2SC1568
Abstract: 2SA900
Text: Inchange Semiconductor Product Specification 2SC1568 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA900 ·Low collector saturation voltage APPLICATIONS ·For low voltage type medium output power amplification PINNING
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2SC1568
O-126
2SA900
500mA
-50mA
200MHz
2SC1568
2SA900
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2SA900
Abstract: 2SC1568
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA900 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -18V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Complement to Type 2SC1568 APPLICATIONS
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2SA900
2SC1568
-50mA
-50mA;
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2SC1568
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2SA0900
Abstract: 2SC1568 2SC156
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
2SC1568
2SA0900
O-126B-A1
2SA0900
2SC1568
2SC156
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2SC1568
Abstract: 2sc* pnp 2SA0900 2SA900
Text: Power Transistors 2SA0900 2SA900 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency output amplification Complementary to 2SC1568 3.2±0.2 1.9±0.1 3.05±0.1 • Low collector to emitter saturation voltage VCE(sat) • TO-126B package which requires no insulation plate for installation to the heat sink
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2SA0900
2SA900)
2SC1568
O-126B
2SC1568
2sc* pnp
2SA0900
2SA900
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2SA900
Abstract: 2SC1568
Text: JMnic Product Specification 2SA900 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC1568 ・Low collector saturation voltage APPLICATIONS ・For audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter
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2SA900
O-126
2SC1568
-500mA
-50mA
2SA900
2SC1568
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2SC1568
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
2SC1568
2SA0900
2SC1568
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
2SC1568
2SA0900
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Untitled
Abstract: No abstract text available
Text: 2SC1568 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)18 I(C) Max. (A)1 Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain.90 h(FE) Max. Current gain.360
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2SC1568
Freq150MÃ
StyleTO-126
Code3-140
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
2SC1568
2SA0900
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2SA900
Abstract: 2SC1568
Text: SavantIC Semiconductor Product Specification 2SA900 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC1568 ·Low collector saturation voltage APPLICATIONS ·For audio frequency power amplifier PINNING PIN DESCRIPTION 1
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2SA900
O-126
2SC1568
-500mA
-50mA
2SA900
2SC1568
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2SA0900
Abstract: 2SA900 2SC1568
Text: Power Transistors 2SC1568 Silicon NPN epitaxial planar type Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • Low collector to emitter saturation voltage VCE sat • Satisfactory operation performances and high efficiency with a low-voltage power supply • TO-126B package which incorporates a unique construction enabling installation to the heat sink without using insulation parts
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2SC1568
O-126B
2SA0900
2SA900)
2SA0900
2SA900
2SC1568
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2SA0900
Abstract: 2SC1568 shelf life
Text: Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol 0.75±0.1 Rating 0.5±0.1
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2SC1568
2SA0900
2SA0900
2SC1568
shelf life
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2SC1568
Abstract: 2SA0900
Text: Power Transistors 2SC1568 Silicon NPN epitaxial planar type Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • Low collector to emitter saturation voltage VCE sat • Satisfactory operation performances and high efficiency with a low-voltage power supply • TO-126B package which incorporates a unique construction enabling installation to the heat sink without using insulation parts
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2SC1568
O-126B
2SA0900
2SC1568
2SA0900
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2SA0900
Abstract: 2SC1568
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
2SC1568
2SA0900
O-126B-A1
2SA0900
2SC1568
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Audio Output Transistor Amplifier
Abstract: 2SA900 2SC1568
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA900 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -18V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Complement to Type 2SC1568 APPLICATIONS
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2SA900
2SC1568
-50mA
-50mA;
Audio Output Transistor Amplifier
2SA900
2SC1568
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2Sc1568
Abstract: No abstract text available
Text: Power Transistors 2SC1568 Silicon NPN epitaxial planar type Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • Low collector to emitter saturation voltage VCE sat • Satisfactory operation performances and high efficiency with a low-voltage power supply • TO-126B package which incorporates a unique construction enabling installation to the heat sink without using insulation parts
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2SC1568
2SA0900
O-126B
2Sc1568
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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2sc1589
Abstract: 2SC1502 2SC1583 2SC1575 2SC1508 2sc1589 equivalent 2SC1598 2SC1528 2SC1588 2SC1591
Text: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) 2SC1501 (V) Electrical characteristics (Ta=25ºC) Tj DC Current Gain hFE fab/ft* VCE Ic (ºC) (MHz) (V) (mA) (mA) (mW) 300 5 100 2SC1503 50 3A 2SC1504 400 6 2SC1505 300 7 200 2SC1506 300 7 200
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2SC1501
2SC1503
2SC1504
2SC1505
2SC1506
2SC1507
2SC1508
2SC1509
2SC1510
2SC1511
2sc1589
2SC1502
2SC1583
2SC1575
2SC1508
2sc1589 equivalent
2SC1598
2SC1528
2SC1588
2SC1591
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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204S60
Abstract: 2SC1568 2SA900 2SC15
Text: Power T ransistors 2SC15Ó8 2SC1568 Silicon NPN Epitaxial Planar Type Package Dim ensions Medium Power Am plifier for Low Voltage Supply Com plem entary Pair with 2SA900 • Features • Low collector-emitter saturation voltage VcEcsa» • High performance at low supply voltage
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OCR Scan
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2SC15Ã
2SC1568
2SA900
O-126
bR32flS2
lb351
bT32fl52
001b352
204S60
2SC1568
2SA900
2SC15
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BC132A
Abstract: 2SA900 2SC1568
Text: PANASONIC INDL/ELEKiSENI} 7SC D J t^32flS4 ÜODfl?! 1 "|T •_T- ys.-i7 S 2 A 9 '> U 2SA900 P N P x hf $ 4- '> t \/ ~f \s — i~ f l2 /S i P N P Epitaxial Planar Power Amplifier > ~fl) S > $ U/ Complementary Pair with 2SC1568 • 4# ^ / F e a t u r r e s
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OCR Scan
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bc132AS4
2SA900
2SC1568
2SC1568
O-126
O-126
BC132A
2SA900
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PDF
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2SA900
Abstract: 2SC1568
Text: AOK AOK Semiconductor Product Specification 2SA900 S ilicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2SC1568 • Low collector saturation voltage APPLICATIONS • For audio frequency power amplifier PINNING PIN DESCRIPTION
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OCR Scan
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2SA900
O-126
2SC1568
-50mA
-500mA
2SC1568
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PDF
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2SA900
Abstract: 2SC15 2SC1568
Text: Power T ransistors 2SC15Ó8 2SC1568 Silicon NPN Epitaxial Planar Type Package Dim ensions Medium Power Am plifier for Low Voltage Supply Com plem entary Pair with 2SA900 • Features • Low collector-em itter saturation voltage V cE (.t> • High perform ance a t low supply voltage
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OCR Scan
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2SC15Ã
2SC1568
2SA900
O-126
bR320S2
2SA900
2SC15
2SC1568
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PDF
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la 7610
Abstract: 2SA900 2SC1568
Text: Power T ransistors 2SA900 2SA900 Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SC1568 •Features • L ow c o lle c to r-e m itte r sa tu ra tio n v o lta g e V Unit ! mm 3.2 ±0.2 c e i s» i i mt • T O -1 2 6 p ack ag e , no in s u la to r n e e d e d w h e n fixing to a h e a t sink
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2SA900
2SC1568
O-126
la 7610
2SA900
2SC1568
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