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    2SA1887 Price and Stock

    Toshiba America Electronic Components 2SA1887(F)

    TRANS PNP 50V 10A TO220NIS
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    Quest Components 2SA1887(F) 420
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    2SA1887 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1887 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SC5000 Original PDF
    2SA1887 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1887 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1887 Toshiba Silicon PNP transistor for high current switching applications Scan PDF
    2SA1887 Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Scan PDF
    2SA1887(F) Toshiba 2SA1887 - Bipolar Transistors PNP 50V 10A Transistor Original PDF

    2SA1887 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A1887

    Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1887
    Text: 2SA1887 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1887 High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) at IC = −5 A Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating


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    PDF 2SA1887 SC-67 2-10R1A A1887 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1887

    a1887

    Abstract: No abstract text available
    Text: 2SA1887 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1887 High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) at IC = −5 A Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol


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    PDF 2SA1887 SC-67 2-10R1A a1887

    A1887

    Abstract: 2SA1887
    Text: 2SA1887 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1887 High-Current Switching Applications • Low collector saturation voltage: Unit: mm VCE (sat) = −0.4 V (max) at IC = −5 A Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol


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    PDF 2SA1887 SC-67 2-10R1A A1887 2SA1887

    2SA1887

    Abstract: A1887
    Text: 2SA1887 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1887 High-Current Switching Applications • Low collector saturation voltage: Unit: mm VCE (sat) = −0.4 V (max) at IC = −5 A Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol


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    PDF 2SA1887 SC-67 2-10R1A 2SA1887 A1887

    2SA1887

    Abstract: No abstract text available
    Text: JMnic Product Specification 2SA1887 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Low collector saturation voltage APPLICATIONS ・High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings Ta=25℃


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    PDF 2SA1887 O-220F -10mA 2SA1887

    A1887

    Abstract: 2SA1887 A188
    Text: 2SA1887 東芝トランジスタ シリコンPNPエピタキシャル形 2SA1887 ○ 大電流スイッチング用 • 単位: mm コレクタ飽和電圧が低い。: VCE sat = −0.4 V (最大) (IC = −5 A) 絶対最大定格 (Ta = 25°C) 項 目 記


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    PDF 2SA1887 SC-67 2-10R1A A1887 2SA1887 A188

    Untitled

    Abstract: No abstract text available
    Text: 2SA1887 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1887 High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) at IC = −5 A Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating


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    PDF 2SA1887 SC-67 2-10R1A

    2SA1887

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SA1887 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Low collector saturation voltage APPLICATIONS ・High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter


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    PDF 2SA1887 O-220F 2SA1887

    2SA1887

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SA1887 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Low collector saturation voltage APPLICATIONS ·High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter


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    PDF 2SA1887 O-220F -10mA 2SA1887

    2N7058

    Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
    Text: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20


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    PDF VNL005A O-204AA/TO-3 VNM006A VNM005A 2N1717 2N1890 O-205AD/TO-39 2N7058 ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066

    XC9201D09AKR

    Abstract: CR105 U3FWJ44N XC9201 XC9201C33AKR XC9201C50AKR XP132A11A1SR
    Text: XC9201 Series ETR0502_004 PWM Controlled Step-Down DC/DC Controllers •GENERAL DESCRIPTION The XC9201 series are step-down multiple current and voltage feedback DC/DC controller ICs. Current sense, clock frequencies and amp feedback gain can all be externally regulated.


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    PDF XC9201 ETR0502 100mV XC9201D09AKR CR105 U3FWJ44N XC9201C33AKR XC9201C50AKR XP132A11A1SR

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


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    PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    ic 741 working as comparator

    Abstract: 741 adjustable current limiter XC9201D09AKR 3 pins trimmer capacitor operation of ic 741 ic 741 comparator ic 741 comparator signal generator 220uF 16V Electrolytic Capacitor DATASHEET OF IC 741 ELECTROLYTIC CAPACITORS 220uF 25V
    Text: ◆Input Voltage Range : 2.5V ~20V ◆Output Voltage Range : 1.2V ~ 16V ◆Oscillation Frequency Range : 100kHz ~ 600kHz ◆Output Current : Up To 3.0A ◆Ceramic Capacitor Compatible ◆MSOP-8A Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XC9201 series are step-up multiple current and voltage


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    PDF 100kHz 600kHz XC9201 100mV XC9201D09AKR XC9201 ic 741 working as comparator 741 adjustable current limiter XC9201D09AKR 3 pins trimmer capacitor operation of ic 741 ic 741 comparator ic 741 comparator signal generator 220uF 16V Electrolytic Capacitor DATASHEET OF IC 741 ELECTROLYTIC CAPACITORS 220uF 25V

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


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    PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1887 2 S A 1 887 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS 10 +0.3 Low Collector Saturation Voltage : Vc e (sat)~ —0.4V (Max.) at Ic = -5 A , $ 3.2 ± 0.2 2.7±02 1.1 MAXIMUM RATINGS (Ta = 25°C)


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    PDF 2SA1887

    02EA

    Abstract: 2SA1887
    Text: AOK Product Specification AOK Semiconductor Silicon PNP Power Transistors 2SA1887 DESCRIPTION • With T 0 2 2 0 F packagc • Low collector saturation voltage APPLICATIONS • High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector


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    PDF 2SA1887 T0220F CHARACTERISTICS-50 02EA

    2SA1887

    Abstract: No abstract text available
    Text: TO SHIBA 2SA1887 2 S A 1 887 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Collector Saturation Voltage : VCE (sat)= - ° - 4V (Max.) at Ie= -5 A r <v> 1.1 M A X IM U M RATINGS (Ta = 25°C)


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    PDF 2SA1887 2SA1887

    Untitled

    Abstract: No abstract text available
    Text: 2SA1887 T O SH IB A 2 S A 1 887 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • 1 0 Ì0 .3 Low Collector Saturation Voltage : VCE (sat)= -0 .4 V (Max.) at I c = -5 A ^ 3 .2 ± 0 .2 ^ 3 O 2 .7±0.2


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    PDF 2SA1887

    2SA1887

    Abstract: No abstract text available
    Text: 2SA1887 TO SH IBA 2 S A 1 887 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Collector Saturation Voltage : Vf!F, —0.4V (Max.) at If!= —5A 10 ±0.3 r o ^3.2 ± 0.2 MAXIMUM RATINGS (Ta = 25°C)


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    PDF 2SA1887 2SA1887

    2SA1887

    Abstract: No abstract text available
    Text: 2SA1887 TO SH IBA 2 S A 1 887 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Collector Saturation Voltage : Vf!F, —0.4V (Max.) at If!= —5A 10 ±0.3 r o ^3.2 ± 0.2 MAXIMUM RATINGS (Tc = 25°C)


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    PDF 2SA1887 2SA1887

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


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    PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    2sC5200, 2SA1943, 2sc5198

    Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
    Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428


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    PDF 2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266