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    2SC2715 Search Results

    2SC2715 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC2715 Galaxy Semi-Conductor Holdings Silicon Epitaxial Planar Transistor Original PDF
    2SC2715 Kexin Silicon NPN Epitaxial Original PDF
    2SC2715 Shenzhen Yongerjia Electronic NPN Epitaxial Silicon Transistor Original PDF
    2SC2715 Unknown Scan PDF
    2SC2715 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2715 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SC2715 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2715 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC2715 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2715 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC2715 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2715 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC2715 Toshiba Super Mini Package (TO-236 / SOT-23) Transistors Scan PDF
    2SC2715 Toshiba Silicon NPN transistor for high frequency amplifier applications. Recommended for FM IF, OSC stage and AM conv. IF stage Scan PDF
    2SC2715M Jiangsu Changjiang Electronics Technology TRANSISTOR Original PDF
    2SC2715-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2715O Toshiba Silicon NPN Epitaxial Planar Type Transistor Scan PDF
    2SC2715-O Toshiba TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE(PCT PROCESS) Scan PDF
    2SC2715-R Unknown Scan PDF
    2SC2715-R Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2SC2715 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N2458

    Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386


    Original     		PDF 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2N479 2N479A 2N2458 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2715 TRANSISTOR NPN 1. BASE FEATURES 2. EMITTER 3. COLLECTOR z z High Power Gain: Gpe=2dB(Typ.)(f=10.7MHz) Recommended for FM IF,OSC Stage and AM CONV. IF Stage.


    Original     		PDF OT-23 OT-23 2SC2715

    oscilator

    Abstract: 2SC2715
    Text: 2SC2715 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 AM/FM IF AMPLIFIER,LOCAL OSCILATOR 1 OF FM/VHF TUNER High Current Gain Bandwidth 2 Product f T =600MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm ABSOLUTE MAXIMUM RATINGS o Ta=25 C


    Original     		PDF 2SC2715 OT-23 600MHz 300uS 2SC2715 oscilator

    2SC2715

    Abstract: No abstract text available
    Text: ST 2SC2715 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications for FM IF, OSC stage and AM CONV. IF stage The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g


    Original     		PDF 2SC2715 2SC2715

    bfw34 diode

    Abstract: 2SC562 BSX70 LOW-POWER SILICON NPN BFR36 NA31 L/bfw34 diode 2SC941 bfw34
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386


    Original     		PDF 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2N479 2N479A bfw34 diode LOW-POWER SILICON NPN BFR36 NA31 L/bfw34 diode 2SC941 bfw34

    2SC2715

    Abstract: No abstract text available
    Text: ST 2SC2715 NPN Silicon Epitaxial Planar Transistor for FM RADIO, MIX, CONV, OSC and IF amplifier . The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. TO-92 Plastic Package Weight approx.0.19g Absolute Maximum Ratings Ta = 25oC


    Original     		PDF 2SC2715 2SC2715

    2SC2715

    Abstract: 2SC2715-Y 2SC2715-O 2SC2715-R
    Text: 2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type PCT process 2SC2715 High Frequency Amplifier Applications Unit: mm • High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz) · Recommended for FM IF, OSC stage and AM CONV. IF stage. Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC2715 2SC2715 2SC2715-Y 2SC2715-O 2SC2715-R

    2SC2715

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC2715 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Recommended for FM IF, OSC stage and AM CONV. IF stage. 1 0.55 High power gain: Gpe = 2dB typ. (f = 10.7 MHz). +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1


    Original     		PDF 2SC2715 OT-23 2SC2715

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B 2SC2715M TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial planar Silicon Transistor B C 1. BASE FEATURES High power gain: Gpe=27dB(f=10.7MHz)


    Original     		PDF WBFBP-03B WBFBP-03B 2SC2715M 2SC2715M

    marking AM sot-23

    Abstract: 2SC2715
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2715 TRANSISTOR NPN 1. BASE FEATURES 2. EMITTER 3. COLLECTOR z z High Power Gain Recommended for FM IF,OSC Stage and AM CONV. IF Stage. MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 2SC2715 marking AM sot-23 2SC2715

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2715 TRANSISTOR NPN 1. BASE FEATURES 2. EMITTER 3. COLLECTOR z z High Power Gain Recommended for FM IF,OSC Stage and AM CONV. IF Stage. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 2SC2715

    marking NF

    Abstract: 2SC2715-O
    Text: 2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type PCT process 2SC2715 High Frequency Amplifier Applications Unit: mm • High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) • Recommended for FM IF, OSC stage and AM CONV. IF stage. Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC2715 SC-59 marking NF 2SC2715-O

    2SC2715

    Abstract: No abstract text available
    Text: ST 2SC2715 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications for FM IF, OSC stage and AM CONV. IF stage The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g


    Original     		PDF 2SC2715 2SC2715

    2SC2715

    Abstract: No abstract text available
    Text: ST 2SC2715 NPN Silicon Epitaxial Planar Transistor for FM RADIO, MIX, CONV, OSC and IF amplifier . The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. TO-92 Plastic Package Weight approx.0.19g Absolute Maximum Ratings Ta = 25oC


    Original     		PDF 2SC2715 2SC2715

    2SC2715M

    Abstract: 30MHZ
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B 2SC2715M TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial planar Silicon Transistor B C 1. BASE FEATURES High power gain: Gpe=27dB(f=10.7MHz)


    Original     		PDF WBFBP-03B WBFBP-03B 2SC2715M 2SC2715M 30MHZ

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B 2SC2715M TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial planar Silicon Transistor B C 1. BASE FEATURES High power gain: Gpe=27dB(f=10.7MHz)


    Original     		PDF WBFBP-03B WBFBP-03B 2SC2715M 2SC2715M

    marking NF

    Abstract: No abstract text available
    Text: 2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type PCT process 2SC2715 High Frequency Amplifier Applications Unit: mm • High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) • Recommended for FM IF, OSC stage and AM CONV. IF stage. Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC2715 SC-59 marking NF

    2SC2715

    Abstract: TRANSISTOR MARKING FA
    Text: 2SC2715 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2715 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS • • + 0.5 2.5-0.3 + 0.25 High Power Gain : Gpe = 2dB (Typ.) (f=10.7MHz) Recommended for FM IF, OSC Stage and AM CONV. IF Stage.


    OCR Scan     		PDF 2SC2715 SC-59 2SC2715 TRANSISTOR MARKING FA

    2SC2715

    Abstract: No abstract text available
    Text: 2SC2715 SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR U nit in HIGH FREQUENCY AMPLIFIER APPLICATIONS. FEATURES : High Power Gain : Gpe = 2dB Typ. (f= 10.7MHz) • Recommended for FM IF, OSC Stage and AM CONV. IF Stage. CE­ C IM A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC2715 SC-59 2SC2715

    2SA1152

    Abstract: 2SC2719 2SC2770 2SC2724 2SA1154 2SC2110 2SC2132 2SC2727 2SC2159 2SC2718
    Text: - 132 - M X Ë f à Ta=25‘C, *£P(ÍTc=25‘C } m % & 2SC2712 2SC2713 2SC2714 2SC2715 2SC2716 2SC2717 2SC2718 2SC2719 2SC2720 2SC2721 2SC2724 2SC2727 2SC2731 2SC2732 2SC2733 2SC2734 2SC2735 2SC2736 2SC2738 2SC2739 2SC2740 2SC2749 2SC2750 2SC2751 2SC2752


    OCR Scan     		PDF 2SC2712 2SC2713 2SC2714 2SC2715 2SC2716 2SC2717 MP-80) 2SC2751 2SA1156 O-126) 2SA1152 2SC2719 2SC2770 2SC2724 2SA1154 2SC2110 2SC2132 2SC2727 2SC2159 2SC2718

    2SC2715

    Abstract: No abstract text available
    Text: 2SC2715 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2715 HIGH FREQUENCY AMPLIFIER APPLICATIONS. + 0.5 2 .5 - I1 3 + 0 .2 5 1 .5 - Q .l 5 FEATURES : • High Power Gain : Gpe = 2dB (Typ.) (f = 10.7MHz) • Recommended for FM IF, OSC Stage and AM CONV. IF Stage.


    OCR Scan     		PDF 2SC2715 SC-59 2SC2715

    SV153A

    Abstract: Sv153 varicap diode 2SC491 1SV226 Am tuning varicap 1SS242 1SV211 4007F S1B66
    Text: 3. BLOCK DIAGRAM OF RECOMMENDED PRODUCTS 3.1 RF DISCRETE DEVICES FOR AM TUNER Bi'Transistor PIN Diode Single TO-92 SM 1 SV 9 9 Double use SM Q SM TO-92 USM 1SV128 1SV271 1SV172 1S V 2 3 7 1SV252 MINI SM 2 SC 3 8 0 T M 2 SC 26 6 9 2SC2715 2 SC 94 1 T M 2SC2670


    OCR Scan     		PDF 2SC2670 2SC2715 2SC2716 1SV128 1SV271 1SV172 1SV252 1SV102 SV149 2V02H SV153A Sv153 varicap diode 2SC491 1SV226 Am tuning varicap 1SS242 1SV211 4007F S1B66

    2SC2715

    Abstract: No abstract text available
    Text: 2SC2715 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2715 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS • • High Power Gain : Gpe = 2dB (Typ.) (f=10.7MHz) Recommended for FM IF, OSC Stage and AM CONV. IF Stage. + 0.5


    OCR Scan     		PDF 2SC2715 2SC2715

    KZL 140 C

    Abstract: 2SC2715
    Text: 2SC2715 SILICON NPN EPITAXIAL PLANAR TYPE U nit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS. + Oil Û255 1.5— FEATURES: High Power Gain : Gpe = 2dB Typ. (f = 10.7MHz) • Recommended for FM IF, OSC Stage and AM CONV. IF Stage. dd +1 HO EE- -e dci +1 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC2715 KZL 140 C 2SC2715