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    SOURIAU-SUNBANK 21A35102SA-1924

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    2SA192 Datasheets (33)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    2SA192 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA192 Unknown Cross Reference Datasheet Scan PDF
    2SA192 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA192 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SA192 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA192 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1920 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1920 ROHM ATR, ATV Transistors Scan PDF
    2SA1920 ROHM ATR / ATV Transistors Scan PDF
    2SA1921 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1922 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1923 Kexin Silicon PNP Transistor Original PDF
    2SA1923 Toshiba Silicon PNP Transistor Original PDF
    2SA1923 Toshiba PNP transistor Original PDF
    2SA1923 TY Semiconductor Silicon PNP Transistor - TO-252 Original PDF
    2SA1923 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1923 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1923 Toshiba Silicon PNP transistor for high voltage switching applications Scan PDF
    2SA1924 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-126(IS); Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor Original PDF
    2SA1924 Unknown Japanese Transistor Cross References (2S) Scan PDF

    2SA192 Datasheets Context Search

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    Type
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    PDF

    a1924 transistor

    Abstract: A1924 2SA1924
    Text: 2SA1924 TOSHIBA 2 S A 1 924 TO SHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SW ITCHING APPLICATIONS. • • High Voltage : V ç;e o = —400V Low Saturation Voltage : V qe sat = —IV (Max.) (IC = _ 100mA, IB = - 10mA) Collector Metal (Fin) is Fully Covered with Mold Resin


    OCR Scan     		2SA1924 --400V 100mA, a1924 transistor A1924 2SA1924 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1924 TO SH IB A 2S A 1924 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS. U n it in mm • High Voltage : V q e q = —400V • Low Saturation Voltage : V 3E (sat = —IV (Max.) (IC = _ 100mA, IB = - 10mA) • Collector Metal (Fin) is Fully Covered with Mold Resin


    OCR Scan     		2SA1924 100mA, PDF

    2SA1924

    Abstract: No abstract text available
    Text: 2SA1924 TO SH IBA 2SA 1924 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • • • High Voltage :V^ e q - -4 0 0 V Low Saturation Voltage : V qe sa^ = —1 V (Max.) (IC = -1 0 0 mA, IB = -1 0 mA) Collector Metal (Fin) is Fully Covered with Mold Resin


    OCR Scan     		2SA1924 2SA1924 PDF

    2SA1923

    Abstract: A1923
    Text: 2SA1923 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1923 High Voltage Switching Applications • High voltage: VCEO = −400 V · Low saturation voltage: VCE sat = −1 V (max) Unit: mm (IC = −100 mA, IB = −10 mA) Maximum Ratings (Ta = 25°C)


    Original     		2SA1923 2SA1923 A1923 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1925 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1925 High-Voltage Switching Applications • High breakdown voltage: VCEO = −400 V • Low saturation voltage: VCE sat = −1 V (max) Unit: mm (IC = −100 mA, IB = −10 mA) • Collector metal (fin) is fully covered with mold resin


    Original     		2SA1925 PDF

    2SA1920

    Abstract: saj 100
    Text: 2SA1920 Transistors 2SA1870 High-voltage switching Transistor Camera strobes and Telephone, Power supply I 2SA1920 • F e a tu re s 1) 2) 3) 4 ) • A b so lu te maximum ratings (Ta=25'C ) H igh breakdow n volts« . (V c eo — — 4 00 V ) Low VcE(saj). (Typ.— 0 .2 V at Ic/ie— — 20/— 2mA)'


    OCR Scan     		2SA1920 2SA1870 100ms ---100m 96-113-A325) 2SA1920 saj 100 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1923 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1923 High Voltage Switching Applications • High voltage: VCEO = −400 V • Low saturation voltage: VCE sat = −1 V (max) Unit: mm (IC = −100 mA, IB = −10 mA) Maximum Ratings (Ta = 25°C)


    Original     		2SA1923 PDF

    2SA1923

    Abstract: 2SA19
    Text: 2SA1923 TOSHIBA 2 S A 1 923 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • • High Voltage : V^ b q = —400 V Low Saturation Voltage : V qe sat — —1 V (Max.) (IC = -1 0 0 mA, IB = -1 0 mA) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		2SA1923 961001EAA1 2SA1923 2SA19 PDF

    a1924 transistor

    Abstract: 2SA1924 A1924 a1924 datasheet 024 marking code
    Text: 2SA1924 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1924 High-Voltage Switching Applications • High breakdown voltage: VCEO = −400 V • Low saturation voltage: VCE sat = −1 V (max) Unit: mm (IC = −100 mA, IB = −10 mA) • Collector metal (fin) is fully covered with mold resin.


    Original     		2SA1924 a1924 transistor 2SA1924 A1924 a1924 datasheet 024 marking code PDF

    2SA1925

    Abstract: A1925
    Text: 2SA1925 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1925 High-Voltage Switching Applications • High breakdown voltage: VCEO = −400 V • Low saturation voltage: VCE sat = −1 V (max) Unit: mm (IC = −100 mA, IB = −10 mA) • Collector metal (fin) is fully covered with mold resin


    Original     		2SA1925 2SA1925 A1925 PDF

    a1924 transistor

    Abstract: 2SA1924 A1924 2sa192
    Text: 2SA1924 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1924 High-Voltage Switching Applications • High breakdown voltage: VCEO = −400 V • Low saturation voltage: VCE sat = −1 V (max) Unit: mm (IC = −100 mA, IB = −10 mA) • Collector metal (fin) is fully covered with mold resin.


    Original     		2SA1924 a1924 transistor 2SA1924 A1924 2sa192 PDF

    2sC5200, 2SA1943, 2sc5198

    Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
    Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428


    OCR Scan     		2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1924 SILICON PNP TRIPLE DIFFUSED MESA TYPE U nit in mm HIGH VOLTAGE SWITCHING APPLICATIONS. • • • $ 3.1 Í0.1 H igh Voltage : V q e O = _ 400V Low Saturation Voltage : V p E Sa t = —IV (Max.) (Ip = —100mA, Ij}= —10mA) Collector M etal (Fin) is Fully Covered with Mold Resin


    OCR Scan     		2SA1924 --100mA, --10mA) --400V, --10mA, --20mA --10mA --50mA PDF

    2SA1926

    Abstract: No abstract text available
    Text: 2SA1926 SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER AM PLIFIER APPLICATIONS. POWER SW ITCHING APPLICATIONS. • Low Collector Saturation Voltage : VCE ( s a t ) = - 0 - 1 7 V (Max.) (IC = —1A) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		2SA1926 2SA1926 PDF

    a1926

    Abstract: 2-7D101A 2SA1926
    Text: 2SA1926 東芝トランジスタ シリコンPNPエピタキシャル形 2SA1926 単位: mm ○ 電力増幅用 ○ 電力スイッチング用 • コレクタ飽和電圧が低い。: VCE sat = −0.17 V (最大) (IC = −1 A) 絶対最大定格 (Ta = 25°C)


    Original     		2SA1926 2-7D101A A1926 2002/95/EC) a1926 2-7D101A 2SA1926 PDF

    2SA1925

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1925 2 S A 1 925 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • • • High Voltage : V^ e q - -4 0 0 V Low Saturation Voltage : V qe sa^ = —1 V (Max.) (IC = -1 0 0 mA, IB = -1 0 mA) Collector Metal (Fin) is Fully Covered with Mold Resin


    OCR Scan     		2SA1925 2SA1925 PDF

    2SA1923

    Abstract: No abstract text available
    Text: 2SA1923 TO SH IBA 2 S A 1 923 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS • • Unit in mm High Voltage : V ç j b o = -4 0 0 V Low Saturation Voltage : V qe sat — —1 V (Max.) ( I q = -1 0 0 mA, l g = -1 0 mA)


    OCR Scan     		2SA1923 2SA1923 PDF

    2SA1925

    Abstract: No abstract text available
    Text: T O S H IB A 2SA1925 2 S A 1 925 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • • • High Voltage : V^ e q - -4 0 0 V Low Saturation Voltage : V qe sa^ = —1 V (Max.) (IC = -1 0 0 mA, IB = -1 0 mA)


    OCR Scan     		2SA1925 2SA1925 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1925 TO SH IB A 2 S A 1 925 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS U n it in mm • High Voltage : V c e q = —400V • Low Saturation Voltage : V0E sat = —^ (Max.) (Iq = —100mA, Ijj = —10mA) • Collector Metal (Fin) is Fully Covered with Mold Resin


    OCR Scan     		2SA1925 100mA, PDF

    2SA1928

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1928 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION _ SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1928 is a silicon PNP epitaxial type transistor. It is designed for low noise differential amplify application.


    OCR Scan     		2SA1928 2SA1928 -100V 270Hz 270Hz PDF

    2SA1923

    Abstract: No abstract text available
    Text: 2SA1923 TO SH IBA 2 S A 1 923 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • • High Voltage : V ç j b o = -4 0 0 V Low Saturation Voltage : V qe sat — —1 V (Max.) ( I q = -1 0 0 mA, l g = -1 0 mA)


    OCR Scan     		2SA1923 2SA1923 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1925 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1925 High-Voltage Switching Applications • High breakdown voltage: VCEO = −400 V • Low saturation voltage: VCE sat = −1 V (max) Unit: mm (IC = −100 mA, IB = −10 mA) • Collector metal (fin) is fully covered with mold resin


    Original     		2SA1925 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1924 2SA1924 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED MESA TYPE HIGH VOLTAGE SWITCHING APPLICATIONS. • • U nit in mm 8.3 M A X , . S.8 . High Voltage : V c e q = -4 0 0 V Low Saturation Voltage : V Q E sat ~— (Max,) (Iq = — 100mA, 1b - —10mA)


    OCR Scan     		2SA1924 100mA, --10mA) PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1925 TOSHIBA 2 SA 1 9 2 5 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED MESA TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS 8.0 ±0.2 • High Voltage : VCE O = -400V Low Saturation Voltage : V ^ e $at ~ — (Max.) • Collector Metal (Fin) is Fully Covered with Mold Resin


    OCR Scan     		2SA1925 -400V -40ition ----400V, --10mA, --20mA --100mA 100mA» 100mAf -200V PDF