2SA0900
Abstract: 2SC1568 2SC156
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
2SC1568
2SA0900
O-126B-A1
2SA0900
2SC1568
2SC156
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2SA0900
Abstract: 2SA900 2SC1868
Text: Power Transistors 2SA0900 2SA900 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency Power amplification Complementary to 2SC1868 3.2±0.2 1.9±0.1 3.05±0.1 • Low collector-emitter saturation voltage VCE(sat) • TO-126B package which requires no insulation plate for installation to the heat sink
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2SA0900
2SA900)
2SC1868
O-126B
2SA0900
2SA900
2SC1868
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PDF
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2SC1568
Abstract: 2sc* pnp 2SA0900 2SA900
Text: Power Transistors 2SA0900 2SA900 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency output amplification Complementary to 2SC1568 3.2±0.2 1.9±0.1 3.05±0.1 • Low collector to emitter saturation voltage VCE(sat) • TO-126B package which requires no insulation plate for installation to the heat sink
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2SA0900
2SA900)
2SC1568
O-126B
2SC1568
2sc* pnp
2SA0900
2SA900
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PDF
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2SC1568
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
2SC1568
2SA0900
2SC1568
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2SA0900
Abstract: 2SA900 2SC1868
Text: Power Transistors 2SA0900 2SA900 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency Power amplification Complementary to 2SC1868 3.2±0.2 1.9±0.1 16.0±1.0 M Di ain sc te on na tin nc ue e/ d • Low collector-emitter saturation voltage VCE(sat)
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2SA0900
2SA900)
2SC1868
O-126B
2SA0900
2SA900
2SC1868
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C
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Original
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2002/95/EC)
2SC1568
2SA0900
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
2SC1568
2SA0900
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PDF
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2SA0900
Abstract: 2SA900 2SC1868
Text: Power Transistors 2SA0900 2SA900 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency Power amplification Complementary to 2SC1868 3.2±0.2 1.9±0.1 11.0±0.5 3.05±0.1 • Low collector-emitter saturation voltage VCE(sat) • TO-126B package which requires no insulation plate for installation to the heat sink
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2SA0900
2SA900)
2SC1868
O-126B
2SA0900
2SA900
2SC1868
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PDF
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2SA0900
Abstract: 2SC1568 shelf life
Text: Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol 0.75±0.1 Rating 0.5±0.1
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2SC1568
2SA0900
2SA0900
2SC1568
shelf life
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PDF
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2SA0900
Abstract: 2SC1568
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
2SC1568
2SA0900
O-126B-A1
2SA0900
2SC1568
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PDF
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SA0900 2SA900 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency Power amplification Complementary to 2SC1868 3.2±0.2 1.9±0.1 3.05±0.1 • Low collector-emitter saturation voltage VCE(sat) • TO-126B package which requires no insulation plate for installation to the heat sink
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Original
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2SA0900
2SA900)
2SC1868
O-126B
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PDF
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SA0900 2SA900 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency Power amplification Complementary to 2SC1868 3.2±0.2 16.0±1.0 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow
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2SA0900
2SA900)
2SC1868
O-126B
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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2SA0900
Abstract: 2SA900 2SC1568
Text: Power Transistors 2SC1568 Silicon NPN epitaxial planar type Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • Low collector to emitter saturation voltage VCE sat • Satisfactory operation performances and high efficiency with a low-voltage power supply • TO-126B package which incorporates a unique construction enabling installation to the heat sink without using insulation parts
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2SC1568
O-126B
2SA0900
2SA900)
2SA0900
2SA900
2SC1568
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PDF
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2SC1568
Abstract: 2SA0900
Text: Power Transistors 2SC1568 Silicon NPN epitaxial planar type Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • Low collector to emitter saturation voltage VCE sat • Satisfactory operation performances and high efficiency with a low-voltage power supply • TO-126B package which incorporates a unique construction enabling installation to the heat sink without using insulation parts
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Original
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2SC1568
O-126B
2SA0900
2SC1568
2SA0900
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PDF
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2Sc1568
Abstract: No abstract text available
Text: Power Transistors 2SC1568 Silicon NPN epitaxial planar type Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • Low collector to emitter saturation voltage VCE sat • Satisfactory operation performances and high efficiency with a low-voltage power supply • TO-126B package which incorporates a unique construction enabling installation to the heat sink without using insulation parts
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2SC1568
2SA0900
O-126B
2Sc1568
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K 2411
Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Text: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type
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OCR Scan
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3SK241
T0220F
K 2411
k2411
IX 3354
a699a
3SK2411
2Sa1950
T092L
2SB0774
3SK271
c 5019
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2SB0774
Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Text: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)
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OCR Scan
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O-126
2SC2258
2SC3063
2SC5340
O-202
T0-220
O-220F
2SC2923
2SC4714
2SC3942
2SB0774
2SA2004
2SB160
2SB642
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A1534
Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin
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OCR Scan
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T0-92
T092L:
T0220F
T0220
T092NL
A1534
T092
2SB642
T092L
2SB0774
SS-Mini 3
2SA1495
2SB946
2SA1124
A1534A
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2SC5224
Abstract: 2SA1949 2SB1573 2SD2407 A1534A 2SB0774 2SB1576 2SB946 T0-92N 2SA1951
Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions U Type (D36) TO-126 (D49 * , D50) MT3 Type (D40) MT4 Type (D41) TO-202 (D51) T0-220(a) (D52) TO-220F (D55) 2SC1398A
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OCR Scan
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O-126
O-202
T0-220
2SC1398A
2SB1573
2SD2407
O-220F
T0220F
T0220
2SC5224
2SA1949
2SD2407
A1534A
2SB0774
2SB1576
2SB946
T0-92N
2SA1951
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