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    2SB767 Search Results

    2SB767 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB767 Kexin Silicon PNP Epitaxial Planar Type Original PDF
    2SB767 Panasonic Silicon PNP Transistor Original PDF
    2SB767 Panasonic Silicon PNP epitaxial planer type Original PDF
    2SB767 TY Semiconductor Silicon PNP Epitaxial Planar Type - SOT-89 Original PDF
    2SB767 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB767 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB767 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB767 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB767 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB767 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SB767 Unknown Japanese Transistor Cross References (2S) Scan PDF

    2SB767 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SB767

    Abstract: 2SD875 transistor marking CS
    Text: Transistor 2SB767 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD875 Unit: mm • Absolute Maximum Ratings * Ratings Unit Collector to base voltage VCBO –80 V Collector to emitter voltage VCEO –80 V Emitter to base voltage


    Original     		2SB767 2SD875 2SB767 2SD875 transistor marking CS PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767 (2SB767) Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1.5±0.1 0.4 max. 45˚ 3.0±0.15 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		2002/95/EC) 2SB0767 2SB767) 2SD0875 2SD875) PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767 (2SB767) Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 3 2 0.5±0.08 1.0+0.1 –0.2 1 0.4±0.08 0.4±0.04 M Di ain sc te on na tin nc


    Original     		2002/95/EC) 2SB0767 2SB767) 2SD0875 2SD875) PDF

    2SB0767

    Abstract: 2SB767 2SD0875 2SD875
    Text: Transistor 2SD0875 2SD875 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 * 1.5±0.1 2.5±0.1 0.4±0.04 3° (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO


    Original     		2SD0875 2SD875) 2SB0767 2SB767) 2SB0767 2SB767 2SD0875 2SD875 PDF

    2SB0767

    Abstract: 2SB767 2SD0875 2SD875
    Text: Transistors 2SD0875 2SD875 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO


    Original     		2SD0875 2SD875) 2SB0767 2SB767) 2SB0767 2SB767 2SD0875 2SD875 PDF

    2SB0767

    Abstract: 2SB767 2SD0875 2SD875
    Text: Transistor 2SB0767 2SB767 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD0875 (2SD875) Unit: mm • Absolute Maximum Ratings * Ratings Unit Collector to base voltage VCBO –80 V Collector to emitter voltage


    Original     		2SB0767 2SB767) 2SD0875 2SD875) 2SB0767 2SB767 2SD0875 2SD875 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 1.5±0.1 1.5±0.1 Parameter Symbol Rating


    Original     		2002/95/EC) 2SD0875 2SD875) 2SB0767 2SB767) PDF

    2SB0767

    Abstract: 2SB767 2SD0875 2SD875
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 • Features 3


    Original     		2002/95/EC) 2SD0875 2SD875) 2SB0767 2SB767) 2SB0767 2SB767 2SD0875 2SD875 PDF

    2SB0767

    Abstract: 2SB767 2SD0875 2SD875
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 3 2 0.5±0.08 1.5±0.1 Collector-base voltage (Emitter open)


    Original     		2002/95/EC) 2SD0875 2SD875) 2SB0767 2SB767) 2SB0767 2SB767 2SD0875 2SD875 PDF

    2SB0767

    Abstract: 2SB767 2SD0875 2SD875
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1


    Original     		2002/95/EC) 2SD0875 2SD875) 2SB0767 2SB767) 2SB0767 2SB767 2SD0875 2SD875 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SB0767 2SB767 Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1 0.4±0.08 1.5±0.1 Parameter Rating Unit VCBO −80 V Collector to emitter voltage VCEO −80 V Emitter to base voltage VEBO −5 V Peak collector current


    Original     		2SB0767 2SB767) 2SD0875 2SD875) PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1


    Original     		2002/95/EC) 2SD0875 2SD875) 2SB0767 2SB767) PDF

    2SB0767

    Abstract: 2SB767 2SD0875 2SD875
    Text: Transistor 2SD0875 2SD875 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm * 2.5±0.1 +0.25 4.0–0.20 0.4max. 0.4±0.08 0.5±0.08 1.5±0.1 • Absolute Maximum Ratings Parameter 45° +0.1


    Original     		2SD0875 2SD875) 2SB0767 2SB767) 2SB0767 2SB767 2SD0875 2SD875 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD0875 2SD875 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 * 1.5±0.1 2.5±0.1 0.4±0.04 3° (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO


    Original     		2SD0875 2SD875) 2SB0767 2SB767) PDF

    2SB0767

    Abstract: 2SB767 2SD0875 2SD875
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767 (2SB767) Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 1 0.4±0.08 1.5±0.1 Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)


    Original     		2002/95/EC) 2SB0767 2SB767) 2SB0767 2SB767 2SD0875 2SD875 PDF

    2SB0767

    Abstract: 2SB767 2SD0875 2SD875
    Text: Transistors 2SB0767 2SB767 Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1.5±0.1 0.4 max. 45˚ 3.0±0.15 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −80 V Collector-emitter voltage (Base open)


    Original     		2SB0767 2SB767) 2SD0875 2SD875) 2SB0767 2SB767 2SD0875 2SD875 PDF

    marking CQ

    Abstract: 2SB767 Collector-base voltage -80 V Collector-emitter voltage -80 V Emitter-base voltage -5 V
    Text: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SB767 Features Large collector power dissipation PC High collector-emitter voltage Base open VCEO Mini type package, allowing downsizing of the equipment and automatic Absolute Maximum Ratings Ta = 25


    Original     		2SB767 marking CQ 2SB767 Collector-base voltage -80 V Collector-emitter voltage -80 V Emitter-base voltage -5 V PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SB767 Features Large collector power dissipation PC High collector-emitter voltage Base open VCEO Mini type package, allowing downsizing of the equipment and automatic Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating


    Original     		2SB767 PDF

    2SB0767

    Abstract: 2SB767 2SD0875 2SD875
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767 (2SB767) Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 For low-frequency output amplification Complementary to 2SD0875 (2SD875) 1.6±0.2 3 2 0.5±0.08 1.0+0.1 –0.2 1


    Original     		2002/95/EC) 2SB0767 2SB767) 2SD0875 2SD875) 2SB0767 2SB767 2SD0875 2SD875 PDF

    2SB0767

    Abstract: 2SB767 2SD0875 2SD875
    Text: Transistor 2SB0767 2SB767 Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 3 0.4±0.08 1.5±0.1 Rating Unit VCBO −80 V Collector to emitter voltage VCEO −80 V Emitter to base voltage VEBO −5 V Peak collector current


    Original     		2SB0767 2SB767) 2SD0875 2SD875) 2SB0767 2SB767 2SD0875 2SD875 PDF

    2SD875

    Abstract: 2SB767
    Text: Transistor 2SD875 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB767 Unit: mm 0.5±0.08 1.5±0.1 • Absolute Maximum Ratings 2.5±0.1 0.4±0.04 3.0±0.15 Ta=25˚C 3 * +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1


    Original     		2SD875 2SB767 2SD875 2SB767 PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    2SB816

    Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
    Text: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3


    OCR Scan     		2SA1253 2SB849 2SB775 2SA1264 2SB965 2SB1371 2SA1264 2SB1372 2SB816 2SA1265 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416 PDF

    b 817

    Abstract: toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a 2SA1194
    Text: - £ Type No. jcg 7 |3 £ Manuf. & T T S « B m SANYO 2SA1703 2SB 793A 2SB 794 2SB 795 fé 2SB 798 2SB 799 . B S b a B H 2SB1119 2SB1122 2SAI 416 m B « 2SB1122 2SB1122 2SA1416 2SA1416 2SA1416 2SA1418 2SB 813 2SB 814 . 2SB 815 2SB 816 _ 2SB 817 ✓ 2SB 818


    OCR Scan     		2SA1703 2SB909M 2SA1705 2SB1044M 2SB1214 2SA1194 2SB1272 2SB76500 2SB1119 b 817 toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a PDF