2SB1490
Abstract: 2SD2250
Text: Power Transistors 2SB1490 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2250 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –160
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2SB1490
2SD2250
2SB1490
2SD2250
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1490 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD2250 1.0±0.2 Unit Collector-base voltage Emitter open VCBO −160 V Collector-emitter voltage (Base open) VCEO −140 V Emitter-base voltage (Collector open)
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2SB1490
2SD2250
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2SB1490
Abstract: 2SD2250
Text: Power Transistors 2SD2250 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1490 5.0±0.3 3.0 26.0±0.5 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open)
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2SD2250
2SB1490
2SB1490
2SD2250
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2SB1490
Abstract: 2SD2250
Text: SavantIC Semiconductor Product Specification 2SB1490 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SD2250 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplification
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2SB1490
2SD2250
-140V;
2SB1490
2SD2250
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2SB1490
Abstract: No abstract text available
Text: , One. J.E.IS.S.U TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SB1490 Silicon PNP Darlington Power Transistor DESCRIPTION • High DC Current Gain: hFE= 5000(Min)@lc= -6A • Low-Collector Saturation Voltage-
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2SB1490
2SD2250
-160V;
-140V;
2SB1490
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1490 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD2250 5.0±0.3 3.0 (10.0) (6.0) (2.0) (4.0) 20.0±0.5 (1.5) d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow
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2SB1490
2SD2250
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2SB1490
Abstract: 2SD2250
Text: Power Transistors 2SB1490 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD2250 2.0 (1.5) 2.7±0.3 3.0±0.3 1.0±0.2 0.6±0.2 • Absolute Maximum Ratings TC = 25°C 5.45±0.3 Parameter Symbol Rating Unit
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2SB1490
2SD2250
2SB1490
2SD2250
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2SB1490
Abstract: 2SD2250
Text: Power Transistors 2SD2250 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1490 Unit: mm Symbol Ratings Unit Collector to base voltage VCBO 160 V Collector to emitter voltage VCEO 140 V Emitter to base voltage
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2SD2250
2SB1490
2SB1490
2SD2250
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2SB1490
Abstract: 2SD2250
Text: Power Transistors 2SD2250 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1490 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 160 V Collector-emitter voltage (Base open)
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2SD2250
2SB1490
2SB1490
2SD2250
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2SB1490
Abstract: 2SD2250
Text: Power Transistors 2SB1490 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2250 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –160
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2SB1490
2SD2250
2SB1490
2SD2250
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PT10V
Abstract: 2SB1490 2SD2250
Text: Power Transistors 2SD2250 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1490 Unit: mm Symbol Ratings Unit Collector to base voltage VCBO 160 V Collector to emitter voltage VCEO 140 V Emitter to base voltage
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2SD2250
2SB1490
PT10V
2SB1490
2SD2250
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2SB1490
Abstract: 2SD2250
Text: Power Transistors 2SB1490 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD2250 5.0±0.3 3.0 (10.0) (6.0) (2.0) (4.0) 20.0±0.5 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current
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2SB1490
2SD2250
2SB1490
2SD2250
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD2250 Silicon NPN triple diffusion planar type darlington Unit: mm • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage Emitter open VCBO 160 V Collector-emitter voltage (Base open) VCEO 140 V Emitter-base voltage (Collector open)
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2SD2250
2SB1490
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TRANSISTOR DATASHEET D1555
Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440
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2N109
2N1304
2N1305
2N1307
2N1613
2N1711
2N1893
2N2102
2N2148
2N2165
TRANSISTOR DATASHEET D1555
d1555 transistor
TRANSISTOR D1651
D1555
D1557
D1554
d1651
transistor s1854
transistor d1555
transistor d1878
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2SB1496
Abstract: 2SB1466 2SB1516 2sb148 2SB1464 2SB1465 2SB1467 2SB1468 2SB1469 2SB1470
Text: - 92 - Ta=25t5. *EP(3Tc=25?C £ 2SB1464 2SBI465 2SB1466 2SB1467 2SB1468 2SB1469 2SB1470 2SB1471 2SB1472 2SB1473 ni-m ine ¿0014l 0 2SB1488 2SB1489 2SB1490 2SB1492 2SB1493 2SB1494 2SB1496 2SB1498 2SB1500 2SB1501 2SB1502 2SB1503 2SB1504 2SB1505 2SB1507 2SB1508
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2SB1464
2SB1465
-200u
2SB1466
2SB1467
2SB1468
2SB1469
2SD2275
2SB1502
2SD2276
2SB1496
2SB1516
2sb148
2SB1467
2SB1468
2SB1470
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2SB1531
Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140
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2SA1185
2SB1054/2SD1485
2SB1421
2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SD1457
2SD1457A
2SC4535
2SD1641
2SB1531
2SD2340 equivalent
2SB1255
2sb1492
2SD2328
2SA1185
2SB1421
2SC4535
2SD1457
2SD1457A
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2sb1355
Abstract: 2SB1493 2SB1516 2SA1842 2sb1261 2SB906 2SB1328 2SB1329 2SB1332 2SA1770
Text: - m € Type No. 2S5 1541 2SB 1542 2S8 1543 2SB 1544 2SB 1545 2SB 1546 2SB 1548 ^ 2SB 1549 2SB 1550 2SB 1551 2SB 1552 2SB 1553 2SB i554 2SB 1555 2S8 1556 2SB 1557 2SB 1558 2SB 1559 2SB 1561 2SB 1562 2SB 1563 2SB 1564 2SB 1565 2SB 1566 ^ 2SB 1567 2SB 1568 ^
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2SR562
2SB1329
2SA1706
2SB1433
2SB1517
2SA1707
2SA1708
2SB1459
2SB1332
2sb1355
2SB1493
2SB1516
2SA1842
2sb1261
2SB906
2SB1328
2SB1329
2SB1332
2SA1770
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Untitled
Abstract: No abstract text available
Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100
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2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SA1185
2SB1054/2SD1485
2SB1421
2SD1457
2SD1457A
2SB1252/2SD1892
2SB1502/2SD2275
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transistor a2160
Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Text: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124
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N12861
N13801
MN1381
N13811
N13821
N150402
15P0802
N150412
MN15151
MN152121
transistor a2160
transistor A1270
A1270 transistor
transistor 2sD 4515
1431T transistor
transistor A769
mini circuits 15542
A1270 Y
AN 5606K
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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2SD2340 equivalent
Abstract: D2254 2SB1493 2SD1485 2SB1531 2SD2328 2SA1185 2SD2052 equivalent 2SD1641 2SD1707
Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions General-use Vceo (V) lc VcE(sat) (A) (V) 50 7 100 140 80 LOW VcE(sat) D arlington High-hfE Packag e (No.) lc Ib <0.8 (A) 7 (mA) 700 5 <2 3
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2SA1185
2SB1054/2SD1485
2SB1421
2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SD1457
2SD1457A
2SC4535
2SD1641
2SD2340 equivalent
D2254
2SB1493
2SD1485
2SB1531
2SD2328
2SA1185
2SD2052 equivalent
2SD1641
2SD1707
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2SD2340 equivalent
Abstract: D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2sd1641 2SD2052 equivalent
Text: Transistors Selection Guide by Applications and Functions • Silicon Large-Power Transistors Application Functions VcEO (V) General-use 50 100 140 lc 80 LOW VcE(sat) 150 200 400 55 60 80/100 Darlington High-hra. (A) VcE(sat) (V) 7 5 7 10 15 20 6 6 20 4
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2SA1185
2SB1054/2SD1485
2SB1421
2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SD1457
2SD1457A
2SC4535
2SD1641
2SD2340 equivalent
D2250
2SD1485
d2554
2SD2340
audio Darlington 200 W
2SD2052 equivalent
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D1276A
Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463
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2SC4609
2SC4808
2SA1806
2SC4627
2SA1790
2SC4626
2SC4655
2SD2345
2SC46
12SA1
D1276A
B1419
d638 transistor
b1361
ic 1271a
D1273
D1985A
B947A
B1178
1985A
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