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    2SC4935 Price and Stock

    Toshiba America Electronic Components 2SC4935-Y,Q(J

    TRANS NPN 50V 3A TO220NIS
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    Toshiba America Electronic Components 2SC4935-O(Q,J)

    Bipolar Transistor (BJT)
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    Chip1Stop 2SC4935-O(Q,J) 400
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    2SC4935 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC4935 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SA1869 Original PDF
    2SC4935 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC4935 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC4935 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC4935 Toshiba SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR Scan PDF
    2SC4935 Toshiba Silicon NPN transistor for power amplifier applications Scan PDF
    2SC4935O Toshiba Silicon NPN Epitaxial Type Transistor Scan PDF
    2SC4935Y Toshiba Silicon NPN Epitaxial Type Transistor Scan PDF
    2SC4935-Y,Q(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 3A 50V TO220-3 Original PDF

    2SC4935 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1869

    Abstract: 2SC4935
    Text: JMnic Product Specification 2SA1869 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SC4935 APPLICATIONS ・Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings Ta=25℃


    Original     		PDF 2SA1869 O-220F 2SC4935 2SA1869 2SC4935

    a1869 transistor

    Abstract: a1869 2SA1869
    Text: 2SA1869 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1869 Power Amplifier Applications • Good linearity of hFE • Complementary to 2SC4935 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SA1869 2SC4935 SC-67 2-10R1A a1869 transistor a1869 2SA1869

    c4935

    Abstract: 2SC4935 2SA1869 IC502
    Text: 2SC4935 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4935 Power Amplifier Applications Unit: mm • Good hFE linearity • Complementary to 2SA1869 and 5-watt-output applications. Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol


    Original     		PDF 2SC4935 2SA1869 SC-67 c4935 2SC4935 IC502

    C4935

    Abstract: C4935 Y 2SC4935
    Text: 2SC4935 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4935 Power Amplifier Applications Unit: mm • Good hFE linearity • Complementary to 2SA1869 and 5-watt-output applications. Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol


    Original     		PDF 2SC4935 2SA1869 SC-67 2-10R1A C4935 C4935 Y 2SC4935

    2SA1869

    Abstract: 2SC4935
    Text: SavantIC Semiconductor Product Specification 2SA1869 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SC4935 APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings Ta=25


    Original     		PDF 2SA1869 O-220F 2SC4935 2SA1869 2SC4935

    2SC4935

    Abstract: No abstract text available
    Text: 2SC4935 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4935 Power Amplifier Applications • Unit: mm Good hFE linearity Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage


    Original     		PDF 2SC4935 SC-67 2-10R1A 2SC4935

    a1869

    Abstract: a1869 transistor 2SA1869 2SC4935
    Text: 2SA1869 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1869 Power Amplifier Applications • Good linearity of hFE • Complementary to 2SC4935 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SA1869 2SC4935 SC-67 a1869 a1869 transistor 2SA1869 2SC4935

    a1869

    Abstract: a1869 transistor 2sa1869 transistor 2SA1869 2SC4935
    Text: 2SA1869 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1869 Power Amplifier Applications • Good linearity of hFE • Complementary to 2SC4935 Unit: mm Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SA1869 2SC4935 SC-67 a1869 a1869 transistor 2sa1869 transistor 2SA1869 2SC4935

    cni-70

    Abstract: 2sa1869 transistor 2SA1869 2SC4935
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1869 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4935 APPLICATIONS ·Designed for power amplifier applications.


    Original     		PDF 2SA1869 2SC4935 cni-70 2sa1869 transistor 2SA1869 2SC4935

    C4935

    Abstract: 2SC4935 C4935 Y 2SA1869
    Text: 2SC4935 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4935 Power Amplifier Applications Unit: mm • Good hFE linearity • Complementary to 2SA1869 and 5-watt-output applications. Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating


    Original     		PDF 2SC4935 2SA1869 SC-67 C4935 2SC4935 C4935 Y

    2SA1869

    Abstract: 2sa186 2SC4935
    Text: Inchange Semiconductor Product Specification 2SA1869 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SC4935 APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings Ta=25℃


    Original     		PDF 2SA1869 O-220F 2SC4935 2SA1869 2sa186 2SC4935

    Untitled

    Abstract: No abstract text available
    Text: 2SA1869 SILICO N P N P EPITAXIAL T Y P E P C T P R O C E S S U nit in mm PO W ER AM PLIFIER APPLICATIONS. 10 + 0.3 • • . ¿3 .; to .; 2 .7 * 0 2 Good Linearity of hpEComplementary to 2SC4935. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SA1869 2SC4935. SC-67 2-10R1A --10mA,

    2SA1869

    Abstract: 2SC4935
    Text: TOSHIBA 2SC4935 T O S H IB A TRA N SISTO R SILICON NPN EPIT A X IA L TY PE PCT PROCESS 2SC493 5 Unit in mm P O W E R A M P L IF IE R A PPLIC A TIO N S • • 10 ±0.3 Good Linearity of kpg. Complementary to 2SA1869 and 5 Watts Output Applications. ^3.2 ± 0.2


    OCR Scan     		PDF 2SC4935 2SA1869 SC-67 961001EAA2' 2SC4935

    2SA1869

    Abstract: 2SC4935
    Text: TOSHIBA 2SA1869 2 S A 1 869 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm Good Linearity of hEE Complementary to 2SC4935 r <v> o 1.1 1.1 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SA1869 2SC4935 SC-67 2-10R1A 2SA1869 2SC4935

    2SA1869

    Abstract: 2SC4935
    Text: 2SA1869 T O S H IB A 2 S A 1 869 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 1.2±0.2 10 ±0.3 Good Linearity of hjrg Complementary to 2SC4935 2.7±0.2 1.1 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SA1869 2SC4935 2SA1869 2SC4935

    Untitled

    Abstract: No abstract text available
    Text: 2SA1869 TOSHIBA 2 S A 1 869 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm Î.2 ± 0.2 10 ±0.3 Good Linearity of hpg Complementary to 2SC4935 2.710.2 m 1.1 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SA1869 2SC4935

    Untitled

    Abstract: No abstract text available
    Text: 2SC4935 SILICON NPN TRIPLE DIFFUSED MESA TYPE PO W ER AM PLIFIER APPLICATIONS. U n it in mm 10 + 0 3 • • ¿ 3.2 ± 0.2 2.7 + 0.2 Good Linearity of hjrjr;. Complementary to 2SA1869 and 5 W atts Output Applications. M A X IM U M RATINGS SYMBOL CHARACTERISTIC


    OCR Scan     		PDF 2SC4935 2SA1869 SC-67 2-10R1A

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SA1869 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS )<; a i ftfiQ Unit in mm POWER AMPLIFIER APPLICATIONS 10 + 0.3 Good L inearity of 03.2 + 0.2 -n > -=r 2.7±Q.2 Complementary to 2SC4935 1.1 M A X IM U M R A T I N A lT x = '>S,°n


    OCR Scan     		PDF 2SA1869 2SC4935

    2SA1869

    Abstract: 2SC4935 T0-220F rfl5
    Text: AOK Product Specification AOK Semiconductor Silicon PNP Power Transistors 2SA1869 DESCRIPTION • With T 0 2 2 0 F package • Complement to type 2SC4935 APPLICATIONS • Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter A b s o lu te m axim um ratings Ta=25*C


    OCR Scan     		PDF 2SA1869 T0-220F 2SC4935 rfl5

    2SA1869

    Abstract: 2SC4935
    Text: TOSHIBA 2SC4935 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4935 Unit in mm PO W ER AM PLIFIER APPLICATIONS • • Good Linearity of hpg. Complementary to 2SA1869 and 5 Watts Output Applications. M A X IM U M RATINGS SYMBOL CHARACTERISTIC


    OCR Scan     		PDF 2SC4935 2SA1869 SC-67 2-10R1A 961001EAA2' 2SC4935

    2SA1869

    Abstract: 2SC4935
    Text: TO SH IBA 2SC4935 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4935 Good Linearity of hp^. Complementary to 2SA1869 and 5 Watts Output Applications. Unit in mm 10 ±0.3 r ^3.2 ± 0.2 CO RATING 50 50 5


    OCR Scan     		PDF 2SC4935 2SA1869 SC-67 2-10R1A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4935 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 SC49 3 5 Unit in mm POWER AMPLIFIER APPLICATIONS • • 10 +0.3 Good Linearity of hpg. Complementary to 2SA1869 and 5 Watts Output Applications. r>ase uu rren i Ta = 25°C Collector Power


    OCR Scan     		PDF 2SC4935 2SA1869 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC4935 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4935 Unit in mm POWER AMPLIFIER APPLICATIONS • • 1 0 1 0.3 Good Linearity of hpg. Complementary to 2SA1869 and 5 Watts Output Applications. 4^ 2.710.2 ^ Oi ro O 1.1 MAXIMUM RATINGS


    OCR Scan     		PDF 2SC4935 2SA1869 961001EAA2'

    2SA1869

    Abstract: 2SC4935
    Text: 2SA1869 TO SH IBA 2 S A 1 869 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 10 ± 0 .3 Good Linearity of hEE Complementary to 2SC4935 ^ 3 .2 ± 0.2 CO 1.1 SYMBOL VCBO VCEO Ve b o ic :B pc Tj Tstg


    OCR Scan     		PDF 2SA1869 2SC4935 SC-67 2SA1869 2SC4935