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    Amphenol Aerospace JT07RE-22-2SC(106)

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    Amphenol Aerospace JT00P-18-32SC(106)

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    Amphenol Aerospace JT07A-18-32SC(106)

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    Amphenol Aerospace JT02A-18-32SC(106)

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    Amphenol Aerospace JT06RE-12-22SC(106)

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    2SC106 Datasheets (117)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC106 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC106 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC106 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC106 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC106 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC106 Unknown Vintage Transistor Datasheets Scan PDF
    2SC106 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC106 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC106 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC106 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC106 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC106 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC106 Unknown Cross Reference Datasheet Scan PDF
    2SC1060 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC1060 Micro Electronics Semiconductor Device Data Book Scan PDF
    2SC1060 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SC1060 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC1060 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC1060 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC1060 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2SC106 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC1061

    Abstract: 2SC1060 2Sc1060 equivalent 2SA671 2SC1061 C
    Text: Product Specification www.jmnic.com 2SC1061 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low saturation voltage ・Complement to type 2SA671 ・Note: type 2SC1060 with short pin APPLICATIONS ・For use in low frequency power amplifier applications


    Original     		PDF 2SC1061 O-220 2SA671 2SC1060 2SC1061 2Sc1060 equivalent 2SA671 2SC1061 C

    2SC1061

    Abstract: 2SC1060 2Sc1060 equivalent 2SC1061 B 2sc1061 equivalent 2sc1061 datasheet 2SA671
    Text: Inchange Semiconductor Product Specification 2SC1061 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low saturation voltage ・Complement to type 2SA671 ・Note: type 2SC1060 with short pin APPLICATIONS ・For use in low frequency power


    Original     		PDF 2SC1061 O-220 2SA671 2SC1060 2SC1061 2Sc1060 equivalent 2SC1061 B 2sc1061 equivalent 2sc1061 datasheet 2SA671

    2SA671

    Abstract: 2SC1061 2SA670 2SC1061 PNP
    Text: JMnic Product Specification 2SA671 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC1061 ・Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS ・Designed for use in low frequency power amplifier applications


    Original     		PDF 2SA671 O-220 2SC1061 2SA670 O-220) 2SA671 2SC1061 2SC1061 PNP

    2SC1061

    Abstract: Transistor 2sC1061 2SA671 2sA671 transistor 2sC1061 transistor 2SC1061 PNP
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA671 DESCRIPTION •Low Collector Saturation Voltage: VCE SUS = -1.0V(Max)@ IC= -2.0A ·DC Current Gain : hFE= 35-320@ IC= -0.5A ·Complement to Type 2SC1061 APPLICATIONS ·Designed for use in low frequency power amplifier


    Original     		PDF 2SA671 2SC1061 2SC1061 Transistor 2sC1061 2SA671 2sA671 transistor 2sC1061 transistor 2SC1061 PNP

    2SC1061

    Abstract: 2sc1060 2SA671 2SC1061 C 2SC1061-C
    Text: SavantIC Semiconductor Product Specification 2SC1061 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Low saturation voltage ·Complement to type 2SA671 ·Note: type 2SC1060 with short pin APPLICATIONS ·For use in low frequency power amplifier applications


    Original     		PDF 2SC1061 O-220 2SA671 2SC1060 2SC1061 2SA671 2SC1061 C 2SC1061-C

    2SC1061

    Abstract: 2SA671 2sA671 transistor Transistor 2sC1061 2sa671 equivalent 2sC1061 transistor 2sc1061 equivalent
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA671 DESCRIPTION •Low Collector Saturation Voltage: VCE SUS = -1.0V(Max)@ IC= -2.0A ·DC Current Gain : hFE= 35-320@ IC= -0.5A ·Complement to Type 2SC1061 APPLICATIONS ·Designed for use in low frequency power amplifier


    Original     		PDF 2SA671 2SC1061 2SC1061 2SA671 2sA671 transistor Transistor 2sC1061 2sa671 equivalent 2sC1061 transistor 2sc1061 equivalent

    2SC1061

    Abstract: 2SA671 transistor 2SC1061 2sA671 transistor
    Text: 2SA671 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SC1061 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)


    Original     		PDF 2SA671 O-220 2SC1061 2SC1061 2SA671 transistor 2SC1061 2sA671 transistor

    2SC1061

    Abstract: transistor 2SC1061 2sc1061 npn transistor datasheet 2SA671 2sc1061 npn transistor
    Text: 2SC1061 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SA671 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)


    Original     		PDF 2SC1061 O-220 2SA671 2SC1061 transistor 2SC1061 2sc1061 npn transistor datasheet 2SA671 2sc1061 npn transistor

    2sa671

    Abstract: 2SA670 2SC1061 2sa671 equivalent 2SC1061 PNP
    Text: SavantIC Semiconductor Product Specification 2SA671 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1061 ·Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS ·Designed for use in low frequency


    Original     		PDF 2SA671 O-220 2SC1061 2SA670 O-220) 2sa671 2SC1061 2sa671 equivalent 2SC1061 PNP

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2SA670

    Abstract: 2SA671 2SC1061
    Text: Inchange Sem iconductor Product Specification S ilicon PNP Power Transistors 2SA671 DESCRIPTION • With T 0 2 2 0 package • Complement to type 2SC1061 • Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS - /*v • Designed for use in low frequency


    OCR Scan     		PDF 2SA671 T0220 2SC1061 2SA670 2SC1061

    2SC1061

    Abstract: transistor 2SC1061 2sC1061 transistor 2SA671 2sc1061 npn transistor 2SC1061 PNP 2SC1061 f L50C power Transistor 2SC1061
    Text: Æ&m o s p e c NPN SILICON POWER TRANSISTORS NPN .designed for use in low frequency power amplifier applications 2SC1061 FEATURES: * Low Collector-Emitter Saturation Voltage v CE satf 1 0 V (Max @ I c =2.0A,I b=0.2A * DC Current Gain hFE= 35-320@lc= 0.5A


    OCR Scan     		PDF 2SA671 2SC1061 transistor 2SC1061 2sC1061 transistor 2SA671 2sc1061 npn transistor 2SC1061 PNP 2SC1061 f L50C power Transistor 2SC1061

    2SC789

    Abstract: 2sc1060 2SC1061 250314 2SD331 2SA473 2SA489 2SA490 2SA670 2SA671
    Text: TYPE NO. P O L A R IT Y Pow er Transistors CASE M A X IM U M r a t in g s 'c pd IW A) V CEO (V) V C E (S A T ) h fe min max 'c (A) VCE (V) max 'c (V) (A) fT min COM PLE­ (M Hz) TYPE 2SC789 2SC790 2SC1060 2SC1061 2 S C 1 17 3 2SC1626 N N N N N N T O -22 0


    OCR Scan     		PDF 2SC789 O-220 2SA489 2SC790 2SA490 2SC1060 2SA670 2SC1061 250314 2SD331 2SA473 2SA489 2SA490 2SA670 2SA671

    60B120

    Abstract: 2SA671 2SC1061
    Text: ¿Z&MOSPEC PNP SILICON POWER TRANSISTORS PNP 2SA671 .designed for use in iow frequency power amplifier applications FEATURES: * Low Collector-Emitter Saturation Voltage VCE satf @ ic=2.0A,lB=0.2A * DC Current Gain hFE= 35-320@lc= 0.5A * Complememtary to NPN 2SC1061


    OCR Scan     		PDF 2SC1061 2SA671 60B120 2SC1061

    2SK 150A

    Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
    Text: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2SK 150A mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N

    oms 450

    Abstract: PT2622 2N1841 BLY81 2SC115 BLY74 M06G A515 B3570 B3571
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E No. H H TYPE No. I I M IN . ID E R A T E J to C M AX Pc


    OCR Scan     		PDF NPN110. 350kA 2N2342t 550kA 2N2343 BLY81 25OuA0 400nS BLY87 oms 450 PT2622 2N1841 2SC115 BLY74 M06G A515 B3570 B3571

    2N5036

    Abstract: TRANSISTOR BV 32 2N5035 2N5034 FZJ 101 usaf516es047m 2N5034 package 2N5425 B170000 fzj 165
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF NPN110. PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2N5036 TRANSISTOR BV 32 2N5035 2N5034 FZJ 101 usaf516es047m 2N5034 package 2N5425 B170000 fzj 165

    M-8124

    Abstract: usaf516es047m usaf517es060m transistor af138 BA109 FZJ 131 2SA314 987T1 988T1 989T1
    Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 M-8124 usaf516es047m usaf517es060m transistor af138 BA109 FZJ 131 2SA314 987T1 988T1 989T1

    2n1841

    Abstract: 78m5 2SA248 2SA478 2N2234 transistor m014 2SC23 2SC24 2SC437 2SC438
    Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT


    OCR Scan     		PDF NPN110. USAF520ES070M 2N1508 50M5A 13On0 32On0 600di 2N1509 2n1841 78m5 2SA248 2SA478 2N2234 transistor m014 2SC23 2SC24 2SC437 2SC438

    2sa648 transistor

    Abstract: usaf516es047m STC5204 usaf517es060m 2SA614 ST9001 usaf516es048m STC5610 st*5519 BD538
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2sa648 transistor usaf516es047m STC5204 usaf517es060m 2SA614 ST9001 usaf516es048m STC5610 st*5519 BD538

    2SC114 transistor

    Abstract: transistor 2SC114 2SC114 BSS43 D28A9 FZJ 101 FZJ 131 VX3866 MHT5001 usaf516es047m
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2SC114 transistor transistor 2SC114 2SC114 BSS43 D28A9 FZJ 101 FZJ 131 VX3866 MHT5001 usaf516es047m

    2N2886

    Abstract: FZJ 131 2SC15-1 2SC111 usaf516es047m 2SC109 BF119 BF140 j-120 2SC153
    Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2N2886 FZJ 131 2SC15-1 2SC111 usaf516es047m 2SC109 BF119 BF140 j-120 2SC153

    SFT307

    Abstract: usaf516es047m 2N2626 2N2624 2N2625 usaf516es048m FZJ 101 SFT308 usaf517es060m 2G302
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 SFT307 usaf516es047m 2N2626 2N2624 2N2625 usaf516es048m FZJ 101 SFT308 usaf517es060m 2G302

    2n1620

    Abstract: 2n1958 oms 450 2N1617/I 2N1619 2SC114 SOT1156
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E No. t * # § 40°c H H TYPE N o. I I M IN . M A X P c ID E R A T E


    OCR Scan     		PDF