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Toshiba America Electronic Components 2SA1362-GR,LF TRANS PNP 15V 0.8A SMINI
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SA1362-GR,LF	Cut Tape	4,306		1	1 $0.34 10 $0.206 100 $0.1292 1000 $0.08493 10000 $0.08493	Buy Now
	2SA1362-GR,LF	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.045	Buy Now
	2SA1362-GR,LF	Digi-Reel			1	1 $0.34 10 $0.206 100 $0.1292 1000 $0.08493 10000 $0.08493	Buy Now
Avnet Americas	2SA1362-GR,LF	Reel		20 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.05364	Buy Now
Mouser Electronics	2SA1362-GR,LF		5,900			1 $0.38 10 $0.265 100 $0.11 1000 $0.082 10000 $0.045	Buy Now
TTI	2SA1362-GR,LF	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.045	Buy Now
Toshiba America Electronic Components 2SA1362-GR,LF(T Transistor, Pnp, 15V, 0.8A, Sot-346 Rohs Compliant: Yes \|Toshiba 2SA1362-GR, LF(T
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	2SA1362-GR,LF(T	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.063	Buy Now
	2SA1362-GR,LF(T	Cut Tape			5	1 $0.422 10 $0.324 100 $0.154 1000 $0.103 10000 $0.103	Buy Now
Chip1Stop	2SA1362-GR,LF(T	Cut Tape	5,031			1 - 10 - 100 $0.0737 1000 $0.0537 10000 $0.0475	Buy Now
EBV Elektronik	2SA1362-GR,LF(T		30,000	27 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	2SA1362-GR,LF(T		24,000		1	1 - 10 - 100 - 1000 - 10000 $0.0855	Buy Now
Toshiba America Electronic Components 2SA1362-Y,LF(B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SA1362-Y,LF(B		2,260			1 $0.75 10 $0.75 100 $0.75 1000 $0.225 10000 $0.15	Buy Now
Toshiba America Electronic Components 2SA1362-Y(TE85R)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SA1362-Y(TE85R)		425			1 $0.7 10 $0.7 100 $0.42 1000 $0.35 10000 $0.35	Buy Now
Toshiba America Electronic Components 2SA1362GR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR Small Signal Bipolar Transistor, 0.8A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	2SA1362GR		2,842			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Find more 2SA1362 price and stock on Findchips.com

2SA1362 Datasheets (24)

Part	Manufacturer	Description	Type	PDF
2SA1362	Continental Device India	Low Frequency Power Amplifier Transistor	Original	PDF
2SA1362	Kexin	PNP Silicon Epitaxial Transistor	Original	PDF
2SA1362	Toshiba	General Purpose Transistors (Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Comments: High current; DC Current Gain hFE, min: (min 120) (max 400); DC Current Gain hFE, max: (max -0.2); Collector-Emitter Saturation Voltage V_CE(sat), max (V): (max -15)	Original	PDF
2SA1362	TY Semiconductor	PNP Silicon Epitaxial Transistor - SOT-23	Original	PDF
2SA1362	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SA1362	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SA1362	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SA1362	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SA1362	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SA1362	Toshiba	PNP transistor	Scan	PDF
2SA1362	Toshiba	TRANSISTOR (LOW FREQUENCY POWER AMPLIFIER, SWITCHING APPLICATIONS)	Scan	PDF
2SA1362	Toshiba	Super Mini Package (TO-236 / SOT-23) Transistors	Scan	PDF
2SA1362-GR	Toshiba	2SA1362 - TRANSISTOR 800 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal	Original	PDF
2SA1362GR	Toshiba	Silicon PNP Epitaxial Planar Transistor	Scan	PDF

2SA1362-GR,LF	Toshiba America Electronic Components	PNP TRANSISTOR VCEO-15V IC-0.8A	Original	PDF
2SA1362-GR(T5L,F,T	Toshiba	2SA1362 - TRANSISTOR PNP 15V 800MA 2-3F1A	Original	PDF
2SA1362GRTE85L	Toshiba	2SA1362 - TRANSISTOR 800 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal	Original	PDF
2SA1362GRTE85R	Toshiba	2SA1362 - TRANSISTOR 800 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal	Original	PDF
2SA1362TE85L	Toshiba	2SA1362 - TRANSISTOR 800 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal	Original	PDF
2SA1362TE85R	Toshiba	2SA1362 - TRANSISTOR 800 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal	Original	PDF

2SA1362 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 2SA1362 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V) I(C) Max. (A)800m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).2 @I(C) (A) (Test Condition)400m	Original	PDF	2SA1362 Freq120M
2SA1362 Abstract: No abstract text available Text: 2SA1362 シリコンPNPエピタキシャル形 PCT方式東芝トランジスタ 2SA1362 ○ 低周波電力増幅用 ○ 電力スイッチング用単位: mm • 直流電流増幅率が高い。: hFE (1) = 120~400 • コレクタ･エミッタ間飽和電圧が低い。	Original	PDF	2SA1362 O-236MOD SC-59 2SA1362
Untitled Abstract: No abstract text available Text: 2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1362 Low Frequency Power Amplifier Applications Power Switching Applications • High DC current gain: hFE = 120 to 400 • Low saturation voltage: VCE (sat) = −0.2 V (max) (IC = −400 mA, IB = −8 mA)	Original	PDF	2SA1362
Untitled Abstract: No abstract text available Text: Product specification 2SA1362 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Small package. 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 High DC Current Gain Low Saturation Voltage Suitable for Driver Stage of Small Motor 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1	Original	PDF	OT-23
2SA1362 Abstract: SMD iC MARKING AE AE MARKING Text: Transistors IC SMD Type Silicon PNP Epitaxia 2SA1362 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 Small package. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Suitable for driver stage of small motor. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1	Original	PDF	2SA1362 OT-23 2SA1362 SMD iC MARKING AE AE MARKING
2SA1362 Abstract: No abstract text available Text: 2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1362 Low Frequency Power Amplifier Applications Power Switching Applications • High DC current gain: hFE = 120~400 · Low saturation voltage: VCE (sat) = −0.2 V (max) · Suitable for driver stage of small motor	Original	PDF	2SA1362 2SA1362
2SA1362 Abstract: No abstract text available Text: 2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1362 Low Frequency Power Amplifier Applications Power Switching Applications • High DC current gain: hFE = 120~400 • Low saturation voltage: VCE (sat) = −0.2 V (max) • Suitable for driver stage of small motor	Original	PDF	2SA1362 SC-59 2SA1362
Untitled Abstract: No abstract text available Text: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SA1362 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Small package. 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 High DC Current Gain Low Saturation Voltage Suitable for Driver Stage of Small Motor 2	Original	PDF	OT-23
2SA1362 Abstract: No abstract text available Text: 2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1362 Low Frequency Power Amplifier Applications Power Switching Applications • High DC current gain: hFE = 120~400 • Low saturation voltage: VCE (sat) = −0.2 V (max) • Suitable for driver stage of small motor	Original	PDF	2SA1362 O-236MOD SC-59 2SA1362
2SA1362 Abstract: No abstract text available Text: 2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1362 Low Frequency Power Amplifier Applications Power Switching Applications • High DC current gain: hFE = 120~400 • Low saturation voltage: VCE (sat) = −0.2 V (max) • Suitable for driver stage of small motor	Original	PDF	2SA1362 2SA1362
S-8324 Abstract: S-8324A27MC-EOH-T2 S-8324A30MC-EOK-T2 S-8324A33MC-EON-T2 S-8324A50MC-EPE-T2 S-8328 Text: Contents Features . 1 Applications . 1 Block Diagram . 1 Selection Guide . 2	Original	PDF	S-8328B50 S-8328B30 S-8324 S-8324A27MC-EOH-T2 S-8324A30MC-EOK-T2 S-8324A33MC-EON-T2 S-8324A50MC-EPE-T2 S-8328
lm2804 Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.	Original	PDF	BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
2SA1362 Abstract: SSOP24 TA2002F TA2002FN Text: TA2002F / FN TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA2002F,TA2002FN Stereo Headphone Amplifier 3V USE The TA2002F, TA2002FN are developed for play−back stereo headphone equipments (3V use). They are built in dual auto−reverse preamplifier, dual OCL	Original	PDF	TA2002F TA2002FN TA2002F, TA2002FN 2SA1362 SSOP24
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	PDF	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

Untitled Abstract: No abstract text available Text: 2SA1362 T O SH IB A 2 S A 1 362 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LOW FREQUENCY POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • + 0 .5 2 . 5 - 0 .3 High DC Current Gain : hpE —120~400 Low Saturation Voltage	OCR Scan	PDF	2SA1362 400mA,
2SA1362 Abstract: A1362 Text: TOSHIBA 2SA1362 2 S A 1 362 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS LO W FREQUENCY POWER AMPLIFIER APPLICATIONS. POWER SW ITCHING APPLICATIONS. • • High DC Current Gain : hpE = 120~400 Low Saturation Voltage : V ce (sat) = -0.2V (Max.) (Ic = -400mA, IB = -8mA)	OCR Scan	PDF	2SA1362 -400mA, 961001EAA2' 2SA1362 A1362
2SA1362 Abstract: A1362 Text: 2SA1362 TO SH IBA 2 S A 1 362 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LOW FREQUENCY POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • • + 0.5 2.5 —0.3 High DC Current Gain : hpE —120—400 Low Saturation Voltage	OCR Scan	PDF	2SA1362 -400m 2SA1362 A1362
Untitled Abstract: No abstract text available Text: TOSHIBA 2SA1362 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 13 6 2 LOW FREQUENCY POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. U n it in mm + CL5 3 .5 - 0 .3 : + 0.85 • H igh D C C u rren t G ain h ^ E —120—400 •	OCR Scan	PDF	2SA1362 -400m 961001EAA2'
Untitled Abstract: No abstract text available Text: 2SA1362 LOW FREQUENCY POWER AMPLIFIER TRANSISTOR P -N -P transistor Marking 2SA1362 = AE PACKAGE O U TLIN E DETAILS ALL D IM EN SIO N S IN mm 3.0 ~2.B ~ Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2« . 2.4 I TJ 3 J 1’.0 2 J Cl.89 0.60 0.40 ABSOLUTE MAXIMUM RATINGS	OCR Scan	PDF	2SA1362 23fl33T4
2SA1362 Abstract: No abstract text available Text: 2SA1362 LOW FREQUENCY POWER AMPLIFIER TRANSISTOR P -N -P transistor M ark in g 2SA1362 = AE P A C K A G E O U T L IN E D ETA ILS A LL D IM E N S IO N S IN m m 3.0 ~2.B Pin configuration 2.6 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.4 X I tJ 3 1.02J 0.89 2 .00_	OCR Scan	PDF	2SA1362 23fl33T4 2SA1362
2SC3340 Abstract: 2SA1324 2SC3339 2SC3426 Text: —3 10. SUPER MINI PACKAGE SERIES TO-236 MOD./SOT-23 MOD. C/i 1 H CD 3» rS M H n > TRANSISTOR << •c PC (V) (mA) (mW) 50 150 150 70 -700/400 6 V CE (V) >C (mA) (V) •c (mA) >B (mA) (MHz) 0.25/0.3 100 10 (80) NPN l General Purpose 2SC2712 ! High Voltage	OCR Scan	PDF	O-236 /SOT-23 2SA1162 15NEW) 2SC2532 2SC2714 2SC2715 2SC2716 2SC2996 2SC3340 2SA1324 2SC3339 2SC3426
2N3904 331 transistor Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737 Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 2SC1815(L) — 2SC2995 — * 2N3904 — 2SA1245 167 2SC1923 — 2SC2996 266 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272	OCR Scan	PDF	2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
high voltage pnp transistor 700v Abstract: 743V pnp transistor 800v Text: Section 3.4 POWER MANAGEMENT 1C • Description The S-8470AFS is a CMOS power management 1C for portable telephones. It contains a watch dog timer circuit, in addition to four series-type voltage regulators and four voltage detectors. Features • Four built-in high-precision voltage regulators with	OCR Scan	PDF	S-8470AFS high voltage pnp transistor 700v 743V pnp transistor 800v
Untitled Abstract: No abstract text available Text: T O SH IB A TENTATIVE TA8302F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA 8302F MOTOR DRIVER FOR CAMERA TA8302F is Multi Chip 1C incorporates 6 low saturation discrete transistors which equipped bias resistor and FreeWheeling diode. This 1C is suitable for a camera use motor drive	OCR Scan	PDF	TA8302F 8302F TA8302F SSOP16 600mA RN5006 300mA 2SA1362 2SC2982

2SA1362 Search Results

2SA1362 Price and Stock

Toshiba America Electronic Components 2SA1362-GR,LF

Toshiba America Electronic Components 2SA1362-GR,LF(T

Toshiba America Electronic Components 2SA1362-Y,LF(B

Toshiba America Electronic Components 2SA1362-Y(TE85R)

Toshiba America Electronic Components 2SA1362GR

2SA1362 Datasheets (24)

2SA1362 Datasheets Context Search

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2SA1362

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2SA1362

2SA1362

2SA1362

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2SA1362

2SA1362

S-8324

lm2804

2SA1362

sn76131

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2SA1362

2SA1362

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2SA1362

2SC3340

2N3904 331 transistor

high voltage pnp transistor 700v

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