2SA116
Abstract: No abstract text available
Text: 2SA1160 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)
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2SA1160
2SA116
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A1680
Abstract: 2SA1680 2SC4408
Text: 2SA1680 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1680 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。: VCE (sat) = −0.5 V (最大) (IC = −1 A)
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2SA1680
2SC4408
O-92MOD
20070701-JA
A1680
2SA1680
2SC4408
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C5122
Abstract: 2SC5122
Text: 2SC5122 東芝トランジスタ シリコンNPN三重拡散形 2SC5122 ○ 高電圧スイッチング用 単位: mm • 高耐圧です。 • 飽和電圧が低い。 : VCE sat = 0.4 V (標準) (IC = 20 mA, IB = 0.5 mA) : VCEO = 400 V 絶対最大定格 (Ta = 25°C)
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2SC5122
O-92MOD
20070701-JA
C5122
2SC5122
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c2705
Abstract: c2705 transistor 2sc2705 2SA1145 C2705 data
Text: 2SC2705 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2705 Audio Frequency Amplifier Applications Unit: mm • Small collector output capacitance: Cob = 1.8 pF (typ.) • High transition frequency: fT = 200 MHz (typ.) • Complementary to 2SA1145.
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2SC2705
2SA1145.
c2705
c2705 transistor
2sc2705
2SA1145
C2705 data
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A1761
Abstract: 2SA1761 2SC4604
Text: 2SA1761 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1761 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −0.5 A) • High-speed switching: tstg = 0.2 s (typ.)
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2SA1761
2SC4604.
A1761
2SA1761
2SC4604
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c2236 transistor
Abstract: transistor C2236 C2236 NPN Transistor C2236 c2236 transistor equivalent C2236 Y 2SC2236 2SA966
Text: 2SC2236 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2236 Audio Power Amplifier Applications • Unit: mm Complementary to 2SA966 and 3-watt output applications. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage
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2SC2236
2SA966
O-92MOD
c2236 transistor
transistor C2236
C2236 NPN Transistor
C2236
c2236 transistor equivalent
C2236 Y
2SC2236
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C2703
Abstract: 2SC2703
Text: 2SC2703 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2703 ○ 低周波電力増幅用 • 単位: mm 直流電流増幅率が高い。: hFE = 100~320 絶対最大定格 (Ta = 25°C) 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧
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2SC2703
O-92MOD
20070701-JA
C2703
2SC2703
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b1457
Abstract: B1457 transistor 2SB1457
Text: 2SB1457 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington 2SB1457 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max)
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2SB1457
b1457
B1457 transistor
2SB1457
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c2230a
Abstract: C2230 2SC2230 2SC2230 GR 2SC2230A
Text: 2SC2230,2SC2230A 東芝トランジスタ シリコンNPN三重拡散形 PCT方式 2SC2230,2SC2230A ○ 高耐圧一般増幅用 ○ カラーテレビ B 級音声出力用 • 単位: mm 高耐圧です。: VCEO = 180 V (2SC2230A) 絶対最大定格 (Ta = 25°C)
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2SC2230
2SC2230A
2SC2230A)
2SC2230
O-92MOD
c2230a
C2230
2SC2230 GR
2SC2230A
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transistor c4408
Abstract: c4408 c4408 transistor 2SA1680 2SC4408
Text: 2SC4408 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4408 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW
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2SC4408
2SA1680
transistor c4408
c4408
c4408 transistor
2SA1680
2SC4408
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Toshiba transistor C2235
Abstract: c2235 transistor C2235 Transistor C2235 2SA965 2SC2235
Text: 2SC2235 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2235 Audio Power Amplifier Applications Driver Stage Amplifier Applications • Unit: mm Complementary to 2SA965. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit
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2SC2235
2SA965.
O-92MOD
Toshiba transistor C2235
c2235 transistor
C2235
Transistor C2235
2SA965
2SC2235
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2SC2235
Abstract: C2235 2SA965 c2235 Y
Text: 2SC2235 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2235 ○ 電力増幅用 ○ 励振段増幅用 • 単位: mm 2SA965 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C) 項 目 記 号 定
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2SC2235
2SA965
O-92MOD
20070701-JA
2SC2235
C2235
2SA965
c2235 Y
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d2536
Abstract: 2SD2536
Text: 2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.2 V (max)
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2SD2536
d2536
2SD2536
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2SA1145
Abstract: A1145 Y 2SC2705 A1145
Text: 2SA1145 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1145 ○ オーディオアンプ励振段増幅用 単位: mm • 高耐圧です。 • ハイファイアンプの励振段に適します。 • コレクタ出力容量が小さい。
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2SA1145
2SC2705
O-92MOD
20070701-JA
2SA1145
A1145 Y
2SC2705
A1145
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A966
Abstract: a966 y 2SA966 A966 PNP A-966 2SC2236 2SA966 Y
Text: 2SA966 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA966 ○ 低周波電力増幅用 • 単位: mm 2SC2236 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C) 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧
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2SA966
2SC2236
O-92MOD
20070701-JA
A966
a966 y
2SA966
A966 PNP
A-966
2SC2236
2SA966 Y
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2SC4682
Abstract: No abstract text available
Text: 2SC4682 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4682 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 800 to 3200 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 500 (typ.) (VCE = 1 V, IC = 3 A)
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2SC4682
2SC4682
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2SA1145
Abstract: No abstract text available
Text: 2SA1145 SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY AMPLIFIER APPLICATIONS. • • • Complementary to 2SC2705. Small Collector Output Capacitance : C0b = 2.5pF (Typ.) High Transition Frequency : f'r = 200MHz (Typ.) M A X IM U M RATING S (Ta = 25°C)
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2SA1145
2SC2705.
200MHz
O-92MOD
--10mA
--10mA,
--10mA
2SA1145
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2sa965
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA965 U nit in mm POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • Complementary to 2SC2235. = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
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2SA965
2SC2235.
--10mA,
--500mA,
-500m
100mA
2sa965
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2SC1627A
Abstract: No abstract text available
Text: 2SC1627A SILICON NPN EPITAXIAL TYPE PCT PROCESS U nit in mm DRIVER STAGE AM PLIFIER APPLICATIONS. VOLTAGE AM PLIFIER APPLICATIONS. • • Complementary to 2SA817A. Driver Stage Application of 30 to 35 W atts Amplifiers. M A X IM U M R ATING S (Ta = 25°C)
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2SC1627A
2SA817A.
O-92MOD
2SC1627A
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2SA949
Abstract: No abstract text available
Text: TOSHIBA 2SA949 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2SA949 Unit in mm DRIVER STAGE AUDIO AM PLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. • • • 5 1 MAX. High Breakdown Voltage : V£Eo = —150V Low Output Capacitance : Cob = 5.0pF Max.
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2SA949
120MHz
51MAX.
O-92MOD
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A1972
Abstract: 2SA1972
Text: 2SA1972 T O S H IB A 2 S A 1 972 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS 5.1 M AX. • High Voltage : V ç;e = —400V 9 M A X IM U M RATINGS Ta = 25°C SYMBOL v CBO VCEO Ve b o ic ÏCP :B PC Tj
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2SA1972
--400V
75MAX.
A1972
2SA1972
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Untitled
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE 2SA1761 U nit in mm POWER AMPLIFIER APPLICATIONS. POW ER SW ITCHING APPLICATIONS. • • • Low Collector-Emitter Saturation Voltage : v CE sat = - 0.5V (Max.) (Ic = - 1.5A) High Speed Switching Time : tstg = 0.2(u s (Typ.) Complementary to 2SC4604.
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2SA1761
2SC4604.
O-92MOD
100mA
--75mA
--10V,
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2SC2703
Abstract: No abstract text available
Text: 2SC2703 SILICON NPN EPITAXIAL TYPE PCT PROCESS A U D IO POW ER AMPLIFIER APPLICATIONS. • U n it in m m H ig h DC C u rre n t G ain : h p E = 1 00~ 320 M A X IM U M RATINGS (T a = 2 5 °C ) C H A RA CTERISTIC SYM BOL RATING U N IT C ollector-B ase V oltage
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2SC2703
O-92M
2SC2703
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Untitled
Abstract: No abstract text available
Text: 2 S A 1811 SILICON PNP EPITAXIAL TYPE Unit in mm LO W FREQ U EN CY AM PLIFIER APPLICATIO N S. DRIVER STA G E A M PLIFIER A PPLICA TIO N S. 5.1 MAX SW ITCHING A PPLICA TIO N S. • • Excellent hpE Linearity : hFE 2 = 35 (M in.), (V c e =:-2 V , I c = —300mA)
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2SA1811
--300mA)
2SC4707
O-92MOD
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