2SC3149

Abstract: NPN 800V
Contextual Info: Product Specification www.jmnic.com 2SC3149 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High breakdown voltage: VCBO=900V Min ・Fast switching speed. ・Wide ASO (Safe Operating Area) APPLICATIONS ・800V/1.5A switching regulator applications

2SC3645

Contextual Info: Type No. 2SA 1257 2S A 1415 2 S A 1418 2 S A 1419 2S A 1552 2 S A 1682 2S A 1700 2S A 1740 2S A 1772 2 S A 1773 2SC3143 2SC3645 2SC 3648 2SC 3649 2SC4003 2SC4027 2SC4412 2SC 4548 2SC4597 2SC 4598 2SC4599 2SC 4600 2SC4601 2SC 4602 2SC 4615 2SC 4616 FX510 Page

2SA1258

Abstract: 2SC3144
Contextual Info: Ordering number:ENN1058D PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SA1258/2SC3144 60V/3A for High-Speed Drivers Applications Features Package Dimensions • High fT. · High switching speed. · Wide ASO. unit:mm 2010C [2SA1258/2SC3144] 10.2 3.6

2SC3149

Abstract: npn transistors 400V 0.1A 400C
Contextual Info: SavantIC Semiconductor Product Specification 2SC3149 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High breakdown voltage: VCBO=900V Min ·Fast switching speed. ·Wide ASO (Safe Operating Area) APPLICATIONS ·800V/1.5A switching regulator applications

2SC3148

Abstract: NPN VCEO 800V
Contextual Info: SavantIC Semiconductor Product Specification 2SC3148 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High collector breakdown voltage: VCEO=800V Min ·Excellent switching time: tr=1.0µs(Max.) tf=1.0µs(Max.@IC=0.8A APPLICATIONS ·Switching regulator and high voltage

2SA1258

Contextual Info: Ordering number:EN1058D PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SA1258/2SC3144 60V/3A for High-Speed Drivers Applications Features Package Dimensions • High fT. · High switching speed. · Wide ASO. unit:mm 2010C [2SA1258/2SC3144] JEDEC : TO-220AB

Contextual Info: TOSHIBA { D IS CR ET E/ OPT O } 9097250 TOSHIBA ~SÍ D IS C R E T E / O P T O c T | ciQi:i75Sa 0 0 0 7 b 4 3 ñ 5öC 0 7 6 ^ 3 2SC3148 Ü Y -JJ-f/ SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE.

Contextual Info: TOSHIBA 2SC3147 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 3 147 VHF BAND PO W ER AM PLIFIER APPLICATIONS Unit in mm 18.4±Q5 • Output Power • : High Efficiency : Po = 50W Min. (f = 175MHz, V ee = 12.5V, = 70% (Typ.) VC, —70% (Typ.)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SD157

Abstract: 2SD2238 2SC3692 2SD1833 2SD1277 2SD1577 2sd1590 2SC1847 2SC3258 2SD2239
Contextual Info: - 2 40 - tt m % Type No. 2SD 1410 / M 2SD 1411 M ¥ 2SD 1412 2SD 1413*— 2SD 1414 ^ 2SD 1415 ^ Manuf. 2SD 1420 2SD 1421 2SD 1423A 2SD 1424 s m NEC S ±L HITACHI 2SD1141 K H dr ìli FU JITSU fâ T MATSUSHITA 2SD1833 2SC3692 2SD1271 2SD1833 2SC3144 2SD1589

4336

Abstract: 2SC4846 2SD1634 4339 2SC3303 2SC3346 4327 2SC2735 2SC2847 2SC3142
Contextual Info: m « tt T y p e No. 2SC 4324 2SC 4325 2SC 4326 H € ✓ & SANYO Manuf. x s x s 2SC4871 □ —A 2SC3142 S TOSHIBA m. b NEC B ±L HITACHI g ± FU J I T S U m të T MA T S U S H I T A 2SC2735 2SC2847 2SD1412 2SD1444 2SC 4328 S a 2SC3258 2SC3869 2SC 4329

Contextual Info: Ordering n u m b e r:EN 1059D 2SA1259/2SC3145 PNP/NPN Epitaxial Planar Silicon Darlington Transistors 60V/5A High-Speed Drivers Applications F eatu res • High fj. • High switching speed. • Wide ASO. : 2SA1259 b solu te M axim um R atin gs at Ta = 25°C

ir5040

Abstract: 2SC3143 100w amp sanyo pa 2030a A1257 SANYO SS 1001 2SA1257 103 7707 transistor s 2065 af
Contextual Info: SA NY O S E M I C O N D U C T O R CORP SSE D 7 cic]7D7b 0 D 0 7 Q 4 S T 2SA1257, 2SC3143 T -2 7-09 PN P/N PN Epitaxial Planar Silicon Transistors 2 0 1 8A High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications 1057B F e a tu re s • V ery sm all-sized package p erm ittin g the 2SA1257/2SC3143-applied sets to be m ade sm all and slim

2SC3213

Abstract: 2SC3170 2SC3159 MP40 2sc3153 2sc3180n 2sc3211 2SC3157 2SA1263N 2SC3175
Contextual Info: - 148 - Ält iàü Jfcfcæfë Ta=25‘ C,*EDtàTc=25,C -6 •V-L /V rrj /ü ; Vc e o (V) 2SC3143 2SC3144 HV SW/LF A =i* 2SC3145 (V) . Pc Pc* (A) (W) (W) 0. 08 n m •C(DC) ICBO (max) ink) VcB (V) 0. 1 0.2 120 (min) hF E 60 180 160 HS Stf/D 70 60 3 1.75

2SC3147

Contextual Info: TOSHIBA 2SC3147 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 3 1 47 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm 1R4±Q5 Output Power High Efficiency : Po = 50W Min. (f= 175MHz, v e e = 1 2 .5 V , 7 c = 70%(Typ-) 7 c —70% (Typ.) MAXIMUM RATINGS (Tc = 25°C)

2SC3142

Abstract: L230P ITR05366 ITR05362 ITR05363 ITR05364 ITR05365 ITR05367 ITR05368 ITR05369
Contextual Info: 注文コード No. N 1 0 6 6 A 2SC3142 No. N 1 0 6 6 A 20100 ＊半導体ニューズ No.1066 とさしかえてください。 2SC3142 特長 NPN エピタキシァルプレーナ形シリコントランジスタ 高周波増幅用 ・FBET シリーズ。

Contextual Info: Ordering number:ENN1068C NPN Triple Diffused Planar Silicon Transistor 2SC3149 800V/1.5A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥900V . · High-speed switching. · Wide ASO. unit:mm 2010C [2SC3149] 10.2

2SC3143

Abstract: 2SA1257 EN1057
Contextual Info: Ordering number:EN1057B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1257/2SC3143 High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications Features Package Dimensions • Very small-sized package permitting the 2SA1257/ 2SC3143-applied sets to be made small and slim.

2SC3145

Abstract: 1059C 2SA1259
Contextual Info: 注文コード No.N 1 0 5 9 D 2SA1259 / 2SC3145 No. N1059D N0899 半導体ニューズ No.1059A ’ 91 大信号 D.B Vol.1 No.1059C とさしかえてください。 2SA1259 / 2SC3145 特長 PNP / NPN エピタキシァルプレーナ形シリコンダーリントントランジスタ

Contextual Info: 2SC3142J2 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)

3187K1

Abstract: Transistor BJD 2SA1259 2SC3145
Contextual Info: O rde rin g n u m b e r :EN 1059D 2SA1259/2SC3145 P N P /N P N E p itaxial P la n a r Silicon D arlington T ra n s isto r 60V/5A for High-Speed D rivers A pplications F eatu res • High fj. •H igh switching speed. • WideASO. : 2SA1259 A b s o l u t e M a x im u m R a t i n g s a t

T3HS

Contextual Info: SANYO SEMICONDUCTOR 22E CORP im Q lh D OOOLTSl T-3HS 2SC3142 N PN Epitaxial Planar Silicon Transistor 2018A High-Frequency General-Purpose Amp Applications 1066A Features . FBET s e r i e s . . C o m p a c t p a c k a g e e n a b l i n g c o m p a c tn e s s o f s e t s .

076z

Contextual Info: 2SC3148 SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS U nit in mm SWITCHING REGULATOR AND HIGH VOLTAGE. SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. • • •X 1 Excellent Switching Times I(} = 0.8A tr = 1 .0 / iS Max., tf=1.0//s Max.

2SC3149

Contextual Info: Inchange Semiconductor Product Specification 2SC3149 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High breakdown voltage: VCBO=900V Min ・Fast switching speed. ・Wide ASO (Safe Operating Area) APPLICATIONS ・800V/1.5A switching regulator applications