c3710a
Abstract: 2SC3710A C371 2SA1452A
Text: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1452A
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2SC3710A
2SA1452A
c3710a
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C371
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Untitled
Abstract: No abstract text available
Text: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1452A
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2SC3710A
2SA1452A
2-10R1A
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Untitled
Abstract: No abstract text available
Text: 2SC3714 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)450 V(BR)CBO (V)600 I(C) Max. (A)20 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SC3714
Freq20M
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2SA1452
Abstract: 2SC3710
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1452 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.4V(Max)@IC= -6A ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SC3710 APPLICATIONS
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2SA1452
2SC3710
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2SC371
Abstract: high hfe transistor 2SA1452 2SC3710
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1452 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.4V(Max)@IC= -6A ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SC3710 APPLICATIONS
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2SA1452
2SC3710
2SC371
high hfe transistor
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Untitled
Abstract: No abstract text available
Text: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1452A
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2SC3710A
2SA1452A
2-10R1A
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2SC371
Abstract: 2SA1452 2SC3710
Text: Power Transistors www.jmnic.com 2SC3710 Silicon NPN Transistors Features BCE ﹒With TO-220Fa package ﹒Complement to type 2SA1452 ﹒Hihg current switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT V VCBO Collector to base voltage
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2SC3710
O-220Fa
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2SA1452
Abstract: 2SC3710 2SC371
Text: JMnic Product Specification 2SA1452 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・High speed switching time ・Complement to type 2SC3710 APPLICATIONS ・High current switching applications PINNING
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C3710A
Abstract: 2SA1452A 2SC3710A
Text: 2SC3710A シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3710A 通 信 工 業 用 ○ 大電力スイッチング用 • 単位: mm コレクタ飽和電圧が低い。: VCE (sat) = 0.4 V (最大) (IC = 6 A) • スイッチング時間が速い。: tstg = 1.0 s (標準)
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2SC3710A
2SA1452A
2-10R1A
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2SC3710
Abstract: NPN 80V 3A 2SA1452
Text: SavantIC Semiconductor Product Specification 2SC3710 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SA1452 ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications
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2SC3710
O-220Fa
2SA1452
O-220Fa)
VCCB30V
2SC3710
NPN 80V 3A
2SA1452
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2SA1452
Abstract: 2sa145 2SC3710
Text: SavantIC Semiconductor Product Specification 2SA1452 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·High speed switching time ·Complement to type 2SC3710 APPLICATIONS ·High current switching applications
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2SA1452
O-220Fa
2SC3710
2SA1452
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2SC3710
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2SC3710
Abstract: 2SC371 2SA1452 2SC371-0
Text: Inchange Semiconductor Product Specification 2SC3710 Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・Complement to type 2SA1452 ・Low collector saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications
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2SC3710
O-220Fa
2SA1452
O-220Fa)
VCC30V
2SC3710
2SC371
2SA1452
2SC371-0
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2SC371
Abstract: No abstract text available
Text: 2SC371 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SC371
Freq150M
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c3710a
Abstract: 2SA1452A 2SC3710A
Text: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1452A
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2SC3710A
2SA1452A
c3710a
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE 2SC3710 HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm FEATURES: . Low Collector Saturation Voltage : VcE sat ~°-4V(Max.) 0 3.2 ±0.2 (at Ic=6A) . High Speed Switching Time : tstg= l.Ous(Typ.) Zli . Complementary to 2SA1452
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2SC3710
2SA1452
20/is
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f 4558
Abstract: 4558 fa 4558 2SC4588 4558, 4556 2SD2076 4558 nec 2SC4420 NEC 4559 2SC3425
Text: - m € Type No. € tt Manuf. 2SC 4548 / 2SC 4549 > H # o m. p B $ B S B 8 2SC 4550 2SC 4551 2SC 4552 H # SANYO *£ M TOSHIBA 2SD127D 2SD1271 2SC3748 2SC3709 2SÜ2151 2SC3710 2SD1964 2SD1947 2SD1271 2SC 4555 = 2SC 4556 1 t'y'T'y 2SC4162 2SC3626 y -ytry 2SC4459
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2SC3075
2SC3748
2SD1408
2SD1270
2SC4596
2SC3747
2SD1411
2SD1271
2SC3709
f 4558
4558
fa 4558
2SC4588
4558, 4556
2SD2076
4558 nec
2SC4420
NEC 4559
2SC3425
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2SA1452A
Abstract: 2SC3710A
Text: 2SC3710A TO SHIBA 2SC3710A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS • • Low Collector Saturation Voltage : V qe (sat)= 0.4V (Max.) High Speed Switching Time : tstg=1.0/¿s (Typ.) Complementary to 2SA1452A
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2SC3710A
2SA1452A
2SA1452A
2SC3710A
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10f150
Abstract: 2SA1452A 2SC3710A
Text: TO SH IBA 2SC3710A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3710A HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm • Low Collector Saturation Voltage : V^g 0.4V (Max.) • High Speed Switching Time : tgtg^l.O/^s (Typ.)
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2SC3710A
2SA1452A
10f150
2SA1452A
2SC3710A
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IC 555 working
Abstract: 2SA1452A 2SC3710A
Text: T O S H IB A 2SC3710A T O S H IB A TRA N SISTO R SILICON NPN E PIT A X IA L T Y PE PCT PROCESS 2SC3710A HIGH C U RREN T SW ITC H IN G A PPLIC A TIO N S IN D U S T R IA L A P P L IC A T IO N S U n it in m m L ow C ollector S a tu r a tio n V o lta g e : Vç!E (sa t) —0 .4 V (M ax.)
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2SC3710A
2SA1452A
IC 555 working
2SA1452A
2SC3710A
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2SC3710
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3710 HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in non FEATURES: 10.3 MAX . Low Collector Saturation Voltage : VcE(sat)= 0.4V(Max.) . High Speed Switching Time (at Ic=6A) : ts tg*l •0<js (Typ.)
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2SC3710
2SA1452
2SC3710
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC3710A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3710A HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm Low Collector Saturation Voltage : V q e (sat)= 0-4V (Max.) • High Speed Switching Time : tstg = 1 .0 (us (Typ.)
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2SC3710A
2SA1452A
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Untitled
Abstract: No abstract text available
Text: 2SC3710A TOSHIBA 2 S C 3 7 1QA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS • • INDUSTRIAL APPLICATIONS Low Collector Saturation Voltage : (sat) = 0.4V (Max.) High Speed Switching Time : tstg=1.0//s (Typ.)
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2SC3710A
2SA1452A
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2SC3710A
Abstract: 2SA1452A
Text: TO SH IBA 2SC3710A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3710A HIGH CURRENT SWITCHING APPLICATIONS Unit in mm • Low Collector Saturation Voltage : V^g 0.4V (Max.) • High Speed Switching Time : tgtg^l.O/^s (Typ.) • Complementary to 2SA1452A
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2SC3710A
2SA1452A
2SC3710A
2SA1452A
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Untitled
Abstract: No abstract text available
Text: /* 7 - FX series Switching Power Transistor IW F iv l'iilS I 2 0 a 2SC3714 O u tlin e D im e n s io n s T20W 40FX (NPN) • 4 £ $ tft^ 5 È te A b s o l u t e M ax im u m R a t i n g s m Item § £ ft & % Symbol m « m. Ratings Unit T stg -5 5 -1 5 0 *c
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2SC3714
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