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    Panasonic Electronic Components 2SC31300QL

    RF TRANS NPN 10V 0.05A MINI3
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    DigiKey 2SC31300QL Reel 3,000
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    2SC3130 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC3130 Panasonic Silicon NPN epitaxial planer type Original PDF
    2SC3130 Panasonic Silicon NPN epitaxial planer type Original PDF
    2SC3130 Panasonic NPN Transistor Original PDF
    2SC3130 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3130 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SC3130 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3130 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3130 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC3130 Panasonic Si NPN epitaxial planar. RF amplifier, osc., mixer. Scan PDF
    2SC3130 Panasonic Transistor Selection Guide Scan PDF
    2SC31300QL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 10VCEO 50MA MINI-3 Original PDF
    2SC3130P Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SC3130P Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SC3130Q Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SC3130Q Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SC3130R Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF

    2SC3130 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3130

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3130 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2


    Original     		PDF 2002/95/EC) 2SC3130 2SC3130

    2SC3130

    Abstract: No abstract text available
    Text: Transistor 2SC3130 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm 0.40+0.10 ñ0.05 0.16+0.10 -0.06 ● 0.4±0.2 High transition frequency fT. Small collector output capacitance Cob and common base reverse transfer capacitance Crb.


    Original     		PDF 2SC3130 2SC3130

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3130 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2


    Original     		PDF 2002/95/EC) 2SC3130

    2SC3130

    Abstract: No abstract text available
    Text: Transistors 2SC3130 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • High transition frequency fT • Small collector output capacitance Common base, input open circuited Cob and reverse transfer capacitance (Common emitter) Crb


    Original     		PDF 2SC3130 2SC3130

    2SC3130

    Abstract: XP05531
    Text: Composite Transistors XP05531 Silicon NPN epitaxial planer transistor Unit: mm For high frequency, oscillation and mixing 0.65 1 6 2 5 3 4 2SC3130 x 2 elements • Absolute Maximum Ratings Parameter 1 : Emitter Tr1 2 : Base (Tr1) 3 : Base (Tr2) (Ta=25˚C)


    Original     		PDF XP05531 2SC3130 2SC3130 XP05531

    2SC3130

    Abstract: No abstract text available
    Text: Composite Transistors XP06531 Silicon NPN epitaxial planer transistor Unit: mm For high frequency amplification, oscillation, and mixing 1.25±0.1 0.65 2 5 3 4 ● 2SC3130 x 2 elements • Absolute Maximum Ratings 0 to 0.1 ■ Basic Part Number of Element


    Original     		PDF XP06531 2SC3130 2SC3130

    2SC3130

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3130 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 3


    Original     		PDF 2002/95/EC) 2SC3130 2SC3130

    2SC3130

    Abstract: No abstract text available
    Text: Transistor 2SC3130 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm +0.2 2.8 –0.3 Ta=25˚C Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO


    Original     		PDF 2SC3130 2SC3130

    2SC3130

    Abstract: XN01531 XN1531
    Text: Composite Transistors XN01531 XN1531 Silicon NPN epitaxial planer transistor Unit: mm For high frequency, oscillation and mixing +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SC3130 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN01531 XN1531) 2SC3130 2SC3130 XN01531 XN1531

    2SC3130

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3130 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 5˚ 2.8+0.2 –0.3 1.50+0.25 –0.05 Th an


    Original     		PDF 2002/95/EC) 2SC3130 2SC3130

    2SC3130

    Abstract: XN02531 XN2531
    Text: Composite Transistors XN02531 XN2531 Silicon NPN epitaxial planer transistor Unit: mm For high frequency, oscillation and mixing +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SC3130 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN02531 XN2531) 2SC3130 2SC3130 XN02531 XN2531

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3130 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2


    Original     		PDF 2002/95/EC) 2SC3130

    2SC3130

    Abstract: XN05531 XN5531
    Text: Composite Transistors XN05531 XN5531 Silicon NPN epitaxial planer transistor 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° 1.1+0.2 –0.1 2SC3130 x 2 elements ■ Absolute Maximum Ratings Parameter 0 to 0.1 ● (Ta=25˚C)


    Original     		PDF XN05531 XN5531) 2SC3130 2SC3130 XN05531 XN5531

    2SC3130

    Abstract: XN2531
    Text: Composite Transistors XN2531 Silicon NPN epitaxial planer transistor Unit: mm For high frequency, oscillation and mixing +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SC3130 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN2531 2SC3130 2SC3130 XN2531

    2SC3130

    Abstract: XN1531
    Text: Composite Transistors XN1531 Silicon NPN epitaxial planer transistor Unit: mm For high frequency, oscillation and mixing +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SC3130 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN1531 2SC3130 2SC3130 XN1531

    2SC3130

    Abstract: XP05531
    Text: Composite Transistors XP05531 Silicon NPN epitaxial planer transistor Unit: mm For high frequency, oscillation and mixing 0.65 1 6 2 5 3 4 2SC3130 x 2 elements • Absolute Maximum Ratings Parameter 1 : Emitter Tr1 2 : Base (Tr1) 3 : Base (Tr2) (Ta=25˚C)


    Original     		PDF XP05531 2SC3130 2SC3130 XP05531

    xp06531

    Abstract: No abstract text available
    Text: Composite Transistors XP06531 Silicon NPN epitaxial planer transistor Unit: mm For high frequency amplification, oscillation, and mixing 0.65 1 6 2 5 3 4 2SC3130 x 2 elements • Absolute Maximum Ratings Parameter 1 : Emitter Tr1 2 : Emitter (Tr2) 3 : Base (Tr2)


    Original     		PDF XP06531 2SC3130 xp06531

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2sc3943

    Abstract: 2SC4117 2sc2060 2SC2553 2SC3170 2SC4258 2SC2242 2SC3536 4181A 2SC3039
    Text: - 184 - a « Type No. tt « Manuf. 2SC 4179 a a 2SC 4180 y s w 2SC 4181 m K ^ 2SC 4181A 2SC 4182 ^ H * SANYO 2SC4400 M TOSHIBA £ NEC B tL HITACHI V ± il F U J ITSU fô T MATSUSHITA 2SC4253 2SC3936 2SC4117 2SD1821 H £ MITSUBISHI 2SC4258 2SC3938 2SC4116 —


    OCR Scan     		PDF 2SC4400 2SC4253 2SC3936 2SC4258 2SC4098 2SC4117 2SD1821 2SC4102 2SC4413 2SD1824 2sc3943 2SC4117 2sc2060 2SC2553 2SC3170 2SC2242 2SC3536 4181A 2SC3039

    4288A

    Abstract: 2sc3936 hitachi 4269 2SC4903 2SC3874 2SC3995 2SC4186 2SC3931 2SC3210 2SC4083
    Text: - 18 6 - Si € Type No. tt € Manuf. 1nJ 1“ ^ £ tN 2SC 4247 2SC 4248 2SC 4249 H * SANYO a s£ % TOSHIBA NEC ± a FUJITSU % T MATSUSHITA 2SC4404 2SC4186 2SC4903 2SC3934 2SC4404 2SC4186 2SC4264 2SC3934 2SC4263 2SC3931 2SC4400 2SC 4250 tL HITACHI H £ MITSUBISHI


    OCR Scan     		PDF 2SC4404 2SC4186 2SC4903 2SC3934 2SC4264 2SC4083 2SC4400 4288A 2sc3936 hitachi 4269 2SC4903 2SC3874 2SC3995 2SC3931 2SC3210 2SC4083

    Toshiba 355-1

    Abstract: 2SC3555 3563 2SC351 2SC4158 2SC3531 2sc3153 2SC3170 NEC 3552 2SC3556
    Text: 166 - m % Type No. 2SC 3534 J 2SC 3535 ^ 2SC 3536 V 2SC 3540 ^ tt B m. B B V m ì s 2SC 3544 , 2SC 3545 ^ 2SC 3546 B B m 2SC 3547 2SC 3547A 2SC 3547B 36 $ S $ 3548 3549 3550 3551 3552 3553 3554 3555 3556 3557 3558 3559 3560 3561 3562 S JE S S 2 / *±S» * ± * »


    OCR Scan     		PDF 2SC4427 2SC3657 2SC3322 2SC3506 2SC4428 2SD1431 2SC3507 2SC4429 2SD1433 2SC3258 Toshiba 355-1 2SC3555 3563 2SC351 2SC4158 2SC3531 2sc3153 2SC3170 NEC 3552 2SC3556