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    ELEM STATE ELECTRONICS 2N651A

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    2N651A Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N651A Central Semiconductor Germanium PNP Transistor 45 Volts, 200mW Original PDF
    2N651A Central Semiconductor Leaded Devices Scan PDF
    2N651A Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N651A Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N651A Unknown Vintage Transistor Datasheets Scan PDF
    2N651A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N651A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N651A Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N651A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N651A Semitron Alloy Junction Germanium Transistor Scan PDF
    2N651A Semitronics Alloy-junction Germanium Transistors Scan PDF

    2N651A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    bjt specifications

    Abstract: No abstract text available
    Text: 2N651A Ge PNP Lo-Pwr BJT 9.00 Transistors Bipolar Germanium PNP Low-Power Tra. Page 1 of 2 Enter Your Part # Home Part Number: 2N651A Online Store 2N651A Diodes Ge PNP Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


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    2N651A 2N651A com/2n651a bjt specifications PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N651A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30ã V(BR)CBO (V)45 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.45 h(FE) Max. Current gain.


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    2N651A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N651A+JAN Transistors Ge PNP Lo-Pwr BJT Military/High-RelY V BR CEO (V)30ã V(BR)CBO (V)45 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.45 h(FE) Max. Current gain.


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    2N651A PDF

    Low-Power Germanium PNP

    Abstract: 2N1377 2n1375 TR526 2N524A 2N3428 2n525a diode GG 64 2N1432 AC123
    Text: LOW-POWER GERMANIUM PNP Item Number Part Number 10 15 20 >= 2G524 2Nl057 2N1371 2N1375 ACY16 TRS50 TR650 TR650 2N1997 2N597 2N2382 2N524A TR43A TR43A TR43A 2G525 2G525 2G525 CK658 CKS5C 30 CK65 CK65A 2N1451 TR43 TR43 TR43 2N1447 2N526 ~~:~~ 35 40 TR461 2N237


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    2G524 2Nl057 2N1371 2N1375 ACY16 TRS50 TR650 2N1997 2N597 Low-Power Germanium PNP 2N1377 TR526 2N524A 2N3428 2n525a diode GG 64 2N1432 AC123 PDF

    Untitled

    Abstract: No abstract text available
    Text: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s


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    2N651A PDF

    2N651

    Abstract: germanium af transistors germanium audio 2N652 2N652A t05 case Germanium power 2N651A GERMANIUM PNP LOW POWER TRANSISTORS germanium
    Text: 2N651 2N651A 2N652 2N652A t e n tra i se m ico n d u cto r Corp. C e n tra l S e m ico n d u cto r C orp. GERMANIUM PNP TRANSISTOR kS VOLTS, 200 mW JEDEC T0-5 CASE 145 Adams Avenue Hauppauge, New York 11 788 DESCRIPTION The CENTRAL SEMICONDUCTOR 2N651,A 2N652.A Series are Germanium Alloy PNP Milliwatt


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    2N651 2N651A 2N652 2N652A 100mA, 000tt 1000i2, germanium af transistors germanium audio 2N652A t05 case Germanium power GERMANIUM PNP LOW POWER TRANSISTORS germanium PDF

    2N650A

    Abstract: 2N651A 2N652A
    Text: MIL-S-19500/175C AMENDMENT 1 9 March 1973 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPES 2N650A, 2N651A, AND 2N652A This amendment form s a p a rt of M ilitary Specification MIL-S-19500/175C, dated 10 October 1968, and is approved for use by all Departments and


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    MIL-S-19500/175C 2N650A, 2N651A, 2N652A MIL-S-19500/175C, 5961-0419OR 2N650A 2N651A 2N652A PDF

    2N651A

    Abstract: 2N650A WE VQE 23 F 175C 2N652A 2n85
    Text: M IL -S -19300/175C 10 October 1958 SUPERSEDING M IL -S -19500/175B 2 July 1384 See 6.3 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PN P, GERMANIUM, L O w -PO w EK TYPES 2N650A, 2N651A, AND 2N652A Thi» specification is m andatory fo r u se b y a ll D ep art­


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    MIL-S-19500/ MIL-S-19500/175B 2N650A, 2N651A, 2N652A 2N651A 2N650A WE VQE 23 F 175C 2N652A 2n85 PDF

    2N19A

    Abstract: 2N1310 2n1408 2N1305 2N1100 2N404 transistor 2N1008 npn germanium 2N1378 2N1924
    Text: T - Z 7 - O I discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 alloy-junction germanium transistors ' T t i n t h i a i : Polarity v 2843A Maximum Power <W Maximum V) VCB VCE Typical G lin HFE Frequency Reip. (MHz) Gau P o h iity Î v t V f * 5" ^


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    2K43A 2N44A 2Nto37 2N18M 2N109? 2N169 2N3427 2N662 2N1008 2N1008B 2N19A 2N1310 2n1408 2N1305 2N1100 2N404 transistor npn germanium 2N1378 2N1924 PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 PDF

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    2N65s

    Abstract: 2n907 2N936 2N797 2N706 2N906 2N777 2N945 2N964 2N555
    Text: DIGITRÔN ELECTRONIC CORP 3bE D • 2ñ4St.D7 OOGOOGS 7 ■ • qj DGE'-p Page t,6Î - DIQITRON ELECTRONIC« #2 CORE 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax J O H N J. S C H W A R T Z


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    204EbD7 2N497AI 2N539 2N696A 2N728 2N871 2N922 2N498 2N539A 2N697 2N65s 2n907 2N936 2N797 2N706 2N906 2N777 2N945 2N964 2N555 PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 PDF

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    MOTOROLA POWER TRANSISTOR

    Abstract: TO36 package 2N554 Motorola germanium transistor pnp 2N174 2N1545 motorola mesa transistors 1N2621A 2N398A 2N1358 JAN
    Text: m a r c h RESTRICTED WPS Document Ccx OtC _ "* "1 A R EP O R T ON MOTOROLA SE M IC O N D U C T O R R E L IA B IL IT Y D u rin g the past y ear great strides have been m a d e in M o to ro la 's Q uality A ssu ran ce P ro g ram to provide assurance o f reliability . . . as well as a reliable product.


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    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


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    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


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    MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    2m137

    Abstract: 2N1310 2n1908 2N404 transistor 2N130S 2N526 2N1190 2N32 2N160 2N241A
    Text: IN TEX/ SEMITRONICS CORP E 7E D • 4fibei a 4fa GGOQETe T -Z 7 -O I 1 discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 alloy-junction germanium transistors ; Trinsittdt: Polarity ■mm.-: im* i Maximum Miximum V Typical Giln HFE Power (W) VCB


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    ci24t N1086 J2N1087 2N169 S50I6Ã 2m137 2N1310 2n1908 2N404 transistor 2N130S 2N526 2N1190 2N32 2N160 2N241A PDF