h707fci
T-2f23
T-91-20
SC-43
2005A
VEBO-15V
2SC4389
PA 2027A
TRANSISTOR IFW
IC3100
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PDF
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Untitled
Abstract: No abstract text available
Text: O rdering num ber: EN1924B SB02-09NP Schottky B arrier Diode 90V, 200mA Rectifier A p p lic a tio n s • H igh frequency rectification switching regulators, converters and choppers F e a tu r e s • Low forward voltage (Vp max = 0.7 V) • F ast reverse recovery time (trr max = 10ns)
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OCR Scan
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EN1924B
SB02-09NP
200mA
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PDF
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SB10-09F
Abstract: bdg rectifier
Text: Ordering number : EN2829A SB 1 0 - 0 9 F No.2829A Schottky Barrier Diode 90V , 1A R ectifier Applications »High frequency rectification switching regulators, converters, choppers Features •Low forward voltage (Vp max = 0.7V) • F ast reverse recovery time (trr max = 20ns)
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OCR Scan
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EN2829A
SB10-09F
bdg rectifier
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PDF
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