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    2SA1255 Price and Stock

    Toshiba America Electronic Components 2SA1255Y(TE85L,F)

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    Quest Components 2SA1255Y(TE85L,F) 1,670
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    2SA1255 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SA1255 Kexin High Voltage Switching Applications Original PDF
    2SA1255 TY Semiconductor High Voltage Switching Applications - SOT-23 Original PDF
    2SA1255 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1255 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1255 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1255 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1255 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1255 Toshiba SILICON PNP TRIPLE DIFFUSED (PCT PROCESS) TRANSISTOR Scan PDF
    2SA1255 Toshiba TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS) Scan PDF
    2SA1255 Toshiba PNP transistor Scan PDF
    2SA1255 Toshiba Super Mini Package (TO-236 / SOT-23) Transistors Scan PDF
    2SA1255-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1255O Toshiba Silicon PNP Triple Diffused Transistor Scan PDF
    2SA1255-Y Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1255Y Toshiba Silicon PNP Triple Diffused Transistor Scan PDF

    2SA1255 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1255

    Abstract: No abstract text available
    Text: Transistors SMD Type Silicon PNP Triple Diffused Type 2SA1255 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High voltage. 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1


    Original     		PDF 2SA1255 OT-23 2SA1255

    5as SMD Transistor

    Abstract: No abstract text available
    Text: Transistor IC Transistor Transistors DIP SMDType Type SMD Type Product specification 2SA1255 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High voltage. 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter


    Original     		PDF 2SA1255 OT-23 5as SMD Transistor

    Untitled

    Abstract: No abstract text available
    Text: 2SA1255 TOSHIBA Transistor Silicon PNP Triple Diffused PCT process 2SA1255 High Voltage Switching Applications • High voltage: VCBO = −200 V (min) • Small package • Complementary to 2SC3138 Unit: mm VCEO = −200 V (min) Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SA1255 2SC3138 O-236MOD

    2SA1255

    Abstract: 2SC3138
    Text: 2SA1255 TOSHIBA Transistor Silicon PNP Triple Diffused PCT process 2SA1255 High Voltage Switching Applications • High voltage: VCBO = −200 V (min) · Small package · Complementary to 2SC3138 Unit: mm VCEO = −200 V (min) Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SA1255 2SC3138 O-236MOD SC-59 2SA1255 2SC3138

    2SA1255

    Abstract: 2SC3138
    Text: 2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3138 High Voltage Switching Applications • High voltage: VCBO = 200 V (max) · Small flat package · Complementary to 2SA1255 Unit: mm VCEO = 200 V (max) Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC3138 2SA1255 O-236MOD SC-59 2SA1255 2SC3138

    50N240

    Abstract: JE9093C LOW-POWER SILICON PNP HSE194
    Text: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 200 200 200 200 200 200 200 200 200 200 FMMTA93 BSSn BSSn MPSA93 ESM693 2SA1330 2SA133005 2SA1255 2SA1376AL 200 200 200 200 200 200 200 200 200 85 90 95 772 30 30 30 30 30 30 30


    Original     		PDF MPS-A93 BF693 MPSA930 2N6432 PH5415 PN5415 2SB718 BSS74S 50N240 JE9093C LOW-POWER SILICON PNP HSE194

    2SA1255

    Abstract: 2SC3138
    Text: 2SA1255 TOSHIBA Transistor Silicon PNP Triple Diffused PCT process 2SA1255 High Voltage Switching Applications • High voltage: VCBO = −200 V (min) • Small package • Complementary to 2SC3138 Unit: mm VCEO = −200 V (min) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SA1255 2SC3138 O-236MOD SC-59 2SA1255 2SC3138

    2SA1255

    Abstract: 2SC3138
    Text: 2SA1255 TOSHIBA Transistor Silicon PNP Triple Diffused PCT process 2SA1255 High Voltage Switching Applications • High voltage: VCBO = −200 V (min) • Small package • Complementary to 2SC3138 Unit: mm VCEO = −200 V (min) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SA1255 2SC3138 O-236MOD SC-59 2SA1255 2SC3138

    Untitled

    Abstract: No abstract text available
    Text: 2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3138 High Voltage Amplifier Applications High Voltage Switching Applications • Unit: mm High voltage: VCBO = 200 V (max) VCEO = 200 V (max) • Small flat package • Complementary to 2SA1255


    Original     		PDF 2SC3138 2SA1255 SC-59

    2SC31384

    Abstract: No abstract text available
    Text: 2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3138 High Voltage Switching Applications • High voltage: VCBO = 200 V (max) • Small flat package • Complementary to 2SA1255 Unit: mm VCEO = 200 V (max) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC3138 2SA1255 O-236MOD SC-59 2SC31384

    2SA1255

    Abstract: 2SC3138
    Text: 2SA1255 東芝トランジスタ シリコンPNP三重拡散形 PCT方式 2SA1255 ○ 高電圧スイッチング ○ 高電圧増幅用 単位: mm • 小型パッケージで小型機器の設計に適しています。 • 高耐圧です。 : VCBO = −200 V (最小)


    Original     		PDF 2SA1255 2SC3138 O-236MOD SC-59 2SA1255 2SC3138

    2SA1255

    Abstract: 2SC3138
    Text: 2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3138 High Voltage Switching Applications • High voltage: VCBO = 200 V (max) • Small flat package • Complementary to 2SA1255 Unit: mm VCEO = 200 V (max) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC3138 2SA1255 O-236MOD SC-59 2SA1255 2SC3138

    Untitled

    Abstract: No abstract text available
    Text: 2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3138 High Voltage Amplifier Applications High Voltage Switching Applications • Unit: mm High voltage: VCBO = 200 V (max) VCEO = 200 V (max) • Small flat package • Complementary to 2SA1255


    Original     		PDF 2SC3138 2SA1255 SC-59

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1255 2 S A 1 255 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED PCT PROCESS Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • + 0.5 2.5-0.3 High Voltage : V c b o = —200V (Min.) VCEO= —200V (Min.) Small Package Complementary to 2SC3138 •


    OCR Scan     		PDF 2SA1255 2SC3138

    2SA1255

    Abstract: 2SC3138
    Text: 2SC3138 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S C 3 1 38 HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm + 0.5 • High Voltage : V c b q —^OOV (Min.) V C E O = 200V (Min.) • Small Flat Package • Complementary to 2SA1255


    OCR Scan     		PDF 2SC3138 2SA1255 O-236MOD SC-59 961001EAA1 2SA1255 2SC3138

    MARKING CL3

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DFFUSED TYPE 2SC3138 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS. + CL5 2.5-CL3 FEATURES: + 12 S 1.5 -ai 5 . High Voltage : VQgQ=200V ä 'l •M . Small Flat Package . Complementary to 2SA1255 ¥ CHARACTERISTIC SYMBOL Collector-Base Voltage


    OCR Scan     		PDF 2SC3138 2SA1255 MARKING CL3

    2SA1255

    Abstract: 2SC3138 A1255
    Text: 2SA1255 TO SH IBA 2 S A 1 255 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED PCT PROCESS Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • • • + 0.5 2 .5 -0 .3 + 0.25 High Voltage : VCBO~ —200V (Min.) V c EO= - 200V (Min.) Small Package Complementary to 2SC3138


    OCR Scan     		PDF 2SA1255 --200V 2SC3138 O-236 SC-59 2SA1255 2SC3138 A1255

    2SA1255

    Abstract: B205
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SA1255 Unit in nun HIGH VOLTAGE SWITCHING APPLICATIONS. -fCL5 2.5-0.3 FEATURES: . High Voltage : Vp£Q=200V . Small Flat Package . Complementary to 2SC3138 MAXIMUM RATINGS Ta=25°C SYMBOL RATING Collector-Base Voltage VCBO


    OCR Scan     		PDF 2SA1255 2SC3138 -10mA, 2SA1255 B205

    2SA1255

    Abstract: 2SC3138
    Text: T O S H IB A 2SC3138 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S C 3 1 38 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS + 0.5 2.5-0.3 High Voltage • • VCBO = 200 V (Max.) Vf!F,n = 200 V (Max.) Small Flat Package Complementary to 2SA1255


    OCR Scan     		PDF 2SC3138 2SA1255 O-236MOD SC-59 2SC3138

    2SA1255

    Abstract: 2SC3138
    Text: 2SA1255 TOSHIBA 2 S A 1 255 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED PCT PROCESS Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS + 0.5 • High Voltage : VCBO“ —200V (Min.) VCEO= -2 0 0 V (Min.) Small Package Complementary to 2SC3138 • • M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SA1255 --200V 2SC3138 O-236 SC-59 2SA1255 2SC3138

    2SA1255

    Abstract: No abstract text available
    Text: 2SA1255 TOSHIBA 2 S A 12 5 5 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED PCT PROCESS Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • + 0.5 2 . 5 - 0.3 + 0.25 . 1 . 5 - 0.15 High Voltage : V q b q ——200V (Min.) V C EO =-200V (Min.) Small Package


    OCR Scan     		PDF 2SA1255 ----200V -200V 2SC3138 O-236 SC-59 2SA1255

    2SC3340

    Abstract: 2SA1324 2SC3339 2SC3426
    Text: —3 10. SUPER MINI PACKAGE SERIES TO-236 MOD./SOT-23 MOD. C/i 1 H CD 3» rS M H n > TRANSISTOR << •c PC (V) (mA) (mW) 50 150 150 70 -700/400 6 V CE (V) >C (mA) (V) •c (mA) >B (mA) (MHz) 0.25/0.3 100 10 (80) NPN l General Purpose 2SC2712 ! High Voltage


    OCR Scan     		PDF O-236 /SOT-23 2SA1162 15NEW) 2SC2532 2SC2714 2SC2715 2SC2716 2SC2996 2SC3340 2SA1324 2SC3339 2SC3426