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    2SA145 Search Results

    2SA145 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    2SA1459-A Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
    2SA1459-T-A Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
    2SA1458-A Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
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    2SA145 Price and Stock

    3M Interconnect 1U30S-MB2-SA1-450

    USB3 CABLE ASSEMBLY 4.5 METER
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    DigiKey 1U30S-MB2-SA1-450 Box 21 1
    • 1 $83.3
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    • 100 $59.6058
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    Mouser Electronics 1U30S-MB2-SA1-450 50
    • 1 $82.59
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    Interstate Connecting Components 1U30S-MB2-SA1-450 6
    • 1 $95.3692
    • 10 $76.9106
    • 100 $74.5072
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    Rochester Electronics LLC 2SA1450T-AA

    PNP SILICON TRANSISTOR
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    DigiKey 2SA1450T-AA Bulk 3,806
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    3M 1U30S-MB2-SA1-450 (ALTERNATE: 04550309218461)

    Cable, Assembly, USB Micro B plug to USB Standard A, 4.5M length, Black | 3M 1U30S-MB2-SA1-450
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    RS 1U30S-MB2-SA1-450 (ALTERNATE: 04550309218461) Bulk 106 Weeks 25
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    Bristol Electronics 2SA1452-Y 230 3
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    • 100 $1.4062
    • 1000 $0.8438
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    Quest Components 2SA1452-Y 184
    • 1 $3
    • 10 $3
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    NEC Electronics Group 2SA1458-T

    2SA1458-T
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    Quest Components 2SA1458-T 1,309
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    2SA145 Datasheets (105)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA145 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SA145 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA145 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SA145 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA145 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA145 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA145 Unknown Cross Reference Datasheet Scan PDF
    2SA1450 Sanyo Semiconductor PNP Epitaxial Planar Silicon Transistor Original PDF
    2SA1450 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1450 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1450 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1450 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1450 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1450 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1450 Sanyo Semiconductor Low-Frequency Driver Applications Scan PDF
    2SA1450R Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1450R Sanyo Semiconductor PNP/NPN Epitaxial Planar Silicon Transistors Scan PDF
    2SA1450S Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1450S Sanyo Semiconductor PNP/NPN Epitaxial Planar Silicon Transistors Scan PDF
    2SA1450T Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2SA145 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC3709

    Abstract: 2SA1451 pnp hfe 120-240
    Text: JMnic Product Specification 2SA1451 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・High speed switching time ・Complement to type 2SC3709 APPLICATIONS ・High current switching applications PINNING


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    2SA1451 O-220Fa 2SC3709 VCC-30V 2SC3709 2SA1451 pnp hfe 120-240 PDF

    A1452A

    Abstract: 2SA1452A 2SC3710A
    Text: 2SA1452A 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1452A ○ 大電流スイッチング用 • 単位: mm コレクタ飽和電圧が低い。: VCE (sat) = −0.4 V (最大) (IC = −6 A) • スイッチング時間が速い。: tstg = 1.0 s (標準)


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    2SA1452A 2SC3710A 2-10R1A 20070701-JA A1452A 2SA1452A 2SC3710A PDF

    C3709A

    Abstract: 2SA1451A 2SC3709A
    Text: 2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3709A High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1451A


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    2SC3709A 2SA1451A C3709A 2SA1451A 2SC3709A PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SA1455K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low noise design:NF=0.2dB Typ. 0.55 High breakdown voltage:VCEO=-120V +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05


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    2SA1455K OT-23 -120V -100V -10mA, 30MHz PDF

    c3710a

    Abstract: 2SC3710A C371 2SA1452A
    Text: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1452A


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    2SC3710A 2SA1452A c3710a 2SC3710A C371 2SA1452A PDF

    a1451a

    Abstract: 2SA1451A A1451 2SC3709A
    Text: 2SA1451A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1451A High-Speed, High-Current Switching Applications • Low collector saturation voltage • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SC3709A Unit: mm : VCE (sat) = −0.4 V (max) (IC = −6 A)


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    2SA1451A 2SC3709A a1451a 2SA1451A A1451 2SC3709A PDF

    2SA1450

    Abstract: 2sc3708
    Text: Ordering number:EN2217A PNP/NPN Epitaxial Planar Silicon Transistor 2SA1450/2SC3708 Low-Frequency Driver Applications Features Package Dimensions • Adoption of FBET process. · AF amp, AF power amp. · High breakdown voltage : VCEO>80V unit:mm 2003A [2SA1450/2SC3708]


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    EN2217A 2SA1450/2SC3708 2SA1450/2SC3708] SC-43 2SA1450 2SA1450 2sc3708 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1452A


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    2SC3710A 2SA1452A 2-10R1A PDF

    2SA1450

    Abstract: 2SC3708 ITR03631 ITR03632 ITR03633 ITR03634
    Text: 2SA1450 / 2SC3708 注文コード No. N 2 2 1 7 B 三洋半導体データシート 半導体ニューズ No.N2217A をさしかえてください。 2SA1450 / 2SC3708 PNP / NPN エピタキシァルプレーナ型シリコントランジスタ 低周波ドライバ用


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    2SA1450 2SC3708 N2217A 2SA1450 400mA 2SC3708 ITR03644 ITR03631 ITR03632 ITR03633 ITR03634 PDF

    1S955

    Abstract: 2SA1458 2SC3731
    Text: ST 2SA1458 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups M, L and K, according to its DC current gain. On special request, these transistors can be


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    2SA1458 2SC3731 PW300ns 1S955 1S955 2SA1458 PDF

    1S955

    Abstract: 2SA1458 2SC3731
    Text: ST 2SA1458 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups M, L and K, according to its DC current gain. On special request, these transistors can be


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    2SA1458 2SC3731 PW300ns 1S955 1S955 2SA1458 PDF

    A1452A

    Abstract: 2sa1452a A1452 2SC3710A
    Text: 2SA1452A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1452A High-Speed, High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 1.0 µs (typ.)


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    2SA1452A 2SC3710A A1452A 2sa1452a A1452 2SC3710A PDF

    MARKING SMD PNP TRANSISTOR R

    Abstract: equivalent 2sa1455k 2SA1455K
    Text: Transistors SMD Type Epitaxial Planar PNP Silicon Transistor 2SA1455K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low noise design:NF=0.2dB Typ. 0.55 High breakdown voltage:VCEO=-120V +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1


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    2SA1455K OT-23 -120V -100V -10mA, 30MHz MARKING SMD PNP TRANSISTOR R equivalent 2sa1455k 2SA1455K PDF

    2SA1451

    Abstract: 2SC3709
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1451 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.4V(Max)@IC= -6A ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SC3709 APPLICATIONS


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    2SA1451 2SC3709 2SA1451 2SC3709 PDF

    2SA1452

    Abstract: 2SC3710
    Text: AOK AOK Semiconductor P ro d u c t S p ecificatio n 2SA1452 Silicon PNP P o w er Transistors D E S C R IP T IO N • W ith T D - 2 2 0 F a p a c k a g e • L o w co llecto r s a tu ratio n v o lta g e • H ig h s p e e d sw itching tim e • C o m p le m e n t to typ e 2 S C 3 7 1 0


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    2SA1452 O-22C 2SC3710 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1452A 2SA1452A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (sat)= -0 .4 V (Max.) (at I c = -6 A ) High Speed Switching Time : ts^g= 1 .0 / j s (Typ.)


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    2SA1452A 2SC3710A PDF

    D1351

    Abstract: ELLS 110 2SA1458 U110 5925B
    Text: Silicon Transistor 2SA1458 P N P n L £ ? j r ' > 7 J U i & ' > ' z i > b :ÿ > i S Z > 9 m m p i g i l i ¿s j: z f * m # m x + » 0X4 o - y f > =r u 9 ï f â f n m i î & ' h S 0 3 1 / ^ : ? i i r ! l ; ô iV J ' ? v \, t 'o 02SC3731 t rJ>7°'J / 'y 9 UTÎÎfflT'ë i t o


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    2SA1458 02SC3731 D13515JJ4V0DS00 TC-5925B) D1351 ELLS 110 2SA1458 U110 5925B PDF

    2SA1455K

    Abstract: 2SC3722K T146 T147 OA95
    Text: 2SA1455K K ~7 > y 7s £ /'Transistors P N P '> U n > 2 S A 1 4 5 5 K Epitaxial Planar PNP Silicon Transistor £ i*E ftJ l& & g i£ ^ ig itiffl/H ig h Voltage Low Freq. Low Noise Amp. • ftft 1 » W E T * S o Vceo = -1 2 0 V 2) N F=0.2dB Typ.) (at V c e = —6V, lc = - 1 0 0


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    2SA1455K -I20V -120V -100mA, 2SC3722K. SC-59 2SA1455K 2SC3722K T146 T147 OA95 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC3710 HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm FEATURES: . Low Collector Saturation Voltage : VcE sat ~°-4V(Max.) 0 3.2 ±0.2 (at Ic=6A) . High Speed Switching Time : tstg= l.Ous(Typ.) Zli . Complementary to 2SA1452


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    2SC3710 2SA1452 20/is PDF

    2SA1452A

    Abstract: 2SC3710A
    Text: TOSHIBA 2SA1452A TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1452A HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm Low Collector Saturation Voltage r 2 '^ " 0 : VCE (sat)= - 0 .4 V (Max.) (at Iq = - 6 A )


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    2SA1452A 2SC3710A 2SA1452A 2SC3710A PDF

    Tr 2SA1576

    Abstract: 2SC4649 2sb1051
    Text: Tr T ransistürs • EM3, UMT, SMT SOT-23, SC-59 Type Type UM T — — 2SA1037KLN — — 2SA1455K — — 2SC2412KLN — — 2SC3722K 2SA1774 2SC4617 Vi I :)(V) •V,.^ Function EM3 SMT Low Noise lr (mA) Pc(mW)(Ta = 25"C) UMT, SMT EM3 hff V ce(V) Ir(mA)


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    OT-23, SC-59) 2SC4619 2SC4725 2SC4726 Tr 2SA1576 2SC4649 2sb1051 PDF

    2sa1452

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. • • • 2SA1452 Low Collector Saturation Voltage : v CE(sat)= —0.4V(Max.) (at Ic = -6A ) High Speed Switching Time : tgtg= 1.0,us (Typ.)


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    2SA1452 2SC3710. 2-10L1A 2sa1452 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1451A T O SH IBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Low Collector Saturation Voltage • V q e (sat)“ —0.4V (Max.) (at Ic = -6A ) High Speed Switching Time : tgtg^l.O^siTyp.)


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    2SA1451A 2SC3709A PDF

    ai 232 nec

    Abstract: IS955 D1351 transistor C982 CD 4011 IC al 232 nec 1S955 2SA1458 IC 7824 ST 5925B
    Text: - r — S • S /— K Silicon T ra n sisto r 2SA1458 R N P x t 7 + ' > ì& m m # 7 & ; p M '> >; □ x z + i& m v h =7 M 'y & r m » 0X4 o 7 f > / M i !Ü K o =i u 9 2.0±0.2 oau 7 ii'0 O 2 S C 3 7 3 1 1 =i > 7 ° ' / > ? ') V f ë m - C ë i t o T a = 25 "e)


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    2SA1458 02SC3731 D13515JJ4V0DS00 TC-5925B) ai 232 nec IS955 D1351 transistor C982 CD 4011 IC al 232 nec 1S955 2SA1458 IC 7824 ST 5925B PDF