c3710a
Abstract: 2SC3710A C371 2SA1452A
Text: C3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process C3710A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1452A
|
Original
|
PDF
|
2SC3710A
2SA1452A
c3710a
2SC3710A
C371
2SA1452A
|
Untitled
Abstract: No abstract text available
Text: C3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process C3710A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1452A
|
Original
|
PDF
|
2SC3710A
2SA1452A
2-10R1A
|
Untitled
Abstract: No abstract text available
Text: C3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process C3710A High-Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1452A
|
Original
|
PDF
|
2SC3710A
2SA1452A
2-10R1A
|
C3710A
Abstract: 2SA1452A 2SC3710A
Text: C3710A シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ C3710A 通 信 工 業 用 ○ 大電力スイッチング用 • 単位: mm コレクタ飽和電圧が低い。: VCE (sat) = 0.4 V (最大) (IC = 6 A) • スイッチング時間が速い。: tstg = 1.0 s (標準)
|
Original
|
PDF
|
2SC3710A
2SA1452A
2-10R1A
C3710A
2SA1452A
2SC3710A
|
c3710a
Abstract: 2SA1452A 2SC3710A
Text: C3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process C3710A High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1452A
|
Original
|
PDF
|
2SC3710A
2SA1452A
c3710a
2SA1452A
2SC3710A
|