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    2SA1452A Search Results

    2SA1452A Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SA1452A Toshiba Silicon PNP epitaxial type transistor for high speed, high current switching applications Scan PDF
    2SA1452A Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Scan PDF
    2SA1452AO Toshiba Silicon PNP Epitaxial Type Transistor Scan PDF
    2SA1452AY Toshiba Silicon PNP Epitaxial Type Transistor Scan PDF
    2SA1452A-Y(F) Toshiba 2SA1452 - TRANS PNP 50V 12A 2-10R1A Original PDF
    2SA1452A-YF Toshiba 2SA1452A - Trans GP BJT PNP 80V 12A 3-Pin(3+Tab) TO-220NIS Original PDF

    2SA1452A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A1452A

    Abstract: 2SA1452A 2SC3710A
    Text: 2SA1452A 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1452A ○ 大電流スイッチング用 • 単位: mm コレクタ飽和電圧が低い。: VCE (sat) = −0.4 V (最大) (IC = −6 A) • スイッチング時間が速い。: tstg = 1.0 s (標準)


    Original     		PDF 2SA1452A 2SC3710A 2-10R1A 20070701-JA A1452A 2SA1452A 2SC3710A

    c3710a

    Abstract: 2SC3710A C371 2SA1452A
    Text: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1452A


    Original     		PDF 2SC3710A 2SA1452A c3710a 2SC3710A C371 2SA1452A

    Untitled

    Abstract: No abstract text available
    Text: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1452A


    Original     		PDF 2SC3710A 2SA1452A 2-10R1A

    A1452A

    Abstract: 2sa1452a A1452 2SC3710A
    Text: 2SA1452A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1452A High-Speed, High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 1.0 µs (typ.)


    Original     		PDF 2SA1452A 2SC3710A A1452A 2sa1452a A1452 2SC3710A

    Untitled

    Abstract: No abstract text available
    Text: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1452A


    Original     		PDF 2SC3710A 2SA1452A 2-10R1A

    A1452

    Abstract: A1452A 2SA1452A 2SC3710A A-1452
    Text: 2SA1452A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1452A High-Speed, High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 1.0 s (typ.)


    Original     		PDF 2SA1452A 2SC3710A A1452 A1452A 2SA1452A 2SC3710A A-1452

    c3710a

    Abstract: 2SA1452A 2SC3710A
    Text: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1452A


    Original     		PDF 2SC3710A 2SA1452A c3710a 2SA1452A 2SC3710A

    A1452A

    Abstract: No abstract text available
    Text: 2SA1452A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1452A High-Speed, High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 1.0 µs (typ.)


    Original     		PDF 2SA1452A 2SC3710A 2-10R1A A1452A

    2N7058

    Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
    Text: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20


    Original     		PDF VNL005A O-204AA/TO-3 VNM006A VNM005A 2N1717 2N1890 O-205AD/TO-39 2N7058 ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


    Original     		PDF BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1452A 2SA1452A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (sat)= -0 .4 V (Max.) (at I c = -6 A ) High Speed Switching Time : ts^g= 1 .0 / j s (Typ.)


    OCR Scan     		PDF 2SA1452A 2SC3710A

    2SA1452A

    Abstract: 2SC3710A
    Text: TOSHIBA 2SA1452A TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1452A HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm Low Collector Saturation Voltage r 2 '^ " 0 : VCE (sat)= - 0 .4 V (Max.) (at Iq = - 6 A )


    OCR Scan     		PDF 2SA1452A 2SC3710A 2SA1452A 2SC3710A

    2SA1452A

    Abstract: 2SC3710A
    Text: 2SC3710A TO SHIBA 2SC3710A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS • • Low Collector Saturation Voltage : V qe (sat)= 0.4V (Max.) High Speed Switching Time : tstg=1.0/¿s (Typ.) Complementary to 2SA1452A


    OCR Scan     		PDF 2SC3710A 2SA1452A 2SA1452A 2SC3710A

    2SA1452A

    Abstract: 2SC3710A
    Text: 2SA1452A TO SH IBA 2SA1452A SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS 10 ±0.3 ^3.2 ± 0.2 -y 5 < tY' o o 2.7±Q 2 of ml +1 in 1.1 1.1 0.75 ±0.15 MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SA1452A 2SC3710A 2SA1452A 2SC3710A

    2SC3710A

    Abstract: 2SA1452A
    Text: TO SH IBA 2SC3710A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3710A HIGH CURRENT SWITCHING APPLICATIONS Unit in mm • Low Collector Saturation Voltage : V^g 0.4V (Max.) • High Speed Switching Time : tgtg^l.O/^s (Typ.) • Complementary to 2SA1452A


    OCR Scan     		PDF 2SC3710A 2SA1452A 2SC3710A 2SA1452A

    2SA1452A

    Abstract: 2SC3710A s2555
    Text: 2SA1452A TO SH IBA 2SA1452A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage . , .x — n a \ t 10 ±0.3 t^ , — • vuiii (sat)- '“'•rrv v"iaA^ van •


    OCR Scan     		PDF 2SA1452A 2SC3710A 2SA1452A 2SC3710A s2555

    IR-1U

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1452A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS Low Collector Saturation Voltage • V qe (sat)“ —0.4V (Max.) (at Ic = - 6A) High Speed Switching Time : tgtg^l.O^siTyp.)


    OCR Scan     		PDF 2SA1452A 2SC3710A IR-1U

    2SA1452A

    Abstract: 2SC3710A
    Text: TO S H IB A 2SA1452A 2SA1452A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage : VCE (sat)= -0 .4 V (Max.) (at I c = —6A)


    OCR Scan     		PDF 2SA1452A 2SC3710A 2SA1452A 2SC3710A

    10f150

    Abstract: 2SA1452A 2SC3710A
    Text: TO SH IBA 2SC3710A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3710A HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm • Low Collector Saturation Voltage : V^g 0.4V (Max.) • High Speed Switching Time : tgtg^l.O/^s (Typ.)


    OCR Scan     		PDF 2SC3710A 2SA1452A 10f150 2SA1452A 2SC3710A