a1869 transistor
Abstract: a1869 2SA1869
Text: 2SA1869 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1869 Power Amplifier Applications • Good linearity of hFE • Complementary to 2SC4935 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage
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2SA1869
2SC4935
SC-67
2-10R1A
a1869 transistor
a1869
2SA1869
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a1869
Abstract: a1869 transistor 2sa1869 transistor 2SA1869 2SC4935
Text: 2SA1869 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1869 Power Amplifier Applications • Good linearity of hFE • Complementary to 2SC4935 Unit: mm Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage
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2SA1869
2SC4935
SC-67
a1869
a1869 transistor
2sa1869 transistor
2SA1869
2SC4935
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a1869
Abstract: a1869 transistor 2SA1869 2SC4935
Text: 2SA1869 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1869 Power Amplifier Applications • Good linearity of hFE • Complementary to 2SC4935 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage
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2SA1869
2SC4935
SC-67
a1869
a1869 transistor
2SA1869
2SC4935
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2SA1869
Abstract: 2SC4935
Text: SavantIC Semiconductor Product Specification 2SA1869 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SC4935 APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings Ta=25
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2SA1869
O-220F
2SC4935
2SA1869
2SC4935
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2SA1869
Abstract: 2SC4935
Text: JMnic Product Specification 2SA1869 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SC4935 APPLICATIONS ・Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings Ta=25℃
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2SA1869
O-220F
2SC4935
2SA1869
2SC4935
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c4935
Abstract: 2SC4935 2SA1869 IC502
Text: 2SC4935 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4935 Power Amplifier Applications Unit: mm • Good hFE linearity • Complementary to 2SA1869 and 5-watt-output applications. Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol
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2SC4935
2SA1869
SC-67
c4935
2SC4935
IC502
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C4935
Abstract: C4935 Y 2SC4935
Text: 2SC4935 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4935 Power Amplifier Applications Unit: mm • Good hFE linearity • Complementary to 2SA1869 and 5-watt-output applications. Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol
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2SC4935
2SA1869
SC-67
2-10R1A
C4935
C4935 Y
2SC4935
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C4935
Abstract: 2SC4935 C4935 Y 2SA1869
Text: 2SC4935 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4935 Power Amplifier Applications Unit: mm • Good hFE linearity • Complementary to 2SA1869 and 5-watt-output applications. Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating
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2SC4935
2SA1869
SC-67
C4935
2SC4935
C4935 Y
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2SA1869
Abstract: 2sa186 2SC4935
Text: Inchange Semiconductor Product Specification 2SA1869 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SC4935 APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings Ta=25℃
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2SA1869
O-220F
2SC4935
2SA1869
2sa186
2SC4935
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cni-70
Abstract: 2sa1869 transistor 2SA1869 2SC4935
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1869 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4935 APPLICATIONS ·Designed for power amplifier applications.
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2SA1869
2SC4935
cni-70
2sa1869 transistor
2SA1869
2SC4935
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2SC4793 2sa1837
Abstract: 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor
Text: Part Number 2SA2058 Y 2SA1160 N 2SC2500 N 2SA1430 N 2SC3670 N 2SA1314 Y 2SC2982 Y 2SC5755 Y 2SA2066 Y 2SC5785 Y TPC6602 Y TPC6501 Y 2SA1802 Y 2SC4681 Y 2SC4682 N 2SC4683 N 2SC4781 N 2SC5713 Y TPC6D03 Y 2SA2065 Y 2SC5784 Y 2SA2069 Y 2SC5819 Y 2SA2061 Y 2SA2059 Y
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2SA2058
2SA1160
2SC2500
2SA1430
2SC3670
2SA1314
2SC2982
2SC5755
2SA2066
2SC5785
2SC4793 2sa1837
2sC5200, 2SA1943, 2sc5198
2sC5200, 2SA1943
transistor
2SA2060
power transistor npn to-220
2sc5198 equivalent
transistor 2SC5359
2SC5171 transistor equivalent
NPN Transistor
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2sc5088 horizontal transistors
Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.
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BCE0016A
3501C-0109
F-93561,
2sc5088 horizontal transistors
equivalent 2SC2655
2sc5858
2sC5200, 2SA1943
2sa1930 transistor equivalent
2SA1941 equivalent
2sc5570
zener diode SMD marking code 27 4F
2sc5200 audio amplifiers
smd transistor h2a
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2sC5200, 2SA1943
Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current
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BCE0016D
2sC5200, 2SA1943
2SA1941 equivalent
2SC5353 equivalent
2sc5198 equivalent
amplifier circuit using 2sa1943 and 2sc5200
2SC2383 equivalent
tpcp8l01
2SA1962 equivalent
2SC4793 2sa1837
2sA1013 equivalent
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2SA1869
Abstract: 2SC4935
Text: TO SH IBA 2SC4935 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4935 Unit in mm • Good Linearity of hp^. • Complementary to 2SA1869 and 5 Watts Output Applications. MAXIMUM RATINGS SYMBOL CHARACTERISTIC Collector-Base Voltage
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2SC4935
2SA1869
2SC4935
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2SA1869
Abstract: 2SC4935
Text: TOSHIBA 2SC4935 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4935 Unit in mm PO W ER AM PLIFIER APPLICATIONS • • Good Linearity of hpg. Complementary to 2SA1869 and 5 Watts Output Applications. M A X IM U M RATINGS SYMBOL CHARACTERISTIC
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2SC4935
2SA1869
SC-67
2-10R1A
961001EAA2'
2SC4935
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC4935 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4935 Unit in mm POWER AMPLIFIER APPLICATIONS • • 1 0 1 0.3 Good Linearity of hpg. Complementary to 2SA1869 and 5 Watts Output Applications. 4^ 2.710.2 ^ Oi ro O 1.1 MAXIMUM RATINGS
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2SC4935
2SA1869
961001EAA2'
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2SA1869
Abstract: 2SC4935
Text: TO SH IBA 2SC4935 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4935 Good Linearity of hp^. Complementary to 2SA1869 and 5 Watts Output Applications. Unit in mm 10 ±0.3 r ^3.2 ± 0.2 CO RATING 50 50 5
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2SC4935
2SA1869
SC-67
2-10R1A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4935 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 SC49 3 5 Unit in mm POWER AMPLIFIER APPLICATIONS • • 10 +0.3 Good Linearity of hpg. Complementary to 2SA1869 and 5 Watts Output Applications. r>ase uu rren i Ta = 25°C Collector Power
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2SC4935
2SA1869
961001EAA2'
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2SA1869
Abstract: 2SC4935
Text: TOSHIBA 2SA1869 2 S A 1 869 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm Good Linearity of hEE Complementary to 2SC4935 r <v> o 1.1 1.1 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
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2SA1869
2SC4935
SC-67
2-10R1A
2SA1869
2SC4935
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2SA1869
Abstract: 2SC4935
Text: TO SH IBA 2SA1869 2 S A 1 869 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 10 ± 0 .3 Good Linearity of hEE Complementary to 2SC4935 ^ 3 .2 ± 0.2 CO 1.1 SYMBOL VCBO VCEO Ve b o ic :B PC Tj Tstg
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2SA1869
2SC4935
SC-67
2SA1869
2SC4935
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Untitled
Abstract: No abstract text available
Text: 2SA1869 TOSHIBA 2 S A 1 869 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm Î.2 ± 0.2 10 ±0.3 Good Linearity of hpg Complementary to 2SC4935 2.710.2 m 1.1 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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2SA1869
2SC4935
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2SA1869
Abstract: 2SC4935
Text: 2SA1869 TO SH IBA 2 S A 1 869 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 10 ± 0 .3 Good Linearity of hEE Complementary to 2SC4935 ^ 3 .2 ± 0.2 CO 1.1 SYMBOL VCBO VCEO Ve b o ic :B pc Tj Tstg
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2SA1869
2SC4935
SC-67
2SA1869
2SC4935
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2SA1869
Abstract: 2SC4935
Text: 2SA1869 T O S H IB A 2 S A 1 869 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 1.2±0.2 10 ±0.3 Good Linearity of hjrg Complementary to 2SC4935 2.7±0.2 1.1 M A X IM U M RATINGS (Ta = 25°C)
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2SA1869
2SC4935
2SA1869
2SC4935
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2SA1869
Abstract: 2SC4935 T0-220F rfl5
Text: AOK Product Specification AOK Semiconductor Silicon PNP Power Transistors 2SA1869 DESCRIPTION • With T 0 2 2 0 F package • Complement to type 2SC4935 APPLICATIONS • Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter A b s o lu te m axim um ratings Ta=25*C
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2SA1869
T0-220F
2SC4935
rfl5
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