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    Panasonic Electronic Components 2SB11560P

    TRANS PNP 80V 20A TOP-3F
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    Panasonic Electronic Components 2SB1156

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    Quest Components 2SB1156 64
    • 1 $2.56
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    2SB1156 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1156 Panasonic Silicon PNP epitaxial planar type Original PDF
    2SB1156 Panasonic Silicon PNP epitaxial planar type Original PDF
    2SB1156 Panasonic Silicon PNP epitaxial planar type Original PDF
    2SB1156 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1156 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1156 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1156 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1156 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB11560P Panasonic TRANS PNP 80VCEO 20A TOP-3F Original PDF
    2SB1156Q Panasonic Silicon PNP Epitaxial Planar Type Power Transistor Original PDF
    2SB1156R Panasonic Silicon PNP Epitaxial Planar Type Power Transistor Original PDF

    2SB1156 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1156

    Abstract: 2SD1707
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1156 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max.)@ IC= -8A ·Complement to Type 2SD1707


    Original     		PDF 2SB1156 2SD1707 -100V; 2SB1156 2SD1707

    2SD1707

    Abstract: No abstract text available
    Text: Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1156 5.0±0.2 • Absolute Maximum Ratings TC = 25°C φ 3.2±0.1 15.0±0.2 • Low collector to emitter saturation voltage VCE sat • Satisfactory linearity of forward current transfer ratio hFE


    Original     		PDF 2SD1707 2SB1156 2SD1707

    2sd1707

    Abstract: 2SB1156
    Text: Inchange Semiconductor Product Specification 2SB1156 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1707 ・Low collector saturation voltage ・Large collector current APPLICATIONS ・For power switching applications


    Original     		PDF 2SB1156 2SD1707 2sd1707 2SB1156

    2SB1156

    Abstract: 2SD1707
    Text: Power Transistors 2SB1156 Silicon PNP epitaxial planar type Unit: mm For power switching Complementary to 2SD1707 Rating Unit Collector to base voltage VCBO −130 V Collector to emitter voltage VCEO −80 V Emitter to base voltage VEBO −7 V Peak collector current


    Original     		PDF 2SB1156 2SD1707 2SB1156 2SD1707

    2SB1156

    Abstract: 2SD1707
    Text: Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1156 5.0±0.2 • Features 3.2 11.0±0.2 φ 3.2±0.1 Rating Unit Collector-base voltage (Emitter open) VCBO 130 V Collector-emitter voltage (Base open)


    Original     		PDF 2SD1707 2SB1156 2SB1156 2SD1707

    2SD1707

    Abstract: 2SB1156
    Text: JMnic Product Specification 2SB1156 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1707 ・Low collector saturation voltage ・Large collector current APPLICATIONS ・For power switching applications PINNING


    Original     		PDF 2SB1156 2SD1707 2SD1707 2SB1156

    2sd1707

    Abstract: 2SB1156
    Text: Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1156 5.0±0.2 • Absolute Maximum Ratings TC = 25°C φ 3.2±0.1 15.0±0.2 • Low collector to emitter saturation voltage VCE sat • Satisfactory linearity of forward current transfer ratio hFE


    Original     		PDF 2SD1707 2SB1156 2sd1707 2SB1156

    2SB1156

    Abstract: 2SD1707
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1156 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1707 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 (3.2) 11.0±0.2 • Features


    Original     		PDF 2002/95/EC) 2SB1156 2SD1707 SC-92 2SB1156 2SD1707

    2SB1156

    Abstract: 2SD1707
    Text: Power Transistors 2SB1156 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1707 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130 V Collector-emitter voltage (Base open)


    Original     		PDF 2SB1156 2SD1707 SC-92 2SB1156 2SD1707

    Vbe 8 V

    Abstract: ic shelf life low Vce sat PNP transistor 200ma pnp 2SB1156 2SD1707
    Text: Power Transistors 2SB1156 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1707 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 • Features ■ Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		PDF 2SB1156 2SD1707 Vbe 8 V ic shelf life low Vce sat PNP transistor 200ma pnp 2SB1156 2SD1707

    PT10V

    Abstract: 2SB1156 2SD1707
    Text: Power Transistors 2SB1156 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1707 Unit: mm • Features ● ● ■ Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage


    Original     		PDF 2SB1156 2SD1707 PT10V 2SB1156 2SD1707

    2SB1156

    Abstract: 2SD1707
    Text: Power Transistors 2SB1156 Silicon PNP epitaxial planar type Unit: mm For power switching Complementary to 2SD1707 Rating Unit Collector to base voltage VCBO −130 V Collector to emitter voltage VCEO −80 V Emitter to base voltage VEBO −7 V Peak collector current


    Original     		PDF 2SB1156 2SD1707 2SB1156 2SD1707

    2SB1156

    Abstract: 2SD1707
    Text: Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1156 5.0±0.2 • Absolute Maximum Ratings TC = 25°C φ 3.2±0.1 15.0±0.2 • Low collector to emitter saturation voltage VCE sat • Satisfactory linearity of forward current transfer ratio hFE


    Original     		PDF 2SD1707 2SB1156 2SB1156 2SD1707

    2SB1156

    Abstract: 2SD1707
    Text: Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1156 5.0±0.2 • Absolute Maximum Ratings TC = 25°C 15.0±0.2 φ 3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 Parameter Symbol Rating Unit


    Original     		PDF 2SD1707 2SB1156 2SB1156 2SD1707

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1156 5.0±0.2 (0.7) 15.0±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		PDF 2002/95/EC) 2SD1707 2SB1156

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1156 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1707 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 (3.2) 11.0±0.2 • Features


    Original     		PDF 2002/95/EC) 2SB1156 2SD1707 SC-92

    2SB1156

    Abstract: 2SD1707
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1156 5.0±0.2 (0.7) 15.0±0.3 (3.2) Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)


    Original     		PDF 2002/95/EC) 2SD1707 2SB1156 SC-92 2SB1156 2SD1707

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    251C

    Abstract: 2SB1156 2SD1707
    Text: Power Transistors 2SB1156 2SB1156 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2S D 1707 U nit : ram 5 2 max. . 15.5max- • Features ' 6.9m in. "U.2 • Low collector-eim itter saturation voltage VcEisao • Good linearity of DC c u rre n t gain (hFE)


    OCR Scan     		PDF 2SB1156 2SD1707 -55-rent VCC--50V DGlb231 251C 2SB1156 2SD1707

    Untitled

    Abstract: No abstract text available
    Text: Power T ransistors 2SB1156 2SB1156 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD 1707 • Features • Low collector-eimitter saturation voltage VcEtsao • Good linearity of DC current gain (hFE) • High collector current (Ic)


    OCR Scan     		PDF 2SB1156 100x2mm

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1707 2SD1707 Silicon NPN Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SB1156 Unit ! mm 5.2max. 1 /3 .2 15.5max. • Features 6.9mm. o "I • Low c o lle c to r -e m itte r satu ratio n v o lta g e VcE<sat>


    OCR Scan     		PDF 2SD1707 2SB1156 bT32fl52

    ic 301

    Abstract: 2SD1707 2SB1156
    Text: Power Transistors 2SD1707 2S D 1707 Silicon NPN Epitaxial Planar Type Package D im ensions Power S w itching C om plem entary Pair w ith 2SB1156 • Features • L o w c o l l e c t o r - e m i t t e r s a tu ra tio n v o lta g e V c,E<Sat> • G o od lin e a rity of D C c u r r e n t g ain


    OCR Scan     		PDF 2SD1707 2SB1156 -55-T150 10Ubi= VCC-50V ic 301 2SD1707 2SB1156

    2SB1531

    Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140


    OCR Scan     		PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SB1531 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A